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June 1999 - Vicphysics
June 1999 - Vicphysics

... 2.5 x 10-4 W/m2 Inverse Square Law. Distance increases by 4, so Intensity decreases by 1/16 (1). Intensity = (1/16) x 4.0 x 10-3. A, B or C The reflected sound adds to the original sound because the reflection from the surface is irregular producing a random phase in the reflected wave. B could be a ...
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... As was also mentioned in Lecture 30, large-valued resistors and capacitors are not often used in these IC environments. Instead, active loads are incorporated using MOSFETs as loads. In the amplifier circuits shown above, the active loads are actually the nonideal current sources. [Also notice that ...
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... its capacitance is decreased and therefore it can respond 1M faster. The speed of the transimpedance amplifier to the right will be faster than the one above. Note: In this case the output will be positive since the polarity of the diode is Vout the opposite of the above circuit. The diode capacitan ...
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< 1 ... 1180 1181 1182 1183 1184 1185 1186 1187 1188 ... 1285 >

Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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