Download STGF30H60DF

STGF30H60DF
600 V, 30 A high speed
trench gate field-stop IGBT
Datasheet − preliminary data
Features
■
High speed switching
■
Tight parameters distribution
■
Safe paralleling
■
6 µs short-circuit withstand time
■
Ultrafast soft recovery antiparallel diode
3
1
2
Applications
■
TO-220FP
Motor control
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STGF30H60DF
GF30H60DF
TO-220FP
Tube
October 2012
Doc ID 023791 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.bdtic.com/ST
1/9
www.st.com
9
Electrical ratings
1
STGF30H60DF
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
34
A
IC
Continuous collector current at TC = 100 °C
17
A
Pulsed collector current
68
A
Gate-emitter voltage
±20
V
Diode RMS forward current at TC = 25 °C
30
A
IFSM
Surge not repetitive forward current tp = 10 ms
sinusoidal
90
A
PTOT
Total dissipation at TC = 25 °C
31
W
Short-circuit withstand time at VCC = 400 V,
VGE = 15 V
6
µs
- 55 to 150
°C
VCES
ICP (1)
VGE
IF
tSC
TSTG
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
2/9
Storage temperature range
Operating junction temperature
TJ
1.
Parameter
Thermal data
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
4
°C/W
RthJC
Thermal resistance junction-case diode
5.6
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W
Doc ID 023791 Rev 1
www.bdtic.com/ST
STGF30H60DF
2
Electrical characteristics
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4.
Symbol
Static
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Typ.
Max.
600
Unit
V
VGE = 15 V, IC = 30 A
Collector-emitter saturation
VGE = 15 V, IC = 30 A
voltage
TJ = 150 °C
1.9
VCE(sat)
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 0.5 mA
6.0
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5.
Symbol
Cies
Coes
Cres
Qg
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 400 V, IC = 30 A,
VGE = 15 V
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Symbol
V
Dynamic
Total gate charge
Table 6.
V
2.2
Min.
Typ.
Max.
Unit
-
4200
120
75
-
pF
pF
pF
-
115
-
nC
-
TBD
-
nC
-
TBD
-
nC
Min.
Typ.
Max.
Unit
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
-
TBD
TBD
TBD
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
TJ = 150 °C
-
TBD
TBD
TBD
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
-
TBD
TBD
TBD
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
TJ = 150 °C
-
TBD
TBD
TBD
-
ns
ns
ns
Doc ID 023791 Rev 1
www.bdtic.com/ST
3/9
Electrical characteristics
Table 7.
Symbol
1.
STGF30H60DF
Switching energy (inductive load)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
-
TBD
TBD
TBD
-
mJ
mJ
mJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
TJ = 150 °C
-
TBD
TBD
TBD
-
mJ
mJ
mJ
Min.
Typ.
Max.
Unit
2.0
2.3
1.95
V
V
-
ns
nC
A
-
ns
nC
A
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
4/9
Collector-emitter diode
Parameter
Test conditions
VF
Forward on-voltage
IF = 30 A
IF = 30 A, TJ = 150 °C
-
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A,VR = 400 V,
di/dt = 100 A/µs
-
TBD
TBD
TBD
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A,VR = 400 V,
di/dt = 100 A/µs, TJ =150 °C
-
TBD
TBD
TBD
Doc ID 023791 Rev 1
www.bdtic.com/ST
STGF30H60DF
Test circuits
3
Test circuits
Figure 2.
Test circuit for inductive load
switching
Figure 3.
Gate charge test circuit
AM01504v1
Figure 4.
Switching waveform
AM01505v1
Figure 5.
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
VG
Diode recovery time waveform
ta
tb
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
VF
dv/dt
AM01506v1
Doc ID 023791 Rev 1
www.bdtic.com/ST
AM01507v1
5/9
Package mechanical data
4
STGF30H60DF
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
TO-220FP mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
6/9
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 023791 Rev 1
www.bdtic.com/ST
STGF30H60DF
Package mechanical data
Figure 6.
TO-220FP drawing
7012510_Rev_K_B
Doc ID 023791 Rev 1
www.bdtic.com/ST
7/9
Revision history
5
STGF30H60DF
Revision history
Table 10.
8/9
Document revision history
Date
Revision
16-Oct-2012
1
Changes
Initial release.
Doc ID 023791 Rev 1
www.bdtic.com/ST
STGF30H60DF
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 023791 Rev 1
www.bdtic.com/ST
9/9