Current Handling and Thermal Considerations in a High Current
... With large area die the effect of top metalization sheet resistance can add significant contributions to device on resistance. The voltage dropped across the top metalization between a MOSFET cell and wirebond for example, will reduce the drain to source voltage available to that cell. This leads to ...
... With large area die the effect of top metalization sheet resistance can add significant contributions to device on resistance. The voltage dropped across the top metalization between a MOSFET cell and wirebond for example, will reduce the drain to source voltage available to that cell. This leads to ...
F-RAM Technology Brief - Cypress Semiconductor
... The sensing scheme is very similar to the techniques used in DRAMs. The Bit Line voltage is compared to a reference voltage, which is above the unswitched value but below the switched value. The sense amp drives the Bit Lines to the rails and the output of the sense amp is either HIGH or LOW (1 or 0 ...
... The sensing scheme is very similar to the techniques used in DRAMs. The Bit Line voltage is compared to a reference voltage, which is above the unswitched value but below the switched value. The sense amp drives the Bit Lines to the rails and the output of the sense amp is either HIGH or LOW (1 or 0 ...
Application Note
... Take a look at the 1910 Inductance Analyzer. Although specifically designed for production testing of inductors and coils, in addition to measuring inductance (L), the 1910 instrument is capable of measuring C, DF, Q, Y, G, B, Z, R, X, ESR, , DCR as well as the AC & DC voltage and current to the DU ...
... Take a look at the 1910 Inductance Analyzer. Although specifically designed for production testing of inductors and coils, in addition to measuring inductance (L), the 1910 instrument is capable of measuring C, DF, Q, Y, G, B, Z, R, X, ESR, , DCR as well as the AC & DC voltage and current to the DU ...
STK5DFU340D-E Advance Information 2-in
... value calculated above. The recommended value of CB is in the range of 1 to 47 μF, however, the value needs to be verified prior to production. When not using the bootstrap circuit, each high side driver power supply requires an external independent power supply. ...
... value calculated above. The recommended value of CB is in the range of 1 to 47 μF, however, the value needs to be verified prior to production. When not using the bootstrap circuit, each high side driver power supply requires an external independent power supply. ...
Design considerations for charge-compensated
... redesign with respect to the targeted nominal blocking voltage (approach 2) show a clearly reduced on-resistance for the product. Fig. 15 shows important figure-of-merits in order to evaluate the dynamic device properties. This comparison is important as the devices are widely used in applications w ...
... redesign with respect to the targeted nominal blocking voltage (approach 2) show a clearly reduced on-resistance for the product. Fig. 15 shows important figure-of-merits in order to evaluate the dynamic device properties. This comparison is important as the devices are widely used in applications w ...
View File - UET Taxila
... In its most basic form, an Inductor is simply a coil of wire. For most coils the current, ( i ) flowing through the coil produces a magnetic flux, ( NΦ ) that is proportional to this flow of electrical current. When electrons flow through a conductor a magnetic flux is developed around the conductor ...
... In its most basic form, an Inductor is simply a coil of wire. For most coils the current, ( i ) flowing through the coil produces a magnetic flux, ( NΦ ) that is proportional to this flow of electrical current. When electrons flow through a conductor a magnetic flux is developed around the conductor ...
MeasurementsG11ES
... phones, ipods, etc. 2. AC: Alternating Current In AC, the flow of electric charge periodically reverses direction. AC is generated in a powerplant and is delivered to the electric outlets in your home and buildings. Washing machines, television, water heater etc. operate on ac. When you do have devi ...
... phones, ipods, etc. 2. AC: Alternating Current In AC, the flow of electric charge periodically reverses direction. AC is generated in a powerplant and is delivered to the electric outlets in your home and buildings. Washing machines, television, water heater etc. operate on ac. When you do have devi ...
DATA SHEET DATA SHEET
... These are the two most common ratings for resistors. This power rating is measured in units of the WATT. A third way, one that is not often shown, is a voltage rating. The resistor is rated in the maximum amount of VOLTAGE that can be placed across its terminals, or wires, before it fails. The final ...
... These are the two most common ratings for resistors. This power rating is measured in units of the WATT. A third way, one that is not often shown, is a voltage rating. The resistor is rated in the maximum amount of VOLTAGE that can be placed across its terminals, or wires, before it fails. The final ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.