Conductivity-Modulated FETs-IGBT
... IGBT is resistant to parasitic reconnection when these transistors are used in half-bridges or 3-phase bridge configurations, even with unfavorable conditions such as high-impedance input circuits and high dv/dt values. The rate of rise gfs for the IGBT was set so that in shortcircuit operation with ...
... IGBT is resistant to parasitic reconnection when these transistors are used in half-bridges or 3-phase bridge configurations, even with unfavorable conditions such as high-impedance input circuits and high dv/dt values. The rate of rise gfs for the IGBT was set so that in shortcircuit operation with ...
Charge, Voltage and Capacitance
... example - phone charger, computer power supply, and so on). They have to convert the ac of the mains to dc. (Note that a transformer is used to drop the 230 V ac mains to the required voltage before the ac to dc conversion). The 150 Ω resistor in the circuit represents the appliance and is known as ...
... example - phone charger, computer power supply, and so on). They have to convert the ac of the mains to dc. (Note that a transformer is used to drop the 230 V ac mains to the required voltage before the ac to dc conversion). The 150 Ω resistor in the circuit represents the appliance and is known as ...
NTD20N06 - Power MOSFET, 20 A, 60 V, N-Channel DPAK
... which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates t ...
... which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates t ...
USB 4-Channel, 24-bit Universal Analog Input Device
... USB 2.0 high-speed hub. The USB-2404-UI can be connected to a USB 1.1 Full-Speed port or hub, although performance may be affected. To connect a USB-2404-UI device to your system, turn on your computer and connect the USB cable to an available USB port on the computer or to an external USB hub conne ...
... USB 2.0 high-speed hub. The USB-2404-UI can be connected to a USB 1.1 Full-Speed port or hub, although performance may be affected. To connect a USB-2404-UI device to your system, turn on your computer and connect the USB cable to an available USB port on the computer or to an external USB hub conne ...
doc - Seattle Central
... The pin labeled “NC” is unconnected and isn’t used. The pins labeled “Offset null” are used for error correction and not used in this section. V+ is connected to supply and V- is connected to “negative supply.” In some circuits this may be a potential lower than ground (perhaps achieved by introduci ...
... The pin labeled “NC” is unconnected and isn’t used. The pins labeled “Offset null” are used for error correction and not used in this section. V+ is connected to supply and V- is connected to “negative supply.” In some circuits this may be a potential lower than ground (perhaps achieved by introduci ...
Amplifier Transistors
... suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters whi ...
... suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters whi ...
neuromorphic system with novel electronic synapses based
... device is for LTD, because it contributes negatively to the output current as its conductance decreases. Reversely, the lower RRAM device contributes positively to the total current because of the minus operation, so it is for LTP. The proposed electronic synapse have several advantages compared wit ...
... device is for LTD, because it contributes negatively to the output current as its conductance decreases. Reversely, the lower RRAM device contributes positively to the total current because of the minus operation, so it is for LTP. The proposed electronic synapse have several advantages compared wit ...
11b.2 Balancing Electrical and Thermal Device Characteristics
... choice of either Au or Cu backside metal or the use of solder instead of epoxy results in very little change in thermal resistance. However, the use of thicker metal plates on top of the device shows a 17.3% drop in Rth overall. The lower Rth samples do not show a significant improvement in RF chara ...
... choice of either Au or Cu backside metal or the use of solder instead of epoxy results in very little change in thermal resistance. However, the use of thicker metal plates on top of the device shows a 17.3% drop in Rth overall. The lower Rth samples do not show a significant improvement in RF chara ...
InP/InGaAs SHBTs with 75 nm collector and f/sub T/ >500
... at approximately BVCEO ¼ 2.7 V as shown in Fig. 1. This breakdown value, however, can be misleading, as the breakdown under operating conditions is much lower. It is important to note the presence of thermal effects around the peak fT operating current of this device (IC ¼ 47.2 mA, VBE ¼ 0.94 V); th ...
... at approximately BVCEO ¼ 2.7 V as shown in Fig. 1. This breakdown value, however, can be misleading, as the breakdown under operating conditions is much lower. It is important to note the presence of thermal effects around the peak fT operating current of this device (IC ¼ 47.2 mA, VBE ¼ 0.94 V); th ...
PMMC
... To determine whether or not the galvanometer has the required sensitivity to detect an unbalance condition, it is necessary to calculate the galvanometer current for small unbalance condition. The solution is approached by converting the Wheatstone bridge to its thevenin equivalent. Since we are int ...
... To determine whether or not the galvanometer has the required sensitivity to detect an unbalance condition, it is necessary to calculate the galvanometer current for small unbalance condition. The solution is approached by converting the Wheatstone bridge to its thevenin equivalent. Since we are int ...
direct torque control of induction motors
... ⇒ Fundamental concept of DTC ⇒ Rotor flux reference ⇒ Voltage vector selection criteria ⇒ Amplitude of flux and torque hysteresis band ⇒ Direct self control (DSC) ⇒ SVM applied to DTC ⇒ Flux estimation at low speed ⇒ Sensitivity to parameter variations and current sensor offsets ⇒ Conclusions ...
... ⇒ Fundamental concept of DTC ⇒ Rotor flux reference ⇒ Voltage vector selection criteria ⇒ Amplitude of flux and torque hysteresis band ⇒ Direct self control (DSC) ⇒ SVM applied to DTC ⇒ Flux estimation at low speed ⇒ Sensitivity to parameter variations and current sensor offsets ⇒ Conclusions ...
150LECTURE11CHAPTER11INDUCTORS Lecture Notes Page
... Time constants After 1 T, the inductor’s current is 63.2 % of final value. After 2 T, the inductor’s current is 86.5 % of final value. After 3 T, the inductor’s current is 95.0 % of final value. After 4 T, the inductor’s current is 98.2 % of final value. After 5 T, the inductor’s current is 99.3 % o ...
... Time constants After 1 T, the inductor’s current is 63.2 % of final value. After 2 T, the inductor’s current is 86.5 % of final value. After 3 T, the inductor’s current is 95.0 % of final value. After 4 T, the inductor’s current is 98.2 % of final value. After 5 T, the inductor’s current is 99.3 % o ...
NI USB-9219 User Guide and Specifications
... environment and the basic LabVIEW features you use to build data acquisition and instrument control applications. Open the Getting Started with LabVIEW manual by selecting Start»All Programs»National Instruments»LabVIEW»LabVIEW Manuals or by navigating to the labview\manuals directory and opening LV ...
... environment and the basic LabVIEW features you use to build data acquisition and instrument control applications. Open the Getting Started with LabVIEW manual by selecting Start»All Programs»National Instruments»LabVIEW»LabVIEW Manuals or by navigating to the labview\manuals directory and opening LV ...
Bourns Technology Enables Efficient and Compact DC
... Each uses five main components including a diode (D), inductor (L), resistor (R), transistor (Q), and output filter capacitor (C) as shown in Figures 1-4. The transistor is switched on and off at a fixed rate, also called the converter operating frequency. A control circuit is used to monitor the ou ...
... Each uses five main components including a diode (D), inductor (L), resistor (R), transistor (Q), and output filter capacitor (C) as shown in Figures 1-4. The transistor is switched on and off at a fixed rate, also called the converter operating frequency. A control circuit is used to monitor the ou ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.