Download MC1496 MC1596 Specifications and Applications

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MC1496
MC1596
Specifications
and Applications
Information
BALANCED
.
. designed
input
voltage
MODULATOR/
for
use where
(signal)
the output
and a switching
applications
include
synchronous
detection,
applications.
DEMODULATOR
suppressed
carrier
FM detection,
See Motorola
Application
voltage
function
is a product
(carrier).
of an
Typical
and amplitude
modulation,
phase detection,
and chopper
Note AN-531
for additional
design information.
.
Excellent
Carrier
Suppression
– 65 dB typ @ 0.5 MHz
–50dBtyp@10
.
Adjustable
Gain and Signal
.
Balanced
.
High Common
Inputs
Bias
MHz
(Top View)
Handling
and Outputs
Mode
Rejection
– 85 dB typ
..,,,$.
.
L SUFFIX
CERAMIC PACKAGE
CASE 632-08
141uuu LL 74X
*
D SUFFIX
PLASTIC PACKAGE
CASE 751A-02
SO-14
‘
1
P SUFFIX
PLASTIC PACKAGE
CASE 646-06
I
+ Signal
Input
Gain
Adjust
Gain Adjust
- Signal
Input
Bias
+ output
NC
FIGu RE2–
SUPPRESSED-CARRIER
ORDERING
u
,
~
. .
-
,, ‘EE
,, NC
,
,
,
,
,, –output
‘
, NC
, + Carrier
Input
,, NC
,,
‘
– Carrier
Input
(Top View)
INFORMATION
SPECTRUM
MC1~6D
S@14
MC1496G
Metal Can
o~c to
+
70~c
MC14S6L
Ceramic DIP
MC14WP
PlasticDIP
MC15SSG
Metal Can
- 55SCto + 125-C
MC1596L
FIGURE
Ceramic DIP
3 –
AMPLITUDE-MODULATION
OUTPUT
WAVEFORM
FIGu
RE4–
AMPLITUDE-MODUL
.ATION
SPECTRUM
OMOTOROLA
INC., 1988
DS9132R3
MAXIMUM RATINGS* (TA = + 25°C unless otherwise
noted)
Rating
Applied Voltage
Symbol
Value
Unit
AV
30
Vdc
V7 – V8
V4 – VI
+5,0
*(5+ i5Re}
Vdc
15
10
(V6 – V7, V8 – Vl,Vg
– V7, Vg – V8, V7 – V4, V7 – Vl,
V8 – V4, V6 – V8, V2 – V5, V3 – V5)
Differential
Maximum
Input Signal
Bias Current
Thermal Resistance, Junction to ~r
Ceramic Dual In-Line Package
Plastic Dual In-Line Package
Metal Package
Operating Temperature
.—
100
100
160
Range
‘c
TA
MC1496
MCI 596
Storage Temperature
mA
“CM
ROJA
Range
Oto +70
–55to
+125
–65to
Tstg
ELECTRICAL CHARACTERISTICS* (Vcc = +12 Vdc, VEE = – 8.0 Vdc, II
TA = + 25°C unless otherwise noted) (All input and output char
eristl
+150
“c
= 1.0 mAdc, RI = 3.9 k~, R- = 1.0 kQ,
~ le~~ othe~ise noted
are sir :.end-ed
‘i
MC1596
Characteristic
Carrier Feedthrough
VC = 60 mV(rms) sine wave and
offset adjusted to zero
VC = 300 mVp-p square wave:
offset adjusted to zero
offset not adiusted
Carrier
fs =
fc
f;
Hg.
Note
5
1
Symbol
Min
fc = 1.0 kHz
fc = 10 MHz
>
—
fc = 1.0 kHz
f~ = 1.0 kHz
0.2
100
Suppression
10 kHz, 300 mV(rms)
= 500 kHz, 60 mV(rms) sine wave
= 10 MHz, 60 mV(rms) sine wave
Transadmittance Bandwidth (Magnitude) (RL = 50 ohms)
Carrier Input Port, VC = 60 mV(rms) sine wave
fs = 1.0 kHz, 300 mV(rms) sine wave
Signal Input Port, VS = 300 mV(rms) sine wave
IVCI = 0.5 Vdc
\.
1+.,
&
Min
MC1496
—
—
—
3
Common-Mode
Differential
Quiescent Output Voltage (Pin 6 or Pin 9)
Output Voltage Swing Capability
Power Supply Current
16 + Ig
65
50
—
—
300
—
—
300
—
80
—
3.5
—
2.5
3.5
—
200
2.0
—
—
—
—
200
2.0
—
—
MHz
—
VN
40
5.0
—
12
12
25
25
—
—
12
12
30
30
0.7
0.7
5.0
5.0
—
0.7
0.7
7.0
7,0
2.0
—
2.0
—
14
50
—
14
80
90
—
—
90
—
—
—
8,0
—
—
—
—
2,0
3,0
3.0
4.0
33
—
—
7
7
—
7
—
ITCIOOI
9
4
CMV
—
5.0
– 85
ACM
9
10
—
—
7
6
10
7
Vout
Vout
5
pD
—
—
—
—
—
8,0
* Pin number references pertain to this device when packaged in a metal can. To ascertain the corresponding
ceramic packaged devices refer to the first page of this specification sheet.
MOTOROLA
k
—
Ilo
@
mV(rms)
—
Icc
IEE
DC Power Dissipation
~V(rms)
—
7
CO’%mon-Mode Gain, Signal Port, fs = 1.0 kHz,
IVCI = 0.5 Vdc
0.4
200
40
—
80
,?(
7
lnDut Swina, Sianal Port, fs = 1.0 kHz
0.04
20
—
40
5.0
Ctw*bn-MOde
—
—
65
50
8
6
of Input Offset Current
40
140
Unit
dB
6
Average Temper@?$&@fficient
(TA = – 55°C’~~*~:~5”C)
output ~fi,@i&f;re*t
Max
5
?*Io
Input 8ias Current
Typ
Semiconductor
2
—
—
—
5.0
Vp-p
– 85
dB
8.0
—
—
2.0
3.0
4.0
5.0
8,0
Vp-p
Vp-p
mAdc
33
pin numbers for plastic or
Products Inc.
nWC
-mW
GENERAL
Notel
–Carrier
OPERATING
Feedthrough
base current, PD = 2 15 (V6 – V1O)
scripts refer to pin numbers.
Carrier feedthrough
is defined as the output voltage at carrier
frequency with only the carrier applied (signal voltage = 0),
Carrier null is achieved by balancing the currents in the differential amplifier
by means of a bias trim potentiometer
(RI of
Figure 5).
Note 2 – Carriar
INFORMATION*
+ 15 (V5
– V1O) where sub-
Note 6 – Design Equations
The following
is a partial list of design quations
needQ, to
operate the circuit with other supply voltagas and inpu~<&,O~~&.~
~,....z,.h
tions. See Note 3 for Re equation.
,., -c>.
Suppression
Carrier suppression is defined as the ratio of each sideband output to carrier output for the carrier and signal volt~e
levels specified.
Carrier suppression is very dependent on carrier input level, as
A low value of the carrier does not fully
shown in Figure 22.
switch the upper switching devices, and results in lower signal
gain, hence lower carrier suppression. A higher than optimum carrier level results in unnecessary device and circuit carrier feedThe
through,
which again degenerates the suppression figure.
MC1 596 has been characterized
with a 60 mV(rms)
sinewave
carrier input signal. This level provides optimum
carrier suppression at carrier frequencies
in the vicinity
of 500 kHz, and is
generally
recommended
for balanced
modulator
applications.
Carrier feedthrough
is independent
of signal level, Vs.
Thus
carrier suppression can be maximized
by operating with large signal levels. However, a linear operating mode must be maintained
in the signal-input transistor pair — or harmonics of the modulating
signal will be generated and appear in the device output as spurious
sidebands of the suppressed carrier.
This requirement
places an
‘ ‘?t{Jp
~a,.
.<:)
v6=vg=v+–15RL
..-,,\...
,Is ~.i+,,
“$:t;,,
..>+~,i?.:i
uPPer limit on in Put-signal amplitude
(see Note 3 and Figure 20).
Note also that an optimum
carrier level is recommended
in Figure 22 for good carrier suppression and minimum
spurious side-
,?$tefi?=
Biasing
QJr,. .....
$$~$$~~fie
MC1 596 requires three dc bias vo Itage levels which must be
band generation.
..~~et externally.
Guidelines for setting up these three levels include
At higher frequencies circuit layout is very important
in order
at Ie=t 2 volts collector-base
bias on all transistors
to minimize
carrier feedthrough.
Shielding may be necessary in
,,,~i~ maintaining
while not exceeding the voltages given in the absolute maximum
order to prevent capacitive
coupling between the carrier in~$t
r.?,.’~..~:
~.
rating table;
leads and the output leads.
!l>.< l\,,:,,
,
10, VS corresponds
within
the integrated
should be calculated as the summation
at each pOrt,
i.e.
aSSUming
Vg
=
circuit
[(V7,
V8) – (Vi,
V4)]
>
2.7 Vdc
30Vdc
[(VI,
V4) – (V5)1 2
>
conditions
Vg,
2.7 Vdc
are based on the following
V7 = V8,
approxima-
VJ = V4
i. (each sideband)
vs (signal)
i. (signal)
Y21S = VS (signal)
bandwidth
of
Vo=o
Signai transadmittance
bandwidth
is the 3dB
device forward transedmittance
as defined by:
Vc = 0.5 Vdc, V.
bandwidth
of the
= O
*Pin number references pertain to this device when packaged in a
matal can. To ascertain the corresponding pin numbers for plastic or ceramic packaged devices refer to the first page of this
specification sheet.
package
of tha voltage-current
prod15 = 16 = 19 and ignoring
V6,
MOTOROLA
@
30 Vdc >
Y21C =
Note 5 – Power Dissipation
UCtS
2 Vdc
Carriar transadmittance
bandwidth
is the 3-dB
the device fomard transadmittance
as defined by:
to a
Swing
PD,
>
Note 8 – Transadmittance Bandwidth
?~&-~&~mon-mode
swing is the voltage which may be applied
to bo~bases
of the signal differential
amplifier, without saturating
the current sources or without saturating the differential
amplifier
itself by swinging it into the upper switching devices.
This swing
is variable depending on the particular
circuit and bi~ing conditions chosen (see Note 6).
dissipation,
V8)]
Bias currents flowing into pins 1, 4, 7, and 8 are transistor base
currents and can normally
be neglected if external bias dividers
are designed to carry 1.0 mA or more,
req:i,~~~h~at
the signal input be below a critiby ~~’~l~,,$he
bias current 15
Note that in,j$~e$st~’’cir cuit
of F igura
maximum v~e
q~ ~volt peak.
>:8’::::,
‘J$L>$F.
r~$’
Power
Vg) – (V7,
V6 =
,,~,~
>,,::{,y,.,,~;~’
Note 4 ~~~&on-Mode
[(V6,
The foregoing
tions:
.,.
x:.. ,:1<
A constant dc potential is applied t~~~h$.~$?~er input termina Is to
fully switch two of the upper tr~%i{~~{$><’on” and two transistors
“off” (Vc = 0.5 Vdc).
This in:&ffd~ forms a cascode differential
~+.>
~~~:i
,,:,~’
amplifier.
Linear operation
cal value determined
30 Vdc >
Semiconductor
3
Products Inc.
I
Note 9 – Coupling and Bypass Capacitors
Note
Cl and C2
Capacitors Cl and C2 (Figure 5) should be selected
actance of less than 5.0 ohms at the carrier frequency.
12 – Signal
—of
the
0
10 – Output Signal, V.
and
modulating
signal
inputs
with
a
single-ended
oscillation
should be
directlv to each input using short leads. This will reduce
source-tuned circuits that muse the oscillation
the
SIGNAL
INPUT
(PINS
1 & 4)
The output signal is taken from pins 6 and 9, either balanced
Figure 12 shows the output levels of each of the
or single-ended.
two output sidebands resulting from variations
in both
the
carrier
-.
Stability
Under certain values of driving source impedance,
I n this event, an RC suppression network
may occur.
for a re-
connected
Note
Port
output
connection.
,.
‘>3’,,,.:,.,
L—
~.!1,,.
‘-!:[\?\
~a,.
c1
P
—
,.<,’
51
Re=lk
~,)
0.1 PF
2
C*
CARRIER O.lpF
lNPUTVc HI
* +v~
-8
MC1496G
MC1596G
1
Vs.
MODULATING
SIGNAL
10 k
INPUT
10k
9
5
51
MC1496G
MC1596G
~~
-4
T
3
6
9
L
-%,}:*
.*$,it},,
,1:.,, ~~l.\’ii
6.8 k
[f
=
-8 Vdc
FIGURE
8 – TRANSCONDUCTANCE
BANDWIDTH
Vcc
lk
lk
~~
—
B
51
CARRIER
INPUT
0.1 PF
O,lPF
7
n
o
“C+
Vs ●
MODULATING
SIGNAL
10k
INPUT
1
r
1
1
10k
/+
,.
&&
CARRIER
I
NOTE
: Pi”
~“~ber
numbers
-8 Vdc
VEE
references
for
plastic
pertein
or ceramic
to this de”ice
peckaged
MOTOROLA
@
-
NULL
-8 Vdc
VEE
when
devices
peckaged
refer
to the
in a metal
can.
first
of
page
Semiconductor
4
this
To
ascertain
specification
the
corresponding
sheet.
Products Inc.
pin
—
TEST CIRCUITS
FIGURE
9 – COMMON-MODE
(continued)
FIGURE
GAIN
10 – SIGNAL
GAIN
AND
OUTPUT
SWING
lk
.
Vs
9
~,10
5
50: :
6.8 k
50
—
~
●
-a Vdc
VEE
NOTE
: Pin
number
numbers
~efere”ces
for
plastic
pertain
to
or ceramic
this
device
packagecl
when
devices
packaged
refer
in a metal
to the first
can.
TO aster
page of this s
~~,,
TYPICAL
Tvpical
characteristics
were
Vc = 60 mV(rms),
FIGURE
11 – SIDEBAND
OUTPUT
versus
CHARACTERISTICS
obtained
fs = 1 kliz,
CARRIER
with
VS
circuit
= 300
(CO~tlK~~@?
shown
mv(rms),
in
Fi~&~~5,
fc
= 500
T+~;$25°~>~nless
,. ‘$:.,$
,$s~\G~E
1,,,
LEVELS
+$?
kHz
(sine
Otherwi$e
12 – SIGNAL-PORT
INPUT
wave),
noted.
PARALLEL-EQUIVALENT
RESISTANCE
u
u
2
L
—
:
m
L
z
u
I
10
1.0
2.0
5.0
10
f, FREQUENCY
,
\
\l
,
,
I
I
I
,
I
I
I
I
I
I
I
I
l\
I
I
,
,
I
I
\
,
k
I
I
I I I I
i]
I
I
I
[
i
I
I I I
I
1
I
1
1 1 I 1 I
(mV[rrns] )
20
50
100
o
(MHz)
MOTOROLA
@
1
I I
1
1
I.ul
Vc, C~Rl<%\$&EL
,
1
50
&
1
-qp
\.
100
b
FREQUENCY
versus
Semiconductor
5
10
1.0
f, FREQUENCY
(MHz}
Products Inc.
100
1
TYPICAL
Typical
characteristics
were
VC = 60 mV(rms),
FIGURE
15 – SIDEBAND
TRANSADMITTANCES
CHARACTERISTICS
obtained
f~ = 1 kHz,
with
circuit
VS = 300
.—
(continued)
shown in Figure 5, f~ = 500 kHz (sine wave),
mV(rms),
TA
= +25°C
AND SIGNAL
PORT
versus FREQUENCY
unless
otherwise
FIGURE
noted.
16 – CARRIER
SUPPRESSION
verws TEMPERATURE
1.0
0.9
F
:
E
u
~
<
+
k
z
z
m
0.8
~
0.3
z
.“
0.2
0.7
0.6
0.5
0.4
0.1
0
0.1
1,0
100
10
fc, CARRIER
FREQUENCY
1000
-75
-50
-2@+:?i O ‘* +25
+50
+75
+100
+125
+150 +175
(MHz)
*\:.
FIGURE
17 – SIGNAL-PORT
FREQUENCY
.@~~URE18
RESPONSE
0.05
– CARRIER
0.1
SUPPRESSION
0.5
fc, CARRIER
I Hllll
I
I
I
1.0
versus FREQUENCY
5.0
FREQUENCY
10
50
(MHz)
I
! I
—
I
0.05
0.1
I I 111111
0.5
I
I
1.0
fC, CA RR IERFREQUENCY
I 1111’1
5.0
10
I
IJ
50
0
(MHz)
M070ROLA
@
I
200
400
VS, INPUT SIGNAL AMPLITUDE
Semiconductor
6
Products Inc.
800
600
(mV[rms]
)
TYPICAL
FIGURE
CHARACTERISTICS
(continued)
21 – SUPPRESSION
OF CARRIER
HARMONIC
SIDEBANDS
versus CARRIER
FREQUENCY
o
1
a
+
E 10
z
a
~g20
2La
XZ
-a
am30
Uu
0
S=
AE40
g:
=E
0a50
~u
u
m
* 60
~
7n
0.1
i,05
1.0
0.5
The
cuit,
MCI
596/MC
is shown
This
in
circuit
driven
by
a
1496,
Figure
balanced
multiplication
the
output
a monolithic
consists
The
of
an
balanced
upper
quad
differential
output
signal
50
(MHz)
modulator
cir-
lcaO’OuT
23.
standard
sources.
10
5.0
fC, CAR RI ERFREQUENCY
collectors
of
are
the
input
times
dual
current
so that
voltages
the
amplifier
with
cross-coupled
two
is a constant
differential
amplifier
full-wave
occurs.
product
of the
T@~Js,
twdMnp@3.,
7 (+)
o
cates
that
the
difference
used
of
as
a
detector,
these
balanced
particular
input
modu
Iator,
so
of
other
an
~;tters
extert~g$~~,~wr
resistom.
\,so
SIGNAL
IVPUT
be
BIAS
resistance
to
may
at
the
be
device
v,,
I
lo~
t:~,.
.:;in
upper
a linear
will
Iow-lev@[
,@$~&%ion
contain,d,:~fi~~=n’~
an amplitu~
amp
w~cE
For’’&~~~JPevel
.;,,.,
the
op@~WQ,-et
sum
and
Iating’’slgnal
the
in the
the
operation
lower
differential
input
either
24 – TYPICAL
amplifier
-
of
the
the
)
components
product
carrier
and
of the
input
input
port
NOTE
$O.lfi:
51
have
2n3
“c 0.1 fiF
linear
6
-8
GARRIER~}
INPUT ●
MC1596G
1
difference
Port,
frequency
and
The
signal
will
si9nal
not
the
the
components
fundamental
output
and
amplitude
amplitude.
appear
output
AnV
in the
si9nal
of
dd
will
the
will
modu
harmonim
of
MODULATING
SIGNAL
INPUT
9
● -V.
10 k
( )10
be a constant
amplitude
variations
output.
:
Pin
number
numbers
for
references
elastic
pertain
or ceramic
to this
MOTOROLA
@
de”ice
Dackaoed
when
devices
packaged
refer
to the
in a metal
first
4)
● -a Vdc
VEE
NULL
can.
Daqe of
Semiconductor
7
I
15
—
t
CARRIER
I
CIRCUIT
—
signal
and
MODULATOR
lk
m
Ik
the output si9nal
ports,
frequencv
at
be operated
Vs
modulating
signal
may,
applications.
at both
modulating
frequencv.
carrier
The
most
is a function
frequency
carrier
times
amplifier
difference
‘,.A’}.
Iitq@&@q
<*..*
t~+
,:..+.
.:,
cont$,~
FIGURE
dif~~~t~~!
or a satu~~e~$,. *de.
,. ...,>~.~,.
t.
in a li~$~~m~~
for
is operated
For
quad
GAINADJuST
3
output
The
0
requiring
connected
ar~$employed
2
1 [+)
product
qp~?~a$$ons
:,1:
‘i~~+~’
has~~ts
4 (-)
and
may
balan$e~,+y~r,
characteris:~.e
load
onig~~k~h’~rn
Thus,,$$>~~~b&
doubly
amplifier
that
external
con;st
and
signal
differential
pins
Also,
will
frequencies.
doubler,
output
lower
package
used.
”spectrum
two
frequency
The
the
output
the
this
To
ascertain
SPeCifiCati
the
=
corresponding
OrT sheet.
Products Inc.
pin
OPERATIONS
INFORMATION
The linear signal handling capabilities of a differential
amplifier
are well defined.
With no emitter degeneration,
the maximum
input voltage for linear operation
is approximately
25 mV peak.
()(
RE)volts
peak.
This expression may be used to compute
RE for a given input voltage amplitude.
Input
(Vc)
value of
FIGURE
25 – TABLE 1
GAIN AND OUTPUT
FREQUENCIES
VOLTAGE
Carrier
Signal
the minimum
I
Approximate
Volmge Gain
I
I
Output Signal
Frequency
RLVC
Low-level
dc
fM
2(RE
High-level
dc
—
The gain from the modulating signal input port to the output is
the MC1596/MC1496gain
parameter which is most often of interest
to the designer.
This gain has significance onlv when the lower
differential
amplifier is operated in a linear rode, but this includes
most applications of the device.
As previously mentioned,
the upper quad differentiali~,rn~$$fier
may be operated either in a linear or a saturated mod%, %Q,~*Skimate gain expressions
have been developed
for \#e ,h~i~$596/
MC1496 for a low-level modulating signal input an~i~~:$t,$’llowing
*“:3 ‘\?\$,
carrier input conditions:
,~.: >,,:))>’
.
~${y>!.$,
‘*}.
,.~”
~
1) Low-level dc
.,.? ?%$(-~”’
“t:~;,,t<~?
,:!>.
2) High-level dc
‘>:-:~>:*;\
..?’
.>’$..,
,,.?.
3) Low-level ac
‘%i
.tt’.>y *,~
4) High-level ac
,:, “./:;.},
,.,,~i,~;>
Since the upper differential
amplifier
has its emitters internally
connected,
this voltage applies to the carrier input port for all
conditions.
Since the lower differential
amplifier
has provisions for an
external emitter resistance, its linear signal handling range mav be
adjusted by the user. The maximum
input voltage for linear operation
mav be approximated
from the following
expression:
V = 15
(continued)
I
+ 2re) (~)
RL
RE +2re
I
I
fM
Vc is Ca@V~ Inp&t V~ltage.
“.’
When ~~$~sput
signal contains multiple frequencies,
the$~~~~~$%pression given is for the output amplitude of
$~h~..pf.~]he two desired outputs, fc I fM and fc – ‘M.
3. .*fi+$ g%n expressions are for a single-ended output.
For
~,,$ ~~,ifferential
output connection,
mu Itiply each expres.,.}.*::
,, sion by two.
,.,~ ,>
2.
—
,:,,
~$,t,~{,,
~.,\,.&\
High-level
Double
0.637
ac
sideband
RL
RE+2re
fc ~f M;,<-;+;*,
“
suppressed,td~~~~~{$i% ovulation
application:~$~~+mav
496 with ~,”3$~~&dc
is the
basic
be necessary to operate the
supply voltage instead of dual
supplies.
Figure 2G~$Q,@s’2
balanced modulator
designed for
operation with a $io.~ ~?’~ Vdc supply.
Performance
of this cir.)!... ,$‘,.,
cuit is similar to+~,h,~~,:~F.khedual supply modulator.
~\.a,
*
.<a%,.,
\.y).
AM Modula~r
f’<:+”
. ..};
. .,,,;
, ,.,~,!,8
The.,$$fr&Ji,$”Yhown in Figure 27 mav be used as an amplitude
mod~latq~~wlth
a minor modification.
~~~+~q~ is required to shift from suppressed carrier to AM
opera~n
is to adjust the carrier null potentiometer
for the proper
amoun% of carrier insertion in the output signal.
However,
the suppressed carrier null circuitrv
as shown in
Figure 27 does not have sufficient adjustment
range. Therefore,
the modulator
may be modified
for AM operation
by changing
two resistor values in the null circuit as shown in Figure 28.
Product
Detector
The MC1596/MC1496
tor (see Figure 29).
makes an excellent
SSB product
MOTOROLA
@
K = Boltzmann’s
Constant, T = temperature
Kelvin, q = the charge on an electron.
5fc +Q(6?..” ‘:;&.
,x..$:.}~
“~
.,?,){.
.. .!.
... ,>’,.‘ ,:::
..Q)..?\
::, ,;Je
,:‘\y,\.
.~>,
., ‘;,,),$!
application
of the MCI 596/%1
4%.
The suggested circuit for
this application
is shown ~n tfi~x>~ont page of this data sheet.
I n some
MC1596/MCl
7.
KT
— s
q
in degrees
26 mV at room temperature
This product detector has a sensitivity of 3.0 microvolt
and a
dynamic range of 90 dB when operating at an intermediate
frequencv of 9 MHz.
The detector is broadband for the entire high frequency range.
For operation
at very low intermediate
frequencies down to 50
kHz the 0.1 #F capacitors on pins 7 and 8 should be increased to
1.0 #F.
Also, the output filter at pin 9 can be tailored to a
specific intermediate
frequencv
and audio amplifier
input impedance.
As in all applications
of the MC1596/MC1496,
the emitter
resistance between pins 2 and 3 may be increased or decreased to
adjust circuit gain, sensitivity, and dynamic range.
This circuit may also be used as an AM detector bv introducing
carrier signal at the carrier input and an AM signal at the SSB
input.
The carrier signal mav be derived from the intermediate
frequency signal or generated locally.
The carrier signal may be introduced
with
or without
modulation,
provided
its level is
sufficiently
high to saturate the upper quad differential
amplifier.
If the carrier signal is modulated,
a 300 mV(rms)
input level is
recommended.
detec-
Semiconductor
8
Products Inc.
APPLICATIONS
Doubly
INFORMATION
(continued)
Phase Detection
Balanced Mixer
The MC1 596/MC 1496 mav be used as a doublv
balanced
mixer with either broadband
or tuned narrow band input and
output networks.
The local oscillator
signal is introduced
at the carrier input
port with a recommended
amplitude of 100 mV(rms).
Figure
Output.
30 shows a mixer
Frequency
Doubler
with
a broadband
input
tor principle.
cauw the two
doubler
: Pin number
numbers
references
for
plastic
to this de”ice
pertain
or ceramic
packaged
A tuned circuit is added at oT~,,@$tWe inputs to
input signals to vary in pha~d~’t’?:,$finction
of fre-
quencv.
The MC1596/MC1496
will then pkw’~~san
,,,;t’..,‘.>:~s.
.\.\*
is a function of the input signal frequen~;+~,,~ ~.C~
\t}~\ .,t,
~.,
~
kt,
.$.
.$,
‘::?+ -~~
\<(:l},::
:;\kL
...~,>,‘:’\.~-t$,.
y *.$,$,$<
~~ti:~”
>,? $.,,
bv
Figures 31 and 32 show a broadband frequencv doubler and a
tuned output .verv high frequencv
(VHF)
doubler, respectively.
NOTE
Detection
output which is a function
of the phase difference$:m~~~the
two input signals.
‘$*, ‘1$3
An F M detector mav be constructed
bv usi~~,?k~~wse
detec-
and a tuned
The MCI 596/MC1496
will operate as a frequencv
introducing the same frequencv at both input ports.
and FM
The MCI 596/MC 1496 will function as a phase detector.
Highlevel input signals are introduced at both inputs. When botM~nputs
are at the same frequency
the MCI 596/M C1496 will ~~w~.an
when
devices
packaged
refer
to
the
in a metal
first
“>,.*. ,,,..
aS&@~~$&
the corresponding
~,,;,+,. ,~:,.
this s*Y*@tion
sheet,
,!..
‘!$
,)>.!/$
:~j>
can.
page of
output
TO
which
pin
..* \ \.,,w.
$,$$,
.8..*,>!
,.+*4sy, $~<
:.
.,.
.,
TYPICAL
FIGURE
APPLICATION&
‘J\,,,:;}
.,. .
!$]s,
,\.,t\
\...,,,\
x~:~:,,
27 – BALANCED
26 – BALANCED
MODULATOR
(+12 Vdc SINGLE
SUPPLY)
Ff&$~RE
MODULATOR-DEMODULATOR
Vcc
lk
T
I
I
1/
820
m
Vcc
● +12 Vdc
1
1.3k
lk
w
.
3k
,
, ,.;,
.,
3k
~Ql
51
1
CARRIER i INPUT
_
=
I
Q.1UF I
uF,
*W3
3,;;
4
6
8
6-
8
1
WI”
T
T
MC1596G
MC1496G
.
.
FIGURE
29 – PRODUCT
DETECTOR
(+12 Vdc SINGLE
SUPPLY)
820
1.3k
(
+12 Vdc
~
lk
INPUT’
.
1
-
~s
MO:l{~~T: NG
INPUT
r
=
CARRIER
INPuT
~
300 mv(rms]
MC1496G
4
1
9
750
.
I
● -Vo
SSB INPUT
3k
O.1MF
lk
O.l UF
5
)
L
*o.::510s:’ok
I
6.8 k
15
—
t
CARRIER AOJUST
( VEE
-8 Vdc
T=
=
—
MOTOROLA
@
Semiconductor
9
Products Inc.
AF
10 ~F OUTPUT
L
TYPICAL
FIGURE
30 – DOUBLY
(BROADBAND
INPUTS,9.O
APPLICATIONS
(continued)
BALANCED
MIXER
MHz TUNED
OUTPUT)
FIGURE
31 – LOW-FREQUENCY
DOUBLER
Vcc
7 ‘~2 Vd,
Vcc
lk
Ik
—
fluOl ,.F
LOCAL
OSCILLAi !;R
O~01 JF
,go ,,,”[r,,, ~,
1
MC1496G
9
RF INPuT
51
10
()
=
NULL AOJUST1
vEE &
●. 8 V((, LI =44 TURNSAWG XO 28 ENAMELEOWIBE
ivOUNO
ON MI CROMETALS TYPE 446 TO RUIO CORE
LI =1 TURNAWG
NO 18 WlRE,7/32”10
t
FREQUENCY
CARRIER FUNDAMENTAL
fs
MO DULATING
fc+fs
I
BALANCED
~
fc
MODULATOR
fc+nfs
SIGNAL
FUNDAMENTAL
CARRIER
SIOEBANDS
SPECTRUM
FUNDAMENTAL
CARRIER
nfc
CARRIER
HARMONICS
nfcinfs
CARRIER
HARMONIC
SIDEBAND
HARMONICS
SIDEBANDS
—
NOTE:
Pi”
number
numbers
for
references
plastic
pertain
or ceramic
to
this
packaged
MOTOROLA
@
device
when
devices
packaged
refer
to the
in a metal
first
can.
page of
Semiconductor
10
To
this
ascertain
specification
thecorrespond;
sheet.
Products Inc.
ng pin
THERMAL
—
MOTOROLA
@
INFORMATION
Semiconductor
11
Products Inc.
—
I
OUTLINE DIMENSIONS
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not
reserves
assume
patent
rights
Affirmative
n
any
the
right
I(ability
nor the rights
Action
to make
ar!slng
out
of others
changes
w!thout
further
of the application
Motorola
not!ce
to any
or use of any
product
and @are
registered
products
trademarks
to Improve
described
of Motorola,
rehablllty,
here!n,
Inc
neither
Motorola,
Inc
funct!on
does
or design
(t convey
IS an Equal
any
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license
Employment
does
under
Its
—
Oppotiunlty/
Employer
MOTOROLA
Semiconductor
BOX
20912
● PHOENIX,
12
L893-!O
here!n
or C!rcult
—
PR1hTED
IN
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,-88
LWER,AL
.,,”,
.,638,
,,,,,
y,,,h,
Producfs Inc.
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85036
● A
SUBSIDIARY
OF
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INC.
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