AAT4626 数据资料DataSheet下载
... in the Typical Characteristics section of this datasheet. If a short circuit were to occur on the load applied to either the A or B output, there would be a demand for more current than what is allowed by the internal current limiting circuit and the voltage at the device output will drop. This caus ...
... in the Typical Characteristics section of this datasheet. If a short circuit were to occur on the load applied to either the A or B output, there would be a demand for more current than what is allowed by the internal current limiting circuit and the voltage at the device output will drop. This caus ...
Optimal Voltage Regulators Placement in Radial Distribution System
... Let the initial voltage regulators are located at buses 8, 11, 13 and 18 as shown in Fig.2 It is proposed to reduce the number of VRs in a practical system by shifting the VR’s to the junction of laterals (such as from buses 11 and 13 to bus 10) and observe the voltage profile and the objective func ...
... Let the initial voltage regulators are located at buses 8, 11, 13 and 18 as shown in Fig.2 It is proposed to reduce the number of VRs in a practical system by shifting the VR’s to the junction of laterals (such as from buses 11 and 13 to bus 10) and observe the voltage profile and the objective func ...
Comments on 802.3-2012 - IEEE Standard for Ethernet
... basic safeguard [b-IEC 62368-1]: safeguard that provides protection under normal operating conditions and under abnormal operating conditions whenever an energy source capable of causing pain or injury is present in the equipment prospective touch voltage [b-IEC 62368-1]: voltage between simultaneou ...
... basic safeguard [b-IEC 62368-1]: safeguard that provides protection under normal operating conditions and under abnormal operating conditions whenever an energy source capable of causing pain or injury is present in the equipment prospective touch voltage [b-IEC 62368-1]: voltage between simultaneou ...
HMC722LC3C 数据资料DataSheet下载
... The HMC722LC3C is an AND/NAND/OR/NOR function designed to support data transmission rates of up to 13 Gbps, and clock frequencies as high as 13 GHz. The HMC772LC3C may be easily configured to provide any of the following logic functions: AND, NAND, OR and NOR. The HMC722LC3C also features an output ...
... The HMC722LC3C is an AND/NAND/OR/NOR function designed to support data transmission rates of up to 13 Gbps, and clock frequencies as high as 13 GHz. The HMC772LC3C may be easily configured to provide any of the following logic functions: AND, NAND, OR and NOR. The HMC722LC3C also features an output ...
MAX16935 36V, 3.5A, 2.2MHz Step-Down Converter with 28µA Quiescent Current General Description
... Open-Drain, Power-Good Output. PGOOD asserts when VOUT is above 95% regulation point. PGOOD goes low when VOUT is below 92% regulation point. Exposed Pad. Connect EP to a large-area contiguous copper ground plane for effective power dissipation. Do not use as the only IC ground connection. EP must b ...
... Open-Drain, Power-Good Output. PGOOD asserts when VOUT is above 95% regulation point. PGOOD goes low when VOUT is below 92% regulation point. Exposed Pad. Connect EP to a large-area contiguous copper ground plane for effective power dissipation. Do not use as the only IC ground connection. EP must b ...
Research Journal of Applied Sciences, Engineering and Technology 7(2): 388-395,... ISSN: 2040-7459; e-ISSN: 2040-7467
... inductive static Var compensator. The proposed configuration is constructed of a traditional TCR shunted by a parallel resonance circuit and the parallel combination is connected in series to a series resonance circuit. The parallel and series resonance circuits are tuned at the power system fundame ...
... inductive static Var compensator. The proposed configuration is constructed of a traditional TCR shunted by a parallel resonance circuit and the parallel combination is connected in series to a series resonance circuit. The parallel and series resonance circuits are tuned at the power system fundame ...
FEATURES DESCRIPTION D
... Current . . . . . . . . . . . . . . . . . . . . . ±10mA Short-Circuit Current(3) . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Operating Temperature Range . . . . . . . . . . . . . . . −40°C to +125°C Storage Temperature Range . . . . . . . . . . . . . . . . . −65°C to +150°C Junction ...
... Current . . . . . . . . . . . . . . . . . . . . . ±10mA Short-Circuit Current(3) . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Operating Temperature Range . . . . . . . . . . . . . . . −40°C to +125°C Storage Temperature Range . . . . . . . . . . . . . . . . . −65°C to +150°C Junction ...
Dynamic Thermal Management for FinFET
... limit the peak temperature on circuit substrates comprised of planar CMOS devices running in the super-threshold voltage regime to save power or maximize performance. To the best of our knowledge no previous work has studied the question of optimal DTM policy design for FinFET-based VLSI circuits th ...
... limit the peak temperature on circuit substrates comprised of planar CMOS devices running in the super-threshold voltage regime to save power or maximize performance. To the best of our knowledge no previous work has studied the question of optimal DTM policy design for FinFET-based VLSI circuits th ...
Application Note
... e. What is the maximum power dissipation during the tripped state? - For some specific battery powered applications with strict standby or operation current, the tripped current (and indirectly the power dissipation) is very important. f. What is the resistance ratio (normal vs. tripped)? - This is ...
... e. What is the maximum power dissipation during the tripped state? - For some specific battery powered applications with strict standby or operation current, the tripped current (and indirectly the power dissipation) is very important. f. What is the resistance ratio (normal vs. tripped)? - This is ...
PDF：2.06MB
... As shown in Fig.2.2 high voltage diodes with low reverse-recovery charge and corresponding low reverse recovery time are connected between the “DESAT” terminals (Anode of the diode) and the IGBT’s collector terminals with the cathode of the diode. Additionally blanking capacitors filtering spikes ar ...
... As shown in Fig.2.2 high voltage diodes with low reverse-recovery charge and corresponding low reverse recovery time are connected between the “DESAT” terminals (Anode of the diode) and the IGBT’s collector terminals with the cathode of the diode. Additionally blanking capacitors filtering spikes ar ...
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
... MPP, which results from a steeper slope in the P–V curve, as shownin Fig. 10. Then, by calculating the voltage ripple of vpv and the power loss, the plots of Cpv versus voltage-ripple percentage and power-loss percentage are illustrated in Fig. 11. The power loss due to double line-frequency in a si ...
... MPP, which results from a steeper slope in the P–V curve, as shownin Fig. 10. Then, by calculating the voltage ripple of vpv and the power loss, the plots of Cpv versus voltage-ripple percentage and power-loss percentage are illustrated in Fig. 11. The power loss due to double line-frequency in a si ...
LM3875 - Elcodis.com
... *DC Electrical Test; refer to Test Circuit #1. **AC Electrical Test; refer to Test Circuit #2. Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific perform ...
... *DC Electrical Test; refer to Test Circuit #1. **AC Electrical Test; refer to Test Circuit #2. Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific perform ...
ZRC330
... package, ideal for applications where space saving is important. The ZRC330 design provides a stable voltage without an external capacitor and is stable with capacitive loads. The ZRC330 is recommended for operation between 20µA and 5mA and so is ideally suited to low power and battery powered appli ...
... package, ideal for applications where space saving is important. The ZRC330 design provides a stable voltage without an external capacitor and is stable with capacitive loads. The ZRC330 is recommended for operation between 20µA and 5mA and so is ideally suited to low power and battery powered appli ...
physics 251: test study sheet
... 1. Analyze the basic operation of a transformer. Determine if a transformer is a step-up or step-down transformer. Find the output voltage of the secondary coil given the input voltage at the primary coil and the number of turns in each coil. Find the current drawn by the primary given the load resi ...
... 1. Analyze the basic operation of a transformer. Determine if a transformer is a step-up or step-down transformer. Find the output voltage of the secondary coil given the input voltage at the primary coil and the number of turns in each coil. Find the current drawn by the primary given the load resi ...
Design and Implementation High Speed Low Power Cam
... proposed design also increases with the number of Another contributing factor to the reduced average power mismatches, it will soon reach its limit due to the presence consumption is that the new design does not need to preof the gated-power transistor Px. For instance, when 128 charge the SL buses ...
... proposed design also increases with the number of Another contributing factor to the reduced average power mismatches, it will soon reach its limit due to the presence consumption is that the new design does not need to preof the gated-power transistor Px. For instance, when 128 charge the SL buses ...
reduction of switches and voltage divices in new cascaded h
... with combination of two unidirectional switches and one DC voltage source is used as proposed topology for developing the proposed H – Bridge. In proposed circuit, a IGBT with anti parallel diode is used as switch, which is capable of blocking voltage in reverse direction and allows current flow in ...
... with combination of two unidirectional switches and one DC voltage source is used as proposed topology for developing the proposed H – Bridge. In proposed circuit, a IGBT with anti parallel diode is used as switch, which is capable of blocking voltage in reverse direction and allows current flow in ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.