CD54HC21/3A CD54HCT21/3A Dual 4-Input AND Gate Functional Diagram
... The CD54HC21/3A and CD54HCT21/3A logic gates utilize silicon-gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The CD54HCT logic family is functionally as ...
... The CD54HC21/3A and CD54HCT21/3A logic gates utilize silicon-gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The CD54HCT logic family is functionally as ...
Solid State Timers and Controllers Solid State DC Flasher
... requires the load circuit to be ON for 60 milliseconds and OFF for 60 milliseconds. (Remember - the ON and OFF times will essentially be equal due to the 50% duty cycle specification inherent in the model 423) The voltage across the load circuit would look something this: ON Time = .06 Second (60 mi ...
... requires the load circuit to be ON for 60 milliseconds and OFF for 60 milliseconds. (Remember - the ON and OFF times will essentially be equal due to the 50% duty cycle specification inherent in the model 423) The voltage across the load circuit would look something this: ON Time = .06 Second (60 mi ...
Ohm's Law Lab
... 3. Use the multi-meter to measure and record the value of the resistor. Is the resistor with in the tolerance range? (Yes/No) 4. For the calculated value of each resistor, use Ohm’s Law to calculate the current flow in each resistor when the voltage is 1.5 VDC and 3 VDC. Record in Data Table II. 5. ...
... 3. Use the multi-meter to measure and record the value of the resistor. Is the resistor with in the tolerance range? (Yes/No) 4. For the calculated value of each resistor, use Ohm’s Law to calculate the current flow in each resistor when the voltage is 1.5 VDC and 3 VDC. Record in Data Table II. 5. ...
File
... Every conversion of energy from one form to another can be related to this equation. In electric circuits the effect we are trying to establish is the flow of charge, or current. The potential difference, or voltage between two points is the cause (“pressure”), and resistance is the opposition enc ...
... Every conversion of energy from one form to another can be related to this equation. In electric circuits the effect we are trying to establish is the flow of charge, or current. The potential difference, or voltage between two points is the cause (“pressure”), and resistance is the opposition enc ...
Examples #4 - ECE at Utah
... 4.. Design the circuit shown below to obtain a dc voltage of +2V aatt each of the drains of Q1 and Q2 when VG1=VG2=0V. Operate allll transistors at Vov=0.2V and assume that for the process technology in which the th circuit is fabricated, Vtn=0.5V and kn’=250µA/V2. Neglect channel-length length modu ...
... 4.. Design the circuit shown below to obtain a dc voltage of +2V aatt each of the drains of Q1 and Q2 when VG1=VG2=0V. Operate allll transistors at Vov=0.2V and assume that for the process technology in which the th circuit is fabricated, Vtn=0.5V and kn’=250µA/V2. Neglect channel-length length modu ...
AN1052 - Diodes Incorporated
... For the noise caused by transformer, it is mainly due to unstable loop and burst-mode frequency as shown in Figure 14. There must be audible noise frequency (normally from 2kHz to 20kHz) in the unstable loop. The noise from unstable loop can be eliminated by adjusting the loop compensation. For burs ...
... For the noise caused by transformer, it is mainly due to unstable loop and burst-mode frequency as shown in Figure 14. There must be audible noise frequency (normally from 2kHz to 20kHz) in the unstable loop. The noise from unstable loop can be eliminated by adjusting the loop compensation. For burs ...
IALP 2011 – Analog Electronics
... The above exercise was done with DC voltages. 'DC' stands for 'direct current'. What this confusing name means is constant voltage and current. In other words, 'not changing with ...
... The above exercise was done with DC voltages. 'DC' stands for 'direct current'. What this confusing name means is constant voltage and current. In other words, 'not changing with ...
Current
... total resistance we need to find the area S(x). In order to find the radius of the cone as a function of L we shall use basic geometry and we will come up with the expression: ...
... total resistance we need to find the area S(x). In order to find the radius of the cone as a function of L we shall use basic geometry and we will come up with the expression: ...
2N4401-T Datasheet
... NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. ...
... NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. ...
Two New Digitally Controlled Electronic Loads Offer Remarkable
... MOSFET’s, etc.), and all manner of other power devices (batteries, current and voltage sources, capacitors, etc.) normally requires putting those devices under load. Historically, electronic loads have been implemented as expensive “boxes” with assorted dials, knobs, displays, and unnecessarily high ...
... MOSFET’s, etc.), and all manner of other power devices (batteries, current and voltage sources, capacitors, etc.) normally requires putting those devices under load. Historically, electronic loads have been implemented as expensive “boxes” with assorted dials, knobs, displays, and unnecessarily high ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.