Negative Group Velocity - Physics Department, Princeton University
... a common frequency-independent phase ω 0 z(n(ω 0 )/c − 1/vg ) at a given z, as well as a frequency-dependent part ω(z/vg − t). The peak of the pulse occurs when all the frequencydependent phases vanish; the overall frequency-independent phase does not affect the pulse size. Thus, the peak of the puls ...
... a common frequency-independent phase ω 0 z(n(ω 0 )/c − 1/vg ) at a given z, as well as a frequency-dependent part ω(z/vg − t). The peak of the pulse occurs when all the frequencydependent phases vanish; the overall frequency-independent phase does not affect the pulse size. Thus, the peak of the puls ...
Multimode Pumping of Optical Parametric Oscillators
... For a Laguerre-Gaussian beam composed of n modes, the rod. By appropriate overlap of the diode outputs in the center factor above threshold f ( r ,t ) varies spatially, with distance T of the laser medium, a quasi-Gaussian gain distribution was achieved. When a Gaussian reflectivity mirror [lo] was ...
... For a Laguerre-Gaussian beam composed of n modes, the rod. By appropriate overlap of the diode outputs in the center factor above threshold f ( r ,t ) varies spatially, with distance T of the laser medium, a quasi-Gaussian gain distribution was achieved. When a Gaussian reflectivity mirror [lo] was ...
Fiber Optic Switches
... 1.The silicon surface when treated properly can provide an optical surface of extremely high quality (flat and scatter-free). 2. The excellent mechanical properties of single-crystal silicon allow fabrication of fatigue-free devices. Since single-crystal silicon has no dislocations, it has virtually ...
... 1.The silicon surface when treated properly can provide an optical surface of extremely high quality (flat and scatter-free). 2. The excellent mechanical properties of single-crystal silicon allow fabrication of fatigue-free devices. Since single-crystal silicon has no dislocations, it has virtually ...
Effect of optical basicity and energy transfer on near
... of researchers and the application prospect of Bi doped material more vast, bismuth doped NIR of ultra-wideband luminescence materials have made speedy progress even although the mechanism of the observed NIR emission is still in controversy. NIR bismuth broadband emission has been discovered in var ...
... of researchers and the application prospect of Bi doped material more vast, bismuth doped NIR of ultra-wideband luminescence materials have made speedy progress even although the mechanism of the observed NIR emission is still in controversy. NIR bismuth broadband emission has been discovered in var ...
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