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Symbol and Typical Values Parameter Name Symbol and Typical Values Parameter Name BVds Breakdown voltage ggs BV (off) 6V Offstate breakdown voltage Gate-to-source conductance ggd Cfd Drain-side feedback/ fringe capacitance Gate-to-drain conductance Gi Current gain gm Transconductance ds Cfs 150 fF/mm Source-side fringe capacitance g (max) mx Gate-to-channel parallel-plate capacitance at Vd 0 Cgc Maximum extrinsic transconductance 950 mSmm Gma Maximum available gain Gms Maximum stable gain Gu Unilateral power gain Gv Intrinsic low-voltage gain Id Drain current I (knee) Drain current at the onset of saturation Ig Gate current Cgd Gate-to-drain capacitance Cgs Gate-to-source capacitance dc Channel thickness dp Thickness of doped layer dgc 23 nm Gate-to-channel distance ε Dielectric constant of semiconductor Idss Saturated drain current at Vg = 0 Ec Channel drift field Lg = 120 nm Gate length Esat Field where velocity saturates ∆Li Extent of high-field penetration toward source fmag Cutoff frequency for Gma ∆Lx Extent of high-field penetration toward drain fmax = 350 GHz Cutoff frequency for Gu µ Electron mobility fT Cutoff frequency meff Electron effective mass f max Tx 190 GHz GHz,on-wfr) 16.8 dB G (12 a d I (max) d Maximum current gain cutoff frequency Maximum drain current 700 mAmm NF (12 GHz,on-wfr) 0.34 dB min Gain associated with NFmin Minimum noise figure at 12 GHz Nd Donor concentration gd Intrinsic FET Output conductance nso Full-channel sheet concentration gdo Intrinsic dc output conductance Φb Schottky barrier height Psat Saturated output power g (sat) dx Extrinsic output conductance in saturation P (60 GHz,2V) 200 mWmm sat Saturated output power at 60 GHz 45 mSmm • 1 • Symbol and Typical Values Parameter Name P–1dB Output power at 1 dB gain compression q Electron charge Rc = 0.15Ωmm Resistance of ohmic contacts Symbol and Typical Values Parameter Name τscatt Electron scattering time Vc Channel voltage Vd Drain voltage V (knee) Drain voltage at onset of velocity saturation d Rch Channel resistance Rd Drain resistance Vg Gate voltage Rs = 0.35Ωmm Source resistance vsat Saturation velocity Vsurf Effective surface gating voltage Vth = 0.35V Threshold voltage Wg Gate width (wfr) 60 mV Standard deviation of Vth over a wafer (wfr-to-wfr) 80 mV Standard deviation of the average Vth from wafer to wafer V th V th • Go to Appendix B Return to Article 4 Go to Next Article Go to Journal Home Page 2 •
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