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Open Project: High Frequency Power Converters for Utility Applications In the modern power electronics converter applications, the demands for reaching higher efficiency and higher power density are aligned with higher switching frequency over range of 1 MHz. Compared to silicon-based devices, GaN and SiC power chips operate at higher voltages, frequencies and temperatures, helping to eliminate up to 90% of the power losses in electricity conversion. Wide bandgap refers to higher voltage electronic band gaps in devices, which are larger than 1 electronvolt (eV). Theoretical limitation of silicon-based power converters in one side and the unique physical properties of GaN to operate with high power density in low voltage applications on the other side create a new era opened for high efficient converter applications. Objectives: The project deals with design, analysis and implementation of open-loop H-Bridge inverter with utilization of GaN transistors at 5MHz switching frequency for 300Watt output. The work includes: Simulation of H-Bridge inverter with GaN transistors in open-loop structure Design and Implementation of H-Bridge in to the Printed Circuit Board Successfully testing the prototype at 5 MHz switching frequency and 20A current. Requirements: A prior knowledge of power electronics and acquaintance with ORCAD (PSPICE/PCB layout) is desirable but not strictly mandatory. This work is suitable for students are belonging to the discipline of Electrical and computer Engineering. Project Outcome: By performin this project the student can gain knowledge about challenges of designing H-Bridge inverter with GaN technologies. She/he can also learn hardware part as well as software part, unique experimental experiences and working in a well-equipped lab are other advantages of this project. The start time was 15th April 2015 Supervised by: Dr. Babak Parkhideh, Assistant Professor of ECE Project Mentor: Mehrdad Biglarbegian, PhD student For more information please contact: [email protected]