SN65LVDT14-EP 数据资料 dataSheet 下载
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
LSK489 Applica on Note
... the JFET. This is referred to as G-R noise. This excess noise is governed by fluctua on in the number of carriers in the channel and the lif me of the carriers. G-R noise manifests itself as drain current noise. When referred back to the input by the trans-conductance of the JFET, it is expressed as ...
... the JFET. This is referred to as G-R noise. This excess noise is governed by fluctua on in the number of carriers in the channel and the lif me of the carriers. G-R noise manifests itself as drain current noise. When referred back to the input by the trans-conductance of the JFET, it is expressed as ...
AN82 - Understanding and Applying Voltage
... effect is not unlike that produced by the sticky juice extravasated from a ruptured electrolytic capacitor. Leakage from ground, supply rails and other circuit potentials into NC, trim and other sensitive pins through conductive flux residues will cause output voltage shifts. Even if the leakage pat ...
... effect is not unlike that produced by the sticky juice extravasated from a ruptured electrolytic capacitor. Leakage from ground, supply rails and other circuit potentials into NC, trim and other sensitive pins through conductive flux residues will cause output voltage shifts. Even if the leakage pat ...
Versatile Unified Power Quality Conditioner
... Although the 4-Leg converter has a greater number of switches, the power rating of the devices that compose its fourth leg is reduced, because the current that flows through the neutral conductor in most cases is low. A. Dual Compensation Principle In order to make the input currents sinusoidal, bal ...
... Although the 4-Leg converter has a greater number of switches, the power rating of the devices that compose its fourth leg is reduced, because the current that flows through the neutral conductor in most cases is low. A. Dual Compensation Principle In order to make the input currents sinusoidal, bal ...
Introduction to MatLab: Circuit Analysis
... • A current storage device • Analogous to the inertial effect of the flow of a fluid. The inductance is the mass that is moving. • Inductor Law V=L*dI/dt (dI/dt is the “rate of change” in the current. This is analogous to velocity.) Introduction to MatLab: Circuit Analysis ...
... • A current storage device • Analogous to the inertial effect of the flow of a fluid. The inductance is the mass that is moving. • Inductor Law V=L*dI/dt (dI/dt is the “rate of change” in the current. This is analogous to velocity.) Introduction to MatLab: Circuit Analysis ...
Life-Limiting Factors in Electrolytic Capacitors
... Electrolytic Capacitors are a Critical Element in Power Electronics Designs Different applications in power electronics have different requirements when it comes to selecting electrolytic capacitors. However the one requirement in common in most of these applications is the need for high ripple cur ...
... Electrolytic Capacitors are a Critical Element in Power Electronics Designs Different applications in power electronics have different requirements when it comes to selecting electrolytic capacitors. However the one requirement in common in most of these applications is the need for high ripple cur ...
www.BDTIC.com/TI Implications of Slow or Floating CMOS Inputs SCBA004C
... the noise generated on the power rails when the output switches, can cause excessive output errors or oscillations. Similar situations can occur if an unused input is left floating or is not actively held at a valid logic level. These functional problems are due to voltage transients induced on the ...
... the noise generated on the power rails when the output switches, can cause excessive output errors or oscillations. Similar situations can occur if an unused input is left floating or is not actively held at a valid logic level. These functional problems are due to voltage transients induced on the ...
BD88400FJ
... The headphone amplifier is driven by the internal positive voltage (+2.4V) and negative voltage (SVSS, -2.4V) based on ground (SGND). Therefore, the headphone can be connected without the output coupling capacitor. As a result, it brings improvement to low-frequency characteristic compared with the ...
... The headphone amplifier is driven by the internal positive voltage (+2.4V) and negative voltage (SVSS, -2.4V) based on ground (SGND). Therefore, the headphone can be connected without the output coupling capacitor. As a result, it brings improvement to low-frequency characteristic compared with the ...
- VS Technologies
... the nature of the load changes. Therefore, some attempts have been made to maintain a constant terminal voltage using active switches which use the combination of a fixed capacitor and thyristor-controlled inductor known as static var compensator (SVC) [11]. The SVC-based voltage regulating methods ...
... the nature of the load changes. Therefore, some attempts have been made to maintain a constant terminal voltage using active switches which use the combination of a fixed capacitor and thyristor-controlled inductor known as static var compensator (SVC) [11]. The SVC-based voltage regulating methods ...
MAX9940 - Maxim Integrated
... diode from INT to VCC. This allows the voltage at INT to stay at VDD even though VCC = 0, thus drawing no current from RP or the battery. However, an internal diode does exist from INT to EXT, and therefore, in the event of a short to GND fault on EXT, current is drawn through RP, causing a power dr ...
... diode from INT to VCC. This allows the voltage at INT to stay at VDD even though VCC = 0, thus drawing no current from RP or the battery. However, an internal diode does exist from INT to EXT, and therefore, in the event of a short to GND fault on EXT, current is drawn through RP, causing a power dr ...
1 Scope
... impede the passage of electromagnetic energy. In general, a BN need not be connected to earth but all BNs considered in this Recommendation will have an earth connection. Bonding terminal (K.66): This is a terminal provided to allow easy connection of bonding conductors at point of entry of services ...
... impede the passage of electromagnetic energy. In general, a BN need not be connected to earth but all BNs considered in this Recommendation will have an earth connection. Bonding terminal (K.66): This is a terminal provided to allow easy connection of bonding conductors at point of entry of services ...
PBSS8110Z 1. Product profile 100 V, 1 A NPN low V
... such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without fu ...
... such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without fu ...
VOD223T - Vishay
... statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or ...
... statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.