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MatSci 152: Principles of Electronic Materials and Devices
Stanford University, Spring Quarter, 2013-2014
Description:
MatSci 152 will introduce students to the materials science and engineering behind semiconductor devices,
including their applications and processing. Topics for the course include kinetic molecular theory and
thermally activated processes; electrical and thermal conductivity of metals and semiconductors;
introductory quantum mechanics for materials science; band structure and intrinsic and extrinsic
semiconductors; elementary p-n junction theory; semiconductor devices including MOSFETs, LEDs, lasers,
and solar cells. The course will also cover the basics of bulk and nanoscale semiconductor processing
including crystal growth, thin film deposition, etching, ion-implantation, colloidal synthesis, and
lithography.
Prerequisite: ENGR 50 or equivalent.
Staff:
Faculty:
Professor Jen Dionne, 125 Durand, 736-2286, [email protected]
Teaching Assistant:
Office Hours: Tuesday 4:00-5:00pm (Durand 125)
Ashwin Atre, [email protected]
Office Hours: To be determined
Website: http://dionne.stanford.edu à Classes
Text: ‘Principles of Electronic Materials and Devices’ (Third Edition), S.O. Kasap
Class Topics:
1. Basic Materials Science (Chapter 1):
* kinetic molecular theory, thermally activated processes, diffusion, crystal structure
2. Classical Materials Science (Chapter 2):
* electrical conduction in solids
* thermal conduction in solids
3. Introductory Quantum Mechanics (Chapter 3):
* particle-wave duality, tunneling & scanning tunneling microscopy, lasers I
4. Modern Theory of Solids (Chapter 4):
* band theory of solids – why close-packed atoms are different from isolated atoms & molecules
* quantum theory of electrical and thermal conduction
-------------Midterm---------------5. Semiconductors (Chapter 5):
* intrinsic and doped semiconductors, carrier generation and recombination, metal-semiconductor
contacts
6. Semiconductor Devices (Chapter 6):
* p-n junctions,
* transistors (CMOS, MOSFETS)
* light emitting diodes and lasers II
* solar cells
* photodetectors & CCDs
7. Materials processing and nanofabrication
* crystal growth, lithography, colloidal synthesis
MatSci 152 Policies and Dates:
1. 
Respect and obey Stanford’s Honor Code
2. 
Collaboration policy: Limited homework collaboration. You are welcome to discuss problems and concepts
with fellow students verbally, but you should not share written work
3. 
Exams will be “open note” (1 page, single sided sheet) but limited time format. Exam dates are:
* Midterm exam (in class, 1.25 hour limit): Tuesday, May 6.
* Final exam (in class, 1.25 hour limit): Tuesday, June 3
4.
Homework will generally be issued on Thursday and will be due the following Thursday. Unless prior
approval is obtained, late homework will be scored according to the relation:
HomeworkScore(tdays) = HomeworkScore(Duedate)* 2-t
5. Course grades will be weighted as follows:
Homework:
40%
Midterm Exam:
25%
Final Exam:
35%