AAT2605 数据资料DataSheet下载
... For proper load voltage regulation and operational stability, a capacitor is required between pins VOUT and GND. The COUT capacitor connection to the LDO regulator ground pin should be made as direct as practically possible for maximum device performance. The AAT2605's LDO regulators have been speci ...
... For proper load voltage regulation and operational stability, a capacitor is required between pins VOUT and GND. The COUT capacitor connection to the LDO regulator ground pin should be made as direct as practically possible for maximum device performance. The AAT2605's LDO regulators have been speci ...
MAX3430 ±80V Fault-Protected, Fail-Safe, 1/4-Unit Load, +3.3V RS-485 Transceiver General Description
... industrial network applications often experience voltage faults resulting from transients that exceed the -7V to +12V range specified in the EIA/TIA-485 standard. In these applications, ordinary RS-485 devices (typical absolute maximum ratings -8V to +12.5V) require costly external protection device ...
... industrial network applications often experience voltage faults resulting from transients that exceed the -7V to +12V range specified in the EIA/TIA-485 standard. In these applications, ordinary RS-485 devices (typical absolute maximum ratings -8V to +12.5V) require costly external protection device ...
LTM8023 - 2A, 36V DC/DC Step-Down uModule Regulator
... DC output current with only bulk external input and output capacitors. This module provides a precisely regulated output voltage programmable via one external resistor from 0.8VDC to 10VDC. The input voltage range is 3.6V to 36V. Given that the LTM8023 is a step-down converter, make sure that the in ...
... DC output current with only bulk external input and output capacitors. This module provides a precisely regulated output voltage programmable via one external resistor from 0.8VDC to 10VDC. The input voltage range is 3.6V to 36V. Given that the LTM8023 is a step-down converter, make sure that the in ...
pspice - MavDISK
... Figure 10: Using Voltage Markers to show the simulation result of V(out) and V(in) 3. Go to back to PSpice. You will notice that the waveforms will appear. 4. You can add a second Y Axis and use this to display e.g. the current in Resistor R2, as shown below. Go to PLOT/Add Y Axis. Next, add the tra ...
... Figure 10: Using Voltage Markers to show the simulation result of V(out) and V(in) 3. Go to back to PSpice. You will notice that the waveforms will appear. 4. You can add a second Y Axis and use this to display e.g. the current in Resistor R2, as shown below. Go to PLOT/Add Y Axis. Next, add the tra ...
Singh2013-StressAnalysis-MEMS.pdf
... dielectric material is used on top of the signal line. The characteristics of the switch are mainly governed by the design of the membrane. To lower the pull-down voltage, meanders are included on the sides of the membrane, which helps to lower the spring constant of the membrane. The membrane is th ...
... dielectric material is used on top of the signal line. The characteristics of the switch are mainly governed by the design of the membrane. To lower the pull-down voltage, meanders are included on the sides of the membrane, which helps to lower the spring constant of the membrane. The membrane is th ...
TSC2046 数据资料 dataSheet 下载
... a low-voltage I/O interface from 1.5V to 5.25V. The TSC2046 is 100% pin-compatible with the existing ADS7846, and will drop into the same socket. This allows for easy upgrade of current applications to the new version. The TSC2046 also has an on-chip 2.5V reference that can be used for the auxiliary ...
... a low-voltage I/O interface from 1.5V to 5.25V. The TSC2046 is 100% pin-compatible with the existing ADS7846, and will drop into the same socket. This allows for easy upgrade of current applications to the new version. The TSC2046 also has an on-chip 2.5V reference that can be used for the auxiliary ...
pspice - Penn Engineering - University of Pennsylvania
... Figure 10: Using Voltage Markers to show the simulation result of V(out) and V(in) 3. Go to back to PSpice. You will notice that the waveforms will appear. 4. You can add a second Y Axis and use this to display e.g. the current in Resistor R2, as shown below. Go to PLOT/Add Y Axis. Next, add the tra ...
... Figure 10: Using Voltage Markers to show the simulation result of V(out) and V(in) 3. Go to back to PSpice. You will notice that the waveforms will appear. 4. You can add a second Y Axis and use this to display e.g. the current in Resistor R2, as shown below. Go to PLOT/Add Y Axis. Next, add the tra ...
High Frequency, High Precision CMOS Half-Wave Rectifier Montree Kumngern and Kobchai Dejhan
... tests are shown in figures 2 and 3, respectively. As is evident, satisfied half-wave rectified signals are produced at all two frequencies. This is as a direct result of the operation of the class-AB and the fast action of the voltage-to-current converter using the CCII. The amplitude errors between ...
... tests are shown in figures 2 and 3, respectively. As is evident, satisfied half-wave rectified signals are produced at all two frequencies. This is as a direct result of the operation of the class-AB and the fast action of the voltage-to-current converter using the CCII. The amplitude errors between ...
PDF document - eetasia.com
... system. When the main converter output voltage reaches a certain preset level, the power-on signal will go high and wake up the microcontroller after a user-defined time delay. The time delay is adjustable by a external capacitor. Whereas, the lowbattery detection is implemented by comparing the bat ...
... system. When the main converter output voltage reaches a certain preset level, the power-on signal will go high and wake up the microcontroller after a user-defined time delay. The time delay is adjustable by a external capacitor. Whereas, the lowbattery detection is implemented by comparing the bat ...
Document
... Equivalent Circuit • If the network contains independent and dependent sources, turn off the independent sources, leave the dependent sources intact, apply a test current source to the terminals and determine the resulting voltage at the terminals. The Thevenin/Norton resistance is RTH = VTest/ITest ...
... Equivalent Circuit • If the network contains independent and dependent sources, turn off the independent sources, leave the dependent sources intact, apply a test current source to the terminals and determine the resulting voltage at the terminals. The Thevenin/Norton resistance is RTH = VTest/ITest ...
TSUS6402 Datasheet
... statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or ...
... statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or ...
DATA SHEET PHE13009 Silicon Diffused Power Transistor
... party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not ...
... party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.