Download to U217B datasheet.

U217B/ U217B-FP
Zero Voltage Switch with Adjustable Ramp
Description
The integrated circuit, U217B, is designed as a zerovoltage switch in bipolar technology. It is used to control
resistive loads at mains by a triac in zero-crossing mode.
A ramp generator allows to realize power control function
by period group control, whereas full wave logic
guarantees that full mains cycles are used for load
switching.
Features
Applications
D
D
D
D
D Full wave power control
D Temperature regulation
D Power blinking switch
D
D
D
D
Direct supply from the mains
Current consumption ≤ 0.5 mA
Very few external components
Full wave drive – no dc current component in the load
circuit
Negative output current pulse typ. 100 mA –
short circuit protected
Simple power control
Ramp generator
Reference voltage
Package: DIP8, SO8
Block Diagram
95 10872
D1
220 kW
(250 V~)
R4
C2
2
R2
(Rsync)
8
R1
18 kW/
2W
Load
1000 W
C1
100 mF/
16 V
5
100 kW
2.2 mF/
10 V
1
Ramp
generator
7
Synchronization
Supply
GND
R5
15 kW
max
+
+
– Comparator
TIC
236N
6
100 W
Full wave logic
100 kW
R6
VM =
230 V~
MT2
3
4
min
L
BYT86/800
Pulse
amplifier
R3
MT1
G
Reference voltage
1.25 V
58 kW
N
Figure 1. Block diagram with typical circuit, period group control 0 to 100%
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
1 (11)
U217B/ U217B-FP
General Description
Firing Pulse Width tp, (Figure 4)
The integrated circuit, U217B, is a triac controller for the
zero crossing mode. It is meant to control power in
switching resistive loads of mains supply.
This depends on the latching current of the triac and its
load current. The firing pulse width is determined by the
zero crossing identification which can be influenced with
the help of sync. resistance, Rsync, (figure 6).
To avoid dc load on the mains, full wave logic guarantees
that complete mains cycles are used for load switching.
A fire pulse is released when the inverted input of the
comparator is negative (Pin 4) with respect to the non–
inverted input (Pin 3) and internal reference voltage.
A ramp generator with free selectable duration is possible
with capacitor C2 at Pin 2 which provides not only
symmetrical pulse burst control (figure 3), but also
control with superimposed proportional band (figure 10).
Ramp voltage available at capacitor C2 is decoupled
across emitter follower at Pin l. To maintain the lamp
flicker specification, ramp duration is adjusted according
to the controlling load. In practice, interference should be
avoided (temperature control). Therefore in such cases a
two point control is preferred to proportional control. One
can use internal reference voltage for simple applications.
In that case Pin 3 is inactive and connected to Pin 7
(GND), figure 9.
95 11306
2
tp =
w
whereas
=
IL
VM =
P
=
IL
arc. sin
Ǹ
VM
P 2
Latching current of the triac
Mains supply, effective
Power load (user’s power)
Total current consumption is influenced by the firing
pulse width, which can be calculated as follows:
+
R sync
Ǹ
V M 2 sin (w
2 )–0.6 V
–49 kW
3.5
10–5A
tp
10.00
Vmains = 230 V∼
1.00
t p ( ms )
Information regarding supply sync. is provided at Pin 8
via resistor RSync.
IL ( mA)
0.10
200
100
Ramp
control
1
50
0.01
10
100
1000
10000
P(W)
96 11939
Figure 4.
2
–VS
C2
2000
1600
t
V1
Final voltage
Vmin
1.4 V
RSync ( kW )
Figure 2. Pin 1 internal network
VM=230V AC
Tamb=25°C
1200
800
400
7.3 V
–VS(Pin5)
95 11307
Figure 3.
2 (11)
Initial voltage
Vmax
T
0
0
95 9978
300
600
900
tp ( ms )
1200
1500
Figure 5.
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
U217B/ U217B-FP
Triac Firing Current (Pulse)
Supply Voltage
This depends on the triac requirement. It can be limited
with gate series resistance which is calculated as follows:
The integrated circuit U217B (which also contains
internal voltage limiting) can be connected via the diode
(D1) and the resistor (R1) with the mains supply. An
internal climb circuit limits the voltage between Pin 5 and
7 to a typical value of 9.25 V.
RGmax
Series resistance R1 can be calculated (figures 7 and 8) as
follows:
7.5 V – VGmax – 36 W
IGmax
R1max = 0.85
IP =
IGmax
tp
T
50
6
VMains=230V
5
VMains=230V
X
2 R1
X
4
PR1 ( W )
40
R 1 ( kW )
(VM – VS)2
Itot
= IS + IP + Ix
whereas
VM = Mains voltage
= Limiting voltage of the IC
VS
= Total current consumption
Itot
= Current requirement of the IC (without load)
IS
= Current requirement of other peripheral
Ix
components
P(R1) = Power dissipation at R1
whereas:
= Gate voltage
VG
IGmax = Max. gate current
= Average gate current
Ip
= Firing pulse width
tp
T
= Mains period duration
30
20
3
2
10
1
0
0
0
95 10114
Vmin – VSmax
; P(R1) =
2 Itot
3
6
9
Itot ( mA )
Figure 6.
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
12
15
0
95 10116
3
6
9
12
15
Itot ( mA )
Figure 7.
3 (11)
U217B/ U217B-FP
Absolute Maximum Ratings
Reference point Pin 7
Parameters
Supply current
Sync. current
Output current ramp generator
Input voltages
Pin 5
Pin 8
Pin 1
Pin 1, 3, 4, 6
Pin 2
Pin 8
Symbol
–IS
ISync.
IO
–VI
–VI
±VI
Value
30
5
3
≤VS
2 to VS
≤ 7.3
Unit
mA
mA
mA
V
Ptot
mW
Tj
Tamb
Tstg
400
125
125
0 to 100
–40 to + 125
Symbol
RthJA
Maximum
200
Unit
K/W
Power dissipation
Tambb = 45°C
Tamb = 100°C
Junction temperature
Operating-ambient temperature range
Storage temperature range
°C
°C
°C
Thermal Resistance
Parameters
Junction ambient
Electrical Characteristics
–VS = 8.5 V, Tamb = 25°C, reference point Pin 7, unless otherwise specified
Parameters
Supply voltage limitation
Supply current
Voltage limitation
Synchronous current
Zero detector
Output pulse width
Test Conditions / Pin
–IS = 5 mA
Pin 5
Pin 5
I8 = ± 1 mA
Pin 8
Pin 8
VM= 230 V ,
Rsync = 220 kW
Rsync = 470 kW
V6 = 0 V
Pin 6
Output pulse current
Comparator
Input offset voltage
Pin 3,4
Input bias current
Pin 4
Common mode input
Pin 3,4
voltage
Threshold internal
V3 = 0 V
Pin 4
reference
Ramp generator, Pin 1, figure 1
Period
–IS= 1 mA, Isync =1 mA,
C1 = 100 mF, C2 = 1 mF,
R4= 100 kW
Final voltage
Initial voltage
Charge current
V2 = 0 V, I8 = –1 mA Pin 2
4 (11)
Symbol
–VS
–IS
± VI
±Isync
±Isync
Min
8.6
7.5
0.12
VI0
IIB
–VIC
100
–I2
mA
5
1
15
1
(VS–1)
1.25
0.9
6.8
13
Unit
V
mA
V
mA
mA
ms
260
460
–VT
T
V1
Max
9.9
500
8.7
35
tP
–IO
Typ
9.25
1.5
1.40
7.3
17
mV
mA
V
V
1.80
7.8
26
s
V
mA
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
U217B/ U217B-FP
Applications
L
RL
Load
270 kW
BYT86/800
VM = 230 V ~
18 kW
1.5 W
56 W
N
VDR
+5 V
8
6
7
5
CNY21
U217B
1
2
3
4
47 mF/
10 V
56 kW
II 1.5 mA
39 kW
VI
95 11308
Figure 8. Power switch
95 11309
2.2 mF/
10 V
R8
R4
470 kW
100 kW
BC237
NTC/M87
B value =
3988
R(25)
100 kW
100 kW
R5
8
R1
18 kW/
2W
Load
1000 W
C1
5
150 W
VM =
230 V~
7
Ramp
generator
Synchronization
+
+
–
Full wave logic
Supply
3
R9
220 kW
R2
(Rsync)
L
BYT86/800
1)
4
Rp
220 kW
(250 V~)
2
1
R6
D1
C2
6
Comparator
Pulse
amplifier
100 W
R3
Reference voltage
1.25 V
R7
130 kW
N
Figure 9. Temperature control 15 to 35°C with sensor monitoring
NTC–Sensor M 87 Fabr. Siemens
R(25) =100 kW/B =3988 ⇒
R(15) = 159 kW
R(35) = 64.5 kW
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
R51) determines the proportional range
5 (11)
U217B/ U217B-FP
L
0.5 ...
2.2 kW
VM= 230 V ~
N
270 kW
BYT86/800
100 nF/
250 V ~
18 kW/
1.5 W
56 W
82 W
8
7
6
5
U217B
1
150 kW
47 mF/ 16V
2
3
4
110 kW
0.47 mF/
10 V
95 11310
Figure 10. Power blinking switch with f
6 (11)
2.7 Hz, duty cycle 1:1, power range 0.5 to 2.2 kW
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
U217B/ U217B-FP
L
–DT
BYT86/800
Load
1N4148
R1
0.35 ...
1.5 kW
R4
510 kW
680 kW
R5
VM = 230 V ~
680 kW
R2
N
13 kW/2 W
R3
62 W
IH = 50 mA
1N4148
8
7
6
R16
5
220 kW
R6
U217B
9.1 kW
R7
1
R10
910 kW
2
3
R15
C3
R9
C4
100 mF/
12 V
47 mF
25 kW
10 nF
C1
NTC
33 kW
12 kW
C5
12 kW
4
R8
56 kW
2.2 mF
C2
1 mF
95 11311
Figure 11. Room temperature control with definite reduction (remote control) for a temperature range 5 to 30°C
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
7 (11)
U217B/ U217B-FP
L
220 kW
Load/ 1000 W
BYT51G
VM = 230 V ~
18 kW
1.5 W
56 W
VDR
N
8
7
6
5
220 kW
(680 kW)
U217B
1
2
3
4
10 nF
68 mF/
10 V
500 kW
(2 MW)
50 kW
(200 kW)
NTC
95 11312
Figure 12. Two–point temperature control for a temperature range 15 to 30°C
8 (11)
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
U217B/ U217B-FP
L
D1
Rsync
BYT51G
430 kW
Load/400 W
VM = 230 V~
R1
18 kW/
1.5 W
92 W
N
R3
8
6
7
5
NTC
U217B
200 kW
D2
1N4148
1
2
3
4
R6
R15/ 50 kW
27 kW
330 kW
R4/ 39 kW
R5
R7/ 8.2 kW
C2
150 nF
C3
33 mF/
10 V
C1
68 mF/
10 V
95 11313
Figure 13. Two-point temperature control for a temperature range 18 to 32°C and hysteresis of ± 0.5°C at 25°C
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
9 (11)
U217B/ U217B-FP
Dimension in mm
Package: DIP8
94 8873
Package: SO8
94 8862
10 (11)
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
U217B/ U217B-FP
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TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
11 (11)