VIT Self Healing System
... But the recloser, sectionalizer scheme can not isolate the load side of faulted section, so during loop operation, it gives unnecessary short circuit impact to the network and make it difficult to coordination each other. The voltage-time controlled scheme can be used in loop network, but it has dis ...
... But the recloser, sectionalizer scheme can not isolate the load side of faulted section, so during loop operation, it gives unnecessary short circuit impact to the network and make it difficult to coordination each other. The voltage-time controlled scheme can be used in loop network, but it has dis ...
Chaos Lab
... nearby points can evolve quickly into very different states), a property sometimes known as the butterfly effect, and 3. Being topologically transitive. This basically means that groups of points which are initially contained can expand rapidly to large sets, ...
... nearby points can evolve quickly into very different states), a property sometimes known as the butterfly effect, and 3. Being topologically transitive. This basically means that groups of points which are initially contained can expand rapidly to large sets, ...
Application Note
... • The improvement in current sharing comes with the disadvantage of higher power consumption in the resistors and lower system efficiency. • If a single LED fails short, the remaining LEDS in the same string will be exposed to a higher stress level as they are forced to handle a larger share of curr ...
... • The improvement in current sharing comes with the disadvantage of higher power consumption in the resistors and lower system efficiency. • If a single LED fails short, the remaining LEDS in the same string will be exposed to a higher stress level as they are forced to handle a larger share of curr ...
SIFT Scanner System
... results, so the math doesn’t become a problem. If the tester can loop every 100 msec and the spot size is 1 um across a small die such as 2mmX2mm it will take 400000 seconds (4.6 days) to complete 1 scan. SIFT allows for variable spot sizes and step values to allow quick reduction of the scan area t ...
... results, so the math doesn’t become a problem. If the tester can loop every 100 msec and the spot size is 1 um across a small die such as 2mmX2mm it will take 400000 seconds (4.6 days) to complete 1 scan. SIFT allows for variable spot sizes and step values to allow quick reduction of the scan area t ...
Synthesis Techniques for Low-Power Hard Real-Time Systems on Variable Voltage Processors
... Each of the processors considered is able to issue at most a single instruction per clock period. Thus, caches were designed to have a single access port. A subset of the cache model data is given in Tables 2 and 3. Cache access delay and power consumption model were computed for a number of organiz ...
... Each of the processors considered is able to issue at most a single instruction per clock period. Thus, caches were designed to have a single access port. A subset of the cache model data is given in Tables 2 and 3. Cache access delay and power consumption model were computed for a number of organiz ...
T D K 5 1 1 0 F
... In the POWER DOWN MODE the complete chip is switched off. The current consumption is typically 0.3 nA at 3 V 25°C. This current doubles every 8°C. The values for higher temperatures are typically 14 nA at 85°C and typically 600 nA at 125°C. ...
... In the POWER DOWN MODE the complete chip is switched off. The current consumption is typically 0.3 nA at 3 V 25°C. This current doubles every 8°C. The values for higher temperatures are typically 14 nA at 85°C and typically 600 nA at 125°C. ...
4 RC Circuits Experiment 4.1
... this “stored” charge. Because the two plates have different signs of electric charge, there is a net electric field between the two plates. Hence, there is a voltage difference across the plates. If, some time later, we connect the plates again in a circuit, say this time with a light bulb in place ...
... this “stored” charge. Because the two plates have different signs of electric charge, there is a net electric field between the two plates. Hence, there is a voltage difference across the plates. If, some time later, we connect the plates again in a circuit, say this time with a light bulb in place ...
electricity practice problems
... A German physicist, Georg S. Ohm, developed this mathematical relationship, which is present in most circuits. This relationship is known as Ohm's law. This relationship states that if the voltage (energy) in a circuit increases, so does the current (flow of charges). If the resistance increases, th ...
... A German physicist, Georg S. Ohm, developed this mathematical relationship, which is present in most circuits. This relationship is known as Ohm's law. This relationship states that if the voltage (energy) in a circuit increases, so does the current (flow of charges). If the resistance increases, th ...
L2_sensor_ec
... In addition, the manufacturer is asked to verify the poly-silicon resistor value, implant resistivity, coupling capacitor value and its breakdown as well as the aluminium resistance on the test structures. The vendor provides these results as average value per delivered batch (the 100 sensors came ...
... In addition, the manufacturer is asked to verify the poly-silicon resistor value, implant resistivity, coupling capacitor value and its breakdown as well as the aluminium resistance on the test structures. The vendor provides these results as average value per delivered batch (the 100 sensors came ...
TPS77101-Q1 数据资料 dataSheet 下载
... Because the PMOS device behaves as a low-value resistor, the dropout voltage is low (typically 115 mV at an output current of 150 mA for 3.3-V option) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is lo ...
... Because the PMOS device behaves as a low-value resistor, the dropout voltage is low (typically 115 mV at an output current of 150 mA for 3.3-V option) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is lo ...
Enhancement of THD in HVDC System using Shunt Active Power
... This class of filters constitutes the most important and widely used filter configuration in industrial process. It is connected in parallel to the main power circuit as shown in Fig.2.1. The concept of the shunt active power filter is based on harmonic cancellation through the act of injecting equa ...
... This class of filters constitutes the most important and widely used filter configuration in industrial process. It is connected in parallel to the main power circuit as shown in Fig.2.1. The concept of the shunt active power filter is based on harmonic cancellation through the act of injecting equa ...
LTC1152 - Rail-to-Rail Input Rail-to-Rail Output
... The LTC1152 is a zero-drift op amp. Like other LTC zerodrift op amps, it features virtually error-free DC performance, very little drift over time and temperature, and very low noise at low frequencies. The internal nulling clock runs at about 2.3kHz (the charge pump frequency of 4.7MHz divided by 2 ...
... The LTC1152 is a zero-drift op amp. Like other LTC zerodrift op amps, it features virtually error-free DC performance, very little drift over time and temperature, and very low noise at low frequencies. The internal nulling clock runs at about 2.3kHz (the charge pump frequency of 4.7MHz divided by 2 ...
TRIAC analog control circuits for inductive loads
... Synchronization across the TRIAC - waveforms (delayed turn on) Mains voltage Gate pulse T ...
... Synchronization across the TRIAC - waveforms (delayed turn on) Mains voltage Gate pulse T ...
ADM2209E 数据手册DataSheet 下载
... (Electrical Fast Transient) discharges. A simplified schematic of the protection structure is shown in Figures 22a and 22b. Each input and output contains two back-to-back high speed clamping diodes. During normal operation with maximum RS-232 signal levels, the diodes have no effect as one or the o ...
... (Electrical Fast Transient) discharges. A simplified schematic of the protection structure is shown in Figures 22a and 22b. Each input and output contains two back-to-back high speed clamping diodes. During normal operation with maximum RS-232 signal levels, the diodes have no effect as one or the o ...
CAT4016 - LED Driver, 16-Channel, Constant Current
... contains a 16−bit serial to parallel shift register (S1−S16) and a 16−bit latch (L1−L16). Programming the serial to parallel register is accomplished via SIN and CLK input pins. On each rising edge of the CLK signal, the data from SIN is moved through the shift register serially. Data is also moved ...
... contains a 16−bit serial to parallel shift register (S1−S16) and a 16−bit latch (L1−L16). Programming the serial to parallel register is accomplished via SIN and CLK input pins. On each rising edge of the CLK signal, the data from SIN is moved through the shift register serially. Data is also moved ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.