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Mechanical Behaviour of Systems at Small Length Scales SIMULATION OF EPITAXIAL GROWTH AND FORMATION OF INTERFACIAL DISLOCATIONS BY FINITE ELEMENT METHOD Amit Walavekar, Rajib Chandra Das, Puneet Mahajan and Anandh Subramaniam* Indian Institute of Technology, New Delhi 110016, India Abstract This work pertains to finite element analysis of the stress-state in epitaxial thin films as a function of the thickness and the release of the elastic energy by the nucleation of interfacial dislocations. In this work, the film and the substrate will be treated as continua. The initial mesh configuration will consist of a substrate of a semiconductor or metallic material over which successive layers of another metal or semiconductor are built numerically. This is done by imposing the coherency at the interface through a lattice misfit strain (stress free Eshelby strain). This simulation is repeated for successive build-up of the layers to simulate the growth of the film. Independently the stress state of an edge dislocation will be simulated by Finite element method. A combined simulation will be used to calculate the equilibrium critical thickness for the nucleation of a dislocation. Commercially available packages will be used for the simulations. Key words: Epitaxial thin films; Critical thickness; Finite element method * Presenting Author