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BFS481
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
4
5
6
collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
1
2
3
• Two (galvanic) internal isolated Transistors in
one package
• For orientation in reel see package information below
• Easy to use Pb-free (RoHS compliant) and halogen
free industry standard package with visible leads
BDTIC
• Qualification report according to AEC-Q101 available
C1
E2
B2
6
5
4
TR2
TR1
1
2
3
B1
E1
C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
BFS481
RFs
Pin Configuration
1=B
2=E
3=C
1
4=B
5=E
Package
6=C
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SOT363
2013-06-18
BFS481
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
20
Base current
IB
2
Total power dissipation1)
Ptot
Unit
V
mA
175
mW
TS ≤ 83 °C
BDTIC
Junction temperature
TJ
Storage temperature
TStg
150
°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
Value
Unit
380
K/W
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 5 mA, VCE = 8 V, pulse measured
1T
S is measured on the collector lead at the soldering point of the pcb
the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2For
2
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2013-06-18
BFS481
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
fT
6
8
-
Ccb
-
0.23
0.4
Cce
-
0.13
-
Ceb
-
0.4
-
AC Characteristics (verified by random sampling)
Transition frequency
GHz
IC = 10 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
BDTIC
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 2 mA, VCE = 8 V, ZS = ZSopt ,
-
0.9
-
-
1.2
-
Gms
-
20
-
dB
Gma
-
15
-
dB
f = 900 MHz
IC = 2 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum stable1)
IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt ,
f = 900 MHz
Power gain, maximum available2)
IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt ,
f = 1.8 GHz
|S21e|2
Transducer gain
dB
IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
-
16
-
-
11
-
IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 MHz
1G
ms
2G
ma
= |S 21 / S12 |
= |S21e / S12e| (k-(k²-1) 1/2)
3
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2013-06-18
BFS481
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
200
mW
160
K/W
RthJS
Ptot
140
120
10 2
100
BDTIC
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
80
60
40
20
0
0
20
40
60
80
100
120 °C
10 1 -7
10
150
10
-6
10
-5
10
-4
TS
10
-3
10
-2
s
10
tp
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
P totmax/PtotDC
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
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2013-06-18
0
Package SOT363
BFS481
BDTIC
5
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2013-06-18
BFS481
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
BDTIC
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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2013-06-18