Word
... established, it was discovered that the carriers most often responsible for electric currents, electrons, are negatively charged. Electrons therefore flow in a circuit from negative to positive. ...
... established, it was discovered that the carriers most often responsible for electric currents, electrons, are negatively charged. Electrons therefore flow in a circuit from negative to positive. ...
IGBT and MOSFET Drivers Correctly Calculated
... driver has to be chosen according to the drive power required for a given power module. The drive power is calculated from the gate charge QGate, the switching frequency fIN, and the actual driver output voltage swing ΔVGate: ...
... driver has to be chosen according to the drive power required for a given power module. The drive power is calculated from the gate charge QGate, the switching frequency fIN, and the actual driver output voltage swing ΔVGate: ...
unit iv – stoichiometry 1
... * Chemical Formulas - a series of symbols and numbers used to represent the composition of an element or a compound I. Formulas for Compounds A. Ionic Compounds - represents ratio of cations to anions * remember, ionic compounds don’t form molecules as we think of them * we call “molecules” formula ...
... * Chemical Formulas - a series of symbols and numbers used to represent the composition of an element or a compound I. Formulas for Compounds A. Ionic Compounds - represents ratio of cations to anions * remember, ionic compounds don’t form molecules as we think of them * we call “molecules” formula ...
Calculating molar volume
... When a reaction takes place almost always one of the reactants will be in excess unless exact quantities have been used. The example that follows shows how to work out which reactant is in excess when gases are involved and by how much. Example: Which gas is in excess and by what volume, if 50 cm3 o ...
... When a reaction takes place almost always one of the reactants will be in excess unless exact quantities have been used. The example that follows shows how to work out which reactant is in excess when gases are involved and by how much. Example: Which gas is in excess and by what volume, if 50 cm3 o ...
Adsorption at Solid Surfaces
... lone pairs are strongly held by the highly electronegative halogen atom so any such interaction would be very weak and the thermodynamics lie very heavily in favour of dissociative adsorption [ i.e. D(X-X) + D(M-X2 ) << 2 D(M-X(-) ) ]. Clearly the kinetic barrier to dissociation must also be low or ...
... lone pairs are strongly held by the highly electronegative halogen atom so any such interaction would be very weak and the thermodynamics lie very heavily in favour of dissociative adsorption [ i.e. D(X-X) + D(M-X2 ) << 2 D(M-X(-) ) ]. Clearly the kinetic barrier to dissociation must also be low or ...
Adsorption at Solid Surfaces
... lone pairs are strongly held by the highly electronegative halogen atom so any such interaction would be very weak and the thermodynamics lie very heavily in favour of dissociative adsorption [ i.e. D(X-X) + D(M-X2 ) << 2 D(M-X(-) ) ]. Clearly the kinetic barrier to dissociation must also be low or ...
... lone pairs are strongly held by the highly electronegative halogen atom so any such interaction would be very weak and the thermodynamics lie very heavily in favour of dissociative adsorption [ i.e. D(X-X) + D(M-X2 ) << 2 D(M-X(-) ) ]. Clearly the kinetic barrier to dissociation must also be low or ...
Slide 1
... voltage of 13.478 V. The ADC full scale input voltage is 20 V. Use the successive approximation algorithm given previously to determine the binary value. Assuming that each bit test takes a single clock cycle, determine the maximum conversion time for the ADC if it is clocked at 4.77 MHz. ...
... voltage of 13.478 V. The ADC full scale input voltage is 20 V. Use the successive approximation algorithm given previously to determine the binary value. Assuming that each bit test takes a single clock cycle, determine the maximum conversion time for the ADC if it is clocked at 4.77 MHz. ...
TPS2331 数据资料 dataSheet 下载
... enough to charge TIMER to 0.5 V, the device latches off and pulls FAULT low. In order to turn the device back on, either the enable pin must be toggled or the input power must be cycled. GATE – GATE connects to the gate of the external N-channel MOSFET transistor. When the device is enabled, interna ...
... enough to charge TIMER to 0.5 V, the device latches off and pulls FAULT low. In order to turn the device back on, either the enable pin must be toggled or the input power must be cycled. GATE – GATE connects to the gate of the external N-channel MOSFET transistor. When the device is enabled, interna ...
Electric Potential Energy and Electric Potential
... Electric potential energy is measured in joules. It is a measure of the interaction energy of a charged particle q’ with the source charges producing V. Ue is proportional to the particles charge q’, and the potential V at which it is placed. Note that Ue can be positive, zero, or negative. ...
... Electric potential energy is measured in joules. It is a measure of the interaction energy of a charged particle q’ with the source charges producing V. Ue is proportional to the particles charge q’, and the potential V at which it is placed. Note that Ue can be positive, zero, or negative. ...
MAX8678 White LED Charge Pump with 1.1W Audio Amplifier General Description
... The MAX8678 integrates a charge pump for white lightemitting diodes (LEDs) with an audio loudspeaker amplifier. The high-efficiency, adaptive charge pump drives up to four LEDs with constant current for uniform brightness. The LED current is adjustable from 0.1mA/LED to 24mA/LED in 31 pseudo-logarit ...
... The MAX8678 integrates a charge pump for white lightemitting diodes (LEDs) with an audio loudspeaker amplifier. The high-efficiency, adaptive charge pump drives up to four LEDs with constant current for uniform brightness. The LED current is adjustable from 0.1mA/LED to 24mA/LED in 31 pseudo-logarit ...
MAX5168 32-Channel Sample/Hold Amplifier with a Single Multiplexed Input General Description
... 64 output sample/hold. The upper and lower addressed devices are identified by CONFIG’s logic level. Connect the CONFIG pin of the upper device low, making its SELECT pin active high. Connect the CONFIG pin of the lower device high to make the SELECT pin active low. Figure 4 shows how to configure t ...
... 64 output sample/hold. The upper and lower addressed devices are identified by CONFIG’s logic level. Connect the CONFIG pin of the upper device low, making its SELECT pin active high. Connect the CONFIG pin of the lower device high to make the SELECT pin active low. Figure 4 shows how to configure t ...
Searching for Patterns in Series and Parallel Circuits
... Note: When finding the total potential difference for the entire circuit (∆Vtotal) we are not looking for the sum of all the voltmeter readings. Instead, find the potential difference across the entire circuit. When finding the total current ( Itotal) we are again not looking for the sum of all the ...
... Note: When finding the total potential difference for the entire circuit (∆Vtotal) we are not looking for the sum of all the voltmeter readings. Instead, find the potential difference across the entire circuit. When finding the total current ( Itotal) we are again not looking for the sum of all the ...
M - GZ @ Science Class Online
... a) Write down two columns : Anhydrous salt and Water b) Calculate the mass of each from the data given. > Anhydrous salt = (mass of crucible, lid and MgSO4 after second heating) – (mass of crucible and lid) > Water = (mass of hydrated salt) – (mass of salt calculated) c) Calculate n of each (n=m/M) ...
... a) Write down two columns : Anhydrous salt and Water b) Calculate the mass of each from the data given. > Anhydrous salt = (mass of crucible, lid and MgSO4 after second heating) – (mass of crucible and lid) > Water = (mass of hydrated salt) – (mass of salt calculated) c) Calculate n of each (n=m/M) ...
Growth mechanism of amorphous hydrogenated carbon
... Amorphous hydrogenated carbon (a-C:H) films offer a wide range of applications due to their extraordinary material properties like high hardness, chemical inertness and infrared transparency. The films are usually deposited in low temperature plasmas from a hydrocarbon precursor gas, which is dissoc ...
... Amorphous hydrogenated carbon (a-C:H) films offer a wide range of applications due to their extraordinary material properties like high hardness, chemical inertness and infrared transparency. The films are usually deposited in low temperature plasmas from a hydrocarbon precursor gas, which is dissoc ...
Document
... - Uses microscope allowing you to first position the resist covered wafer below the mask - In “contact” machine, it then clamps resist/wafer tightly against mask - UV light is then projected down through transparent regions of mask onto resist/wafer In “projection” machine, shadow image of mask is d ...
... - Uses microscope allowing you to first position the resist covered wafer below the mask - In “contact” machine, it then clamps resist/wafer tightly against mask - UV light is then projected down through transparent regions of mask onto resist/wafer In “projection” machine, shadow image of mask is d ...
VNI8200XP
... Additional embedded functions are: Loss of GND protection that automatically turns OFF the IC in case of ground pin disconnection, under voltage shutdown with hysteresis, Power Good diagnostic for valid supply voltage range recognition, output enable function for immediate power outputs shutdown and ...
... Additional embedded functions are: Loss of GND protection that automatically turns OFF the IC in case of ground pin disconnection, under voltage shutdown with hysteresis, Power Good diagnostic for valid supply voltage range recognition, output enable function for immediate power outputs shutdown and ...
A functional model of silicon carbide JFET and its
... under development (e.g., MOSFETs, JFETs, BJTs, IGBTs), SiC JFETs have the greatest potential for near-term real world applications. With extensive research and development effort underway, it is anticipated that more SiC JFET will be used in power electronic systems. The biggest barrier of using SiC ...
... under development (e.g., MOSFETs, JFETs, BJTs, IGBTs), SiC JFETs have the greatest potential for near-term real world applications. With extensive research and development effort underway, it is anticipated that more SiC JFET will be used in power electronic systems. The biggest barrier of using SiC ...
Searching for Patterns in Series and Parallel Circuits
... same and the potential difference across the elements is the sum of the potential differences across each element: I1 = I2 = I3 = Itotal ΔV1 + ΔV2 + ΔV3 = ΔVtotal Elements in Parallel: When circuit elements are connected in parallel, the potential difference is the same across each element and the t ...
... same and the potential difference across the elements is the sum of the potential differences across each element: I1 = I2 = I3 = Itotal ΔV1 + ΔV2 + ΔV3 = ΔVtotal Elements in Parallel: When circuit elements are connected in parallel, the potential difference is the same across each element and the t ...
Nanofluidic circuitry
Nanofluidic circuitry is a nanotechnology aiming for control of fluids in nanometer scale. Due to the effect of an electrical double layer within the fluid channel, the behavior of nanofluid is observed to be significantly different compared with its microfluidic counterparts. Its typical characteristic dimensions fall within the range of 1–100 nm. At least one dimension of the structure is in nanoscopic scale. Phenomena of fluids in nano-scale structure are discovered to be of different properties in electrochemistry and fluid dynamics.