AP1539
... whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products ...
... whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products ...
Application Note 1048 A Low-Cost Surface Mount PIN Diode π Attenuator Introduction Background
... The PIN diode is generally considered to be a current controlled RF resistor. However, this model is accurate only at frequencies well above the diode’s cutoff frequency, fc = 1 / 2πτ, where τ is the minority carrier lifetime of the device. At frequencies 10 times fc, a PIN diode can accurately be m ...
... The PIN diode is generally considered to be a current controlled RF resistor. However, this model is accurate only at frequencies well above the diode’s cutoff frequency, fc = 1 / 2πτ, where τ is the minority carrier lifetime of the device. At frequencies 10 times fc, a PIN diode can accurately be m ...
P83123
... If the peak current exceeds the power supplies’ peak capacity, the output voltage provided by the power supplies may drop below the listed voltage range of the appliances connected to the supply and the voltage may not recover in some types of power supplies. For example, an auxiliary power supply t ...
... If the peak current exceeds the power supplies’ peak capacity, the output voltage provided by the power supplies may drop below the listed voltage range of the appliances connected to the supply and the voltage may not recover in some types of power supplies. For example, an auxiliary power supply t ...
a AN-581 APPLICATION NOTE Biasing and Decoupling Op Amps
... INPUT “HEADROOM” CONSIDERATIONS Some specialty op amps are designed for low voltage operation. When these are operated from a low voltage, single supply, such as 5 V or 3.3 V, input headroom limitations may be introduced. This can happen if the amplifier’s input stage does not limit symmetrically. ...
... INPUT “HEADROOM” CONSIDERATIONS Some specialty op amps are designed for low voltage operation. When these are operated from a low voltage, single supply, such as 5 V or 3.3 V, input headroom limitations may be introduced. This can happen if the amplifier’s input stage does not limit symmetrically. ...
SED1335F - Electrical and Information Technology
... The SED1335F is a graphics and character display controller for use with medium scale dot matrix LCDs. The SED1335F generates all the signals required by the display memory and LCD drivers, and incorporates a character generator ROM, so that flexible, low power, display systems can be designed with ...
... The SED1335F is a graphics and character display controller for use with medium scale dot matrix LCDs. The SED1335F generates all the signals required by the display memory and LCD drivers, and incorporates a character generator ROM, so that flexible, low power, display systems can be designed with ...
A new configuration and control of doubly fed induction generator
... The steady state operation of the UPQC-WG under super synchronous and sub synchronous speed range can be seen in Fig. 4. The generator is initialized at synchronous speed at 0 second. At 2 second a mechanical torque set point of –0.83 pu is fed to the generator. According to the maximum power tracki ...
... The steady state operation of the UPQC-WG under super synchronous and sub synchronous speed range can be seen in Fig. 4. The generator is initialized at synchronous speed at 0 second. At 2 second a mechanical torque set point of –0.83 pu is fed to the generator. According to the maximum power tracki ...
AP4340S Datasheet - Diodes Incorporated
... tOSC. When VCC voltage is lower than trigger voltage (VTRI), the periodical pulse in OUT pin is discontinued. When VCC voltage exceeds discharge voltage (VDIS), the discharge circuit will be enabled, a 1mA current will flow into VCC pin. When VCC voltage is higher than overshoot voltage (VOVP), AP43 ...
... tOSC. When VCC voltage is lower than trigger voltage (VTRI), the periodical pulse in OUT pin is discontinued. When VCC voltage exceeds discharge voltage (VDIS), the discharge circuit will be enabled, a 1mA current will flow into VCC pin. When VCC voltage is higher than overshoot voltage (VOVP), AP43 ...
power scan automotive probe/scope 0-30v
... NOTE: It is our policy to continually improve products and as such we reserve the right to alter data, specifications and component parts without prior notice. IMPORTANT: No liability is accepted for incorrect use of this product. WARRANTY: Guarantee is 12 months from purchase date, proof of which w ...
... NOTE: It is our policy to continually improve products and as such we reserve the right to alter data, specifications and component parts without prior notice. IMPORTANT: No liability is accepted for incorrect use of this product. WARRANTY: Guarantee is 12 months from purchase date, proof of which w ...
Complete Paper
... on and off periods of the devices. Voltage type PWM inverters have been employed widely to such as power supplies and motor drivers. This is because: (1) these inverters are well adjusted to high-speed self-turn-off switching devices that, as solid-state power converters, are made with recently deve ...
... on and off periods of the devices. Voltage type PWM inverters have been employed widely to such as power supplies and motor drivers. This is because: (1) these inverters are well adjusted to high-speed self-turn-off switching devices that, as solid-state power converters, are made with recently deve ...
ADDITIONAL SOLVED PROBLEMS FOR TEXT
... The output resistance is given by RO = rd || RD = 10k || 100k = 9.09k ASP 4.6: What is the voltage gain and input resistance of JFET amplifier shown in figure below? IGSS for JFET is 5 nA at VGS = -10V and transconductance of JFET is 1.2 mA/V. VDD = +12V ...
... The output resistance is given by RO = rd || RD = 10k || 100k = 9.09k ASP 4.6: What is the voltage gain and input resistance of JFET amplifier shown in figure below? IGSS for JFET is 5 nA at VGS = -10V and transconductance of JFET is 1.2 mA/V. VDD = +12V ...
UCC28060 数据资料 dataSheet 下载
... Optimized for high-volume consumer applications, this solution extends the advantages of transition mode—high efficiency with low-cost components—to higher power ratings than previously possible. By utilizing a Natural Interleaving technique, both channels operate as masters (that is, there is no sl ...
... Optimized for high-volume consumer applications, this solution extends the advantages of transition mode—high efficiency with low-cost components—to higher power ratings than previously possible. By utilizing a Natural Interleaving technique, both channels operate as masters (that is, there is no sl ...
ZRC250
... device is available in a small outline surface mount package, ideal for applications where space saving is important, as well as a package for through hole requirements. ...
... device is available in a small outline surface mount package, ideal for applications where space saving is important, as well as a package for through hole requirements. ...
Section 3 Chapter 1
... We wish to be able to talk about, solve for, and indicate clearly the directions for both current and voltage. For current, we wish to be clear about which direction positive charges are moving. For voltage, we wish to be clear about which direction would result in a positive charge losing energy. T ...
... We wish to be able to talk about, solve for, and indicate clearly the directions for both current and voltage. For current, we wish to be clear about which direction positive charges are moving. For voltage, we wish to be clear about which direction would result in a positive charge losing energy. T ...
W. Inam, K.K. Afridi and D.J. Perreault, “Variable Frequency Multiplier Technique for High Efficiency Conversion Over a Wide Operating Range,” 2014 IEEE Energy Conversion Congress and Exposition , Sept. 2014.
... currents may increase proportionally as load is decreased resulting in higher losses at light loads. With phase shift control, operation over a wide range is likewise challenging. In many resonant converters, when two legs of the inverter are phase shifted with respect to each other, they have asymm ...
... currents may increase proportionally as load is decreased resulting in higher losses at light loads. With phase shift control, operation over a wide range is likewise challenging. In many resonant converters, when two legs of the inverter are phase shifted with respect to each other, they have asymm ...
Implementation of Control Center Based Voltage and Var
... Reactive power (var) compensation devices are designed to reduce or eliminate the unproductive component of the current and thus energy loss. Reactive compensation devices, such as capacitor banks, are used to reduce the reactive power flows through out the distribution network. The capacitor banks ...
... Reactive power (var) compensation devices are designed to reduce or eliminate the unproductive component of the current and thus energy loss. Reactive compensation devices, such as capacitor banks, are used to reduce the reactive power flows through out the distribution network. The capacitor banks ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.