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ZXCT1081 High voltage high
ZXCT1081 High voltage high

... Higher values for RSENSE gives better accuracy at low load currents by reducing the inaccuracies due to internal offsets. For best operation the ZXCT1081 has been designed to operate with VSENSE of the order of 50mV to 150mV. Current monitors' basic configuration is that of a unipolar voltage to cur ...
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... begin to flow in the circuit to charge up the capacitor, so that all of the voltage ∆V = IR appears across the resistor. ...
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... When a customer buys an integrated circuit – a gate or an operational amplifier – from a semiconductor manufacturer, it contains considerably more transistors and diodes than are necessary for the basic function. The additional components, such as the clamping diodes on the inputs and outputs of log ...
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FXMAR2104 Dual-Supply, 4-Bit Voltage Translator / Isolator for Open-Drain and Push-Pull Applications

... specification voltage levels. Eight internal 10KΩ pull-up resistors are integrated. The device is designed so that the A port tracks the VCCA level and the B port tracks the VCCB level. This allows for bi-directional A/B port voltage translation between any two levels from 1.65V to 5.5V. VCCA can eq ...
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... The circuit is a typical class C Parallel inverter. Assume TN to be ON and TP to be OFF. The bottom of the commutating capacitor is charged to twice the supply voltage and remains at this value until TP is turned on. When TP is turned on, the current flows through lower half of the primary TP and co ...
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... soft-start capacitor is held low during UVLO and during a line overvoltage or undervoltage condition. Once an overvoltage or undervoltage fault occurs, the soft-start capacitor is discharged by a current equal to its charging current. The capacitor does not quickly discharge during faults. In this w ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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