Ultra-low Jitter LVCMOS Fanout Buffer/Level Translator w/ Universal
... parameter. Nowhere in the IC does this signal exist with respect to ground, it only exists in reference to its differential pair. VSS can be measured directly by oscilloscopes with floating references, otherwise this value can be calculated as twice the value of VOD as described in the first section ...
... parameter. Nowhere in the IC does this signal exist with respect to ground, it only exists in reference to its differential pair. VSS can be measured directly by oscilloscopes with floating references, otherwise this value can be calculated as twice the value of VOD as described in the first section ...
Determination and Application of Practical Relaying
... maximum power transfer to that of only the line inductive reactance as described in R1.3. The relay settings must be evaluated against 115% of the highest series capacitor emergency current rating and the maximum power transfer calculated in R1.3 using the full line inductive Determination and Appli ...
... maximum power transfer to that of only the line inductive reactance as described in R1.3. The relay settings must be evaluated against 115% of the highest series capacitor emergency current rating and the maximum power transfer calculated in R1.3 using the full line inductive Determination and Appli ...
LT1994
... may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The inputs are protected by a pair of back-to-back diodes. If the differential input voltage exceeds 1V, the input current should be li ...
... may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The inputs are protected by a pair of back-to-back diodes. If the differential input voltage exceeds 1V, the input current should be li ...
THS7315 数据资料 dataSheet 下载
... INPUT OVERVOLTAGE PROTECTION The THS7315 is built using a very high-speed complementary bipolar and CMOS process. The internal junction breakdown voltages are relatively low for these very small geometry devices. These breakdowns are reflected in the Absolute Maximum Ratings table. All input and out ...
... INPUT OVERVOLTAGE PROTECTION The THS7315 is built using a very high-speed complementary bipolar and CMOS process. The internal junction breakdown voltages are relatively low for these very small geometry devices. These breakdowns are reflected in the Absolute Maximum Ratings table. All input and out ...
STC Manual
... allowing the butterfly to be manually pushed to its closed position to see the current voltage from the two pots on the top left of the screen. Note these values. Open the butterfly to its fully open position and note the voltages again. Be aware that most butterflies will travel further than 90 deg ...
... allowing the butterfly to be manually pushed to its closed position to see the current voltage from the two pots on the top left of the screen. Note these values. Open the butterfly to its fully open position and note the voltages again. Be aware that most butterflies will travel further than 90 deg ...
Aalborg Universitet Controlled Single Phase Islanded Microgrids
... where P is the real power output of the inverter; Q is the reactive power output of the inverter; Gp (s) = smd + m and Gq (s) = snd + n are the real and reactive power droop controllers where m and n are the P − ω and Q − E droop gains and md and nd are the P − ω and Q − E derivative gains. PD contr ...
... where P is the real power output of the inverter; Q is the reactive power output of the inverter; Gp (s) = smd + m and Gq (s) = snd + n are the real and reactive power droop controllers where m and n are the P − ω and Q − E droop gains and md and nd are the P − ω and Q − E derivative gains. PD contr ...
LP5912 500-mA Low-Noise, Low-IQ LDO (Rev. D)
... All voltages are with respect to the device GND pin, unless otherwise stated. Minimum and maximum limits are ensured through test, design, or statistical correlation over the junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Typical values represent the most likely paramet ...
... All voltages are with respect to the device GND pin, unless otherwise stated. Minimum and maximum limits are ensured through test, design, or statistical correlation over the junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Typical values represent the most likely paramet ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.