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OP27A, OP27C LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIERS D
OP27A, OP27C LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIERS D

... Supply voltage, VCC + (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Supply voltage, VCC − (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... 3. Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40mA independent of the magnitude of V+. At values of supply voltage in excess of +15V, continuous short-circuits can e ...
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... Third-order distortion increases much more rapidly than described by relation (6) (see Figure 3). Above this power, the AC-modulation of the carrier concentration leads to a depletion of the intrinsic zone in the negative halfcycle and thus to an even stronger non-linear i-v-characteristic. In this ...
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... load affect the power factor so the power system losses its efficiency. There are certain organization developing products in this field to improve and compensate power factor. In the present trends the design are also moving forwards the miniature architecture, this can be achieved in a product by ...
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... The controller circuit also senses the average input current as well as the peak input current. With this, maximum input power can be controlled as well as the maximum peak current to achieve a safe and stable operation under all possible conditions. To finally protect the device from overheating, a ...
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... constant current. Therefore, the output voltage falls when load impedance decreases. NOTE if a current limit occurs and the resulting output voltage is low, excessive power is dissipated across the LDO, resulting in possible damage to the device. 7.3.5 Reverse Current The TPS715 PMOS-pass transistor ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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