This application note explains the benefits of using the voltage-identification technique to reduce power consumption and system costs.
... requirement to upgrade from the lowest cost commercial temperature range (C) device to extended temperature range (E) or industrial temperature range (I) devices. The voltage-identification technique should interest designers of commercial products that must operate in a totally enclosed environment ...
... requirement to upgrade from the lowest cost commercial temperature range (C) device to extended temperature range (E) or industrial temperature range (I) devices. The voltage-identification technique should interest designers of commercial products that must operate in a totally enclosed environment ...
SiGe - NTU
... speeds inexcess of 100 Gb/s and wireless systems in the 100GHz range. This has led to new device structures that reduce base and collector resistance and to a vertical and lateral device scaling resulting in f(t) and f(max) values above 200GHz Here,we report on a high-speed SiGe:C HBT technology tha ...
... speeds inexcess of 100 Gb/s and wireless systems in the 100GHz range. This has led to new device structures that reduce base and collector resistance and to a vertical and lateral device scaling resulting in f(t) and f(max) values above 200GHz Here,we report on a high-speed SiGe:C HBT technology tha ...
MAX1717 Dynamically Adjustable, Synchronous Step-Down Controller for Notebook CPUs General Description
... CPU DC-DC converters in notebook computers. It features a dynamically adjustable output, ultra-fast transient response, high DC accuracy, and high efficiency needed for leading-edge CPU core power supplies. Maxim’s proprietary Quick-PWM™ quick-response, constant-on-time PWM control scheme handles wi ...
... CPU DC-DC converters in notebook computers. It features a dynamically adjustable output, ultra-fast transient response, high DC accuracy, and high efficiency needed for leading-edge CPU core power supplies. Maxim’s proprietary Quick-PWM™ quick-response, constant-on-time PWM control scheme handles wi ...
Maxim MAX471 Current-Sense Amplifier
... the same time. The MAX472 is identical to the MAX471, except that RSENSE and gain-setting resistors RG1 and RG2 are external (Figure 2). To analyze the circuit of Figure 1, assume that current flows from RS+ to RS- and that OUT is connected to GND through a resistor. In this case, amplifier A1 is ac ...
... the same time. The MAX472 is identical to the MAX471, except that RSENSE and gain-setting resistors RG1 and RG2 are external (Figure 2). To analyze the circuit of Figure 1, assume that current flows from RS+ to RS- and that OUT is connected to GND through a resistor. In this case, amplifier A1 is ac ...
Ultra Low Power Boost Converter with Battery Management for
... The bq25504 was designed with the flexibility to support a variety of energy storage elements. The availability of the sources from which harvesters extract their energy can often be sporadic or time-varying. Systems will typically need some type of energy storage element, such as a rechargeable bat ...
... The bq25504 was designed with the flexibility to support a variety of energy storage elements. The availability of the sources from which harvesters extract their energy can often be sporadic or time-varying. Systems will typically need some type of energy storage element, such as a rechargeable bat ...
RURG3060 30 A, 600 V, Ultrafast Diode Features Description
... Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 130oC) ...
... Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 130oC) ...
AN-376 Logic-System Design Techniques Reduce Switching
... of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein ...
... of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein ...
The DatasheetArchive - Datasheet Search Engine
... LC tank, as a VCO using PLL synthesis, or dtiven from an external c~stal oscillator, It has been run to 190 MHz.* A buffered output is available at Pin 20. The second local oscillator is a common base Colpitts type which is typically run at 10.245 MHz under crystal control. A buffered output is avai ...
... LC tank, as a VCO using PLL synthesis, or dtiven from an external c~stal oscillator, It has been run to 190 MHz.* A buffered output is available at Pin 20. The second local oscillator is a common base Colpitts type which is typically run at 10.245 MHz under crystal control. A buffered output is avai ...
Operating and installation instructions MSE Haustechnik ZL
... Only such lines as are used for the wiring of the motor control unit should be routed into this box. Alternatively, the MSE can be supplied in a surface-mounted housing (not for outdoor use, Fig. 4). Installation must be indoors. The device is not suitable for use in damp interiors. The electrical c ...
... Only such lines as are used for the wiring of the motor control unit should be routed into this box. Alternatively, the MSE can be supplied in a surface-mounted housing (not for outdoor use, Fig. 4). Installation must be indoors. The device is not suitable for use in damp interiors. The electrical c ...
Capacitors in Series and Parallel
... Capacitors are manufactured with certain standard capacitances ...
... Capacitors are manufactured with certain standard capacitances ...
LT1509 Power Factor and PWM Controller BLOCK DIAGRAM W
... RSET (Pin 15): A resistor from RSET to GND sets the oscillator charging current and the maximum multiplier output current which is used to limit the maximum line current. IM(MAX) = 3.75V/RSET SS1 (Pin 16): Soft Start. SS1 is reset to zero for low VCC. When VCC rises above lockout threshold, SS1 is r ...
... RSET (Pin 15): A resistor from RSET to GND sets the oscillator charging current and the maximum multiplier output current which is used to limit the maximum line current. IM(MAX) = 3.75V/RSET SS1 (Pin 16): Soft Start. SS1 is reset to zero for low VCC. When VCC rises above lockout threshold, SS1 is r ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.