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Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling.
Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling.

... We can use this equation to compute the signal power delivered to the antenna (with an input resistance of R) when driven by the Class C power amplifier in the NorCal 40A. Nice! So how can we increase the ac output power P? (This is important, after all, since this will be the power delivered to our ...
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SP540-X - Solid State Optronics

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... o I2= V/R=16/6=2.67A, Now using the other Kirchoff Law (Junction rule) one can find I1 o It= I1 + I2 , 8= I1 + 2.6667 ∴ Ι = 5.33 A, remember to carry extra sig figs ...
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... 6. The total power in a parallel circuit is the sum of the individual powers or: PT = P1 + P2 + etc. Where: PT is the total power, P1 is the power used by the first resistor, etc. 7. An open in the main line of a parallel circuit results in zero current through all the individual branches. An open i ...
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... The birds are safe because they are not grounded. Both of their legs are essentially at the same voltage (the only difference being due to the small resistance of the wire between their feet), and so there is no current flow through their bodies since the potential difference across their legs is ve ...
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... phase AC source results in a lagging current with respect to voltage. If R & L are connected in series, the phasor sum of the voltages across L and R equals the source voltage. In contrast if they are connected in parallel the phasor sum of the currents drawn by R & L equals the source current. Powe ...
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... Let us redesign the four-resistor bias network in the previous example to increase the current while keeping VDS approximately the same: the desired Qpoint will be (100µA,6V ) . We can see that the sum of ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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