DRV603 数据资料 dataSheet 下载
... CHARGE PUMP FLYING CAPACITOR AND PVSS CAPACITOR The charge pump flying capacitor serves to transfer charge during the generation of the negative supply voltage. The PVSS capacitor must be at least equal to the charge pump capacitor in order to allow maximum charge transfer. Low-ESR capacitors are an ...
... CHARGE PUMP FLYING CAPACITOR AND PVSS CAPACITOR The charge pump flying capacitor serves to transfer charge during the generation of the negative supply voltage. The PVSS capacitor must be at least equal to the charge pump capacitor in order to allow maximum charge transfer. Low-ESR capacitors are an ...
hmc424lp3 product note
... Negative biased digital attenuators have the advantage of operation over wide RF bandwidths and excellent attenuation accuracy down to DC. Conversely, positive biased digital attenuators have a low frequency limit imposed by the on-chip-capacitors used for RF grounding. Therefore a negative biased a ...
... Negative biased digital attenuators have the advantage of operation over wide RF bandwidths and excellent attenuation accuracy down to DC. Conversely, positive biased digital attenuators have a low frequency limit imposed by the on-chip-capacitors used for RF grounding. Therefore a negative biased a ...
LMK60E2-150M, LMK60E2-156M
... The following sections provides recommendations for board layout, solder reflow profile and power supply bypassing when using LMK60XX to ensure good thermal / electrical performance and overall signal integrity of entire system. 9.1.1 Ensuring Thermal Reliability The LMK60XX is a high performance de ...
... The following sections provides recommendations for board layout, solder reflow profile and power supply bypassing when using LMK60XX to ensure good thermal / electrical performance and overall signal integrity of entire system. 9.1.1 Ensuring Thermal Reliability The LMK60XX is a high performance de ...
TYPES OF SEMICONDUCTOR DIODE - IDC
... and as photodetectors. PIN diodes are also used in power electronics, as their central layer can withstand high voltages. Furthermore, the PIN structure can be found in many power semiconductor devices, such as IGBTs, power MOSFETs, and thyristors. Varicap or varactor diodes These are used as voltag ...
... and as photodetectors. PIN diodes are also used in power electronics, as their central layer can withstand high voltages. Furthermore, the PIN structure can be found in many power semiconductor devices, such as IGBTs, power MOSFETs, and thyristors. Varicap or varactor diodes These are used as voltag ...
1,6,7,14,20,25,28,29,31,34,36,37,40,54,57,64
... Visualize: The switch in the circuit in Figure Ex31.40 is in position a. When the switch is in position b the circuit consists of a capacitor and a resistor. Solve: (a) The switch has been in position a for a long time. That means the capacitor is fully charged to a charge Q0 = C∆V = C E = (2 µF)(9 ...
... Visualize: The switch in the circuit in Figure Ex31.40 is in position a. When the switch is in position b the circuit consists of a capacitor and a resistor. Solve: (a) The switch has been in position a for a long time. That means the capacitor is fully charged to a charge Q0 = C∆V = C E = (2 µF)(9 ...
LM5010A, Q1 High-Voltage 1-A Step-Down
... between 6V and the bypass threshold (nominally 8.9V), the bypass switch (Q2) is on, and VCC tracks VIN within 100 mV to 150 mV. The bypass switch on-resistance is approximately 50Ω, with inherent current limiting at approximately 100 mA. When VIN is above the bypass threshold, Q2 is turned off, and ...
... between 6V and the bypass threshold (nominally 8.9V), the bypass switch (Q2) is on, and VCC tracks VIN within 100 mV to 150 mV. The bypass switch on-resistance is approximately 50Ω, with inherent current limiting at approximately 100 mA. When VIN is above the bypass threshold, Q2 is turned off, and ...
Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator ADCMP603
... coupling between the two supplies and to take advantage of the additional bypass capacitance from each respective supply to the ground plane. This enhances the performance when split input/output supplies are used. If the input and output supplies are connected together for single-supply operation s ...
... coupling between the two supplies and to take advantage of the additional bypass capacitance from each respective supply to the ground plane. This enhances the performance when split input/output supplies are used. If the input and output supplies are connected together for single-supply operation s ...
O A
... memory device scaling towards 10 nm technology node with blistering speed, surpassing both logic and DRAM (Lu, C.Y., 2012). In this device, the charge is stored on a conducting layer that is completely isolated from other structures by a very thin dielectric film. The operational of floating gate de ...
... memory device scaling towards 10 nm technology node with blistering speed, surpassing both logic and DRAM (Lu, C.Y., 2012). In this device, the charge is stored on a conducting layer that is completely isolated from other structures by a very thin dielectric film. The operational of floating gate de ...
A Resonant Series Counterpulse Technique for High Current Opening Switches
... must have a fast response (better than 10 p)so that not too much rail accelerator length is wasted. A thyristor is a good candidate because of its fast switching action. C . The Thyristor Switch As the name already implies, thyristors are used for this switch. It must be able to block the initial vo ...
... must have a fast response (better than 10 p)so that not too much rail accelerator length is wasted. A thyristor is a good candidate because of its fast switching action. C . The Thyristor Switch As the name already implies, thyristors are used for this switch. It must be able to block the initial vo ...
Operating instructions K3G175RC0503 - ebm
... instance when reaching into the device during operation. → Operate the device only with a fixed protective device and guard grille.# The fixed protective device must be able to withstand the kinetic energy of a fan blade that becomes detached at maximum speed. There must not be any gaps which it is ...
... instance when reaching into the device during operation. → Operate the device only with a fixed protective device and guard grille.# The fixed protective device must be able to withstand the kinetic energy of a fan blade that becomes detached at maximum speed. There must not be any gaps which it is ...
MAX1895/MAX1995 High-Efficiency, Wide Brightness Range, CCFL Backlight Controllers General Description
... in three ways: linearly controlling the lamp current, digital pulse-width modulating (DPWM) the lamp current, or using both methods simultaneously to achieve the widest dimming range (>30:1). CCFL brightness can be controlled with either an analog voltage (both MAX1895 and MAX1995) or a two-wire SMB ...
... in three ways: linearly controlling the lamp current, digital pulse-width modulating (DPWM) the lamp current, or using both methods simultaneously to achieve the widest dimming range (>30:1). CCFL brightness can be controlled with either an analog voltage (both MAX1895 and MAX1995) or a two-wire SMB ...
PAM8302L Description Features Pin Assignments Applications
... The PAM8302L incorporates circuitry to detect low on or off voltage. When the supply voltage drops to 2.1V or below, the PAM8302L goes into a state of shutdown, and the device comes out of its shutdown state to normal operation by reset the power supply or SD pin. ...
... The PAM8302L incorporates circuitry to detect low on or off voltage. When the supply voltage drops to 2.1V or below, the PAM8302L goes into a state of shutdown, and the device comes out of its shutdown state to normal operation by reset the power supply or SD pin. ...
AP3154A - Diodes Incorporated
... For an SDI command to be successfully received by the AP3154A, all SDI timing specifications should be satisfied. When no command is being sent the SDI pin should be held high. If the SDI pin goes low and stays low for a time length of between TSLO(min) and TSLO(max) and then goes high and stays hig ...
... For an SDI command to be successfully received by the AP3154A, all SDI timing specifications should be satisfied. When no command is being sent the SDI pin should be held high. If the SDI pin goes low and stays low for a time length of between TSLO(min) and TSLO(max) and then goes high and stays hig ...
CHAPTER 4: CAPACITANCE AND DIELECTRICS WHAT IS CAPACITOR?
... electric potential energy stored in a charged capacitor is just equal to the amount of the work required to charge it- that is, to separate opposite charges and place them on the different conductors. When the capacitor is discharged, this stored energy is recovered as work done by electrical forces ...
... electric potential energy stored in a charged capacitor is just equal to the amount of the work required to charge it- that is, to separate opposite charges and place them on the different conductors. When the capacitor is discharged, this stored energy is recovered as work done by electrical forces ...
september - Linear Technology
... Tool Designs It for You” above). Either way, be sure to call about the available demo board, which you can use to quickly evaluate any configuration. Figures 1 and 2 show a generic LTC2928 application and waveforms for the discussion and calculations ...
... Tool Designs It for You” above). Either way, be sure to call about the available demo board, which you can use to quickly evaluate any configuration. Figures 1 and 2 show a generic LTC2928 application and waveforms for the discussion and calculations ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.