Download Michelly de Souza received the Electrical Engineering degree from

Title: SOI Technology – Fundamentals and Advantages over Convencional MOS
Technology
Abstract: In this presentation the basic concepts of MOS transistors implemented in SOI
(Silicon-On-Insulator) substrates will be presented, showing the need of this technological
alternative to allow for the continuing downscaling of transistors dimensions. The main
electrical characteristics of SOI transistors will be shown, comparing them to the
performance of conventional MOS transistors. Examples of SOI MOSFETs application in
state-of-art high performance microprocessors as well as in low power circuits will be
shown. Some new architectures of MOS transistors implemented in SOI technology will
also be presented.
Michelly de Souza received the Electrical Engineering degree from Centro Universitário
da FEI in 2002, and the M. Sc. and Ph. D. degrees in 2005 and 2008, respectively, in
Microelectronics from University of São Paulo, Brazil. From September 2007 to February
2008 she was with Laboratoire de Microélectronique from Université Catholique de
Louvain (UCL), Belgium, working in the fabrication and electrical characterization of
analog circuits with novel Silicon-On-Insulator (SOI) transistors. She is currently with
Centro Universitário da FEI, Brazil, as a post-doctoral researcher and professor. She is
Member of IEEE EDS and SSCS, and the Brazilian Microelectronics Society. Her current
interests are the electrical characterization, simulation and modeling of SOI devices, and
design of analog cells using novel SOI devices.