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TAS5630
www.ti.com
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
300-W STEREO / 600-W MONO PurePath™ HD ANALOG-INPUT POWER STAGE
Check for Samples: TAS5630
FEATURES
APPLICATIONS
•
•
•
•
•
1
23
•
•
•
•
•
•
PurePath™ HD Enabled Integrated Feedback
Provides:
– Signal Bandwidth up to 80 kHz for
High-Frequency Content From HD Sources
– Ultralow 0.03% THD at 1 W into 4 Ω
– Flat THD at all Frequencies for Natural
Sound
– 80-dB PSRR (BTL, No Input Signal)
– >100-dB (A-weighted) SNR
– Click- and Pop-Free Start-Up
Multiple Configurations Possible on the Same
PCB With Stuffing Options:
– Mono Parallel Bridge-Tied Load (PBTL)
– Stereo Bridge-Tied Load (BTL)
– 2.1 Single-Ended Stereo Pair and
Bridge-Tied Load Subwoofer
– Quad Single-Ended Outputs
Total Output Power at 10% THD+N
– 600 W in Mono PBTL Configuration
– 300 W per Channel in Stereo BTL
Configuration
– 145 W per Channel in Quad Single-Ended
Configuration
High-Efficiency Power Stage (>88%) With
60-mΩ Output MOSFETs
Two Thermally Enhanced Package Options:
– PHD (64-Pin QFP)
– DKD (44-Pin PSOP3)
Self-Protection Design (Including
Undervoltage, Overtemperature, Clipping, and
Short-Circuit Protection) With Error Reporting
EMI Compliant When Used With
Recommended System Design
Mini Combo System
AV Receivers
DVD Receivers
Active Speakers
DESCRIPTION
The TAS5630 is a high-performance analog-input
class-D amplifier with integrated closed-loop
feedback technology (known as PurePath HD
technology) with the ability to drive up to 300 W (1)
stereo into 4-Ω to 8-Ω speakers from a single 50-V
supply.
PurePath HD technology enables traditional
AB-amplifier performance (<0.03% THD) levels while
providing the power efficiency of traditional class-D
amplifiers.
Unlike traditional class-D amplifiers, the distortion
curve only increases once the output levels move into
clipping. PurePath HD™
PurePath HD technology enables lower idle losses,
making the device even more efficient. Coupled with
TI’s class-G power-supply reference design for
TAS563x, industry-leading levels of efficiency can be
achieved.
3 ´ OPA1632
♫♪
TM
ANALOG
AUDIO
INPUT
PurePath HD
TAS5630
(2.1 Configuration)
♫♪
♫♪
±15 V
12 V
25 V–50 V
TM
PurePath HD
Class-G Power Supply
Ref. Design
110 VAC ® 240 VAC
(1)
Achievable output power levels are dependent on the thermal
configuration of the target application. A high-performance
thermal interface material between the exposed package heat
slug and the heat sink should be used to achieve high output
power levels.
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PurePath HD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated
TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DEVICE INFORMATION
Terminal Assignment
The TAS5630 is available in two thermally enhanced packages:
• 64-Pin QFP (PHD) power package
• 44-Pin PSOP3 package (DKD)
The package types contain heat slugs that are located on the top side of the device for convenient thermal
coupling to the heat sink.
DKD PACKAGE
(TOP VIEW)
64-pins QFP package
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
GND_A
GND_B
GND_B
OUT_B
OUT_B
PVDD_B
PVDD_B
BST_B
BST_C
PVDD_C
PVDD_C
OUT_C
OUT_C
GND_C
GND_C
GND_D
OTW2
CLIP
READY
M1
M2
M3
GND
GND
GVDD_C
GVDD_D
BST_D
OUT_D
OUT_D
PVDD_D
PVDD_D
GND_D
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PSU_REF
VDD
OC_ADJ
RESET
C_STARTUP
INPUT_A
INPUT_B
VI_CM
GND
AGND
VREG
INPUT_C
INPUT_D
FREQ_ADJ
OSC_IO+
OSC_IOSD
OTW
READY
M1
M2
M3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 pins PACKAGE
(TOP VIEW)
OC_ADJ
RESET
C_STARTUP
INPUT_A
INPUT_B
VI_CM
GND
AGND
VREG
INPUT_C
INPUT_D
FREQ_ADJ
OSC_IO+
OSC_IOSD
OTW1
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
VDD
PSU_REF
NC
NC
NC
NC
GND
GND
GVDD_B
GVDD_A
BST_A
OUT_A
OUT_A
PVDD_A
PVDD_A
GND_A
PHD PACKAGE
(TOP VIEW)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
GVDD_AB
BST_A
PVDD_A
PVDD_A
OUT_A
OUT_A
GND_A
GND_B
OUT_B
PVDD_B
BST_B
BST_C
PVDD_C
OUT_C
GND_C
GND_D
OUT_D
OUT_D
PVDD_D
PVDD_D
BST_D
GVDD_CD
PIN ONE LOCATION PHD PACKAGE
Electrical Pin 1
Pin 1 Marker
White Dot
2
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): TAS5630
TAS5630
www.ti.com
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
MODE SELECTION PINS
MODE PINS
ANALOG INPUT
OUTPUT
CONFIGURATION
0
Differential
2 × BTL
AD mode
1
—
—
Reserved
0
Differential
2 × BTL
BD mode
1 × BTL +2 ×SE
4 × SE
M3
M2
M1
0
0
0
0
0
1
0
1
1
Differential
single-ended
1
0
0
Single-ended
DESCRIPTION
BD mode, BTL differential
AD mode
INPUT_C
1
(1)
0
1
1
1
0
1
1
1
Differential
1 × PBTL
(1)
INPUT_D
(1)
0
0
AD mode
1
0
BD mode
Reserved
INPUT_C and D are used to select between a subset of AD and BD mode operations in PBTL mode (1=VREG and 0=AGND).
PACKAGE HEAT DISSIPATION RATINGS (1)
PARAMETER
TAS5630PHD
RqJC (°C/W) – 2 BTL or 4 SE channels
2.63
1.4
RqJC (°C/W) – 1 BTL or 2 SE channel(s)
4.13
2.04
RqJC (°C/W) – 1 SE channel
Pad area
(1)
(2)
(2)
TAS5630DKD
6.45
3.45
64 mm2
80 mm2
RqJC is junction-to-case, RqCH is case-to-heat sink
RqCH is an important consideration. Assume a 2-mil (0.051-mm) thickness of thermal grease with a thermal conductivity of 2.5 W/mK
between the pad area and the heat sink and both channels active. The RqCH with this condition is 1.1°C/W for the PHD package and
0.44°C/W for the DKD package.
Table 1. ORDERING INFORMATION (1)
(1)
TA
PACKAGE
DESCRIPTION
0°C–70°C
TAS5630PHD
64-pin HTQFP
0°C–70°C
TAS5630DKD
44-pin PSOP3
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
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TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
www.ti.com
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
VALUE
UNIT
VDD to AGND
–0.3 to 13.2
V
GVDD to AGND
–0.3 to 13.2
V
–0.3 to 69
V
PVDD_X to GND_X (2)
OUT_X to GND_X
(2)
–0.3 to 69
V
–0.3 to 82.2
V
BST_X to GVDD_X (2)
–0.3 to 69
V
VREG to AGND
–0.3 to 4.2
V
GND_X to GND
–0.3 to 0.3
V
GND_X to AGND
–0.3 to 0.3
V
OC_ADJ, M1, M2, M3, OSC_IO+, OSC_IO–, FREQ_ADJ, VI_CM, C_STARTUP,
PSU_REF to AGND
–0.3 to 4.2
V
INPUT_X
–0.3 to 5
V
RESET, SD, OTW1, OTW2, CLIP, READY to AGND
–0.3 to 7
V
BST_X to GND_X (2)
Continuous sink current (SD, OTW1, OTW2, CLIP, READY)
Operating junction temperature range, TJ
Storage temperature, Tstg
Electrostatic discharge
(1)
(2)
(3)
Human-body model
(3)
(all pins)
Charged-device model (3) (all pins)
9
mA
0 to 150
°C
–40 to 150
°C
±2
kV
±500
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
These voltages represents the dc voltage + peak ac waveform measured at the terminal of the device in all conditions.
Failure to follow good anti-static ESD handling during manufacture and rework contributes to device malfunction. Ensure operators
handling the device are adequately grounded through the use of ground straps or alternative ESD protection.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MAX
UNIT
PVDD_x
Half-bridge supply
DC supply voltage
MIN NOM
25
50
52.5
V
GVDD_x
Supply for logic regulators and gate-drive
circuitry
DC supply voltage
10.8
12
13.2
V
VDD
Digital regulator supply voltage
DC supply voltage
10.8
12
13.2
V
3.5
4
1.8
2
1.6
2
7
10
7
15
7
10
Nominal
385
400
415
AM1
315
333
350
AM2
260
300
335
RL(BTL)
RL(SE)
Output filter according to schematics in
the application information section
Load impedance
RL(PBTL)
LOUTPUT(BTL)
LOUTPUT(SE)
Output filter inductance
Minimum output inductance at IOC
LOUTPUT(PBTL)
PWM frame rate selectable for AM
interference avoidance; 1% resistor
tolerance.
fPWM
Nominal; master mode
RFREQ_ADJ
PWM frame-rate-programming resistor
VFREQ_ADJ
Voltage on FREQ_ADJ pin for slave mode
operation
TJ
Junction temperature
4
Ω
mH
9.9
10
10.1
AM1; master mode
19.8
20
20.2
AM2; master mode
29.7
30
30.3
Slave mode
3.3
0
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kHz
kΩ
V
150
°C
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): TAS5630
TAS5630
www.ti.com
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
PIN FUNCTIONS
PIN
Function (1)
DESCRIPTION
10
P
Analog ground
54
43
P
HS bootstrap supply (BST), external 0.033-mF capacitor to OUT_A required.
41
34
P
HS bootstrap supply (BST), external 0.033-mF capacitor to OUT_B required.
BST_C
40
33
P
HS bootstrap supply (BST), external 0.033-mF capacitor to OUT_C required.
BST_D
27
24
P
HS bootstrap supply (BST), external 0.033-mF capacitor to OUT_D required.
CLIP
18
—
O
Clipping warning; open drain; active-low
C_STARTUP
3
5
O
Start-up ramp requires a charging capacitor of 4.7 nF to AGND in BTL mode
FREQ_ADJ
12
14
I
PWM frame-rate-programming pin requires resistor to AGND
7, 23, 24, 57,
58
9
P
Ground
GND_A
48, 49
38
P
Power ground for half-bridge A
GND_B
46, 47
37
P
Power ground for half-bridge B
GND_C
34, 35
30
P
Power ground for half-bridge C
GND_D
32, 33
29
P
Power ground for half-bridge D
GVDD_A
55
—
P
Gate-drive voltage supply requires 0.1-mF capacitor to GND_A
GVDD_B
56
—
P
Gate drive voltage supply requires 0.1-mF capacitor to GND_B
GVDD_C
25
—
P
Gate drive voltage supply requires 0.1-mF capacitor to GND_C
GVDD_D
26
—
P
Gate drive voltage supply requires 0.1-mF capacitor to GND_D
GVDD_AB
—
44
P
Gate drive voltage supply requires 0.22-mF capacitor to GND_A/GND_B
GVDD_CD
—
23
P
Gate drive voltage supply requires 0.22-mF capacitor to GND_C/GND_D
INPUT_A
4
6
I
Input signal for half-bridge A
INPUT_B
5
7
I
Input signal for half-bridge B
INPUT_C
10
12
I
Input signal for half-bridge C
INPUT_D
11
13
I
Input signal for half-bridge D
M1
20
20
I
Mode selection
M2
21
21
I
Mode selection
M3
22
22
I
Mode selection
NC
59–62
–
—
No connect; pins may be grounded.
OC_ADJ
1
3
O
Analog overcurrent-programming pin requires resistor to AGND. 64-pin
package (PHD) = 22 kΩ. 44-pin PSOP3 (DKD) = 24 kΩ
OSC_IO+
13
15
I/O
Oscillator master/slave output/input
OSC_IO–
14
16
I/O
Oscillator master/slave output/input
OTW
—
18
O
Overtemperature warning signal, open-drain, active-low
OTW1
16
—
O
Overtemperature warning signal, open-drain, active-low
OTW2
17
—
O
Overtemperature warning signal, open-drain, active-low
OUT_A
52, 53
39, 40
O
Output, half-bridge A
OUT_B
44, 45
36
O
Output, half-bridge B
OUT_C
36, 37
31
O
Output, half-bridge C
OUT_D
28, 29
27, 28
O
Output, half-bridge D
63
1
P
PSU reference requires close decoupling of 330 pF to AGND.
PVDD_A
50, 51
41, 42
P
Power-supply input for half-bridge A requires close decoupling of 0.01-mF
capacitor in parallel with 2.2-mF capacitor to GND_A.
PVDD_B
42, 43
35
P
Power-supply input for half-bridge B requires close decoupling of 0.01-mF
capacitor in parallel with 2.2-mF capacitor to GND_B.
PVDD_C
38, 39
32
P
Power-supply input for half-bridge C requires close decoupling of 0.0- mF
capacitor in parallel with 2.2-mF capacitor to GND_C.
NAME
PHD NO.
DKD NO.
AGND
8
BST_A
BST_B
GND
PSU_REF
(1)
I = Input, O = Output, P = Power
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TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
www.ti.com
PIN FUNCTIONS (continued)
PIN
NAME
Function (1)
DESCRIPTION
PHD NO.
DKD NO.
30, 31
25, 26
P
Power-supply input for half-bridge D requires close decoupling of 0.01-mF
capacitor in parallel with 2.2-mF capacitor to GND_D.
READY
19
19
O
Normal operation; open-drain; active-high
RESET
2
4
I
Device reset input; active-low
SD
15
17
O
Shutdown signal, open-drain, active-low
VDD
64
2
P
Power supply for digital voltage regulator requires a 10-mF capacitor in parallel
with a 0.1-mF capacitor to GND for decoupling.
VI_CM
6
8
O
Analog comparator reference node requires close decoupling of 1 nF to
AGND.
VREG
9
11
P
Digital regulator supply filter pin requires 0.1-mF capacitor to AGND.
PVDD_D
6
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TAS5630
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SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
TYPICAL SYSTEM BLOCK DIAGRAM
ANALOG_IN_B
OSC_IO-
BST_A
VI_CM
/CLIP
READY
BST_B
OUT_A
INPUT_A
Input DC
Blocking
Caps
ANALOG_IN_A
OSC_IO+
C_STARTUP
Oscillator
Synchronization
/OTW1, /OTW2, /OTW
/SD
/RESET
(2)
PSU_REF
Caps for
External
Filtering
&
Startup/Stop
System
microcontroller
or
Analog circuitry
Input
H-Bridge 1
INPUT_B
Output
H-Bridge 1
2
OUT_B
2
Hardwire
PWM Frame
Rate Adjust
&
Master/Slave
Mode
ANALOG_IN_D
nd
OUT_C
Output
H-Bridge 2
Input
H-Bridge 2
INPUT_D
2
OUT_D
8
50V
PVDD
12V
PVDD
Power Supply
Decoupling
SYSTEM
Power
Supplies
GND
8
BST_D
OC_ADJ
VREG
AGND
VDD
M3
2 Order
L-C Output
Filter for
each
H-Bridge
BST_C
GND
M2
GND_A, B, C, D
PVDD_A, B, C, D
M1
GVDD_A, B, C, D
2
Hardwire
Mode
Control
nd
2 Order
L-C Output
Filter for
each
H-Bridge
2-CHANNEL
H -BRIDGE
BTL MODE
INPUT_C
Input DC
Blocking
Caps
ANALOG_IN_C
FREQ_ADJ
Bootstrap
Caps
Bootstrap
Caps
4
GVDD, VDD,
& VREG
Power Supply
Decoupling
Hardwire
OverCurrent
Limit
GND
GVDD (12V)/VDD (12V)
VAC
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TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
www.ti.com
FUNCTIONAL BLOCK DIAGRAM
/CLIP
READY
/OTW1
/OTW2
/SD
PROTECTION & I/O LOGIC
M1
M2
M3
/RESET
C_STARTUP
VDD
POWER-UP
RESET
UVP
VREG
VREG
AGND
TEMP
SENSE
STARTUP
CONTROL
GVDD_A
GVDD _C
GVDD_B
OVER-LOAD
PROTECTION
GND
GVDD_D
CURRENT
SENSE
CB3C
OC_ADJ
OSC_SYNC_IO+
OSC_SYNC_IO-
4
OSCILLATOR
PPSC
FREQ_ADJ
4
4
PVDD_X
OUT_X
GND_X
GVDD_A
PWM
ACTIVITY
DETECTOR
4
PSU_REF
BST_A
PVDD_A
PVDD_X
PSU_FF
VI_CM
GND
PWM
RECEIVER
CONTROL
TIMING
CONTROL
GATE-DRIVE
OUT_A
GND_A
GVDD_B
INPUT_A
BST_B
ANALOG
LOOP FILTER
+
PVDD_B
+
ANALOG
LOOP FILTER
-
+
ANALOG COMPARATOR MUX
INPUT_C
ANALOG
LOOP FILTER
ANALOG INPUT MUX
INPUT_B
PWM
RECEIVER
CONTROL
TIMING
CONTROL
GATE-DRIVE
OUT_B
GND_B
GVDD_C
BST_C
PVDD_C
PWM
RECEIVER
CONTROL
TIMING
CONTROL
GATE-DRIVE
OUT_C
+
INPUT_D
ANALOG
LOOP FILTER
GND_C
-
GVDD_D
BST_D
PVDD_D
PWM
RECEIVER
CONTROL
TIMING
CONTROL
GATE-DRIVE
OUT_D
GND_D
8
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TAS5630
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SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
AUDIO CHARACTERISTICS (BTL)
PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_X = 50 V,
GVDD_X = 12 V, RL = 4 Ω, fS = 400 kHz, ROC = 22 kΩ, TC = 75°C; output filter: LDEM = 7 mH, CDEM = 680 nF,
MODE = 010, unless otherwise noted.
PARAMETER
PO
TEST CONDITIONS
Power output per channel
MIN
TYP MAX
RL = 4 Ω, 10% THD+N, clipped output signal
300
RL = 6 Ω, 10% THD+N, clipped output signal
210
RL = 8 Ω, 10% THD+N, clipped output signal
160
RL = 4 Ω, 1% THD+N, unclipped output signal
240
RL = 6 Ω, 1% THD+N, unclipped output signal
160
RL = 8 Ω, 1% THD+N, unclipped output signal
UNIT
W
125
THD+N
Total harmonic distortion + noise
1W
Vn
Output integrated noise
A-weighted, AES17 filter, input capacitor
grounded
|VOS|
Output offset voltage
Inputs ac-coupled to AGND
SNR
Signal-to-noise ratio (1)
A-weighted, AES17 filter
100
dB
DNR
Dynamic range
A-weighted, AES17 filter
100
dB
Pidle
Power dissipation due to idle losses (IPVDD_X)
PO = 0, four channels switching (2)
2.7
W
(1)
(2)
0.03%
270
40
mV
150
mV
SNR is calculated relative to 1% THD+N output level.
Actual system idle losses also are affected by core losses of output inductors.
AUDIO SPECIFICATION (Single-Ended Output)
PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1kHz, PVDD_X = 50 V,
GVDD_X = 12 V, RL = 4 Ω, fS = 400 kHz, ROC = 22 kΩ, TC = 75°C; output filter: LDEM = 15 mH, CDEM = 470 mF,
MODE = 100, unless otherwise noted.
PARAMETER
PO
TEST CONDITIONS
Power output per channel
MIN
TYP MAX
RL = 2 Ω, 10% THD+N, clipped output signal
145
RL = 3 Ω, 10% THD+N, clipped output signal
100
RL = 4 Ω, 10% THD+N, clipped output signal
75
RL = 2 Ω, 1% THD+N, unclipped output signal
110
RL = 3 Ω, 1% THD+N, unclipped output signal
75
RL = 4 Ω, 1% THD+N, unclipped output signal
55
UNIT
W
THD+N
Total harmonic distortion + noise
1W
Vn
Output integrated noise
A-weighted, AES17 filter, input capacitor grounded
340
mV
SNR
Signal-to-noise ratio (1)
A-weighted, AES17 filter
93
dB
DNR
Dynamic range
A-weighted, AES17 filter
93
dB
2
W
Pidle
(1)
(2)
Power dissipation due to idle losses (IPVDD_X)
PO = 0, four channels switching
0.07%
(2)
SNR is calculated relative to 1% THD+N output level.
Actual system idle losses are affected by core losses of output inductors.
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AUDIO SPECIFICATION (PBTL)
PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_X = 50 V,
GVDD_X = 12 V, RL = 2 Ω, fS = 400 kHz, ROC = 22 kΩ, TC = 75°C; output filter: LDEM = 7 mH, CDEM = 1.5 mF,
MODE = 101-10, unless otherwise noted.
PARAMETER
PO
TEST CONDITIONS
Power output per channel
MIN
TYP MAX
RL = 2 Ω, 10% THD+N, clipped output signal
600
RL = 3 Ω, 10% THD+N, clipped output signal
400
RL = 4 Ω, 10% THD+N, clipped output signal
300
RL = 2 Ω, 1% THD+N, unclipped output signal
480
RL = 3 Ω, 1% THD+N, unclipped output signal
310
RL = 4 Ω, 1% THD+N, unclipped output signal
UNIT
W
230
THD+N
Total harmonic distortion + noise
1W
Vn
Output integrated noise
A-weighted
260
mV
A-weighted
100
dB
A-weighted
100
dB
2.7
W
(1)
0.05%
SNR
Signal to noise ratio
DNR
Dynamic range
Pidle
Power dissipation due to idle losses (IPVDD_X) PO = 0, four channels switching (2)
(1)
(2)
SNR is calculated relative to 1% THD-N output level.
Actual system idle losses are affected by core losses of output inductors.
ELECTRICAL CHARACTERISTICS
PVDD_X = 50 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 75°C, fS = 400 kHz, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION
VREG
Voltage regulator, only used as reference
node, VREG
VI_CM
Analog comparator reference node, VI_CM
IVDD
VDD supply current
IGVDD_X
GVDD_x gate-supply current per half-bridge
IPVDD_X
Half-bridge supply current
VDD = 12 V
3
3.3
3.6
V
1.5
1.75
1.9
V
Operating, 50% duty cycle
22.5
Idle, reset mode
22.5
50% duty cycle
12.5
Reset mode
mA
mA
1.5
50% duty cycle with recommended output
filter
13.3
mA
Reset mode, No switching
870
mA
33
kΩ
ANALOG INPUTS
RIN
Input resistance
READY = HIGH
VIN
Maximum input voltage swing
5
V
IIN
Maximum input current
342
mA
G
Voltage gain (VOUT/VIN)
23
dB
OSCILLATOR
Nominal, master mode
fOSC_IO+
AM1, master mode
FPWM × 10
AM2, master mode
VIH
High level input voltage
VIL
Low level input voltage
3.85
4
3.15
3.33
4.15
3.5
2.6
3
3.35
1.86
MHz
V
1.45
V
60
100
mΩ
60
100
mΩ
OUTPUT-STAGE MOSFETs
RDS(on)
10
Drain-to-source resistance, low side (LS)
Drain-to-source resistance, high side (HS)
TJ = 25°C, excludes metallization
resistance, GVDD = 12 V
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ELECTRICAL CHARACTERISTICS (continued)
PVDD_X = 50 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 75°C, fS = 400 kHz, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
I/O PROTECTION
Undervoltage protection limit, GVDD_x and
VDD
Vuvp,G
Vuvp,hyst
(1)
9.5
V
0.6
V
(1)
Overtemperature warning 1
95
100
105
°C
OTW2 (1)
Overtemperature warning 2
115
125
135
°C
OTWhyst
Temperature drop needed below OTW
temperature for OTW to be inactive after
OTW event
OTW1
(1)
25
Overtemperature error
OTE (1)
145
155
°C
165
°C
OTE-OTW differential
30
°C
A reset must occur for SD to be released
following an OTE event.
25
°C
fPWM = 400 kHz
2.6
ms
Resistor – programmable, nominal peak
current in 1-Ω load,
64-pin QFP package (PHD)
ROCP = 22 kΩ
19
A
Resistor – programmable, nominal peak
current in 1-Ω load,
44-Pin PSOP3 package (DKD),
ROCP = 24 kΩ
19
A
Overcurrent limit protection, latched
Resistor – programmable, nominal peak
current in 1-Ω load,
ROCP = 47 kΩ
19
A
IOCT
Overcurrent response time
Time from switching transition to flip-state
induced by overcurrent
150
ns
IPD
Internal pulldown resistor at output of each
half-bridge
Connected when RESET is active to
provide bootstrap charge. Not used in SE
mode
3
mA
OTEhyst
(1)
OLPC
Overload protection counter
Overcurrent limit protection
IOC
STATIC DIGITAL SPECIFICATIONS
VIH
High-level input voltage
VIL
Low-level input voltage
Ilkg
Input leakage current
INPUT_X, M1, M2, M3, RESET
2
V
0.8
V
100
mA
kΩ
OTW/SHUTDOWN (SD)
RINT_PU
Internal pullup resistance, OTW1 to VREG,
OTW2 to VREG, SD to VREG
VOH
High-level output voltage
VOL
Low-level output voltage
IO = 4 mA
FANOUT
Device fanout OTW1, OTW2, SD, CLIP,
READY
No external pullup
(1)
Internal pullup resistor
External pullup of 4.7 kΩ to 5 V
20
26
32
3
3.3
3.6
4.5
V
5
200
30
500
mV
devices
Specified by design.
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TYPICAL CHARACTERISTICS, BTL CONFIGURATION
TOTAL HARMONIC+NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
THD+N - Total Harmonic Distortion + Noise - %
10
TC = 75°C
5
PO - Output Power - W
2
1
0.5
0.2
4W
0.1
6W
0.05
0.02
8W
0.01
0.005
20m
100m200m
1 2
5 10 20 50 100
PO - Output Power - W
400
8W
120
100
80
60
40
20
0
25
30
35
40
45
PVDD - Supply Voltage - V
SYSTEM EFFICIENCY
vs
OUTPUT POWER
TC = 75°C
4W
220
200
6W
180
Efficiency - %
PO - Output Power - W
6W
UNCLIPPED OUTPUT POWER
vs
SUPPLY VOLTAGE
240
160
8W
140
120
100
80
60
40
30
35
40
45
PVDD - Supply Voltage - V
50
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
8W
6W
50
4W
TC = 25°C
THD+N at 10%
0
Figure 3.
12
4W
Figure 2.
260
20
0
25
TC = 75°C
THD+N at 10%
Figure 1.
300
280
340
320
300
280
260
240
220
200
180
160
140
100
500
200
300
400
600
2 Channel Output Power - W
700
Figure 4.
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SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
TYPICAL CHARACTERISTICS, BTL CONFIGURATION (continued)
SYSTEM POWER LOSS
vs
OUTPUT POWER
80
75
70
OUTPUT POWER
vs
CASE TEMPERATURE
340
320
300
TC = 25°C
THD+N at 10%
65
Power Loss - W
PO - Output Power - W
4W
60
55
50
45
40
6W
35
30
25
20
15
10
5
0
8W
0
100
200
300
400
500
2 Channel Output Power - W
600
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
10
4W
6W
8W
THD+N at 10%
20
Figure 5.
30
40 50 60 70 80 90 100 110 120
TC - Case Temperature - °C
Figure 6.
NOISE AMPLITUDE
vs
FREQUENCY
+0
-10
-20
Noise Amplitude - dB
-30
-40
-50
TC = 75°C,
VREF = 31.9 V,
Sample Rate = 48 kHz,
FFT Size = 16384
-60
-70
-80
-90
-100
-110
-120
4W
-130
-140
-150
-160
0k
2k
4k
6k
8k 10k 12k 14k 16k 18k 20k 22k
f - Frequency - Hz
Figure 7.
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TYPICAL CHARACTERISTICS, SE CONFIGURATION
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
5
TC = 75°C
4W
2
3W
PO - Output Power - W
THD+N - Total Harmonic Distortion + Noise - %
10
1
2W
0.5
0.2
0.1
0.05
0.02
0.01
0.005
20m
200m
1 2
5 10 20
PO - Output Power - W
50 100
170
160 TC = 75°C
150 THD+N at 10%
2W
140
130
3W
120
110
100
4W
90
80
70
60
50
40
30
20
10
0
25
30
35
40
45
PVDD - Supply Voltage - V
Figure 8.
50
Figure 9.
PO - Output Power - W
OUTPUT POWER
vs
CASE TEMPERATURE
14
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10
2W
3W
4W
THD+N at 10%
20
30
40 50 60 70 80 90 100 110 120
TC - Case Temperature - °C
Figure 10.
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SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
TYPICAL CHARACTERISTICS, PBTL CONFIGURATION
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
5
650
TC = 75°C
2W
TC = 75°C
THD+N at 10%
2W
550
3W
2
3W
500
4W
1
0.5
0.2
600
PO - Output Power - W
THD+N - Total Harmonic Distortion + Noise - %
10
6W
8W
0.1
0.05
450
4W
400
6W
350
8W
300
250
200
150
0.02
100
0.01
0.005
20m
50
0
25
100m 200m 1 2
5 10 20 50 100 200 700
PO - Output Power - W
30
35
40
45
PVDD - Supply Voltage - V
Figure 11.
50
Figure 12.
OUTPUT POWER
vs
CASE TEMPERATURE
700
2W
650
THD+N at 10%
600
PO - Output Power - W
550
500
3W
450
400
4W
350
300
6W
250
8W
200
150
100
50
0
10
20
30
40 50 60 70 80 90 100 110 120
TC - Case Temperature - °C
Figure 13.
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APPLICATION INFORMATION
PCB MATERIAL RECOMMENDATION
FR-4 2-oz. (70-mm) glass epoxy material is recommended for use with the TAS5630. The use of this material can
provide for higher power output, improved thermal performance, and better EMI margin (due to lower PCB trace
inductance).
PVDD CAPACITOR RECOMMENDATION
The large capacitors used in conjunction with each full bridge are referred to as the PVDD capacitors. These
capacitors should be selected for proper voltage margin and adequate capacitance to support the power
requirements. In practice, with a well-designed system power supply, 1000 mF, 63-V supports more applications.
The PVDD capacitors should be the low-ESR type, because they are used in a circuit associated with high-speed
switching.
DECOUPLING CAPACITOR RECOMMENDATIONS
To design an amplifier that has robust performance, passes regulatory requirements, and exhibits good audio
performance, quality decoupling capacitors should be used. In practice, X7R should be used in this application.
The voltage of the decoupling capacitors should be selected in accordance with good design practices.
Temperature, ripple current, and voltage overshoot must be considered. This fact is particularly true in the
selection of the 2.2-mF capacitor that is placed on the power supply to each half-bridge. It must withstand the
voltage overshoot of the PWM switching, the heat generated by the amplifier during high power output, and the
ripple current created by high power output. A minimum voltage rating of 63 V is required for use with a 50-V
power supply.
SYSTEM DESIGN RECOMMENDATIONS
The following schematics and PCB layouts illustrate best practices used for the TAS5630.
16
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R_RIGHT_N
IN_RIGHT_P
IN_LEFT_N
IN_LEFT_P
/RESET
10uF
C16
10uF
C14
10uF
C12
10uF
C10
C17
100pF
C15
100pF
C13
100pF
C11
100pF
C18
100pF
READY
/CLIP
GND
GND
R19
47k
GND
GND
GND
GND
GND
10k
R21
100nF
C22
VREG
1nF
C21
4.7nF
22.0k
C20
R20
330pF
GND
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
/OTW1
/SD
OSC_IO-
OSC_IO+
FREQ_ADJ
INPUT_D
INPUT_C
VREG
AGND
GND
VI_CM
INPUT_B
INPUT_A
C_STARTUP
/RESET
OC_ADJ
GND
C30
100nF
GND
3.3R
GND
VREG
57
U10
TAS5630PHD
C31
100nF
58
C33
100nF
GND
C40
33nF
GND GND
C32
100nF
3.3R
3.3R
R33
R32
C43
33nF
C63
2.2uF
GND_D
GND_C
GND_C
OUT_C
OUT_C
PVDD_C
PVDD_C
BST_C
BST_B
PVDD_B
PVDD_B
OUT_B
OUT_B
GND_B
GND_B
GND_A
GND
C60
2.2uF
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
GND
C62
2.2uF
C61
2.2uF
GND
L13
7uH
7uH
L12
C42
33nF
C41
33nF
L11
7uH
L10
7uH
1000uF
C65
C53
680nF
C52
680nF
GND
C51
680nF
C50
680nF
C72
1nF
GND
C73
1nF
GND
1000uF
C66
C71
1nF
GND
C70
1nF
R73
3.3R
C77
10nF
C76
10nF
R72
3.3R
GND
GND
C68
47uF
63V
R71
3.3R
C75
10nF
C74
10nF
R70
3.3R
GND
C67
1000uF
GND
GND
C69
2.2uF
GND
C64
1000uF
GND
PVDD
GND
PVDD
GVDD/VDD (+12V)
OUT_RIGHT_P
+
-
GND
OUT_RIGHT_M
C78
10nF
R74
3.3R
OUT_LEFT_P
+
-
OUT_LEFT_M
PVDD
GVDD/VDD (+12V)
www.ti.com
/OTW2
/OTW1
/SD
OSC_IO-
OSC_IO+
100R
R13
100R
R12
100R
R11
100R
R10
100R
R18
VREG
GND
C26
100nF
61
C23
C25
10uF
64
VDD
/OTW2
17
63
PSU_REF
/CLIP
18
62
19
NC
READY
60
NC
M1
20
GVDD_C
R31
26
3.3R
GVDD_D
54
BST_A
BST_D
27
53
OUT_A
OUT_D
28
56
GVDD_B
55
GVDD_A
OUT_A
OUT_D
29
52
30
51
PVDD_A
PVDD_D
50
PVDD_A
PVDD_D
49
GND_A
GND_D
31
59
NC
M2
21
NC
M3
22
GND
GND
23
GND
GND
24
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TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
Figure 14. Typical Differential-Input BTL Application With BD Modulation Filters
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READY
/CLIP
/OTW2
/OTW1
/SD
OSC_IO-
OSC_IO+
IN_N
IN_P
/RESET
10uF
10uF
100R
100R
100R
GND
GND
GND
100pF
100pF
100pF
GND
VREG
47k
VREG
GND
GND
GND
GND
GND
10k
100nF
1nF
4.7nF
22.0k
VREG
GND
GND
1
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
GND GND
100nF
/OTW1
/SD
OSC_IO-
OSC_IO+
FREQ_ADJ
INPUT_D
INPUT_C
VREG
AGND
GND
VI_CM
INPUT_B
INPUT_A
C_STARTUP
/RESET
OC_ADJ
330pF
10uF
64
VDD
/OTW2
17
63
PSU_REF
/CLIP
18
62
19
61
100nF
NC
READY
60
NC
20
NC
GND
100nF
GND
GND GND
59
100nF
VREG
GND
3.3R
33nF
GND GND
100nF
TAS5630PHD
NC
M3
22
M1
58
GND
GND
23
M2
56
GVDD_B
GVDD_C
3.3R
3.3R
33nF
3.3R
GVDD_D
26
54
BST_A
BST_D
27
57
GND
GND
24
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21
55
GVDD_A
OUT_A
OUT_D
28
53
OUT_A
OUT_D
29
52
30
51
PVDD_A
PVDD_D
49
GND_A
GND_D
50
PVDD_A
PVDD_D
31
18
32
VDD (+12V)
2.2uF
100V
GND_D
GND_C
GND_C
OUT_C
OUT_C
PVDD_C
PVDD_C
BST_C
BST_B
PVDD_B
PVDD_B
OUT_B
OUT_B
GND_B
GND_B
GND_A
GND
2.2uF
100V
48
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
GND
2.2uF
100V
2.2uF
100V
GND
33nF
33nF
7uH
7uH
7uH
7uH
1000uF
63V
1000uF
63V
1uF
250V
GND
1uF
250V
1000uF
63V
1000uF
63V
GND
GND
1nF
100V
1nF
100V
GND
GND
47uF
63V
GND
3.3R
10nF
100V
10nF
100V
3.3R
GND
10nF
100V
+
GVDD (+12V)
PVDD
OUT_LEFT_P
GND
OUT_LEFT_M
GND
2.2uF
100V
3.3R
PVDD
GVDD (+12V)
TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
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Figure 15. Typical Differential (2N) PBTL Application With BD Modulation Filters
Copyright © 2009–2010, Texas Instruments Incorporated
READY
/CLIP
/OTW2
/OTW1
/SD
OSC_IO-
OSC_IO+
IN_D
IN_C
IN_B
IN_A
/RESET
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147kW
165kW
187kW
191kW
50V
49V
48V
<48V
GND
GND
GND
GND
R_COMP
100R
100R
100R
GND
100pF
100pF
100pF
100pF
100pF
PVDD
PVDD
C
A
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470uF
50V
470uF
50V
470uF
50V
470uF
50V
GND
GND
GND
GND
GND
GND
GND
R_COMP
R_COMP
10k
1%
10k
1%
10k
1%
10k
1%
10k
100nF
1nF
10nF
22.0k
VREG
GND
10k
10k
GND
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
470nF
250V
470nF
250V
/OTW1
/SD
OSC_IO-
OSC_IO+
100nF
100V
100nF
100V
100nF
100V
100nF
100V
FREQ_ADJ
INPUT_D
INPUT_C
VREG
AGND
GND
VI_CM
INPUT_B
INPUT_A
C_STARTUP
/RESET
OC_ADJ
330pF
61
62
GND
GND
10nF
100V
100V
10nF
3.3R
3.3R
10nF
100V
100V
10nF
3.3R
3.3R
GND
GND
GND GND
100nF
54
GND
GND
OUT_C_P
+
-
OUT_C_M
GND
GND
OUT_A_P
+
-
OUT_A_M
100nF
VREG
GND
PVDD
PVDD
D
B
GND GND
100nF
TAS5630PHD
52
3.3R
33nF
53
470uF
50V
470uF
50V
470uF
50V
470uF
50V
3.3R
3.3R
33nF
51
GND
GND
1%
10k
1%
10k
R_COMP
1%
10k
1%
10k
R_COMP
2.2uF
GND_D
GND_C
GND_C
10k
10k
OUT_C
OUT_C
PVDD_C
PVDD_C
BST_C
BST_B
PVDD_B
PVDD_B
OUT_B
OUT_B
GND_B
GND_B
GND_A
GND
2.2uF
48
47
33
34
35
36
37
38
39
40
41
42
43
44
45
46
470nF
250V
470nF
250V
100nF
100V
100nF
100V
100nF
100V
100nF
100V
GND
2.2uF
2.2uF
GND
33nF
33nF
GND
GND
10nF
100V
47uF
63V
100V
10nF
3.3R
3.3R
10nF
100V
100V
10nF
3.3R
3.3R
15uH
15uH
15uH
15uH
GND
GND
OUT_D_P
+
-
OUT_D_M
GND
GND
OUT_B_P
+
-
OUT_B_M
GND
GND
2.2uF
GND
10nF
3.3R
GVDD (+12V)
D
PVDD
C
PVDD
B
PVDD
A
GVDD (+12V)
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PVDD
10uF
10uF
10uF
10uF
100R
100R
47k
GND GND
100nF
60
NC
VREG
100nF
49
GND_A
3.3R
50
PVDD_A
10uF
64
VDD
/OTW2
17
63
PSU_REF
/CLIP
18
NC
19
59
NC
M3
22
READY
58
GND
GND
23
NC
20
57
GND
GND
24
M1
56
GVDD_B
GVDD_C
25
M2
21
55
GVDD_A
GVDD_D
26
BST_A
BST_D
27
OUT_A
OUT_D
28
OUT_A
OUT_D
29
PVDD_A
PVDD_D
30
PVDD_D
31
GND_D
32
VDD (+12V)
TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
Figure 16. Typical SE Application
19
READY
/CLIP
/OTW2
/OTW1
/SD
OSC_IO-
OSC_IO+
IN_RIGHT
IN_LEFT
IN_CENTER_N
IN_CENTER_P
/RESET
10uF
10uF
10uF
10uF
100R
100R
100R
100R
100R
GND
GND
GND
GND
GND
100pF
100pF
100pF
100pF
100pF
47k
VREG
GND
GND
GND
GND
GND
10k
100nF VREG
1nF
10nF
22.0k
GND
GND
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
/OTW1
/SD
OSC_IO-
OSC_IO+
FREQ_ADJ
INPUT_D
INPUT_C
VREG
AGND
GND
VI_CM
INPUT_B
INPUT_A
C_STARTUP
/RESET
OC_ADJ
330pF
GND GND
100nF
64
VDD
10uF
100nF
61
VREG
GND
GND GND
100nF
57
59
GND
100nF
GND
3.3R
33nF
GND GND
100nF
TAS5630PHD
GND
GND
63
18
/OTW2
17
PSU_REF
/CLIP
56
GVDD_B
GVDD_C
3.3R
3.3R
3.3R
33nF
GVDD_D
26
VDD (+12V)
27
54
BST_A
BST_D
53
OUT_A
OUT_D
28
60
62
NC
READY
19
NC
M1
20
NC
21
NC
M3
22
M2
55
GVDD_A
OUT_A
OUT_D
29
52
30
51
PVDD_A
PVDD_D
50
PVDD_A
PVDD_D
58
GND
GND
23
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24
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25
49
GND_A
GND_D
31
20
32
2.2uF
100V
GND_D
GND_C
GND_C
OUT_C
OUT_C
PVDD_C
PVDD_C
BST_C
BST_B
PVDD_B
PVDD_B
OUT_B
OUT_B
GND_B
GND_B
GND_A
GND
2.2uF
100V
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
GND
2.2uF
100V
2.2uF
100V
GND
15uH
PVDD
15uH
PVDD
33nF
33nF
GND
10k
1%
10k
1%
10k
1%
470uF
50V
470uF
50V
GND
R_COMP
10k
1%
470uF
50V
GND
R_COMP
GND
47uF
63V
470uF
50V
1000uF
63V
GND
10k
10k
10nF
100V
3.3R
GND
2.2uF
100V
7uH
680nF
250V
GND
680nF
250V
7uH
GND
470nF
250V
GND
GND
470nF
250V
GND
100V
10nF
100nF
100V
100nF
100V
10nF
100V
100V
10nF
100nF
100V
100nF
100V
10nF
100V
1nF
100V
1nF
100V
1000uF
63V
3.3R
GND
3.3R
3.3R
GND
3.3R
3.3R
10nF
100V
10nF
100V
3.3R
GND
GVDD (+12V)
PVDD
OUT_RIGHT_P
+
-
OUT_RIGHT_M
OUT_LEFT_P
+
-
OUT_LEFT_M
PVDD
OUT_CENTER_P
GND
+
-
OUT_CENTER_M
PVDD
GVDD (+12V)
TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
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Figure 17. Typical 2.1 System Differential-Input BTL and Unbalanced-Input SE Application
Copyright © 2009–2010, Texas Instruments Incorporated
Copyright © 2009–2010, Texas Instruments Incorporated
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READY
/OTW
10uF
10uF
10uF
10uF
100R
R60
100R
R53
100R
R54
100R
R45
100R
R13
C81
100pF
C80
100pF
C79
100pF
C82
100pF
GND
C78
100pF
VREG
R44
47k
GND
GND
GND
GND
GND
GND
R20
10k
C86
100nF
GND
GND
VREG
22
21
20
19
18
17
16
15
14
13
12
11
9
8
7
6
5
4
3
2
1
10
VREG
GND
1nF
GND
C35
100nF
C42
C85
4.7nF
24k
C45
R14
330pF
C44
10uF
M3
M2
M1
READY
/OTW
/SD
OSC_IO-
OSC_IO+
GVDD_CD
BST_D
PVDD_D
PVDD_D
OUT_D
OUT_D
GND_D
GND_C
OUT_C
PVDD_C
BST_C
BST_B
PVDD_B
OUT_B
GND_B
GND_A
OUT_A
OUT_A
PVDD_A
PVDD_A
BST_A
GVDD_AB
TAS5630DKD
FREQ_ADJ
INPUT_D
INPUT_C
VREG
AGND
GND
VI_CM
INPUT_B
INPUT_A
C_STARTUP
/RESET
OC_ADJ
VDD
PSU_REF
U12
100nF
C89
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
R31
GND
100nF
C84
33nF
C88
1.5R
33nF
33nF
GND
C37
C41
GND
33nF
C33
GND
C87
100nF
C34
2.2uF
C91
2.2uF
C90
2.2uF
C83
2.2uF
GND
7uH
680nF
250V
GND
GND
63V
1000uF
680nF
250V
7uH
GND
63V
1000uF
7uH
680nF
250V
GND
680nF
250V
7uH
1nF
100V
1nF
100V
GND
1000uF
63V
47uF
63V
1nF
100V
1nF
100V
1000uF
63V
GND
3.3R
10nF
100V
10nF
100V
3.3R
GND
GND
+
OUT_RIGHT_P
GND
OUT_RIGHT_M
10nF
100V
3.3R
OUT_LEFT_P
+
-
OUT_LEFT_M
GND
2.2uF
100V
3.3R
10nF
100V
10nF
100V
3.3R
GND
GVDD (+12V)
PVDD
PVDD
PVDD
GVDD (+12V)
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/SD
OSC_IO-
OSC_IO+
IN_RIGHT_N
IN_RIGHT_P
IN_LEFT_N
IN_LEFT_P
/RESET
VDD (+12V)
C38
100nF
R34
1.5R
TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
Figure 18. Typical Differential-Input BTL Application With BD Modulation Filters, DKD Package
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TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
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THEORY OF OPERATION
POWER SUPPLIES
To facilitate system design, the TAS5630 needs only a 12-V supply in addition to the (typical) 50-V power-stage
supply. An internal voltage regulator provides suitable voltage levels for the digital and low-voltage analog
circuitry. Additionally, all circuitry requiring a floating voltage supply, e.g., the high-side gate drive, is
accommodated by built-in bootstrap circuitry requiring only an external capacitor for each half-bridge.
To provide outstanding electrical and acoustical characteristics, the PWM signal path, including gate drive and
output stage, is designed as identical, independent half-bridges. For this reason, each half-bridge has separate
gate drive supply pins (GVDD_X), bootstrap pins (BST_X), and power-stage supply pins (PVDD_X).
Furthermore, an additional pin (VDD) is provided as supply for all common circuits. Although supplied from the
same 12-V source, it is highly recommended to separate GVDD_A, GVDD_B, GVDD_C, GVDD_D, and VDD on
the printed-circuit board (PCB) by RC filters (see application diagram for details). These RC filters provide the
recommended high-frequency isolation. Special attention should be paid to placing all decoupling capacitors as
close to their associated pins as possible. In general, inductance between the power supply pins and decoupling
capacitors must be avoided. (See reference board documentation for additional information.)
For a properly functioning bootstrap circuit, a small ceramic capacitor must be connected from each bootstrap pin
(BST_X) to the power-stage output pin (OUT_X). When the power-stage output is low, the bootstrap capacitor is
charged through an internal diode connected between the gate-drive power-supply pin (GVDD_X) and the
bootstrap pin. When the power-stage output is high, the bootstrap capacitor potential is shifted above the output
potential and thus provides a suitable voltage supply for the high-side gate driver. In an application with PWM
switching frequencies in the range from 300 kHz to 400 kHz, it is recommended to use 33-nF ceramic capacitors,
size 0603 or 0805, for the bootstrap supply. These 33-nF capacitors ensure sufficient energy storage, even
during minimal PWM duty cycles, to keep the high-side power stage FET (LDMOS) fully turned on during the
remaining part of the PWM cycle.
Special attention should be paid to the power-stage power supply; this includes component selection, PCB
placement, and routing. As indicated, each half-bridge has independent power-stage supply pins (PVDD_X). For
optimal electrical performance, EMI compliance, and system reliability, it is important that each PVDD_X pin is
decoupled with a 2.2-mF ceramic capacitor placed as close as possible to each supply pin. It is recommended to
follow the PCB layout of the TAS5630 reference design. For additional information on recommended power
supply and required components, see the application diagrams in this data sheet.
The 12-V supply should be from a low-noise, low-output-impedance voltage regulator. Likewise, the 50-V
power-stage supply is assumed to have low output impedance and low noise. The power-supply sequence is not
critical as facilitated by the internal power-on-reset circuit. Moreover, the TAS5630 is fully protected against
erroneous power-stage turnon due to parasitic gate charging. Thus, voltage-supply ramp rates (dV/dt) are
non-critical within the specified range (see the Recommended Operating Conditions table of this data sheet).
SYSTEM POWER-UP/POWER-DOWN SEQUENCE
Powering Up
The TAS5630 does not require a power-up sequence. The outputs of the H-bridges remain in a high-impedance
state until the gate-drive supply voltage (GVDD_X) and VDD voltage are above the undervoltage protection
(UVP) voltage threshold (see the Electrical Characteristics table of this data sheet). Although not specifically
required, it is recommended to hold RESET in a low state while powering up the device. This allows an internal
circuit to charge the external bootstrap capacitors by enabling a weak pulldown of the half-bridge output.
Powering Down
The TAS5630 does not require a power-down sequence. The device remains fully operational as long as the
gate-drive supply (GVDD_X) voltage and VDD voltage are above the undervoltage protection (UVP) voltage
threshold (see the Electrical Characteristics table of this data sheet). Although not specifically required, it is a
good practice to hold RESET low during power down, thus preventing audible artifacts including pops or clicks.
22
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SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
ERROR REPORTING
The SD, OTW, OTW1 and OTW2 pins are active-low, open-drain outputs. Their function is for protection-mode
signaling to a PWM controller or other system-control device.
Any fault resulting in device shutdown is signaled by the SD pin going low. Likewise, OTW and OTW2 go low
when the device junction temperature exceeds 125°C and OTW1 goes low when the junction temperature
exceeds 100°C (see the following table).
SD
OTW1
OTW2,
OTW
0
0
0
Overtemperature (OTE) or overload (OLP) or undervoltage (UVP)
0
0
1
Overload (OLP) or undervoltage (UVP). Junction temperature higher than 100°C (overtemperature
warning)
0
1
1
Overload (OLP) or undervoltage (UVP)
1
0
0
Junction temperature higher than 125°C (overtemperature warning)
1
0
1
Junction temperature higher than 100°C (overtemperature warning)
1
1
1
Junction temperature lower than 100°C and no OLP or UVP faults (normal operation)
DESCRIPTION
Note that asserting either RESET low forces the SD signal high, independent of faults being present. TI
recommends monitoring the OTW signal using the system microcontroller and responding to an overtemperature
warning signal by, e.g., turning down the volume to prevent further heating of the device resulting in device
shutdown (OTE).
To reduce external component count, an internal pullup resistor to 3.3 V is provided on both SD and OTW
outputs. Level compliance for 5-V logic can be obtained by adding external pullup resistors to 5 V (see the
Electrical Characteristics table of this data sheet for further specifications).
DEVICE PROTECTION SYSTEM
The TAS5630 contains advanced protection circuitry carefully designed to facilitate system integration and ease
of use, as well as to safeguard the device from permanent failure due to a wide range of fault conditions such as
short circuits, overload, overtemperature, and undervoltage. The TAS5630 responds to a fault by immediately
setting the power stage in a high-impedance (Hi-Z) state and asserting the SD pin low. In situations other than
overload and overtemperature error (OTE), the device automatically recovers when the fault condition has been
removed, i.e., the supply voltage has increased.
The device functions on errors, as shown in the following table.
BTL Mode
Local error in
A
B
C
D
PBTL Mode
Turns Off or in
A+B
C+D
Local error in
Turns Off or in
A
B
C
SE Mode
Local error in
Turns Off or in
A
A+B+C+D
D
B
C
D
A+B
C+D
Bootstrap UVP does not shut down according to the table; it shuts down the respective half-bridge.
PIN-TO-PIN SHORT-CIRCUIT PROTECTION (PPSC)
The PPSC detection system protects the device from permanent damage if a power output pin (OUT_X) is
shorted to GND_X or PVDD_X. For comparison, the OC protection system detects an overcurrent after the
demodulation filter, whereas PPSC detects shorts directly at the pin before the filter. PPSC detection is
performed at startup, i.e., when VDD is supplied; consequently, a short to either GND_X or PVDD_X after
system startup does not activate the PPSC detection system. When PPSC detection is activated by a short on
the output, all half-bridges are kept in a Hi-Z state until the short is removed; the device then continues the
startup sequence and starts switching. The detection is controlled globally by a two-step sequence. The first step
ensures that there are no shorts from OUT_X to GND_X; the second step tests that there are no shorts from
OUT_X to PVDD_X. The total duration of this process is roughly proportional to the capacitance of the output LC
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TAS5630
SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
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filter. The typical duration is <15 ms/mF. While the PPSC detection is in progress, SD is kept low, and the device
does not react to changes applied to the RESET pins. If no shorts are present the PPSC detection passes, and
SD is released, a device reset does not start a new PPSC detection. PPSC detection is enabled in BTL and
PBTL output configurations; the detection is not performed in SE mode. To make sure the PPSC detection
system is not tripped, it is recommended not to insert resistive load to GND_X or PVDD_X.
OVERTEMPERATURE PROTECTION
The two different package options have individual overtemperature protection schemes.
PHD Package:
The TAS5630 PHD package option has a three-level temperature-protection system that asserts an active-low
warning signal (OTW1) when the device junction temperature exceeds 100°C (typical), (OTW2) when the device
junction temperature exceeds 125°C (typical) and, if the device junction temperature exceeds 155°C (typical), the
device is put into thermal shutdown, resulting in all half-bridge outputs being set in the high-impedance (Hi-Z)
state and SD being asserted low. OTE is latched in this case. To clear the OTE latch, RESET must be asserted.
Thereafter, the device resumes normal operation.
DKD Package:
The TAS5630 DKD package option has a two-level temperature-protection system that asserts an active-low
warning signal (OTW) when the device junction temperature exceeds 125°C (typical) and, if the device junction
temperature exceeds 155°C (typical), the device is put into thermal shutdown, resulting in all half-bridge outputs
being set in the high-impedance (Hi-Z) state and SD being asserted low. OTE is latched in this case. To clear the
OTE latch, RESET must be asserted. Thereafter, the device resumes normal operation.
UNDERVOLTAGE PROTECTION (UVP) AND POWER-ON RESET (POR)
The UVP and POR circuits of the TAS5630 fully protect the device in any power-up/down and brownout situation.
While powering up, the POR circuit resets the overload circuit (OLP) and ensures that all circuits are fully
operational when the GVDD_X and VDD supply voltages reach the levels stated in the Electrical Characteristics
table. Although GVDD_X and VDD are independently monitored, a supply voltage drop below the UVP threshold
on any VDD or GVDD_X pin results in all half-bridge outputs immediately being set in the high-impedance (Hi-Z)
state and SD being asserted low. The device automatically resumes operation when all supply voltages have
increased above the UVP threshold.
DEVICE RESET
When RESET is asserted low, all power-stage FETs in the four half-bridges are forced into a high-impedance
(Hi-Z) state.
In BTL modes, to accommodate bootstrap charging prior to switching start, asserting the reset input low enables
weak pulldown of the half-bridge outputs. In the SE mode, the output is forced into a high-impedance state when
asserting the reset input low. Asserting reset input low removes any fault information to be signaled on the SD
output; i.e., SD is forced high. A rising-edge transition on reset input allows the device to resume operation after
an overload fault. To ensure thermal reliability, the rising edge of reset must occur no sooner than 4 ms after the
falling edge of SD.
SYSTEM DESIGN CONSIDERATIONS
A rising-edge transition on the reset input allows the device to execute the startup sequence and starts switching.
Apply audio only when the state of READY is high; that starts and stops the amplifier without having audible
artifacts that are heard in the output transducers. If an overcurrent protection event is introduced, the READY
signal goes low; hence, filtering is needed if the signal is intended for audio muting in non-microcontroller
systems.
The CLIP signal indicates that the output is approaching clipping. The signal can be used to either an audio
volume decrease or intelligent power supply controlling a low and a high rail.
The device inverts the audio signal from input to output.
The VREG pin is not recommended to be used as a voltage source for external circuitry.
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SLES220B – JUNE 2009 – REVISED FEBRUARY 2010
OSCILLATOR
The oscillator frequency can be trimmed by external control of the FREQ_ADJ pin.
To reduce interference problems while using a radio receiver tuned within the AM band, the switching frequency
can be changed from nominal to lower values. These values should be chosen such that the nominal and the
lower-value switching frequencies together result in the fewest cases of interference throughout the AM band,
and can be selected by the value of the FREQ_ADJ resistor connected to AGND in master mode.
For slave-mode operation, turn off the oscillator by pulling the FREQ_ADJ pin to VREG. This configures the
OSC_I/O pins as inputs, which must be slaved from an external clock.
PRINTED CIRCUIT BOARD RECOMMENDATION
Use an unbroken ground plane to have a good low-impedance and -inductance return path to the power supply
for power and audio signals. PCB layout, audio performance and EMI are linked closely together. The circuit
contains high, fast-switching currents; therefore, care must be taken to prevent damaging voltage spikes. Routing
of the audio input should be kept short and together with the accompanying audio-source ground. A local ground
area underneath the device is important to keep solid to minimize ground bounce.
Netlist for this printed circuit board is generated from the schematic in Figure 14.
Note T1: PVDD bulk decoupling capacitors C60–C64 should be as close as possible to the PVDD_X and GND_X
pins; the heat sink sets the distance. Wide traces should be routed on the top layer with direct connection to the pins
and without going through vias. No vias or traces should be blocking the current path.
Note T2: Close decoupling of PVDD with low impedance X7R ceramic capacitors is placed under the heat sink and
close to the pins.
Note T3: Heat sink must have a good connection to PCB ground.
Note T4: Output filter capacitors must be linear in the applied voltage range, preferably metal film types.
Figure 19. Printed Circuit Board – Top Layer
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TAS5630
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Note B1: It is important to have a direct-low impedance return path for high current back to the power supply. Keep
impedance low from top to bottom side of PCB through a lot of ground vias.
Note B2: Bootstrap low-impedance X7R ceramic capacitors placed on bottom side provide a short, low-inductance
current loop.
Note B3: Return currents from bulk capacitors and output filter capacitors
Figure 20. Printed Circuit Board – Bottom Layer
REVISION HISTORY
Changes from Original (July 2009) to Revision A
•
Page
Deleted Product Preview from the PHD package ................................................................................................................. 3
Changes from Revision A (September 2009) to Revision B
Page
•
Changed several frame-rate specifications in Recommended Operating Conditions .......................................................... 4
•
Changed oscillator frequency specifications in Electrical Characteristics .......................................................................... 10
•
Changed specification for overload protection counter in Electrical Characteristics .......................................................... 11
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
TAS5630DKD
NRND
HSSOP
DKD
44
29
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
0 to 70
TAS5630
TAS5630DKDR
NRND
HSSOP
DKD
44
500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
0 to 70
TAS5630
TAS5630PHD
NRND
HTQFP
PHD
64
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-5A-260C-24 HR
0 to 70
TAS5630
TAS5630PHDR
NRND
HTQFP
PHD
64
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-5A-260C-24 HR
0 to 70
TAS5630
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
7-May-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
TAS5630DKDR
HSSOP
DKD
44
500
330.0
24.4
TAS5630PHDR
HTQFP
PHD
64
1000
330.0
24.4
Pack Materials-Page 1
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
14.7
16.4
4.0
20.0
24.0
Q1
17.0
17.0
1.5
20.0
24.0
Q2
PACKAGE MATERIALS INFORMATION
www.ti.com
7-May-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TAS5630DKDR
HSSOP
DKD
TAS5630PHDR
HTQFP
PHD
44
500
367.0
367.0
45.0
64
1000
367.0
367.0
45.0
Pack Materials-Page 2
PACKAGE OUTLINE
DKD0044A
PowerPAD TM SSOP - 3.6 mm max height
SCALE 1.000
PLASTIC SMALL OUTLINE
C
SEATING PLANE
14.5
TYP
13.9
A
0.1 C
PIN 1 ID AREA
42X 0.65
44
1
EXPOSED
THERMAL PAD
12.7
12.6
16.0
15.8
NOTE 3
2X
13.65
22
23
44X
(2.95)
0.38
0.25
0.12
C A B
5.9
5.8
B
11.1
10.9
NOTE 4
(0.15)
EXPOSED THERMAL PAD
3.6
3.1
(0.28) TYP
SEE DETAIL A
0.35
GAGE PLANE
0 -8
0.3
0.1
1.1
0.8
DETAIL A
TYPICAL
4218846/A 07/2016
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. The exposed thermal pad is designed to be attached to an external heatsink.
www.ti.com
EXAMPLE BOARD LAYOUT
DKD0044A
PowerPAD TM SSOP - 3.6 mm max height
PLASTIC SMALL OUTLINE
44X (2)
SEE DETAILS
SYMM
1
44
44X (0.45)
42X (0.65)
SYMM
(R0.05) TYP
22
23
(13.2)
LAND PATTERN EXAMPLE
SCALE:6X
SOLDER MASK
OPENING
METAL
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
0.05 MAX
AROUND
0.05 MIN
AROUND
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOT TO SCALE
4218846/A 07/2016
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DKD0044A
PowerPAD TM SSOP - 3.6 mm max height
PLASTIC SMALL OUTLINE
44X (2)
1
SYMM
44
44X (0.45)
42X (0.65)
SYMM
(R0.05) TYP
23
22
(13.2)
SOLDER PASTE EXAMPLE
BASED ON 0.125 MM THICK STENCIL
SCALE:6X
4218846/A 07/2016
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
www.ti.com
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Texas Instruments Incorporated (‘TI”) technical, application or other design advice, services or information, including, but not limited to,
reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to assist designers who are
developing applications that incorporate TI products; by downloading, accessing or using any particular TI Resource in any way, you
(individually or, if you are acting on behalf of a company, your company) agree to use it solely for this purpose and subject to the terms of
this Notice.
TI’s provision of TI Resources does not expand or otherwise alter TI’s applicable published warranties or warranty disclaimers for TI
products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections,
enhancements, improvements and other changes to its TI Resources.
You understand and agree that you remain responsible for using your independent analysis, evaluation and judgment in designing your
applications and that you have full and exclusive responsibility to assure the safety of your applications and compliance of your applications
(and of all TI products used in or for your applications) with all applicable regulations, laws and other applicable requirements. You
represent that, with respect to your applications, you have all the necessary expertise to create and implement safeguards that (1)
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