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Transcript
Tunable RF Modules with Barium Strontium Titanate(BST) Based Capacitors
for Adaptive Electronics
Professor T.S. Kalkur
Microelectronics Research Laboratories
Department of Electrical and Computer Engineering
University of Colorado at Colorado Springs,
Colorado Springs, CO 80933-7150, USA
Presently at Intel Corporation, Oregon, USA.
Abstract:
Recently, there is increasing interest in implementing adaptive RF electronics blocks such as,
tunable impedance matching networks, voltage controlled oscillators(VCOs), tunable power splitters,
phase shifters tunable band stop and band pass filters with tunable capacitors( varactors). Tunable
blocks can cover multiple bands and gives flexibility in fabrication to attain given performance.
Conventional p-n junctions, micromechanical devices or BST capacitors can be used as a varactor.
Conventional p-n junctions mostly tune in the reverse biased mode and forward bias results in excessive
power dissipation because of large flow of current. In addition, they cannot be integrated on low loss
substrates. In the case MEMS devices, they are delicate to handle especially during packaging and
usually need high voltages. Tunable BST capacitors offer the advantages process independent
integration on low loss substrates and bidirectional tuning. In this presentation, we will cover our work
on BST capacitor based inter-digited tunable band filters, multistage tunable band stop filters, tunable
power amplifiers, VCOs, tunable power splitters and tunable patch antennas. We will present design,
simulation, fabrication and characterization of these modules.