/s Flash ADC frontend in SiGe A 4 bit 10 GS
... NTEGRATED circuits realized in SiGe-bipolar technologies have a reputation for operating at very high speed (e.g. 100 Gbit/s [1]) but being very power consuming whereas circuits in the latest CMOS technologies are expected to operate at only somewhat lower speed (e.g. 60 Gbit/s [2]) but to consume s ...
... NTEGRATED circuits realized in SiGe-bipolar technologies have a reputation for operating at very high speed (e.g. 100 Gbit/s [1]) but being very power consuming whereas circuits in the latest CMOS technologies are expected to operate at only somewhat lower speed (e.g. 60 Gbit/s [2]) but to consume s ...
Control Algorithms for Voltage Regulated Distribution Transformers
... PSA is similar to line drop compensation, which has been available for primary substation transformers for long time and is described in many publications such as [6]. However, rules for PSA configuration are not available and are therefore part of this study. Remote sensor control (RSC) RSC also is ...
... PSA is similar to line drop compensation, which has been available for primary substation transformers for long time and is described in many publications such as [6]. However, rules for PSA configuration are not available and are therefore part of this study. Remote sensor control (RSC) RSC also is ...
chapter 6
... a.c. supply. The rectifier valve must have a peak inverse rating of at least 2Vmax. To limit the charging current, an additional resistance R is provided in series with the secondary of the transformer (not shown in the figure). A full wave rectifier circuit is shown in Fig. 6.1b. In the positive ha ...
... a.c. supply. The rectifier valve must have a peak inverse rating of at least 2Vmax. To limit the charging current, an additional resistance R is provided in series with the secondary of the transformer (not shown in the figure). A full wave rectifier circuit is shown in Fig. 6.1b. In the positive ha ...
Self Oscillating Circuit for CFL10W and CFL18W Lamps APPLICATION NOTE AN99065
... In the underlying report a description is given of an electronic instant-start CFL1 circuit. Furthermore, a printed circuit board is available (PR39742). The circuit is a Voltage Fed Half Bridge, which has been optimized to drive a standard Philips PL-C10W and PLC18W lamp or similar lamp types. The ...
... In the underlying report a description is given of an electronic instant-start CFL1 circuit. Furthermore, a printed circuit board is available (PR39742). The circuit is a Voltage Fed Half Bridge, which has been optimized to drive a standard Philips PL-C10W and PLC18W lamp or similar lamp types. The ...
Low-Noise, High-Precision, JFET
... The OPA827 series of op amps can be used with single or dual supplies from an operating range of VS = +8V (±4V) and up to VS = +36V (±18V). This device does not require symmetrical supplies; it only requires a minimum supply voltage of 8V. Supply voltages higher than +40V (±20V) can permanently dama ...
... The OPA827 series of op amps can be used with single or dual supplies from an operating range of VS = +8V (±4V) and up to VS = +36V (±18V). This device does not require symmetrical supplies; it only requires a minimum supply voltage of 8V. Supply voltages higher than +40V (±20V) can permanently dama ...
AP7115
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
Switchyard - 123SeminarsOnly.com
... Isolator with earth switches (ES):The instrument current transformer (CT) steps down the current of a circuit to a lower value and is used in the same types of equipment as a potential transformer. This is done by constructing the secondary coil consisting of many turns of wire, around the primary c ...
... Isolator with earth switches (ES):The instrument current transformer (CT) steps down the current of a circuit to a lower value and is used in the same types of equipment as a potential transformer. This is done by constructing the secondary coil consisting of many turns of wire, around the primary c ...
Superposition Examples
... This example illustrates the use of superposition in solving for the dc bias currents in a BJT. The object is to solve for the collector current IC in the circuit of Fig. 9. Although no explicit dependent sources are shown, the three BJT currents are related by IC = βIB = αIE , where β is the curren ...
... This example illustrates the use of superposition in solving for the dc bias currents in a BJT. The object is to solve for the collector current IC in the circuit of Fig. 9. Although no explicit dependent sources are shown, the three BJT currents are related by IC = βIB = αIE , where β is the curren ...
REF3240-EP 数据资料 dataSheet 下载
... Supply voltages below the specified levels can cause the REF32xx to momentarily draw currents greater than the typical quiescent current. This momentary current draw can be prevented by using a power supply with a fast rising edge and low output impedance. For optimal startup when the IN pin and ENA ...
... Supply voltages below the specified levels can cause the REF32xx to momentarily draw currents greater than the typical quiescent current. This momentary current draw can be prevented by using a power supply with a fast rising edge and low output impedance. For optimal startup when the IN pin and ENA ...
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
... allows only positive power flow from the supply system to the load via a full-bridge diode rectifier. Negative power flow is not possible through the rectifier diode bridge. The six switching power devices can be constructed using power BJTs, GTOs, IGBTs, etc. The choice of switching devices is base ...
... allows only positive power flow from the supply system to the load via a full-bridge diode rectifier. Negative power flow is not possible through the rectifier diode bridge. The six switching power devices can be constructed using power BJTs, GTOs, IGBTs, etc. The choice of switching devices is base ...
(current, I).
... more complex the change in current is not intuitive. To understand the concepts behind current behavior is important as more complicated calculations depend on a firm understanding of concepts. Materials List: Computer with internet access, paper, pen or pencil and calculator Background: You should ...
... more complex the change in current is not intuitive. To understand the concepts behind current behavior is important as more complicated calculations depend on a firm understanding of concepts. Materials List: Computer with internet access, paper, pen or pencil and calculator Background: You should ...
A New Three-Phase Three-Winding Transformer Electromagnetic
... In view of the implicit trapezoidal method with considerable accuracy and good numerical stability, the electromagnetic transient program mostly uses this method. But when the grid topology changes, nonstate variables abrupt at same time, the implicit trapezoidal method calculates the equivalent cur ...
... In view of the implicit trapezoidal method with considerable accuracy and good numerical stability, the electromagnetic transient program mostly uses this method. But when the grid topology changes, nonstate variables abrupt at same time, the implicit trapezoidal method calculates the equivalent cur ...
Electricity(num)
... electrochemical cell E2 of emf 100 mV and a galvanometer G. In this set-up a balancing point is obtained at 40 cm mark from A. Calculate the resistance of R. If E2 were to have an emf of 300 mV, where will you expect the balancing point to be? [70 Ω] Two bulbs are 100 W and 500 W. Which bulb will gl ...
... electrochemical cell E2 of emf 100 mV and a galvanometer G. In this set-up a balancing point is obtained at 40 cm mark from A. Calculate the resistance of R. If E2 were to have an emf of 300 mV, where will you expect the balancing point to be? [70 Ω] Two bulbs are 100 W and 500 W. Which bulb will gl ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.