D/A Converter
... Usually specified as the conversion rate or sampling rate. It is the rate at which the input register is cycled through in the DAC. ...
... Usually specified as the conversion rate or sampling rate. It is the rate at which the input register is cycled through in the DAC. ...
RF5388 3.3V, DUAL-BAND FRONT-END MODULE Features
... The RF5388 is a single-chip dual-band integrated front-end module (FEM) for high performance WiFi applications in the 2.5GHz and 5GHz ISM bands. The RF5388 addresses the need for aggressive size reduction for a typical 802.11a/b/g RF front-end design and greatly reduces the number of components outs ...
... The RF5388 is a single-chip dual-band integrated front-end module (FEM) for high performance WiFi applications in the 2.5GHz and 5GHz ISM bands. The RF5388 addresses the need for aggressive size reduction for a typical 802.11a/b/g RF front-end design and greatly reduces the number of components outs ...
AP3156
... TSLO(min) and TSLO(max) and then goes High and stays High for the length between TSHI(min) and TSHI(max), one falling edge is registered by the AP3156. The total number of falling edges registered before the SDI pin is held High for longer than the maximum separation time TSEP(max) identifies the co ...
... TSLO(min) and TSLO(max) and then goes High and stays High for the length between TSHI(min) and TSHI(max), one falling edge is registered by the AP3156. The total number of falling edges registered before the SDI pin is held High for longer than the maximum separation time TSEP(max) identifies the co ...
Another Intro to EIS
... The Zn Air battery: An electrochemical cell The cathode reaction is at equilibrium if there is no power supply connected to the circuit. It can do this because each atom or ion has enough energy to undergo the reaction in either direction; there is nothing stopping it being at equilibrium. The anod ...
... The Zn Air battery: An electrochemical cell The cathode reaction is at equilibrium if there is no power supply connected to the circuit. It can do this because each atom or ion has enough energy to undergo the reaction in either direction; there is nothing stopping it being at equilibrium. The anod ...
AH5792 SINGLE PHASE HALL EFFECT LATCH SMART FAN MOTOR CONTROLLER
... diode D1 between power supply and Vdd terminal. In such case of using reverse power protection diode D1 because of there is no way to return current to power supply, please take necessary measures like below. - Connect Dz (Zener diode) between Vdd and Vss terminal, not to exceed the absolute maximum ...
... diode D1 between power supply and Vdd terminal. In such case of using reverse power protection diode D1 because of there is no way to return current to power supply, please take necessary measures like below. - Connect Dz (Zener diode) between Vdd and Vss terminal, not to exceed the absolute maximum ...
LT1719 - 4.5ns Single/Dual Supply 3V/5V Comparator with Rail-to-Rail Output
... Note 7: The LT1719S6 power supply rejection ratio is measured with VCM = 1V and is defined as the change in offset voltage measured from V+ = 2.7V to V+ = 6V, divided by 3.3V. Note 8: Because of internal hysteresis, there is no small-signal region in which to measure gain. Proper operation of interna ...
... Note 7: The LT1719S6 power supply rejection ratio is measured with VCM = 1V and is defined as the change in offset voltage measured from V+ = 2.7V to V+ = 6V, divided by 3.3V. Note 8: Because of internal hysteresis, there is no small-signal region in which to measure gain. Proper operation of interna ...
LT1970 - 500mA Power Op Amp with Adjustable Precision Current Limit
... VEE or may be smaller in magnitude. Only output stage current flows out of V –, all other current flows out of VEE. V – may be used to drive the base/gate of an external power device to boost the amplifier’s output current to levels above the rated 500mA of the on-chip output devices. Unless used to dr ...
... VEE or may be smaller in magnitude. Only output stage current flows out of V –, all other current flows out of VEE. V – may be used to drive the base/gate of an external power device to boost the amplifier’s output current to levels above the rated 500mA of the on-chip output devices. Unless used to dr ...
LM111, LM211, LM311 Differential Comparators
... 8 Detailed Description 8.1 Overview The LM111, LM211 and LM311 are voltage comparators that have input currents nearly a thousand times lower than legacy standard devices. They are also designed to operate over a wider range of supply voltages: from standard ±15V op amp supplies down to the single 5 ...
... 8 Detailed Description 8.1 Overview The LM111, LM211 and LM311 are voltage comparators that have input currents nearly a thousand times lower than legacy standard devices. They are also designed to operate over a wider range of supply voltages: from standard ±15V op amp supplies down to the single 5 ...
chapter three power flow and security assessment
... system voltage as a result of blackout of some parts or entire system [67]. Where there are several main blackouts that have occurred in last half century, the first main blackout was on November 9th 1965 in United States. And this blackout happened because of heavy loading conditions which led to t ...
... system voltage as a result of blackout of some parts or entire system [67]. Where there are several main blackouts that have occurred in last half century, the first main blackout was on November 9th 1965 in United States. And this blackout happened because of heavy loading conditions which led to t ...
Old Company Name in Catalogs and Other Documents
... possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or ...
... possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or ...
First Order And Second Order Response Of RL And
... When computing the step and natural responses of circuits, it may help to follow these steps: 1. Identify the variable of interest for the circuit. For RC circuits, it is most convenient to choose the capacitive voltage, for RL circuits, it is best to choose the inductive current. 2. Determine the ...
... When computing the step and natural responses of circuits, it may help to follow these steps: 1. Identify the variable of interest for the circuit. For RC circuits, it is most convenient to choose the capacitive voltage, for RL circuits, it is best to choose the inductive current. 2. Determine the ...
MAX1385EVC16-MAX1385EVKIT.pdf
... / Lines that begin with a forward slash \ Lines that begin with a backslash ...
... / Lines that begin with a forward slash \ Lines that begin with a backslash ...
AD7836 数据手册DataSheet 下载
... Bringing the CLR line low switches all the signal outputs, VOUTA to VOUTD, to the voltage level on the DUTGND pin. When CLR signal is brought back high the output voltages from the DACs will reflect the data stored in the relevant DAC registers. ...
... Bringing the CLR line low switches all the signal outputs, VOUTA to VOUTD, to the voltage level on the DUTGND pin. When CLR signal is brought back high the output voltages from the DACs will reflect the data stored in the relevant DAC registers. ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.