June 2011 - Vicphysics
... These suggested solutions have been prepared by the AIP (Vic Branch) Education Committee to assist teachers and students when using this exam paper as a revision exercise. The average and maximum scores, and the average as a percentage will be included at the end of the each solution in square brack ...
... These suggested solutions have been prepared by the AIP (Vic Branch) Education Committee to assist teachers and students when using this exam paper as a revision exercise. The average and maximum scores, and the average as a percentage will be included at the end of the each solution in square brack ...
DEHRADUN INSTITUTE OF TECHNOLOGY Assignment:-3 DEPARTMENT OF ELECTRICAL ENGINEERING
... 2. Develop the equivalent circuit of transformer referred to (i) primary side (ii) secondary side. 3. Explain why the rating of a transformer is specified in terms of kVA and why do we prefer to conduct Open Circuit Test on LV side and Short Circuit Test on HV side?. What is voltage regulation? 4. A ...
... 2. Develop the equivalent circuit of transformer referred to (i) primary side (ii) secondary side. 3. Explain why the rating of a transformer is specified in terms of kVA and why do we prefer to conduct Open Circuit Test on LV side and Short Circuit Test on HV side?. What is voltage regulation? 4. A ...
DEPARTMENT OF ENGINEERING
... and the modified nodal method are given. The Thevenin equivalent, source transformations and superposition are studied. Simple models for the voltage amplifier and the operational amplifier are developed. The linear, time-invariant capacitor and inductor are introduced along with a complete treatmen ...
... and the modified nodal method are given. The Thevenin equivalent, source transformations and superposition are studied. Simple models for the voltage amplifier and the operational amplifier are developed. The linear, time-invariant capacitor and inductor are introduced along with a complete treatmen ...
Appnote TLE7184 Power Dissipation.fm
... The formula shown in Chapter 3 are used to create an Excel sheet which allows to calculate the power dissipation of the TLE7184F easily. The total power dissipation is the sum of all components shown in Chapter 3. The maximum chip temperature can be determined by a measurement of the PCB temperature ...
... The formula shown in Chapter 3 are used to create an Excel sheet which allows to calculate the power dissipation of the TLE7184F easily. The total power dissipation is the sum of all components shown in Chapter 3. The maximum chip temperature can be determined by a measurement of the PCB temperature ...
Word - University of California, Berkeley
... rails at VDD and 0) and external load CL. Assuming sufficient time for the load capacitance to fully charge/discharge between transitions, how much energy is consumed charging the load for a pull-up (low to high) transition. How much energy is consumed for a pull-down (high to low) transition? After ...
... rails at VDD and 0) and external load CL. Assuming sufficient time for the load capacitance to fully charge/discharge between transitions, how much energy is consumed charging the load for a pull-up (low to high) transition. How much energy is consumed for a pull-down (high to low) transition? After ...
BD244/ A/B/ C PNP Epitaxial Silicon Transistor
... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ...
... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ...
Lec 11
... tapped transformer, or four diodes in a bridge configuration and any AC source (including a transformer without center tap), are needed. Single semiconductor diodes, double diodes with common cathode or common anode, and four-diode bridges, are manufactured as single components. ...
... tapped transformer, or four diodes in a bridge configuration and any AC source (including a transformer without center tap), are needed. Single semiconductor diodes, double diodes with common cathode or common anode, and four-diode bridges, are manufactured as single components. ...
THE POWERPAL USER MANUAL Instructions
... z Check the output voltage of original charger and select the suitable connector, suitable switch Connecting to Sony PSP z Select barrel connection plug 04-D: 4.0mm*1.7mm z Select 5V voltage switch, then plug the connector ...
... z Check the output voltage of original charger and select the suitable connector, suitable switch Connecting to Sony PSP z Select barrel connection plug 04-D: 4.0mm*1.7mm z Select 5V voltage switch, then plug the connector ...
1n4734
... with a commercial datasheet. Cite your source. Results of the calculations of the VSMIN and VSMAX voltage limits. Put sample calculations in the appendix. Verification of the VSMIN and VSMAX voltage limits from PSpice. ...
... with a commercial datasheet. Cite your source. Results of the calculations of the VSMIN and VSMAX voltage limits. Put sample calculations in the appendix. Verification of the VSMIN and VSMAX voltage limits from PSpice. ...
84` IIB
... A student is now given two light-dependent resistors (LDRs) and a small d.c. buzzer. The buzzer can be connected to the output of the circuit in Figure 9 and emits a loud noise when the output is high but no noise when it is low. The student is asked to add the two LDRs and the buzzer to the circuit ...
... A student is now given two light-dependent resistors (LDRs) and a small d.c. buzzer. The buzzer can be connected to the output of the circuit in Figure 9 and emits a loud noise when the output is high but no noise when it is low. The student is asked to add the two LDRs and the buzzer to the circuit ...
BUL38D
... The BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. ...
... The BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. ...
NC7NZ17 TinyLogic UHS Triple Buffer with Schmitt Trigger Inputs
... The NC7NZ17 is a triple buffer with Schmitt trigger inputs from Fairchild’s Ultra High Speed Series of TinyLogic in the US8 package. The device is fabricated with advanced CMOS technology to achieve ultra high speed with high output drive while maintaining low static power dissipation over a very b ...
... The NC7NZ17 is a triple buffer with Schmitt trigger inputs from Fairchild’s Ultra High Speed Series of TinyLogic in the US8 package. The device is fabricated with advanced CMOS technology to achieve ultra high speed with high output drive while maintaining low static power dissipation over a very b ...
AP_Physics_C_-_ohmslaw_Lab
... The red probe should be use to measure the voltage coming from the POSITIVE end of the battery. The black probe is for the NEGATIVE end. 6. Set your multimeter on the 40/400 mA setting. (This is a milliamp setting, so all values MUST be divided by 1000 to get amps) 7. Remove the wire going from the ...
... The red probe should be use to measure the voltage coming from the POSITIVE end of the battery. The black probe is for the NEGATIVE end. 6. Set your multimeter on the 40/400 mA setting. (This is a milliamp setting, so all values MUST be divided by 1000 to get amps) 7. Remove the wire going from the ...
The RLC Circuit
... 1) Using your measured values of VL , and VR , draw phasor diagrams (consult Fig. 6) for each or your three runs. 2) Draw a table as shown. Quote all physical units. The graphical values are to be measured by ruler and protractor from your phasor diagrams. ...
... 1) Using your measured values of VL , and VR , draw phasor diagrams (consult Fig. 6) for each or your three runs. 2) Draw a table as shown. Quote all physical units. The graphical values are to be measured by ruler and protractor from your phasor diagrams. ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.