ACS754xCB-150 - Allegro Microsystems
... Magnetic offset error (IERROM). The magnetic offset is due to the residual magnetism (remnant field) of the core material. The magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. ...
... Magnetic offset error (IERROM). The magnetic offset is due to the residual magnetism (remnant field) of the core material. The magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. ...
ACS754xCB-050 - Allegro MicroSystems
... Magnetic offset error (IERROM). The magnetic offset is due to the residual magnetism (remnant field) of the core material. The magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. ...
... Magnetic offset error (IERROM). The magnetic offset is due to the residual magnetism (remnant field) of the core material. The magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. ...
Resistors for Power Supply Applications
... linear rate that signal level rises, refer to the graph at the right. This is why low resistance is favorable, however the signal strength may fall into background noise levels. This is where design compromises must be made, because a higher resistance may be required to cover the full range of curr ...
... linear rate that signal level rises, refer to the graph at the right. This is why low resistance is favorable, however the signal strength may fall into background noise levels. This is where design compromises must be made, because a higher resistance may be required to cover the full range of curr ...
Teccor® brand Thyristors Miscellaneous Design Tips and
... Thyristor failures may be broadly classified as either degrading or catastrophic. A degrading type of failure is defined as a change in some characteristic which may or may not cause a catastrophic failure, but could show up as a latent failure. Catastrophic failure is when a device exhibits a sudde ...
... Thyristor failures may be broadly classified as either degrading or catastrophic. A degrading type of failure is defined as a change in some characteristic which may or may not cause a catastrophic failure, but could show up as a latent failure. Catastrophic failure is when a device exhibits a sudde ...
ACS754xCB-130 - Allegro Microsystems
... Magnetic offset error (IERROM). The magnetic offset is due to the residual magnetism (remnant field) of the core material. The magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. ...
... Magnetic offset error (IERROM). The magnetic offset is due to the residual magnetism (remnant field) of the core material. The magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. ...
FIRST ORDER CIRCUITS Introduction
... is not long enough, the capacitor cannot be fully charged. Similarly, if the non-pulse duration is not long enough, the capacitor cannot be fully discharged, so every time a new pulse arrives, the capacitor will be charged more than the previous time. Sufficient time later, the voltage change of the ...
... is not long enough, the capacitor cannot be fully charged. Similarly, if the non-pulse duration is not long enough, the capacitor cannot be fully discharged, so every time a new pulse arrives, the capacitor will be charged more than the previous time. Sufficient time later, the voltage change of the ...
Solutions 20.37-20.51 - UF Physics
... http://www.phys.ufl.edu/courses/phy2005/solutions/ch20.html ...
... http://www.phys.ufl.edu/courses/phy2005/solutions/ch20.html ...
Parallel Stacking of TVSs For Higher Surge Currents
... equating to a +/-5% tolerance, regardless of its voltage or power rating. However, most devices from individual processing lots typically range over a distribution of +/- 3.5% to +/- 4% with high probability of yielding a greater Ipp rating for two or more randomly selected parts in parallel. Some T ...
... equating to a +/-5% tolerance, regardless of its voltage or power rating. However, most devices from individual processing lots typically range over a distribution of +/- 3.5% to +/- 4% with high probability of yielding a greater Ipp rating for two or more randomly selected parts in parallel. Some T ...
Preliminary Specifications
... The DynaOhm, D619, is an active device which functions as a dynamic resistor, changing its value to maintain a constant current flow. Unlike a fixed resistor which will provide the proper current at a single voltage, the DynaOhm will maintain a fixed current over a wide voltage range. Designed prima ...
... The DynaOhm, D619, is an active device which functions as a dynamic resistor, changing its value to maintain a constant current flow. Unlike a fixed resistor which will provide the proper current at a single voltage, the DynaOhm will maintain a fixed current over a wide voltage range. Designed prima ...
fundemental principes of working in resonant converter
... By raising the switching frequency, you can reduce the size of a transformer and filter, which helps build a smaller and lighter converter with high power density. But as presented earlier, switching loss undermines the efficiency of the entire power system in converting energy, as more losses are g ...
... By raising the switching frequency, you can reduce the size of a transformer and filter, which helps build a smaller and lighter converter with high power density. But as presented earlier, switching loss undermines the efficiency of the entire power system in converting energy, as more losses are g ...
Understanding Basic Analog Passive Devices
... sign of poor design because there are sophisticated methods for compensating for drift and tolerances. Some equipment such as projection displays use many adjustments to correct for mechanical deficiencies in the display system and these adjustments can not be designed out. Pots have all the problem ...
... sign of poor design because there are sophisticated methods for compensating for drift and tolerances. Some equipment such as projection displays use many adjustments to correct for mechanical deficiencies in the display system and these adjustments can not be designed out. Pots have all the problem ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.