Download Panasonic PGA26E19BA Datasheet

PRODUCT OVERVIEW
PGA26E19BA
D
G
600V/190mΩ GaN Power Transistor
S
PGA26E19BA Product Overview
Overview
Panasonic’s GaN power transistors offer superior device
performances enabling higher power conversion efficiency and
higher power density of power electronic systems than those by
conventional Si-based power devices.
Features
– Crystal growth of GaN on 6-inch silicon substrate.
– 600V enhancement mode power switch Normally-Off operation
with single GaN device by Panasonic’s proprietary
GIT: Gate Injection Transistor technology.
– Extremely high-speed switching characteristics.
– Current Collapse Free 600V and more.
– Zero recovery loss characteristics.
Applications
– Power supply for AC-DC (PFC, Isolated DC-DC)
– Battery charger system
– Photovoltaic power converter, Motor inverter
Absolute Maximum Ratings (Tj=25℃, unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage (DC)
VDSS
600
V
Drain-source voltage( pulse)
VDSP
750
V
Gate current( DC )
IG
19
mA
Drain current (DC) (Tc=25℃)
ID
13
A
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
℃
Note） All conditions should be within 150℃ Tj.
℃
Thermal Characteristics (Typical values, unless otherwise specified)
Item
Symbol
Ratings
Unit
Thermal resistance (junction to case)
Rth(j-c)
max 1.9
Thermal resistance (junction to ambient)
Rth(j-a)
max 46
℃/W
PD
69
Power dissipation (Tc=25℃)
Publication date: Mar 2017
℃/W
W
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PRODUCT OVERVIEW
PGA26E19BA
Electrical Characteristics (Typical values at Tj=25℃, unless otherwise specified)
Item
Symbol
Condition
Value
Unit
VDS=600V, VGS=0V, Tj=25℃
max39
uA
VDS=600V, VGS=0V, Tj=150℃
39
uA
Drain cut-off current
IDSS
Gate-source leakage current
IGSS
VGS= -3V, VDS=0V
-1
uA
Gate threshold voltage
VTH
VDS=10V, IDS=0.9mA
1.2
V
Drain-source on-state resistance
RDS(on)
IGS=9.2mA, IDS=5A, Tj=25℃
140
mΩ
IGS=9.2mA, IDS=5A, Tj=150℃
290
mΩ
f=100 MHz, open drain
0.8
Ω
160
pF
28
pF
Gate resistance
RG
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
0.2
pF
Effective output capacitance
(energy related)
Co(er)
33
pF
Effective output capacitance
(time related)
Co(tr)
37
pF
Gate charge
Qg
2.0
nC
Gate-source charge
Qgs
0.3
nC
Gate-drain charge
Qgd
1.0
nC
1.8
V
2.6
V
0
nC
17
nC
VDS=400V, VGS=0V, f=1MHz
VDS=0V to 480V
Gate plateau voltage
Source-drain forward voltage
Reverse recovery charge
Output charge
VDD=400V, IDS=5A
Vplateau VDD=400V, IDS=5A
VSD
Qrr
Qoss
VGS=0V,ISD=5A
VDS=400V, ISD=5A
Package Outline
Unit: mm
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