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Wide Input Range Non-Synchronous Voltage Mode Controller (Rev
Wide Input Range Non-Synchronous Voltage Mode Controller (Rev

The New PL and New PL-P Series of manual and bus remote
The New PL and New PL-P Series of manual and bus remote

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All-printed diode operating at 1.6 GHz
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... consider conventional inorganic semiconductors comprising high mobility and carrier concentration and modify the processing method to make it compatible with low temperature processing and traditional printing techniques(13). One way to achieve this is to utilize nanoparticle semiconductor inks, a r ...
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... system as shown, we can expect to measure 60 volts from each line to ground. Leakage current may at this time be measured by connecting an mA or microamp meter from either L1 or L2 to ground. The 50µA assumed current means that each capacitance has an impedance of 1.2 x 106 ohms (Z = V/I = 60/(50 x ...
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application of resonant converter in ozone generator
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Harmonics upstream of rectifiers in UPS

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... 5. Consideration on Permissible Dissipation and Heat Generation Since this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including l ...
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... Although the LM101A is designed for trouble free operation, experience has indicated that it is wise to observe certain precautions given below to protect the devices from abnormal operating conditions. It might be pointed out that the advice given here is applicable to practically any IC op amp, al ...
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... for Two to Six White LEDs The MAX1561/MAX1599 step-up converters drive up to six white LEDs with a constant current to provide backlight in cell phones, PDAs, and other hand-held devices. The step-up converter topology allows series connection of the white LEDs so the LED currents are identical for ...
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The Design and Testing of an Automatic RF Conditioning System for

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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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