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Transcript
US5U1
Transistors
2.5V Drive Nch+SBD MOSFET
US5U1
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zDimensions (Unit : mm)
TUMT5
2.0
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
0.2Max.
1.3
Abbreviated symbol : U01
zApplications
Switching
zPackage specifications
Package
Type
zInner circuit
(5)
Taping
(4)
TR
Code
Basic ordering unit (pieces)
3000
US5U1
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
zAbsolute maximum ratings (Ta=25°C)
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
∗2
Limits
30
12
±1.5
±6.0
0.75
6.0
Unit
V
V
A
A
A
A
Power dissipation
PD
0.7
W / ELEMENT
Channel temperature
Tch
150
°C
Symbol
VRM
VR
IF
Limits
30
20
0.5
Unit
V
V
A
2.0
0.5
A
W / ELEMENT
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
IFSM
PD
Tj
∗1
∗2
150
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Rev.B
1/3
US5U1
Transistors
<MOSFET and Di>
Parameter
Limits
Unit
1.0
−55 to +150
W / TOTAL
°C
Symbol
PD ∗1
Tstg
Total power dissipation
Range of storage temperature
∗1 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
30
−
0.5
−
−
−
1.5
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
170
180
240
−
80
14
12
7
9
15
6
1.6
0.5
0.3
10
−
1
1.5
240
250
340
−
−
−
−
−
−
−
−
2.2
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=12V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 1.5A, VGS= 4.5V
ID= 1.5A, VGS= 4V
ID= 1.5A, VGS= 2.5V
VDS= 10V, ID= 1.5A
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 0.75A
VGS= 4.5V
RL= 20Ω
RG=10Ω
VDD 15V, VGS= 4.5V
ID= 1.5A
RL= 10Ω, RG= 10Ω
Conditions
Typ.
−
Max.
1.2
Unit
V
Conditions
IS= 0.75A, VGS=0V
Typ.
−
Max.
0.36
Unit
V
IS= 0.1A
−
−
0.47
V
IS= 0.5A
−
−
100
µA
IS= 20V
∗Pulsed
<Body diode characteristics (Source-drain)>
Parameter
Symbol Min.
Forward voltage
VSD
−
<Di>
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Min.
−
Conditions
Rev.B
2/3
US5U1
Transistors
zElectrical characteristics curves
tf
100
td(off)
td(on)
tr
1
0.01
Ta=25°C
VDD=15V
5 ID=1.5A
RG=10Ω
Pulsed
4
3
2
1
10
0
0.1
0.01
0.5
1
1.5
0.001
0.0
2
1.5
2.0
2.5
Fig.2 Dynamic Input Characteristics
Fig.3 Typical Transfer Characteristics
10
10
Ta=25°C
Pulsed
0.7
0.6
0.5
0.4
0.3
0.2
VGS=0V
Pulsed
Ta=125°C
75°C
1
25°C
−25°C
0.1
0.1
2
3
4
5
6
7
8
9
0.01
0.0
10
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
10
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
Ta=125°C
1
Ta=125°C
1
75°C
25°C
−25°C
0.1
0.01
1.5
0.1
1
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
10
1
10
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
Fig.5 Source Current vs.
Source-Drain Voltage
VGS=4.0V
Pulsed
0.1
1.0
VGS=4.5V
Pulsed
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
10
0.5
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
1
GATE-SOURCE VOLTAGE : VGS (V)
0.1
0.01
1.0
Fig.1 Switching Characteristics
0.8
1
0.5
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE CURRENT : IS (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (mΩ)
75°C
25°C
−25°C
TOTAL GATE CHARGE : Qg (nC)
0.9
0.0
0
Ta=125°C
DRAIN CURRENT : ID (A)
1.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
1
1
0
0.1
VDS=10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
10
10
6
DRAIN CURRENT : ID (A)
Ta=25°C
VDD=15V
VGS=4.5V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
SWITCHING TIME : t (ns)
1000
Ta=25°C
Pulsed
1
VGS=2.5V
VGS=4V
VGS=4.5V
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1