Download STGW50HF60SD

STGW50HF60SD
60 A, 600 V, very low drop IGBT
with soft and fast recovery diode
Features
■
Very low on-state voltage drop
■
Low switching off
■
High current capability
■
Very soft ultra fast recovery antiparallel diode
Application
■
PV inverter
■
UPS
2
3
1
TO-247
Description
STGW50HF60SD is a very low drop IGBT based
on new advanced planar technology, showing
extremely low on-state voltage and limited turn-off
losses. The overall performance makes this IGBT
ideal in low frequency switches of mixed
frequency topologies for PF ≤1.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STGW50HF60SD
GW50HF60SD
TO-247
Tube
December 2010
Doc ID 16818 Rev 2
1/13
www.st.com
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13
Electrical ratings
1
STGW50HF60SD
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VCES
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
Continuous collector current at TC = 25 °C
110
A
IC
(1)
Continuous collector current at TC = 100 °C
60
A
ICL (2)
Turn-off latching current
60
A
(3)
Pulsed collector current
130
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
284
W
Diode RMS forward current at TC = 25 °C
30
A
Surge non repetitive forward current tp = 10 ms
sinusoidal
120
A
- 55 to 150
°C
ICP
IF
IFSM
Operating junction temperature
Tj
1.
Parameter
Calculated according to the iterative formula:
T j ( max ) – T C
I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )
2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
2/13
Thermal data
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case IGBT
0.44
°C/W
Rthj-case
Thermal resistance junction-case diode
1.25
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
°C/W
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STGW50HF60SD
2
Electrical characteristics
Electrical characteristics
(TJ=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
VCE(sat)
IC = 1 mA
Gate threshold voltage
VCE= VGE, IC= 250 µA
ICES
Collector cut-off current
(VGE = 0)
VCE =600 V
VCE =600 V, TJ=125 °C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE =± 20 V
Forward transconductance
VCE = 15 V, IC= 30 A
Table 5.
Symbol
Typ.
Max.
600
Unit
V
1.15
VGE= 15 V, IC= 30 A
Collector-emitter saturation
VGE= 15 V, IC= 30 A,
voltage
TJ =125 °C
VGE(th)
gfs
Min.
1.45
1.05
3.5
V
V
5.7
V
50
500
µA
µA
± 100
nA
25
S
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
4300
400
100
-
pF
pF
pF
-
200
27
90
-
nC
nC
nC
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz, VGE=0
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 480 V,
IC= 30 A,VGE=15 V
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3/13
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
(see Figure 15)
-
50
20
1280
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C (see Figure 15)
-
47
22
1100
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
(see Figure 15)
-
370
220
465
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C (see Figure 15)
-
700
250
800
-
ns
ns
ns
Min.
Typ.
Max.
Unit
Table 7.
Symbol
1.
STGW50HF60SD
Switching energy (inductive load)
Parameter
Test conditions
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
(see Figure 15)
-
0.25
4.2
4.45
-
mJ
mJ
mJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C (see Figure 15)
-
0.45
7.8
8.25
-
mJ
mJ
mJ
Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 15. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at
the same temperature (25°C and 125°C).
2. Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
4/13
Collector-emitter diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 30 A
IF = 30 A, TJ = 125 °C
-
2.8
1.8
-
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A, VR = 50 V,
di/dt = 100 A/µs
(see Figure 18)
-
67
140
4
-
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A, VR = 50 V,
TJ = 125 °C,
di/dt = 100 A/µs
(see Figure 18)
-
103
390
7
-
ns
nC
A
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STGW50HF60SD
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
AM0922v1
IC(A)
AM09222v1
IC (A)
VGE=15V
VGE=11V
120
100
120
100
VGE=10V
80
80
60
60
40
40
VGE=8V
20
0
0
Figure 4.
1
2
3
20
0
0
VCE(V)
Collector-emitter on voltage vs
temperature
AM08877v1
VCE(sat)
(V)
1.5
VCE=10V
Figure 5.
2
4
8
6
VGE(V)
10
Collector-emitter on voltage vs
collector current
AM08878v1
VCE(sat)
(V)
VGE=15V
1.7
1.4
IC=60A
1.5
VGE=15V
1.3
1.3
TJ=-50°C
1.2
1.1
1.1
TJ=25°C
1.0
IC=30A
0.9
0.9
IC=15A
0.7
TJ=125°C
0.5
0
20
0.8
-50
Figure 6.
50
0
100
TJ(°C)
Breakdown voltage vs temperature Figure 7.
AM08879v1
V(BR)CES
(V)
40
60
80
IC(A)
Gate threshold voltage vs
temperature
AM08880v1
VGE(th)
(norm)
VGE=VCE
IC = 1 mA
1.1
1.10
IC=250µA
1.0
1.05
0.9
1.00
0.8
0.95
0.90
-50
0.7
0
50
100
TJ(°C)
0.6
-50
0
50
Doc ID 16818 Rev 2
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100
TJ(°C)
5/13
Electrical characteristics
Figure 8.
STGW50HF60SD
Gate charge vs gate-emitter voltage Figure 9.
AM08881v1
VGE
(V)
Capacitance variations
AM08882v1
C
(pF)
Cies
VCC=480V
IC=30A
16
1000
12
f=1MHz
VGE=0
8
Coes
100
4
Cres
0
0
80
40
120
10
160
200
0.1
Qg(nC)
Figure 10. Switching losses vs collector
current
1
100
10
VCE(V)
Figure 11. Switching losses vs gate resistance
AM08883v1
E (µJ)
AM08884v1
E (µJ)
Eoff
VCC=400V, IC=30A
VGE=15V, TJ=125°C
Eoff
VCC=400V, RG=10Ω
VGE=15V, TJ=125°C
1000
1000
Eon
Eon
100
5
15
10
20
25
100
0
IC(A)
Figure 12. Switching losses vs temperature
AM08885v1
E (µJ)
Eoff
Figure 13.
20
40
60
80
RG(Ω)
Turn-off SOA
AM08886v1
IC
(A)
10
VCC=400V, IC=30A
VGE=15V, RG=10Ω
1
1000
Eon
100
25
6/13
RG=10Ω
VGE=15V
TJ=150°C
0.1
50
75
100
TJ(°C)
0.01
0.1
1
10
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100
VCE(V)
STGW50HF60SD
Electrical characteristics
Figure 14. Emitter-collector diode
characteristics
AM08887v1
IF
(A)
TJ =25°C
typical values
30
20
TJ =125°C
typical values
10
0
0
TJ =125°C
maximum values
1
2
3
4
VF(V)
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Test circuits
3
STGW50HF60SD
Test circuits
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
AM01504v1
Figure 17. Switching waveform
AM01505v1
Figure 18. Diode recovery time waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ta
tb
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
VF
dv/dt
AM01506v1
8/13
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AM01507v1
STGW50HF60SD
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Package mechanical data
Table 9.
STGW50HF60SD
TO-247 mechanical data
mm
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
10/13
Max.
5.50
Doc ID 16818 Rev 2
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STGW50HF60SD
Package mechanical data
Figure 19. TO-247 drawing
0075325_F
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Revision history
5
STGW50HF60SD
Revision history
Table 10.
12/13
Document revision history
Date
Revision
Changes
15-Jan-2010
1
Initial release.
21-Dec-2010
2
Document status promoted to datasheet.
Doc ID 16818 Rev 2
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STGW50HF60SD
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