EEEE 482 Lab0_Rev2015_1 - RIT
... (1) a minimum value for magnitude of voltage gain: 20 22 24 26 28 30 [V/V] ( 10%); (note that the actual gain is negative in a common-emitter amplifier — i.e., –20 V/V, etc.); (2) a power supply voltage value: 14 15 16 [V]. The required minimum output swing specification (peak-to-peak amplitude) i ...
... (1) a minimum value for magnitude of voltage gain: 20 22 24 26 28 30 [V/V] ( 10%); (note that the actual gain is negative in a common-emitter amplifier — i.e., –20 V/V, etc.); (2) a power supply voltage value: 14 15 16 [V]. The required minimum output swing specification (peak-to-peak amplitude) i ...
LRC Circuits
... voltages at the same time; use your digital cursors to make the measurement, as the instructor will demonstrate. NOTE: Always remember to keep your function generator and scope grounds at the same point. Also, with circuits of this kind, it is best to make measurements at frequencies that increase i ...
... voltages at the same time; use your digital cursors to make the measurement, as the instructor will demonstrate. NOTE: Always remember to keep your function generator and scope grounds at the same point. Also, with circuits of this kind, it is best to make measurements at frequencies that increase i ...
Safety Switching Devices Basic device for Emergency-Stop
... The Device is a single-channel safety switching device for emergency stop equipment conforming to EN 60204-1, with self-monitoring on each ON-OFF cycle and positively driven relays. The device has two reset inputs, Y2 (without reset monitoring) and Y3 (with reset monitoring). The two relays, K1 and ...
... The Device is a single-channel safety switching device for emergency stop equipment conforming to EN 60204-1, with self-monitoring on each ON-OFF cycle and positively driven relays. The device has two reset inputs, Y2 (without reset monitoring) and Y3 (with reset monitoring). The two relays, K1 and ...
EXPERIMENT: D/A Converter
... board. Connect B3, B2, B1, and B0 to the four right-most toggle switches on the PLDT-3 board. Connect Vin to a variable power supply (0 – 5V) with the voltage set initially to zero. 2. Turn all toggle switches off. Set Vin to some voltage between 0 and 5 volts. Measure this voltage with the multimet ...
... board. Connect B3, B2, B1, and B0 to the four right-most toggle switches on the PLDT-3 board. Connect Vin to a variable power supply (0 – 5V) with the voltage set initially to zero. 2. Turn all toggle switches off. Set Vin to some voltage between 0 and 5 volts. Measure this voltage with the multimet ...
NTUST-EE-2013S
... • The sum of all the voltage drops around a single closed path in a circuit is equal to the total source voltage in that closed path. KVL applies to all circuits, but you must apply it to only one closed path. In a series circuit, this is (of course) the entire circuit. Why does it works for all cir ...
... • The sum of all the voltage drops around a single closed path in a circuit is equal to the total source voltage in that closed path. KVL applies to all circuits, but you must apply it to only one closed path. In a series circuit, this is (of course) the entire circuit. Why does it works for all cir ...
In this new setup, the current flowing across the Pt100/polysilicon...
... a very stable 10 V voltage (±25 mV) was obtained from a precision REF102 voltage reference (Burr-Brown). A 10 kΩ 0.1% precision resistor was then placed in the current path to force a 1 mA current through the sensing element. Instead of monitoring the passing current, the ground source of the voltag ...
... a very stable 10 V voltage (±25 mV) was obtained from a precision REF102 voltage reference (Burr-Brown). A 10 kΩ 0.1% precision resistor was then placed in the current path to force a 1 mA current through the sensing element. Instead of monitoring the passing current, the ground source of the voltag ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.