MAX3232E-Q1 数据资料 dataSheet 下载
... only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to network GND. ...
... only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to network GND. ...
FSA66 Low-Voltage UHS Single SPST Normally Open Analog Switch FSA66 Low-V
... ■ Rail-to-rail signal handling ■ 5Ω switch connection between two ports ■ Minimal propagation delay through the switch ...
... ■ Rail-to-rail signal handling ■ 5Ω switch connection between two ports ■ Minimal propagation delay through the switch ...
LT5506
... drop in IIP3. Moreover, the IIP2 of the circuit is also reduced which can lead to a higher second order harmonic contribution. The circuit can be driven single ended, but this is not recommended because it leads to a 3dB drop in gain and a considerable increase in IM5 and IM7 components. The single- ...
... drop in IIP3. Moreover, the IIP2 of the circuit is also reduced which can lead to a higher second order harmonic contribution. The circuit can be driven single ended, but this is not recommended because it leads to a 3dB drop in gain and a considerable increase in IM5 and IM7 components. The single- ...
Reduced Voltage Starters Type S
... Part winding starters can only be used with part winding motors which have two sets of identical windings, intended to be operated in parallel. During a part winding start, only one winding is energized, reducing the inrush current to 60-70% (depending on the motor design) and starting torque to 50% ...
... Part winding starters can only be used with part winding motors which have two sets of identical windings, intended to be operated in parallel. During a part winding start, only one winding is energized, reducing the inrush current to 60-70% (depending on the motor design) and starting torque to 50% ...
OPA3684 Low-Power, Triple Current-Feedback OPERATIONAL AMPLIFIER With Disable FEATURES
... wideband, current-feedback (CFB) amplifiers. This CFBPLUS amplifier among the first to use an internally closed-loop input buffer stage that enhances performance significantly over earlier lowpower CFB amplifiers. While retaining the benefits of very low power operation, this new architecture provid ...
... wideband, current-feedback (CFB) amplifiers. This CFBPLUS amplifier among the first to use an internally closed-loop input buffer stage that enhances performance significantly over earlier lowpower CFB amplifiers. While retaining the benefits of very low power operation, this new architecture provid ...
2.3 GHz to 2.4 GHz WiMAX Power Amplifier ADL5570
... This power supply pin should be connected to the supply via a choke circuit (see Figure 10). Connected to Ground. When STBY is low (0 V), the device operates in transmit mode. When the radio is receiving data, STBY can be taken high (2.5 V), reducing supply current to 1 mA. Connect to Power Supply. ...
... This power supply pin should be connected to the supply via a choke circuit (see Figure 10). Connected to Ground. When STBY is low (0 V), the device operates in transmit mode. When the radio is receiving data, STBY can be taken high (2.5 V), reducing supply current to 1 mA. Connect to Power Supply. ...
Reactive Sputtering Using a Dual
... previously. The discharge between the anodes is not selfsupported but is supported by the magnetron discharge that creates a certain plasma density near anode #2. The current through anode #2 is in the range of mA, much less then the current through the magnetron, and increases with voltage. The hig ...
... previously. The discharge between the anodes is not selfsupported but is supported by the magnetron discharge that creates a certain plasma density near anode #2. The current through anode #2 is in the range of mA, much less then the current through the magnetron, and increases with voltage. The hig ...
Dynamic Logic Circuits
... – During pre-charge, both Vout1 and Vout2 are pre-charged to Vdd – When φ goes high to begin evaluate, all inputs at stage 1 require some finite time to resolve, but during this time charge may erroneously be discharged from Vout2 • e.g. assume that eventually the 1st stage NMOS logic tree conducts ...
... – During pre-charge, both Vout1 and Vout2 are pre-charged to Vdd – When φ goes high to begin evaluate, all inputs at stage 1 require some finite time to resolve, but during this time charge may erroneously be discharged from Vout2 • e.g. assume that eventually the 1st stage NMOS logic tree conducts ...
B. Direct current
... • Electrical current is the flow of electrons. – Electrons are negatively-charged atomic particles, usually surrounding an atom’s positively-charged nucleus of protons (positive) and neutrons (neutral – no charge) – Electrons move in response to an electromotive force and can move independently of a ...
... • Electrical current is the flow of electrons. – Electrons are negatively-charged atomic particles, usually surrounding an atom’s positively-charged nucleus of protons (positive) and neutrons (neutral – no charge) – Electrons move in response to an electromotive force and can move independently of a ...
TPS60300 数据资料 dataSheet 下载
... absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Input voltage, VI (IN to GND) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 2 V Output voltage, VO (OUT1,OUT2, EN, PG to GND) (see Note 1) . . . . ...
... absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Input voltage, VI (IN to GND) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 2 V Output voltage, VO (OUT1,OUT2, EN, PG to GND) (see Note 1) . . . . ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.