FXLP4555MPX Datasheet
... between the Baseband (BB) Processor (1.65V – 5.5V) and the SIM card (1.8V or 3V). The RESET and CLOCK level shifters are uni-directional (from BB to SIM). The bidirectional I/O line automatically adapts the voltage difference between the baseband and the SIM card in both directions. In addition, wit ...
... between the Baseband (BB) Processor (1.65V – 5.5V) and the SIM card (1.8V or 3V). The RESET and CLOCK level shifters are uni-directional (from BB to SIM). The bidirectional I/O line automatically adapts the voltage difference between the baseband and the SIM card in both directions. In addition, wit ...
tl7705 - supply voltage supervisors
... The TL77xxA family of monolithic integrated RESIN 17 SENSE ...
... The TL77xxA family of monolithic integrated RESIN 17 SENSE ...
9908-TE - MPJA.COM
... 4. Remove power from the circuit under test. Then open up the circuit at the point where you wish to measure the current. 5. Touch the black test lead tip to the negative side of the circuit. Touch the red test lead tip to the positive side of the circuit. 6. Apply power to the circuit. 7. The value ...
... 4. Remove power from the circuit under test. Then open up the circuit at the point where you wish to measure the current. 5. Touch the black test lead tip to the negative side of the circuit. Touch the red test lead tip to the positive side of the circuit. 6. Apply power to the circuit. 7. The value ...
The circuit current
... All materials conduct electricity. The materials that conduct electricity well are called conductors and those that are poor conductors are called insulators. Metals are good conductors while rubber and glass are good insulators. Resistance is therefore a measure of how much voltage is required to l ...
... All materials conduct electricity. The materials that conduct electricity well are called conductors and those that are poor conductors are called insulators. Metals are good conductors while rubber and glass are good insulators. Resistance is therefore a measure of how much voltage is required to l ...
PSCAD/EMTDC Simulation of Powe
... waveform distortion, dc offset, noise, notches etc. voltage sag is most important [1]. Severe voltage sag may cause tripping of equipment which will result in stopping of process which in tern leads to financial losses. Study says that voltage sags are severe than interruptions as there frequency in ...
... waveform distortion, dc offset, noise, notches etc. voltage sag is most important [1]. Severe voltage sag may cause tripping of equipment which will result in stopping of process which in tern leads to financial losses. Study says that voltage sags are severe than interruptions as there frequency in ...
Overcurrent and Distance Relays
... This product is in conformity with the directives of the Council of the European Communities on the approximation of the laws of the Member States relating to the electromagnetic compatibility (EMC Council Directive 89/336/EEC) and concerning electrical equipment for use within specified voltage lim ...
... This product is in conformity with the directives of the Council of the European Communities on the approximation of the laws of the Member States relating to the electromagnetic compatibility (EMC Council Directive 89/336/EEC) and concerning electrical equipment for use within specified voltage lim ...
LM833-N 数据资料 dataSheet 下载
... functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaran ...
... functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaran ...
2008 IEEE. Personal use of this material is
... studied, an engineer can choose the most appropriate combination of capacitor banks. For example, it is intuitive that a disand voltage, tribution system with a high suitability of having a low cost is highly desirable. Fuzzy rules are defined to and may determine the suitability of each chromosome ...
... studied, an engineer can choose the most appropriate combination of capacitor banks. For example, it is intuitive that a disand voltage, tribution system with a high suitability of having a low cost is highly desirable. Fuzzy rules are defined to and may determine the suitability of each chromosome ...
TPS70302 数据资料 dataSheet 下载
... a high signal to EN (enable) shuts down both regulators, reducing the input current to 1 mA at TJ = +25°C. The device is enabled when the EN pin is connected to a low-level input voltage. The output voltages of the two regulators are sensed at the VSENSE1 and VSENSE2 pins respectively. The input sig ...
... a high signal to EN (enable) shuts down both regulators, reducing the input current to 1 mA at TJ = +25°C. The device is enabled when the EN pin is connected to a low-level input voltage. The output voltages of the two regulators are sensed at the VSENSE1 and VSENSE2 pins respectively. The input sig ...
MAX1765 800mA, Low-Noise, Step-Up DC-DC Converter with 500mA Linear Regulator General Description
... The MAX1765 uses a synchronous-rectified pulsewidth-modulation (PWM) boost topology to generate 2.5V to 5.5V outputs from a wide range of input sources, such as one to three alkaline or NiCd/NiMH cells or a single lithium-ion (Li+) cell. Maxim's proprietary architecture significantly improves effici ...
... The MAX1765 uses a synchronous-rectified pulsewidth-modulation (PWM) boost topology to generate 2.5V to 5.5V outputs from a wide range of input sources, such as one to three alkaline or NiCd/NiMH cells or a single lithium-ion (Li+) cell. Maxim's proprietary architecture significantly improves effici ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.