Plasma Processes for Printed Circuit Board Manufacturing
... difficulties arise during board manufacturing where the use of traditional processes is limited. Chemical processing with permanganate chemistry is limited due to the inability of the fluid to penetrate the small vias found in multilayer PCBs. In addition, permanganate does not effectively clean the ...
... difficulties arise during board manufacturing where the use of traditional processes is limited. Chemical processing with permanganate chemistry is limited due to the inability of the fluid to penetrate the small vias found in multilayer PCBs. In addition, permanganate does not effectively clean the ...
High Speed MOSFET Circuits Using Advanced Lithography
... 35 to 120 minutes to expose a 6-cm diameter wafer with 1 Am lines with about 400 individual 2mm X 2mm fields. This may be satisfactory for small volume production where flexibility and resolution are paramount. However, for large volume production, such as memory, projection electron beam systems in ...
... 35 to 120 minutes to expose a 6-cm diameter wafer with 1 Am lines with about 400 individual 2mm X 2mm fields. This may be satisfactory for small volume production where flexibility and resolution are paramount. However, for large volume production, such as memory, projection electron beam systems in ...
Plasma Processing of Large Surfaces with Application to SRF Cavity
... technologies are buffered chemical polishing or electro polishing. These technologies are based on the use of hydrogen fluoride (HF) in liquid acid baths, which poses major environmental and personal safety concern. HFfree plasma-based (“dry”) technologies are a viable alternative to wet acid techno ...
... technologies are buffered chemical polishing or electro polishing. These technologies are based on the use of hydrogen fluoride (HF) in liquid acid baths, which poses major environmental and personal safety concern. HFfree plasma-based (“dry”) technologies are a viable alternative to wet acid techno ...
S. Avasthi, S. Lee, Y.-L. Loo, J.C. Sturm, "Role of Majority and Minority Carrier Barriers Silicon/Organic Hybrid Heterojunction Solar Cells," Advanced Materials 23, pp. 5762-5766 (2011)
... devices with thicker P3HT films. The diode saturation current density, extracted from the intercept on the vertical axis from the log(current)–voltage graph, falls from a high of 10−6 A cm−2 for diodes with no P3HT to 3.7 × 10−9 A cm−2 for diodes with P3HT. It is well known that the dark current in a ...
... devices with thicker P3HT films. The diode saturation current density, extracted from the intercept on the vertical axis from the log(current)–voltage graph, falls from a high of 10−6 A cm−2 for diodes with no P3HT to 3.7 × 10−9 A cm−2 for diodes with P3HT. It is well known that the dark current in a ...
Full PDF
... The most advanced examples perform routinely on spacecraft in demanding environments. Composites are made up of individual materials referred to as constituent materials. Aluminium is the most popular matrix for the metal matrix composites (MMCs). The Al alloys are quite attractive due to their low ...
... The most advanced examples perform routinely on spacecraft in demanding environments. Composites are made up of individual materials referred to as constituent materials. Aluminium is the most popular matrix for the metal matrix composites (MMCs). The Al alloys are quite attractive due to their low ...
e-beam
... – An e-beam evaporates material, it get the material so hot it becomes a gas and evaporates. It then travels in a straight line, because it is under vacuum, until it condenses when it strikes a colder surface ...
... – An e-beam evaporates material, it get the material so hot it becomes a gas and evaporates. It then travels in a straight line, because it is under vacuum, until it condenses when it strikes a colder surface ...
HIGH TRANSMISSION SILICON (HiTranTM) FOR INFRARED
... This application note presents the properties of HiTranTM silicon. Emphasis is put on the transmission characteristics of HiTranTM silicon across the infrared band but also the mechanical and thermal characteristics of HiTranTM silicon will be covered. Silicon technology is perhaps the most mature o ...
... This application note presents the properties of HiTranTM silicon. Emphasis is put on the transmission characteristics of HiTranTM silicon across the infrared band but also the mechanical and thermal characteristics of HiTranTM silicon will be covered. Silicon technology is perhaps the most mature o ...
Gas and moisture barrier on bio-based packaging materials
... polymer coated paperboards was studied [3]. For SiO2 depositions a new precursor, bis(diethylamido) silane, was used. Al2O3 and SiO2 layers were then successfully deposited at low temperature on these fiber-based substrates. The positive effect of the corona pre-treatment of the polymer coated board ...
... polymer coated paperboards was studied [3]. For SiO2 depositions a new precursor, bis(diethylamido) silane, was used. Al2O3 and SiO2 layers were then successfully deposited at low temperature on these fiber-based substrates. The positive effect of the corona pre-treatment of the polymer coated board ...
Surface modification of polymers and ceramics induced by excimer
... base radius. We have produced densely packed cones with aspect ratios of >10:1. 3. CERAMICS Ceramic materials are characterised by their hardness, strength, chemical inertness, high temperature and insulation properties which make them difficult to bond and mechanically work. Using incident fluences ...
... base radius. We have produced densely packed cones with aspect ratios of >10:1. 3. CERAMICS Ceramic materials are characterised by their hardness, strength, chemical inertness, high temperature and insulation properties which make them difficult to bond and mechanically work. Using incident fluences ...
NTD_Final_Ch3-1_3-2 DOWNLOAD
... Semiconductors’ intrinsic electrical properties are often permanently modified by doping. The amount of dopant added to an intrinsic semiconductor determines level of conductivity. Silicon is tetravalent and the normal crystalline structure forms covalent bonds with four adjacent atoms as shown in F ...
... Semiconductors’ intrinsic electrical properties are often permanently modified by doping. The amount of dopant added to an intrinsic semiconductor determines level of conductivity. Silicon is tetravalent and the normal crystalline structure forms covalent bonds with four adjacent atoms as shown in F ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... heterogeneous integration of CMOS circuitry and III–V electronic devices, among other applications. Nanometre-scale III–V CMOS transistors pose some unique requirements for heterogeneous integration. One is the need for a very thin buffer structure that converts the silicon lattice constant into the ...
... heterogeneous integration of CMOS circuitry and III–V electronic devices, among other applications. Nanometre-scale III–V CMOS transistors pose some unique requirements for heterogeneous integration. One is the need for a very thin buffer structure that converts the silicon lattice constant into the ...
Topic Contribution to Silicon High Impedance and High Frequency
... it is determined by the material properties and its capacity to absorb, transmit or reflect the microwave signals. At present most of the knowledge of the interaction of microwaves with systems has been obtained on systems with characteristic dimensions on the order or larger than the microwaves wav ...
... it is determined by the material properties and its capacity to absorb, transmit or reflect the microwave signals. At present most of the knowledge of the interaction of microwaves with systems has been obtained on systems with characteristic dimensions on the order or larger than the microwaves wav ...
AN781 - Silicon Labs
... formatted clock. These optional terminations are particularly useful in applications that require both 100 MHz PCIe output clocks, as well as 100 MHz LVDS, LVPECL, or CML output clocks for FPGAs, SGMII, or other chipsets. Rather than using separate clock generators or oscillators to satisfy these sy ...
... formatted clock. These optional terminations are particularly useful in applications that require both 100 MHz PCIe output clocks, as well as 100 MHz LVDS, LVPECL, or CML output clocks for FPGAs, SGMII, or other chipsets. Rather than using separate clock generators or oscillators to satisfy these sy ...
e-beam
... – An e-beam evaporates material, it get the material so hot it becomes a gas and evaporates. It then travels in a straight line, because it is under vacuum, until it condenses when it strikes a colder surface ...
... – An e-beam evaporates material, it get the material so hot it becomes a gas and evaporates. It then travels in a straight line, because it is under vacuum, until it condenses when it strikes a colder surface ...
Low-Temperature Solid-Phase Epitaxy of Defect
... deposition is obtained on the contact window edges. (c) the Al/α-Si bi-layer patterned in 10 µm large island around a 1.5-µm-wide contact window. A poly-silicon deposition on the oxide is obtained and the contact to Si substrate (black region) is not completely filled in. In all cases, the thickness ...
... deposition is obtained on the contact window edges. (c) the Al/α-Si bi-layer patterned in 10 µm large island around a 1.5-µm-wide contact window. A poly-silicon deposition on the oxide is obtained and the contact to Si substrate (black region) is not completely filled in. In all cases, the thickness ...
Copyright © 2006 IEEE Reprinted from Proc IEEE International
... A conductor backed CPW is also difficult to realize using standard metal systems (the thin oxide layer separating ground plane from signal line would lead to an extremely narrow center conductor resulting again in unwanted losses). In [8], it was demonstrated that for inverted microstrip lines highe ...
... A conductor backed CPW is also difficult to realize using standard metal systems (the thin oxide layer separating ground plane from signal line would lead to an extremely narrow center conductor resulting again in unwanted losses). In [8], it was demonstrated that for inverted microstrip lines highe ...
Is Only Full SiC the "Real" SiC?
... raw material is expensive to produce. SiC ingots grow very slowly and have to be formed from the vapour phase. SiC is one of the hardest known materials and the wafers can only be cut and ground using expensive diamond tools. Additionally, the majority of the chips nowadays are still produced on 4 i ...
... raw material is expensive to produce. SiC ingots grow very slowly and have to be formed from the vapour phase. SiC is one of the hardest known materials and the wafers can only be cut and ground using expensive diamond tools. Additionally, the majority of the chips nowadays are still produced on 4 i ...
K. Pangal, S.L. Firebaugh, and J.C. Sturm, "Nonivasive measurement of charging in plasmas using microelectromechanical charge sensing devices," Appl. Phys. Lett. 69, pp. 1471-1473 (1996).
... Hence, various drying methods were attempted, like vacuum drying8 and drying the wafer on a hot plate.10 The second method gave better results. It involved soaking the wafer in pure isopropyl alcohol for 10 min until the alcohol displaced the water underneath the paddles and then evaporating the alc ...
... Hence, various drying methods were attempted, like vacuum drying8 and drying the wafer on a hot plate.10 The second method gave better results. It involved soaking the wafer in pure isopropyl alcohol for 10 min until the alcohol displaced the water underneath the paddles and then evaporating the alc ...
CPU on a Glass Substrate Using CG Silicon TFT
... *1 Development Engineering Department, System-LCD Division I, Mobile Liquid Crystal Display Group *2 System IC Business Promotion Center, Integrated Circuits Group ...
... *1 Development Engineering Department, System-LCD Division I, Mobile Liquid Crystal Display Group *2 System IC Business Promotion Center, Integrated Circuits Group ...
EEE 490 Final Presentation
... • The threshold voltage is measured before the device comes in contact with light, and then after light hits the molecule on the device. • The threshold voltage is different due to the change in surface potential generated by the effect of the light hitting the molecule. ...
... • The threshold voltage is measured before the device comes in contact with light, and then after light hits the molecule on the device. • The threshold voltage is different due to the change in surface potential generated by the effect of the light hitting the molecule. ...
CHIPS & NANOTECHNOLOGY - University at Buffalo
... of power consumption on a chip. This is especially beneficial for battery-powered devices, like laptops. In addition, Intel now has an ultra-low-power 65nm process technology under development that will deliver power savings on mobile platforms and small-form-factor devices. This process addresses t ...
... of power consumption on a chip. This is especially beneficial for battery-powered devices, like laptops. In addition, Intel now has an ultra-low-power 65nm process technology under development that will deliver power savings on mobile platforms and small-form-factor devices. This process addresses t ...
Outstanding properties of Silicon Carbide
... As a result, a beta-SiC is obtained. This polytype of SiC is almost fully dense and has very fine columnar grains. Beta-SiC is then deposited on a graphite or SiC bulk material during “encapsulating” process. This technique allows the fabrication of ultra-low scatter surfaces up to 2 A rms. Moreover ...
... As a result, a beta-SiC is obtained. This polytype of SiC is almost fully dense and has very fine columnar grains. Beta-SiC is then deposited on a graphite or SiC bulk material during “encapsulating” process. This technique allows the fabrication of ultra-low scatter surfaces up to 2 A rms. Moreover ...
Physical Design
... • Make 25 µm bond wires no shorter than 1.0 mm and no longer than 3.5 mm. • Avoid downbonds, groundbonds, and double bonds. • Respect a minimum angle of 45 between bond wires and chip edge. • Make all bond areas square with a minimum overglass opening of 75 µm by 75 ...
... • Make 25 µm bond wires no shorter than 1.0 mm and no longer than 3.5 mm. • Avoid downbonds, groundbonds, and double bonds. • Respect a minimum angle of 45 between bond wires and chip edge. • Make all bond areas square with a minimum overglass opening of 75 µm by 75 ...
View File
... – Minimum size is 4l / 2l, sometimes called 1 unit – In f = 0.6 mm process, this is 1.2 mm wide, 0.6 mm ...
... – Minimum size is 4l / 2l, sometimes called 1 unit – In f = 0.6 mm process, this is 1.2 mm wide, 0.6 mm ...
PowerPoint 簡報 - National Cheng Kung University
... Advanced Ceramics • Advanced ceramic materials have been developed over the past half century • Applied as thermal barrier coatings to protect metal structures, wearing surfaces, or as integral components by themselves. • Engine applications are very common for this class of material which includes ...
... Advanced Ceramics • Advanced ceramic materials have been developed over the past half century • Applied as thermal barrier coatings to protect metal structures, wearing surfaces, or as integral components by themselves. • Engine applications are very common for this class of material which includes ...
Microelectromechanical systems
Microelectromechanical systems (MEMS) (also written as micro-electro-mechanical, MicroElectroMechanical or microelectronic and microelectromechanical systems and the related micromechatronics) is the technology of very small devices; it merges at the nano-scale into nanoelectromechanical systems (NEMS) and nanotechnology. MEMS are also referred to as micromachines (in Japan), or micro systems technology – MST (in Europe).MEMS are separate and distinct from the hypothetical vision of molecular nanotechnology or molecular electronics. MEMS are made up of components between 1 to 100 micrometres in size (i.e. 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e. 0.02 to 1.0 mm). They usually consist of a central unit that processes data (the microprocessor) and several components that interact with the surroundings such as microsensors. At these size scales, the standard constructs of classical physics are not always useful. Because of the large surface area to volume ratio of MEMS, surface effects such as electrostatics and wetting dominate over volume effects such as inertia or thermal mass.The potential of very small machines was appreciated before the technology existed that could make them (see, for example, Richard Feynman's famous 1959 lecture There's Plenty of Room at the Bottom). MEMS became practical once they could be fabricated using modified semiconductor device fabrication technologies, normally used to make electronics. These include molding and plating, wet etching (KOH, TMAH) and dry etching (RIE and DRIE), electro discharge machining (EDM), and other technologies capable of manufacturing small devices. An early example of a MEMS device is the resonistor – an electromechanical monolithic resonator.