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semiconductor devices, light-emit diodes etc, pts
Diodes, Other than Photosensitive or Light Emitting Diodes
Transistors, With a Dissipation Rate of Less than 1w
Other Transistors, Other than Photosensitive Transistors
Thyristors, Diacs and Triacs, Other than Photosensitive Devices
Photosensitive Semiconductor Devices; Light Emitting Diodes
Other Semiconductor Devices
Mounted Piezo-electric Crystals
Parts of Diodes, Transistors or Photosensitive Semiconductor Devices
American Standards
ANSI/EIA 4900-2002, Use of
Semiconductor Devices Outside
Manufacturers' Specified Temperature
Ranges
Prescribes processes for using semiconductor
devices in wider temperature ranges than those
specified by the device manufacturer. It
applies to any designer or manufacturer of
equipment intended to operate under
conditions that require semiconductor devices
to function in temperature ranges beyond those
for which the devices are marketed.
ANSI N42.31-2003, Measurement
Procedures for Resolution and Efficiency
of Wide-Bandgap Semiconductor
Detectors of Ionizing Radiation
Measurement and test procedures are
established for wide-bandgap semiconductor
detectors such as cadmium-telluride (CdTe)
cadmium-zinc-telluride (CdZnTe), and mercuric
iodide (HgI2) that can be used at room
temperature for the detection and quantitative
characterization of gamma-rays, X-rays and
charged particles. Standard terminology and
descriptions of the principal features of the
detectors are included.
IEEE 1450.1-2005, Standard for Extensions
to Standard Test Interface Language
(STIL) (IEEE Std. 1450-1999) for
Semiconductor Design Environments
Standard Test Interface Language (STIL)
provides an interface between digital test
generation tools and test equipment.
Extensions to the test interface language are
defined that a) facilitate the use of the language
in the design environment and b) facilitate the
use of the language for large designs
encompassing sub-designs with reusable
patterns.
IEEE C57.18.10-1998 (R2003), Standard
Practices and Requirements for
Semiconductor Power Rectifier
Transformers
Includes practices and requirements for
semiconductor power rectifier transformers for
dedicated loads rated single-phase 300 kW
and above and three-phase 500 kW and above
IEEE C62.35-1987 (R2000), Standard Test
Specifications for Avalanche Junction
Semiconductor Surge-Portective Devices
Applies to a two-terminal avalanche junction
surge suppressor for surge protective
application on systems with dc to 420 Hz
frequency and voltages equal to or less than
1000 V rms or 1200 V dc.
ANSI/NFPA 318-2006, Standard for the
Protection of Semiconductor Fabrication
Facilities
Provides reasonable safeguards for the
protection of facilities containing cleanrooms
from fire and related hazards. These
safeguards are intended to provide protection
against injury, life loss, and property damage.
UL 248-13-2005, Standard for Safety for
Low-Voltage Fuses – Part 13:
Semiconductor Fuses
These UL 248 proposals include increased use
of International symbology, clarifications,
editorial revisions, establishment of minimum
samples in the Operation Test for Fuses, the
addition of Canadian requirements for Class K
fuses with Class H dimensions, miniature fuse
requirements, withdrawal of body temperature
requirements and the addition of 600 V ratings
to Class T fuses.
IEEE C62.37-1996 (R2002), Standard Test
Specification for Thyristor Diode Surge
Protective Devices
Applies to two or three terminal, four or five
layer, thyristor surge protection devices (SPDs)
for application on systems with voltages equal
to or less than 1000 V rms or 1200 V dc.
ANSI Z21.77-2005, Manually-Operated
Piezo-Electric Spark Gas Ignition
Systems and Components
Details test and examination criteria for
manually operated piezo-electric spark gas
ignition systems and components, designed to
ignite an appliance burner(s), for use with
natural, manufactured or mixed gases, liquefied
petroleum gases or LP gas-air mixtures.
ANSI Z21.77b-2004, Manually Operated
Piezo-Electric Spark Gas Ignition
Systems and Components
Details test and examination criteria for
manually operated piezo-electric spark gas
ignition systems and components, designed to
ignite an appliance burner(s), for use with
natural, manufactured or mixed gases, liquefied
petroleum gases or LP gas-air mixtures.
IEEE 857-1996 (R2004), Recommended
Practice for Test Procedures for High
Voltage Direct Current Thyristor Valves
Contains information and recommendations for
the type testing of thyristor valves for
high-voltage direct-current (HVDC) power
transmission systems.
IEEE C62.37.1-2000, Guide for the
Application of Thyristor Surge Protective
Devices
Applies to thyristor Surge Protective Devices
(thyristor SPD) components used in systems
with voltages up to 1000 Vrms or 1200 Vdc.
These components are designed to limit
overvoltages and divert surge currents by
voltage clamping and crowbarring (switching to
a low impedance) actions.
International Standards
IEC
IEC 60050-521 Ed. 2.0 b:2002 International Electrotechnical Vocabulary - Part
521: Semiconductor devices and integrated
circuits
IEC 60092-304 Amd.1 Ed. 3.0 b:1995 Amendment 1 - Electrical installations in ships.
Part 304: Equipment - Semiconductor convertors
IEC 60092-304 Ed. 3.0 b:1980 Electrical installations in ships. Part 304:
Equipment - Semiconductor convertors
"Applies to static convertors using semiconductor rectifying
elements, such as diodes, reverse blocking triode thyristors,
etc. Applies to a.c./d.c., d.c./a.c., d.c./d.c. and a.c./a.c.
conversions. "
IEC 60119 Ed. 1.0 b:1960 Recommendations for polycrystalline
semiconductor rectifier stacks and equipment
"Applies to selenium and copper-oxide stacks, rectifiers and
rectifier equipment used for supplying d.c. power from a.c.
sources at frequencies up to 2 000 Hz. Does not apply to
telecommunication rectifiers other than those for power
supplies to such apparatus nor to rectifiers used as auxiliaries
of measuring instruments. Defines the characteristics of these
devices, lays down a marking system, preferred ratings, and
describes methods of test. "
IEC 60134 Ed. 1.0 b:1961 Rating systems for electronic tubes and valves
and analogous semiconductor devices
"Describes rating systems in use for electronic tubes and
analogous semiconductor devices. Its object is to bring about
a greater understanding of these systems, especially in the
division of responsibility between the manufacturer and the
circuit designer. "
IEC 60146-1-1 Amd.1 Ed. 3.0 b:1996 Amendment 1 - Semiconductor convertors General requirements and line commutated
convertors - Part 1-1: Specifications of basic
requirements
IEC 60146-1-1 Ed. 3.0 b:1991 Semiconductor convertors - General requirements
and line commutated convertors - Part 1-1:
Specifications of basic requirements
Part 1-1: Specifications of basic requirements Specifies the
requirements for the performance of all electronic power
convertors and electronic power switches using controllable
and/or non-controllable electronic valves. Specifies the
requirements applicable to line commutated convertors for
conversion of a.c. power to d.c. power or vice versa including
tests and service conditions which influence the basis of rating.
IEC 60146-1-3 Ed. 3.0 b:1991 Semiconductor convertors - General requirements
and line commutated convertors - Part 1-3:
Transformers and reactors
"Specifies characteristics wherein convertor transformers differ
from ordinary power transformers. In all other respects, the
rules specified in IEC 60076 shall apply. "
IEC 60146-2 Ed. 2.0 b:1999 Semiconductor converters - Part 2:
Self-commutated semiconductor converters
including direct d.c. converters
"Applies to all types of semiconductor inverters of the
self-commutated type and semiconductor convertors which
contain at least one part of a self-commutated type, including
direct a.c. convertors and d.c. convertors for all applications. "
IEC 60191-1 Ed. 1.0 b:1966 Mechanical standardization of semiconductor
devices. Part 1: Preparation of drawings of
semiconductor devices
"Gives recommended practice for the preparation of drawings
of semiconductor devices, drawings which indicate the space
which should be allowed for devices in equipment together
with other dimensional characteristics required to ensure
mechanical interchangeability. These drawings represent the
unification of the national standards and encourage the
manufacturers of devices to comply with the tolerances shown
in order to extend their range of customers internationally. "
IEC 60191-1 Ed. 1.0 b:1966 Mechanical standardization of semiconductor
devices. Part 1: Preparation of drawings of
semiconductor devices
"Gives recommended practice for the preparation of drawings
of semiconductor devices, drawings which indicate the space
which should be allowed for devices in equipment together
with other dimensional characteristics required to ensure
mechanical interchangeability. These drawings represent the
unification of the national standards and encourage the
manufacturers of devices to comply with the tolerances shown
in order to extend their range of customers internationally. "
IEC 60191-1A Ed. 1.0 b:1969 Mechanical standardization of semiconductor
devices - Part 1: Preparation of drawings of
semiconductor devices - First supplement
Deals with terminals on square or rectangular periphery and
lozenge-shaped bases.
IEC 60191-1B Ed. 1.0 b:1970 Mechanical standardization of semiconductor
devices - Part 1: Preparation of drawings of
semiconductor devices - Second supplement
Deals with general philosophy of flat-based devices.
IEC 60191-2 Amd.10 Ed. 1.0 b:2004 Amendment 10 - Mechanical standardization of
semiconductor devices - Part 2: Dimensions
IEC 60191-2 Amd.11 Ed. 1.0 b:2004 Amendment 11 - Mechanical standardization of
semiconductor devices - Part 2: Dimensions
IEC 60191-2 Amd.12 Ed. 1.0 b:2006 Amendment 12 - Mechanical standardization of
semiconductor devices - Part 2: Dimensions
IEC 60191-2 Amd.13 Ed. 1.0 b:2006 Amendment 13 - Mechanical standardization of
semiconductor devices - Part 2: Dimensions
IEC 60191-2 Amd.14 Ed. 1.0 b:2006 Amendment 14 - Mechanical standardization of
semiconductor devices - Part 2: Dimensions
IEC 60191-2 Amd.15 Ed. 1.0 b:2006 Amendment 15 - Mechanical standardization of
semiconductor devices - Part 2: Dimensions
IEC 60191-2 Amd.5 Ed. 1.0 b:2002 Amendment 5 - Mechanical standardization of
semiconductor devices. Part 2: Dimensions
IEC 60191-2 Amd.6 Ed. 1.0 b:2002 Amendment 6 - Mechanical standardization of
semiconductor devices. Part 2: Dimensions
IEC 60191-2 Amd.7 Ed. 1.0 b:2002 Amendment 7 - Mechanical standardization of
semiconductor devices. Part 2: Dimensions
IEC 60191-2 Amd.8 Ed. 1.0 b:2003 Amendment 8 - Mechanical standardization of
semiconductor devices. Part 2: Dimensions
IEC 60191-2 Amd.9 Ed. 1.0 b:2003 Amendment 9 - Mechanical standardization of
semiconductor devices - Part 2: Dimensions
IEC 60191-2 Ed. 1.0 b:1966 Mechanical standardization of semiconductor
devices. Part 2: Dimensions
"Consolidated reprint consisting of IEC 191-2 (1966) and
supplements 60191-2A (1967), 60191-2B (1969), 60191-2C
(1970), 60191-2D (1971), 60191-2E (1974), 60191-2F (1976),
60191-2G (1978), 60191-2H (1978), 60191-2J (1980),
60191-2K (1981), 60191-2L (1982), 60191-2M (1983),
60191-2N (1987), 60191-2P (1988), 60191-2Q (1990),
60191-2R (1995), 60191-2S (1995). The IEC standard
drawings given in this publication represent the unification of
national standards. This is a loose-leaf publication. "
IEC 60191-2X Ed. 1.0 b:1999 Mechanical standardization of semiconductor
devices - Part 2: Dimensions
IEC 60191-2Z Ed. 1.0 en:2000 Twenty-fourth supplement to Publication 60191-2
(1966) MECHANICAL STANDARDIZATION OF
SEMICONDUCTOR DEVICES - Part 2:
Dimensions
IEC 60191-3 Ed. 2.0 b:1999 Mechanical standardization of semiconductor
devices - Part 3: General rules for the preparation
of outline drawings of integrated circuits
Gives guidance on the preparation of drawings of integrated
circuits outlines.
IEC 60191-4 Amd.1 Ed. 2.0 b:2001 Amendment 1 - Mechanical standardization of
semiconductor devices - Part 4: Coding system
and classification into forms of package outlines
for semiconductor device packages
IEC 60191-4 Amd.2 Ed. 2.0 b:2002 Amendment 2 - Mechanical standardization of
semiconductor devices - Part 4: Coding system
and classification into forms of package outlines
for semiconductor device packages
IEC 60191-4 Ed. 2.2 b:2002 Mechanical standardization of semiconductor
devices - Part 4: Coding system and
classification into forms of package outlines for
semiconductor device packages
Describes a method for the designation and the classification
into forms of package outlines for semiconductor devices.
Provides a systematic method for generating universal
descriptive designators for semiconductor packages.
IEC 60191-5 Ed. 2.0 b:1997 Mechanical standardization of semiconductor
devices - Part 5: Recommendations applying to
integrated circuit packages using tape automated
bonding (TAB)
Gives recommendations applying to integrated circuits
supplied in packages using tape automated bonding (TAB) as
the principal component for structural and interconnection
functions. Covers the requirements for tape with bonded
integrated circuits (IC) as supplied by a manufacturer to a
user.
IEC 60191-6 Ed. 2.0 en:2004 Mechanical standardization of semiconductor
devices - Part 6: General rules for the preparation
of outline drawings of surface mounted
semiconductor device packages
Gives general rules for the preparation of outlines drawings of
surface-mounted semiconductor devices. It supplements IEC
60191-1 and 60191-3. It covers all surface-mounted discrete
semiconductors devices as well as integrated circuits classified
as form E.
IEC 60191-6-1 Ed. 1.0 en:2001 Mechanical standardization of semiconductor
devices - Part 6-1: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Design guide for
gull-wing lead terminals
"Covers the requirements for the design rule of terminal shape
plastic packages with gull-wing leads (e.g. QFP, SOP, SSOP,
TSOP, etc.)"
IEC 60191-6-10 Ed. 1.0 en:2003 Mechanical standardization of semiconductor
devices - Part 6-10: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Dimensions of
P-VSON
Provides the common outline drawings and dimensions for all
types of structures and composed materials of plastic very thin
small outline non-lead package (P-VSON).
IEC 60191-6-12 Ed. 1.0 en:2002 Mechanical standardization of semiconductor
devices - Part 6-12: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Design guide for
fine-pitch land grid array (FLGA) - Rectangular
type
"Provides common outline drawings and dimensions for all
types of structures and composed materials of fine-pitch land
grid array whose terminal pitch is less than, or equal to, 0,80
mm and whose package body outline is rectangular."
IEC 60191-6-2 Ed. 1.0 en:2001 "Mechanical standardization of semiconductor
devices - Part 6-2: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Design guide for
1,50 mm, 1,27 mm and 1,00 mm pitch ball and
column terminal packages"
Covers the requirements for the preparation of drawings of
integrated circuit outlines for the various ball and column
terminal packages.
IEC 60191-6-3 Ed. 1.0 en:2000 Mechanical standardization of semiconductor
devices - Part 6-3: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Measuring
methods for package dimensions of quad flat
packs (QFP)
Stipulates a method for quad flat packs measuring dimensions
which are classified into Form E.
IEC 60191-6-4 Ed. 1.0 en:2003 Mechanical standardization of semiconductor
devices - Part 6-4: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Measuring
methods for package dimensions of ball grid array
(BGA)
Covers the requirements for the measuring methods of ball
grid array (BGA) dimensions.
IEC 60191-6-5 Ed. 1.0 en:2001 Mechanical standardization of semiconductor
devices - Part 6-5: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Design guide for
fine-pitch ball grid array (FBGA)
"Provides common outline drawings and dimensions for all
types of structures and composed materials of fine-pitch ball
grid array the terminal pitch of which is less than or equal to
0,80 mm."
IEC 60191-6-6 Ed. 1.0 en:2001 Mechanical standardization of semiconductor
devices - Part 6-6: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Design guide for
fine pitch land grid array (FLGA)
"Provides common outline drawings and dimensions for all
types of structures and composed materials of fine-pitch land
grid whose terminal pitch is less than, or equal to, 0,80 mm
and whose package body outline is square."
IEC 60191-6-8 Ed. 1.0 en:2001 Mechanical standardization of semiconductor
devices - Part 6-8: General rules for the
preparation of outline drawings of surface mounted
semiconductor device packages - Design guide for
glass sealed ceramic quad flatpack (G-QFP)
Provides the common outline drawings and dimensions for all
types of structures and composed material of glass sealed
ceramic quad flatpack.
IEC 60747-1 Ed. 2.0 en:2006 Semiconductor devices - Part 1: General Gives the general requirements
applicable to the discrete
semiconductor devices and integrated circuits covered by the
other parts of IEC 60747 and IEC 60748.
IEC 60747-10 Amd.3 Ed. 2.0 b:1996 Amendment 3 - Semiconductor devices - Part 10:
Generic specification for discrete devices and
integrated circuits
IEC 60747-10 Ed. 2.0 b:1991 Semiconductor devices - Part 10: Generic
specification for discrete devices and integrated
circuits
"It is a generic specification for semiconductor devices,
discrete devices and integrated circuits, including multichip
integrated circuits, but excluding hybrid circuits. It defines
general procedures for quality assessment to be used in the
IECQ System and gives general rules for measuring methods
of electrical characteristics, climatic and mechanical tests, and
endurance tests. "
IEC 60747-11 Amd.1 Ed. 1.0 b:1991 Amendment 1 - Semiconductor devices. Discrete
devices. Part 11: Sectional specification for
discrete devices
IEC 60747-11 Amd.2 Ed. 1.0 b:1996 Amendment 2 - Semiconductor devices. Discrete
devices. Part 11: Sectional specification for
discrete devices
IEC 60747-11 Ed. 1.0 b:1985 Semiconductor devices. Discrete devices. Part 11:
Sectional specification for discrete devices
"Applies to discrete semiconductor devices, excluding
optoelectronic devices. Should be read together with the
generic specification to which it refers: it gives details of the
Quality Assessment Procedures, the inspection requirements,
screening sequences, sampling requirements, test and
measurement procedures required for the assessment of
semiconductor devices. "
IEC 60747-14-1 Ed. 1.0 en:2000 Semiconductor devices - Part 14-1:
Semiconductor sensors - General and
classification
"Describes general items concerning the specifications for
sensors which are basically made of semiconductor materials,
but also applicable to sensors using dielectric or ferroelectric
materials."
IEC 60747-14-1 Ed. 1.0 en:2000 Semiconductor devices - Part 14-1:
Semiconductor sensors - General and
classification
"Describes general items concerning the specifications for
sensors which are basically made of semiconductor materials,
but also applicable to sensors using dielectric or ferroelectric
materials."
IEC 60747-14-2 Ed. 1.0 en:2000 Semiconductor devices - Part 14-2:
Semiconductor sensors - Hall elements
Provides standards for packaged semiconductor Hall elements
which utilize the Hall effect.
IEC 60747-14-3 Ed. 1.0 en:2001 Semiconductor devices - Part 14-3:
Semiconductor sensors - Pressure sensors
"Specifies requirements for semiconductor pressure sensors
measuring absolute, gauge or differential pressures."
IEC 60747-16-1 Ed. 1.0 en:2001 Semiconductor devices - Part 16-1: Microwave
integrated circuits - Amplifiers
"Provides the terminology, the essential ratings and
characteristics, as well as the measuring methods, for
integrated circuit microwave power amplifiers."
IEC 60747-16-10 Ed. 1.0 en:2004 Semiconductor devices - Part 16-10: Technology
Approval Schedule (TAS) for monolithic
microwave integrated circuits
"Specifies the terms, definitions, symbols, quality system, test,
assessment and verification methods and other requirements
relevant to the design, manufacture and supply of monolithic
microwave integrated circuits in compliance with the general
requirements of the IECQ-CECC System for electronic
components of assessed quality."
IEC 60747-16-2 Ed. 1.0 en:2001 Semiconductor devices - Part 16-2: Microwave
integrated circuits - Frequency prescalers
"Provides terminology and letter symbols, essential ratings and
characteristics, as well as measuring methods for the
integrated circuit micowave frequency prescalers. "
IEC 60747-16-3 Ed. 1.0 en:2002 Semiconductor devices - Part 16-3: Microwave
integrated circuits - Frequency converters
"Provides new measuring methods, terminology and letter
symbols, as well as essential ratings and characteristics for
integrated circuit microwave frequency converters."
IEC 60747-16-4 Ed. 1.0 en:2004 Semiconductor devices - Part 16-4: Microwave
integrated circuits - Switches
"Provides new measuring methods, terminology and letter
symbols, as well as essential ratings and characteristics for
integrated circuit microwave switches. Switches in this
standard are based on SPDT (single pole double throw).
However, this standard is applicable to the other types of
switches."
IEC 60747-2 Ed. 2.0 b:2000 Semiconductor devices - Discrete devices and
integrated circuits - Part 2: Rectifier diodes
"Gives standards for rectifier diodes such as avalanche,
controlled avalanche or fast-switching rectifier diodes. "
IEC 60747-2-1 Ed. 1.0 b:1989 "Semiconductor devices - Discrete devices - Part
2: Rectifier diodes - Section One: Blank detail
specification for rectifier diodes (including
avalanche rectifier diodes), ambient and
case-rated, up to 100 A"
IEC 60747-2-2 Ed. 1.0 b:1993 "Semiconductor devices - Discrete devices - Part
2: Rectifier diodes - Section 2: Blank detail
specification for rectifier diodes (including
avalanche rectifier diodes), ambient and
case-rated, for currents greater than 100 A"
IEC 60747-3 Amd.1 Ed. 1.0 b:1991 Amendment 1 - Semiconductor devices - Discrete
devices - Part 3: Signal (including switching) and
regulator diodes
IEC 60747-3 Amd.2 Ed. 1.0 b:1993 Amendment 2 - Semiconductor devices - Discrete
devices - Part 3: Signal (including switching) and
regulator diodes
IEC 60747-3 Ed. 1.0 b:1985 Semiconductor devices - Discrete devices - Part 3:
Signal (including switching) and regulator diodes
"Gathers all information on signal (including switching) diodes,
voltage-reference, voltage-regulator diodes and
current-regulator diodes: i.e. terminology and letter symbols,
essential ratings and characteristics, measuring methods,
electrical endurance tests. It supplements basic information
given in IEC 60747-1. "
IEC 60747-3-1 Ed. 1.0 b:1986 "Semiconductor devices - Discrete devices - Part
3: Signal (including switching) and regulator
diodes - Section One: Blank detail specification for
signal diodes, switching diodes and
controlled-avalanche diodes"
"Covers the specific requirements for quality assessment of
signal diodes, switching diodes and controlled-avalanche
diodes. "
IEC 60747-3-2 Ed. 1.0 b:1986 "Semiconductor devices - Discrete devices - Part
3: Signal (including switching) and regulator
diodes - Section Two: Blank detail specification for
voltage-regulator diodes and voltage-reference
diodes,excluding temperature-compensated
precision reference diodes"
Covers the specific requirements for quality assessment of
voltage-regulator diodes and voltage-reference diodes.
IEC 60747-4 Amd.1 Ed. 1.0 b:1993 Amendment 1 - Semiconductor devices - Discrete
devices - Part 4: Microwave diodes and transistors
IEC 60747-4 Ed. 1.2 b:2001 Semiconductor devices - Discrete devices - Part 4:
Microwave devices
"Gives standards for the following categories of discrete
devices: variable capacitance diodes and snap-off diodes,
mixer diodes and detector diodes, avalanche diodes, gunn
diodes, bipolar transistor and field-effet transistors. "
IEC 60747-4-1 Ed. 1.0 en:2000 Semiconductor devices - Discrete devices - Part
4-1: Microwave diodes and transistors - Microwave
field effect transistors - Blank detail specification
IEC 60747-4-2 Ed. 1.0 en:2000 Semiconductor devices - Discrete devices - Part
4-2: Microwave diodes and transistors Integrated-circuit microwave amplifiers - Blank
detail specification
IEC 60747-5-1 Amd.1 Ed. 1.0 b:2001 Amendment 1 - Discrete semiconductor devices
and integrated circuits - Part 5-1: Optoelectronic
devices - General
IEC 60747-5-1 Amd.2 Ed. 1.0 b:2002 Amendment 2 - Discrete semiconductor devices
and integrated circuits - Part 5-1: Optoelectronic
devices - General
IEC 60747-5-1 Ed. 1.2 b:2002 Discrete semiconductor devices and integrated
circuits - Part 5-1: Optoelectronic devices General
Deals with the terminology relating to the semiconductor
optoelectronic devices.
IEC 60747-5-2 Amd.1 Ed. 1.0 b:2002 Amendment 1 - Discrete semiconductor devices
and integrated circuits - Part 5-2: Optoelectronic
devices - Essential ratings and characteristics
IEC 60747-5-2 Ed. 1.0 b:1997 Discrete semiconductor devices and integrated
circuits - Part 5-2: Optoelectronic devices Essential ratings and characteristics
"Gives the essential ratings and characteristics of the following
categories or subcategories of optoelectronic devices which
are not intended to be used in the field of fibre optic systems
or subsystems: Semiconductor photoemitters, semiconductor
photoelectric detectors, semiconductor photosensitive devices,
and semiconductor devices utilizing the optical radiation for
internal operation."
IEC 60747-5-3 Amd.1 Ed. 1.0 b:2002 Amendment 1 - Discrete semiconductor devices
and integrated circuits - Part 5-3: Optoelectronic
devices - Measuring methods
IEC 60747-5-3 Ed. 1.0 b:1997 Discrete semiconductor devices and integrated
circuits - Part 5-3: Optoelectronic devices Measuring methods
Describes the measuring methods applicable to the
optoelectronic devices which are not intended to be used in
the fibre optic systems or subsystems.
IEC 60747-5-4 Ed. 1.0 b:2006 Semiconductor devices - Discrete devices - Part
5-4: Optoelectronic devices - Semiconductor
lasers
"Deals with the terminology, the essential ratings and
characteristics as well as the measuring methods of
semiconductor lasers."
IEC 60747-6 Ed. 2.0 b:2000 Semiconductor devices - Part 6: Thyristors "Provides standards for the following
categories of discrete
semi-conductor devices: - (reverse-blocking) (triode) thyristors,
- asymmetrical (reverse-blocking) (triode) thyristors, reverse-conducting (triode) thyristors, - bidirectional triode
thyristors (triacs), - gate turn-off thyristors (GTO thyristors)."
IEC 60747-6-1 Ed. 1.0 b:1989 "Semiconductor devices - Discrete devices - Part
6: Thyristors - Section One: Blank detail
specification for reverse blocking triode thyristors,
ambient and case-rated, up to 100 A"
IEC 60747-6-2 Ed. 1.0 b:1991 "Semiconductor devices - Discrete devices - Part
6: Thyristors - Section Two: Blank detail
specification for bidirectional triode thyristors
(triacs), ambient or case-rated, up to 100 A"
IEC 60747-6-3 Ed. 1.0 b:1993 "Semiconductor devices - Discrete devices - Part
6: Thyristors - Section Three: Blank detail
specification for reverse blocking triode thyristors,
ambient and case-rated, for currents greater than
100 A"
IEC 60747-7 Ed. 2.0 b:2000 Semiconductor discrete devices and integrated
circuits - Part 7: Bipolar transistors
Gives the requirements applicable to the following
sub-categories of bipolar transistors: -low power signal
transistors (excluding switching applications); -power
transistors (excluding switching and high-frequency
applications); -high-frequency power transistors for amplifier
and oscillator applications; -switching transistors.
IEC 60747-7-1 Ed. 1.0 b:1989 Semiconductor devices - Discrete devices - Part 7:
Bipolar transistors - Section One: Blank detail
specification for ambient-rated bipolar transistors
for low and high-frequency amplification
IEC 60747-7-2 Ed. 1.0 b:1989 Semiconductor devices - Discrete devices - Part 7:
Bipolar transistors - Section Two: Blank detail
specification for case-rated bipolar transistors for
low-frequency amplification
IEC 60747-7-3 Ed. 1.0 b:1991 Semiconductor devices - Discrete devices - Part 7:
Bipolar transistors - Section three: Blank detail
specification for bipolar transistors for switching
applications
IEC 60747-7-4 Ed. 1.0 b:1991 Semiconductor devices - Discrete devices - Part 7:
Bipolar transistors - Section Four: Blank detail
specification for case-rated bipolar transistors for
high-frequency amplification
IEC 60747-7-5 Ed. 1.0 en:2005 Semiconductor devices - Discrete devices - Part
7-5: Bipolar transistors for power switching
applications
This part of IEC 60747 gives requirements for bipolar
switching transistors used for power switching application
above 1 A. NOTE: Requirements concerning
bipolar transistors in general can be found in IEC 60747-7.
IEC 60747-8-1 Ed. 1.0 b:1987 Semiconductor devices - Discrete devices - Part 8:
Field-effect transistors - Section One: Blank detail
specification for single-gate field-effect transistors
up to 5 W and 1 GHz
IEC 60747-8-2 Ed. 1.0 b:1993 Semiconductor devices - Discrete devices - Part 8:
Field-effect transistors - Section two: Blank detail
specification for field-effect transistors for
case-rated power amplifier applications
IEC 60747-8-3 Ed. 1.0 b:1995 Semiconductor devices - Discrete devices - Part 8:
Field-effect transistors - Section 3: Blank detail
specification for case-rated field effect transistors
for switching applications
IEC 60747-8-4 Ed. 1.0 b:2004 Discrete semiconductor devices - Part 8-4:
Metal-oxide-semiconductor field-effect transistors
(MOSFETs) for power switching applications
Gives details for the following categories of metal-oxide
semiconductor field-effect transistors (MOSFETs) with inverse
diodes: type B depletion (normally on) type and Type C
enhancement (normally off) type.
IEC 60747-9 Amd.1 Ed. 1.0 b:2001 Amendment 1 - Semiconductor devices - Part 9:
Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9 Ed. 1.1 b:2001 Semiconductor devices - Discrete devices - Part 9:
Insulated-gate bipolar transistors (IGBTs)
"Gives product specific standards for terminology, letter
symbols, essential ratings and characteristics and measuring
methods for insulated-gate bipolar transistors (IGBTs)."
IEC 60748-1 Ed. 2.0 b:2002 Semiconductor devices - Integrated circuits - Part
1: General
"Constitutes the general part of IEC 60748. Together with the
relevant material of IEC 60747-1, it gives general information
on integrated circuits. "
IEC 60748-11 Amd.1 Ed. 1.0 b:1995 Amendment 1 - Semiconductor devices Integrated circuits - Part 11: Sectional specification
for semiconductor integrated circuits excluding
hybrid circuits
IEC 60748-11 Amd.2 Ed. 1.0 b:1999 Amendment 2 - Semiconductor devices Integrated circuits - Part 11: Sectional specification
for semiconductor integrated circuits excluding
hybrid circuits
IEC 60748-11 Ed. 1.0 b:1990 Semiconductor devices - Integrated circuits - Part
11: Sectional specification for semiconductor
integrated circuits excluding hybrid circuits
"Applies to encapsulated semiconductor integrated circuits,
including multichip integrated circuits, but excluding hybrid
circuits. Gives details of the Quality Assessment Procedures,
the inspection requirements, screening sequences, sampling
requirements, test and measurement procedures required for
the assessment of semiconductor integrated circuits, including
digital, analogue and interface circuits. "
IEC 60748-11-1 Ed. 1.0 b:1992 Semiconductor devices - Integrated circuits - Part
11 - Section 1: Internal visual examination for
semiconductor integrated circuits excluding hybrid
circuits
IEC 60748-2 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part
2: Digital integrated circuits
This publication gives standards for the following categories or
sub-categories of devices: -Combinatorial and sequential
digital circuits; -Integrated circuit memories; -Integrated circuit
microprocessors; -Charge-transfer devices. Should be used
together with IEC 60747-1 and 60748-1.
IEC 60748-2-1 Ed. 1.0 b:1991 Semiconductor devices - Integrated circuits - Part
2: Digital integrated circuits - Section One: Blank
detail specification for bipolar monolithic digital
integrated circuit gates (excluding uncommitted
logic arrays)
IEC 60748-2-10 Ed. 1.0 b:1994 Semiconductor devices - Integrated circuits - Part
2: Digital integrated circuits - Section 10: Blank
detail specification for integrated circuit dynamic
read/write memories
IEC 60748-2-11 Ed. 1.0 b:1999 "Semiconductor devices - Integrated circuits - Part
2-11: Digital integrated circuits - Blank detail
specification for single supply integrated circuit,
electrically erasable, and programmable read-only
memory "
IEC 60748-2-12 Ed. 1.0 b:2001 Semiconductor devices - Integrated circuits part2-12: Digital integrated circuits - Blank detail
specification for programmable logic devices
(PLDs)
IEC 60748-2-2 Amd.1 Ed. 1.0 b:1994 "Amendment 1 - Semiconductor devices.
Integrated circuits - Part 2: Digital integrated
circuits - Section two: Family specification for
HCMOS digital integrated circuits, series 54/74
HC, 54/74 HCT, 54/74 HCU"
IEC 60748-2-2 Ed. 1.0 b:1992 "Semiconductor devices. Integrated circuits - Part
2: Digital integrated circuits - Section two: Family
specification for HCMOS digital integrated circuits,
series 54/74 HC, 54/74 HCT, 54/74 HCU"
IEC 60748-2-20 Ed. 1.0 b:2000 Semiconductor devices - Integrated circuits Part
2-20: Digital integrated circuits - Family
specification - Low voltage integrated circuits
"The dimensions of integrated circuit devices being continually
reduced, to obtain better performance and higher density, the
electric fields within the die will increase, which leads to
reduced reliability. This standard aims at giving interface
specifications for various sets of values, where each
comprises the nominal value of power supply voltage, its
tolerances, and the worst-case limit values of the input and
output voltages for low voltage integrated circuits."
IEC 60748-2-3 Ed. 1.0 b:1992 "Semiconductor devices - Integrated circuits - Part
2: Digital integrated circuits - Section three: Blank
detail specification for HCMOS digital integrated
circuits (series 54/74 HC, 54/74 HCT, 54/74 HCU)"
IEC 60748-2-4 Ed. 1.0 b:1992 "Semiconductor devices - Integrated circuits - Part
2: Digital integrated circuits - Section four: Family
specification for complementary MOS digital
integrated circuits, series 4000 B and 4000 UB"
IEC 60748-2-5 Ed. 1.0 b:1992 Semiconductor devices - Integrated circuits - Part
2: Digital integrated circuits - Section five: Blank
detail specification for complementary MOS digital
integrated circuits (series 4000 B and 4000 UB)
IEC 60748-2-6 Ed. 1.0 b:1991 Semiconductor devices. Integrated circuits - Part
2: Digital integrated circuits - Section Six: Blank
detail specification for microprocessor integrated
circuits
IEC 60748-2-7 Ed. 1.0 b:1992 Semiconductor devices. Integrated circuits - Part
2: Digital integrated circuits - Section seven: Blank
detail specification for integrated circuit fusible-link
programmable bipolar read-only memories
IEC 60748-2-8 Ed. 1.0 b:1993 Semiconductor devices - Integrated circuits - Part
2: Digital integrated circuits - Section Eight: Blank
detail specification for integrated circuit static
read/write memories
IEC 60748-2-9 Ed. 1.0 b:1994 Semiconductor devices - Integrated circuits - Part
2: Digital integrated circuits - Section 9: Blank
detail specification for MOS ultraviolet light
erasable electrically programmable read-only
memories
IEC 60748-20 Amd.1 Ed. 1.0 b:1995 Amendment 1 - Semiconductor devices.
Integrated circuits. Part 20: Generic specification
for film integrated circuits and hybrid film
integrated circuits
IEC 60748-20 Amd.1 Ed. 1.0 b:1995 Amendment 1 - Semiconductor devices.
Integrated circuits. Part 20: Generic specification
for film integrated circuits and hybrid film
integrated circuits
IEC 60748-20 Ed. 1.0 b:1988 Semiconductor devices. Integrated circuits. Part
20: Generic specification for film integrated circuits
and hybrid film integrated circuits
"Applies to film integrated circuits and to hybrid film integrated
circuits both passive and active. Applies also to
partly-completed F and HFICs supplied to customers for
subsequent processing as well as to chip carrier circuits
having more than one chip, provided that they have been
interconnected by film interconnection techniques. This
specification defines the quality assessment procedures and
the methods for electrical, climatic, mechanical and endurance
tests. It outlines the requirements which shall be applied to the
release of circuits using either qualification approval
procedures or capability approval procedures. "
IEC 60748-20-1 Ed. 1.0 b:1994 Semiconductor devices - Integrated circuits - Part
20: Generic specification for film integrated circuits
and hybrid film integrated circuits - Section 1:
Requirements for internal visual examination
"The purpose of these examinations is to check the internal
materials, construction and workmanship of film and hybrid
integrated circuits (F and HFICs). These examinations will
normally be used prior to tapping or encapsulation to detect
and eliminate the F and HFICs with internal defects that could
lead to device failure in normal application. Other acceptance
criteria may be agreed upon with the purchaser or supplier,
respectively. "
IEC 60748-21 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part
21: Sectional specification for film integrated
circuits and hybrid film integrated circuits on the
basis of qualification approval procedures
"Applies to film and hybrid film integrated circuits,
manufactured as catalogue or as custom-built products whose
quality is assessed on the basis of Qualification Approval.
Presents preferred values for rating and characteristics,
selects from the generic specification the appropriate tests and
measuring methods and gives general performance
requirements to be used in detail specifications for film and
hybrid film integrated circuits. "
IEC 60748-21-1 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part
21-1: Blank detail specification for film integrated
circuits and hybrid film integrated circuits on the
basis of qualification approval procedures
IEC 60748-22 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part
22: Sectional specification for film integrated
circuits and hybrid film integrated circuits on the
basis of the capability approval procedures
"Applies to film and hybrid film integrated circuits (F and HICs),
manufactured as catalogue or as custom-built circuits whose
quality is assessed on the basis of the capability approval
procedure. Presents preferred values for ratings and
characteristics, selects from the generic specification the
appropriate tests and measuring methods and gives general
performance requirements to be used in detail specifications
for film and hybrid film integrated circuits. "
IEC 60748-22-1 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part
22-1: Blank detail specification for film integrated
circuits and hybrid film integrated circuits on the
basis of the capability approval procedures
IEC 60748-23-1 Ed. 1.0 en:2002 Semiconductor devices - Integrated circuits - Part
23-1: Hybrid integrated circuits and film structures
- Manufacturing line certification - Generic
specification
Applies to high quality hybrid integrated circuits (with films)
incorporating special customer quality and reliability
requirements. Hybrid integrated circuits may be fully or partly
completed. Partly completed devices are those that may be
supplied to customers for further processing.
IEC 60748-23-2 Ed. 1.0 en:2002 Semiconductor devices - Integrated circuits - Part
23-2: Hybrid integrated circuits and film structures
- Manufacturing line certification - Internal visual
inspection and special tests
"Applies to high quality approval systems for hybrid integrated
circuits and film structures. The purpose of the tests is to
perform visual inspections on the internal materials,
construction and workmanship of hybrid, multichip and
multichip module microcircuits and passive elements used for
microelectronic applications including r.f./microwave. These
tests will normally be used on microelectronic devices prior to
capping or encapsulation to detect and eliminate devices with
internal non-conformances that could lead to device failure in
normal application. They may also be employed on a sampling
basis to determine the effectiveness of the manufacturers'
quality control and handling procedures."
IEC 60748-23-3 Ed. 1.0 en:2002 Semiconductor devices - Integrated circuits - Part
23-3: Hybrid integrated circuits and film structures
- Manufacturing line certification - Manufacturers'
self-audit checklist and report
Applies to a high quality approval system for hybrid integrated
circuits and film structures.This checklist is intended for the
use of a hybrid microcircuit manufacturer's internal
assessment team. It will provide the hybrid manufacturer and
the National Supervising Inspectorate with ongoing information
on process control demonstrating compliance with IEC
60748-23-1.
IEC 60748-23-4 Ed. 1.0 en:2002 Semiconductor devices - Integrated circuits - Part
23-4: Hybrid integrated circuits and film structures
- Manufacturing line certification - Blank detail
specification
Serves as a Blank Detail Specification for a high quality
approval system and contains requirements for style and
layout and minimum content of detail specifications. These
requirements are applicable when the detail specification is
published.
IEC 60748-23-5 Ed. 1.0 en:2003 "Semiconductor devices - Integrated circuits, Part
23-5: Hybrid integrated circuits and film structures
- Manufacturing line certification - Procedure for
qualification approval"
Applies to high quality hybrids (with films) incorporating special
customer quality and reliability requirements whose quality is
assessed on the basis of Qualification Approval. NOTE: Hybrid
integrated circuits may be fully or part completed.
IEC 60748-3 Amd.1 Ed. 1.0 b:1991 Amendment 1 - Semiconductor devices.
Integrated circuits. Part 3: Analogue integrated
circuits
IEC 60748-3 Amd.2 Ed. 1.0 b:1994 Amendment 2 - Semiconductor devices.
Integrated circuits. Part 3: Analogue integrated
circuits
IEC 60748-3 Ed. 1.0 b:1986 Semiconductor devices. Integrated circuits. Part 3:
Analogue integrated circuits
"Gives standards on the following sub-categories of analogue
integrated circuits: -operational amplifiers (having two inputs
and one output); -audio-amplifiers, video-amplifiers and
multichannel amplifiers for telecommunications; -R.F. and I.F.
amplifiers; -voltage and current regulators; -analogue signal
switching circuits. Should be used with IEC 60747-1 and
60748-1. "
IEC 60748-3-1 Ed. 1.0 b:1991 Semiconductor devices. Integrated circuits - Part
3: Analogue integrated circuits - Section one:
Blank detail specification for monolithic integrated
operational amplifiers
IEC 60748-4 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part
4: Interface integrated circuits
"Gives requirements for the following categories of interface
integrated circuits:line circuits (transmitters and receivers),
sense amplifiers, peripheral drivers (including memory drivers)
and level shifters, voltage comparators, linear and non-linear
analogue-to digital and digital-to-analogue converters, control
circuits for switch-mode power supplies, companding PCM
coder-decoders (CODEC), digital interface integrated circuits
(UBF), integrated service digital network (ISDN). "
IEC 60748-4-1 Ed. 1.0 b:1993 Semiconductor devices - Integrated circuits - Part
4: Interface integrated circuits - Section 1: Blank
detail specification for linear digital-to-analogue
converters (DAC)
IEC 60748-4-2 Ed. 1.0 b:1993 Semiconductor devices - Integrated circuits - Part
4: Interface integrated circuits - Section 2: Blank
detail specification for linear analogue-to-digital
converters (ADC)
IEC 60748-4-3 Ed. 1.0 en:2006 Semiconductor devices - Integrated circuits - Part
4-3: Interface integrated circuits - Dynamic criteria
for analogue-digital converters (ADC)
"Specifies a set of measuring methods and requirements for
testing ADCs under dynamic conditions, together with
associated terminology and characteristics"
IEC 60748-5 Ed. 1.0 b:1997 Semiconductor devices - Integrated circuits - Part
5: Semicustom integrated circuits
"Specifies standards on the subcategories of semicustom
integrated circuits. Provides basic information on terminology
and graphical symbols, essential ratings and characteristics,
functional specifications, measuring methods, acceptance and
reliability."
IEC 60749-1 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 1: General
Applicable to semiconductor devices (discrete devices and
integrated circuits) and establishes provisions common to all
the other parts of the series.
IEC 60749-10 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 10: Mechanical shock
"Describes a shock test intended to determine the suitability of
component parts for use in electronic equipment which may be
subjected to moderately severe shocks as a result of suddenly
applied forces or abrupt changes in motion produced by rough
handling, transportation, or field operation. Shock of this type
may disturb operating characteristics, particularly if the shock
pulses are repetitive. This is a destructive test. It is normally
applicable to cavity-type packages."
IEC 60749-11 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 11: Rapid change of
temperature - Two-fluid-bath method
"Defines the rapid change of temperature test method and the
two-fluid-bath method. This test method may also be used,
employing fewer cycles, to test the effect of immersion in
heated liquids that are used for the purpose of cleaning
devices. This test is applicable to all semiconductor devices. It
is considered destructive unless otherwise detailed in the
relevant specification."
IEC 60749-12 Ed. 1.0 b:2002 "Semiconductor devices - Mechanical and climatic
test methods - Part 12: Vibration, variable
frequency"
"Describes a test to determine the effect of variable frequency
vibration, within the specified frequency range, on internal
structural elements. This is a destructive test. It is normally
applicable to cavity-type packages."
IEC 60749-13 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 13: Salt atmosphere
Describes a salt atmosphere test that determines the
resistance of semiconductor devices to corrosion. It is an
accelerated test that simulates the effects of severe sea-coast
atmosphere on all exposed surfaces. It is only applicable to
those devices specified for a marine environment. The salt
atmosphere test is considered destructive.
IEC 60749-14 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic
test methods - Part 14: Robustness of
terminations (lead integrity)
Provides various tests for determining the integrity between
the lead/package interface and the lead itself when the lead(s)
are bent due to faulty board assembly followed by rework of
the part for re-assembly. Applicable to all through-hole devices
and surface-mount devices requiring lead forming by the user.
IEC 60749-15 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic
test methods - Part 15: Resistance to soldering
temperature for through-hole mounted devices
"Describes a test used to determine whether encapsulated
solid state devices used for through-hole mounting can
withstand the effects of the temperature to which they are
subjected during soldering of their leads, by using wave
soldering or a soldering iron."
IEC 60749-16 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic
test methods - Part 16: Particle impact noise
detection (PIND)
"Defines a test aiming at detecting the presence of loose
particles inside a cavity device such as, for example, chips of
ceramic, pieces of bonding wire or solder balls (prills)."
IEC 60749-17 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic
test methods - Part 17: Neutron irradiation
Used to determine the susceptibility of semiconductor devices
to degradation in the neutron environment. Applicable to
integrated circuits and discrete semiconductor devices.
IEC 60749-18 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 18: Ionizing radiation (total
dose)
Provides a test procedure for defining requirements for testing
packaged semiconductor integrated circuits and discrete
semiconductor devices for ionizing radiation (total dose)
effects from a cobalt-60 gamma ray source. Proposes an
accelerated annealing test for estimating low dose rate ionizing
radiation effects on devices. This annealing test is important
for low dose rate or certain other applications in which devices
may exhibit significant time-dependent effects. It is intended
for military- and space-related applications.
IEC 60749-19 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic
test methods - Part 19: Die shear strength
Determines the integrity of materials and procedures used to
attach semiconductor die to package headers or other
substrates. Generally only applicable to cavity packages or as
a process monitor.
IEC 60749-2 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 2: Low air pressure
Covers the testing of low air pressure on semiconductor
devices. The test is intended primarily to determine the ability
of component parts and materials to avoid voltage breakdown
failures due to the reduced dielectric strength of air and other
insulating materials at reduced pressures is only applicable to
devices where the operating voltage exceeds 1 000 V. This
test is applicable to all semiconductor devices provided they
are in cavity type packages. The test is intended for military
and space-related applications only.
IEC 60749-20 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 20: Resistance of
plastic-encapsulated SMDs to the combined effect
of moisture and soldering heat
Applies to semiconductor devices (discrete devices and
integrated circuits) - and provides a means of assessing the
resistance to soldering heat of plastic-encapsulated surface
mount devices.
IEC 60749-21 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic
test methods - Part 21: Solderability
"Establishes a standard procedure for determining the
solderability of device package terminations that are intended
to be joined to another surface using tin-lead or lead-free
solder for the attachment. Provides a procedure for 'dip and
look' solderability testing of through hole, axial and surface
mount devices as well as an optional procedure for a board
mounting solderability test for SMDs for the purpose of
allowing simulation of the soldering process to be used in the
device application."
IEC 60749-22 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 22: Bond strength
"Applicable to semiconductor devices (discrete devices and
integrated circuits), this test measures bond strength or
determine compliance with specified bond strength
requirements"
IEC 60749-23 Ed. 1.0 b:2004 Semiconductor devices - Mechanical and climatic
test methods - Part 23: High temperature
operating life
"This test is used to determine the effects of bias conditions
and temperature on solid state devices over time. It simulates
the device operating condition in an accelerated way, and is
primarily used for device qualification and reliability
monitoring."
IEC 60749-24 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic
test methods - Part 24: Accelerated moisture
resistance - Unbiased HAST
The unbiased highly accelerated stress test is performed for
the purpose of evaluating the reliability of non-hermetically
packaged solid-state devices in humid environments. It
employs temperature and humidity under non-condensing
conditions to accelerate the penetration of moisture through
the external protective material or along the interface between
the external protective material and the metallic conductors
which pass through it.
IEC 60749-25 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic
test methods - Part 25: Temperature cycling
"Provides a test procedure for determining the ability of
semiconductor devices and components and/or board
assemblies to withstand mechanical stresses induced by
alternating high and low temperature extremes. Permanent
changes in electrical and/or physical characteristics can result
from these mechanical stresses. Applies to single, dual and
triple chamber temperature cycling and covers component and
solder interconnection testing."
IEC 60749-26 Ed. 2.0 b:2006 Semiconductor devices - Mechanical and climatic
test methods - Part 26: Electrostatic discharge
(ESD) sensitivity testing - Human body model
(HBM)
"Establishes a standard procedure for testing and classifying
semiconductor devices according to their susceptibility to
damage or degradation by exposure to a defined human body
model (HBM) electrostatic discharge (ESD). The objective is to
provide reliable, repeatable HBM ESD test results so that
accurate classifications can be performed. This test method is
applicable to all semiconductor devices and is classified as
destructive."
IEC 60749-27 Ed. 2.0 b:2006 Semiconductor devices - Mechanical and climatic
test methods - Part 27: Electrostatic discharge
(ESD) sensitivity testing - Machine model (MM)
"Establishes a standard procedure for testing and classifying
semiconductor devices according to their susceptibility to
damage or degradation by exposure to a defined machine
model (MM) electrostatic discharge (ESD). It may be used as
an alternative test method to the human body model ESD test
method. The objective is to provide reliable, repeatable ESD
test results so that accurate classifications can be performed.
This test method is applicable to all semiconductor devices
and is classified as destructive"
IEC 60749-29 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic
test methods - Part 29: Latch-up test
"Covers the I-test and the overvoltage latch-up testing of
integrated circuits. The purpose of this test is to establish a
method for determining integrated circuit latch-up
characteristics and to define latch-up failure criteria. Latch-up
characteristics are used in determining product reliability and
minimizing ""No Trouble Found"" and ""Electrical Overstress""
failures due to latch-up."
IEC 60749-3 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 3: External visual inspection
"Aims at verifying that the materials, design, construction,
markings, and workmanship of a semiconductor device are in
accordance with the applicable procurement document.
External visual inspection is a non-destructive test and
applicable for all package types."
IEC 60749-30 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic
test methods - Part 30: Preconditioning of
non-hermetic surface mount devices prior to
reliability testing
Establishes a standard procedure for determining the
preconditioning of non-hermetic surface mount devices
(SMDs) prior to reliability testing. The test method defines the
preconditioning flow for non-hermetic solid-state SMDs
representative of a typical industry multiple solder reflow
operation. These SMDs should be subjected to the appropriate
preconditioning sequence described in this standard prior to
being submitted to specific in-house reliability testing in order
to evaluate long term reliability.
IEC 60749-31 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 31: Flammability of
plastic-encapsulated devices (internally induced)
"Applicable to semiconductor devices (discrete devices and
integrated circuits), this test determines whether the device
ignites due to internal heating caused by excessive overloads."
IEC 60749-32 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 32: Flammability of
plastic-encapsulated devices (externally induced)
"Applicable to semiconductor devices (discrete devices and
integrated circuits), this test determines whether the device
ignites due to external heating. The test uses a needle flame,
simulating the effect of small flames which may result from
fault conditions within equipment containing the device."
IEC 60749-33 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic
test methods - Part 33: Accelerated moisture
resistance - Unbiased autoclave
"The unbiased autoclave test is performed to evaluate the
moisture resistance integrity of non-hermetically packaged
solid-state devices using moisture condensing or moisture
saturated steam environments. It is a highly accelerated test
which employs conditions of pressure, humidity and
temperature under condensing conditions to accelerate
moisture penetration through the external protective material
or along the interface between the external protective material
and the metallic conductors passing through it. "
IEC 60749-34 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic
test methods - Part 34: Power cycling
Used to determine the resistance of a semiconductor device to
thermal and mechanical stresses due to cycling the power
dissipation of the internal semiconductor die and internal
connectors. This happens when low-voltage operating biases
for forward conduction (load currents) are periodically applied
and removed causing rapid changes of temperature. The
power cycling test is complementary to high temperature
operating life.
IEC 60749-35 Ed. 1.0 b:2006 Semiconductor devices - Mechanical and climatic
test methods - Part 35: Acoustic microscopy for
plastic encapsulated electronic components
"Defines the procedures for performing acoustic microscopy
on plastic encapsulated electronic components. Provides a
guide to the use of acoustic microscopy for detecting
anomalies (delamination, cracks, mould-compound voids, etc.)
reproducibly and non-destructively in plastic packages."
IEC 60749-36 Ed. 1.0 b:2003 "Semiconductor devices - Mechanical and climatic
test methods - Part 36: Acceleration, steady state"
Provides a test for determining the effects of constant
acceleration on cavity-type semiconductor devices. It is an
accelerated test designed to indicate types of structural and
mechanical weaknesses not necessarily detected in shock and
vibration test.
IEC 60749-39 Ed. 1.0 b:2006 Semiconductor devices - Mechanical and climatic
test methods - Part 39: Measurement of moisture
diffusivity and water solubility in organic materials
used for semiconductor components
Detailed the procedures for the measurement of the
characteristic properties of moisture diffusivity and water
solubility in organic materials used in the packaging of
semiconductor components. These two material properties
are important parameters for the effective reliability
performance of plastic packaged semiconductors after
exposure to moisture and being subjected to high-temperature
solder reflow.
IEC 60749-4 Ed. 1.0 b:2002 "Semiconductor devices - Mechanical and climatic
test methods - Part 4: Damp heat, steady state,
highly accelerated stress test (HAST)"
Provides a highly accelerated temperature and humidity stress
test (HAST) for the purpose of evaluating the reliability of
non-hermetic packaged semiconductor devices in humid
environments.
IEC 60749-5 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic
test methods - Part 5: Steady-state temperature
humidity bias life test
Provides a steady-state temperature and humidity bias life test
for the purpose of evaluating the reliability of non-hermetic
packaged solid-state devices in humid environments.
IEC 60749-6 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 6: Storage at high temperature
Aims at testing and determining the effect on all
semiconductor electronic devices of storage at elevated
temperature without electrical stress applied. This test is
considered non-destructive.
IEC 60749-7 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 7: Internal moisture content
measurement and the analysis of other residual
gases
Aims at testing and measuring the water vapour and other gas
content of the atmosphere inside a metal or ceramic
hermetically sealed device. Applicable to semiconductor
devices sealed in such a manner but generally only used for
high reliability applications such as military or aerospace.
IEC 60749-8 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 8: Sealing
"Applicable to semiconductor devices (discrete devices and
integrated circuits), it determines the leak rate of
semiconductor devices."
IEC 60749-9 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic
test methods - Part 9: Permanence of marking
Aims at testing and verifying that the markings on
semiconductor devices will not become illegible when subject
to solvents or cleaning solutions commonly used during the
removal of solder flux residue from the printed circuit board
assembly process. This test is applicable for all package
types. The test should be considered non-destructive.
IEC 62007-2 Amd.1 Ed. 1.0 b:1998 Amendment 1 - Semiconductor optoelectronic
devices for fibre optic system applications - Part 2:
Measuring methods
IEC 62007-2 Ed. 1.1 b:1999 Semiconductor optoelectronic devices for fibre
optic system applications - Part 2: Measuring
methods
Describes the measuring methods applicable to the
semiconductor devices to be used in the field of fibre optic
systems and subsystems.
IEC 62047-1 Ed. 1.0 b:2005 Semiconductor devices - Micro-electromechanical
devices - Part 1: Terms and definitions
This part of IEC 62047 defines terms for
micro-electromechanical devices including the process of
production of such devices.
IEC 62047-2 Ed. 1.0 b:2006 Semiconductor devices - Micro-electromechanical
devices - Part 2: Tensile testing method of thin film
materials
"Specifies the method for tensile testing of thin film materials
with length and width under 1 mm and thickness under 10 m,
which are main structural materials for
micro-electromechanical systems (MEMS), micromachines
and similar devices. The main structural materials for MEMS,
micromachines and similar devices have special features such
as typical dimensions in the order of a few microns, a material
fabrication by deposition, and a test piece fabrication by
non-mechanical machining using etching and
photolithography. This International Standard specifies the
testing method, which enables a guarantee of accuracy
corresponding to the special features. "
IEC 62047-3 Ed. 1.0 b:2006 Semiconductor devices - Micro-electromechanical
devices - Part 3: Thin film standard test piece for
tensile testing
"Specifies a standard test piece, which is used to guarantee
the propriety and accuracy of a tensile testing system for thin
film materials with length and width under 1 mm and thickness
under 10 m, which are main structural materials for
microelectromechanical systems (MEMS), micromachines and
similar devices. It is based on such a concept that a tensile
testing system can be guaranteed in propriety and accuracy,
when the measured tensile strengths of the standard test
pieces, whose tensile strength is pre-determined, are within
the designated range. It also specifies the test pieces to
minimize characteristics deviation among the pieces. "
IEC 60747-2 Ed. 2.0 b:2000 Semiconductor devices - Discrete devices and
integrated circuits - Part 2: Rectifier diodes
"Gives standards for rectifier diodes such as avalanche,
controlled avalanche or fast-switching rectifier diodes. "
IEC 61643-321 Ed. 1.0 b:2001 Components for low-voltage surge protective
devices - Part 321: Specifications for avalanche
breakdown diode (ABD)
"Is applicable to avalanche breakdown diodes (ABDs) which
represent one type of surge protective device component
(hereinafter referred to as SPDC) used in the design and
construction of surge protective devices connected to
low-voltage power distribution systems, transmission, and
signalling networks. Test specifications in this standard are for
single ABDs consisting of two terminals. However, multiple
ABDs may be assembled within a single package defined as a
diode array. Each diode within the array can be tested to this
specification. This standard contains a series of test criteria for
determining the electrical characteristics of the ABD. From the
standard test methods described herein, the performance
characteristics and ratings of the ABD can be verified or
established for specific packaged designs."
IEC 60700-1 Amd.1 Ed. 1.0 b:2003 Amendment 1 - Thyristor valves for high voltage
direct current (HVDC) power transmission - Part 1:
Electrical testing
IEC 60700-1 Ed. 1.1 b:2003 Thyristor valves for high voltage direct current
(HVDC) power transmission - Part 1: Electrical
testing
"Applies to thyristor valves with metal oxide surge arresters
directly connected between the valve terminals, for use in a
line commuted commutated converter for high voltage d.c.
power transmission or as part of a back-to-back link. Retricted
to electrical type and production tests. Tests are based on air
insulated valves. "
IEC 61643-341 Ed. 1.0 b:2001 Components for low-voltage surge protective
devices - Part 341: Specification for thyristor surge
suppressors (TSS)
" Is a test specification standard for thyristor surge suppressor
(TSS) components designed to limit overvoltages and divert
surge currents by clipping and crowbarring actions. Such
components are used in the construction of surge protective
devices, particularly as they apply to telecommunications. This
standard contains information on -terms, letter symbols, and
definitions -basic functions, configurations and component
structure -service conditions and fault modes -rating
verification and characteristic measurement."
IEC 61954 Amd.1 Ed. 1.0 b:2003 Amendment 1 - Power electronics for electrical
transmission and distribution systems - Testing of
thyristor valves for static VAR compensators
IEC 61954 Ed. 1.1 b:2003 Power electronics for electrical transmission and
distribution systems - Testing of thyristor valves
for static VAR compensators
"Defines type, production and optional test on thyristor valves
used in thyristor controlled reactots (TCR), Thyristor switched
reactor (TSR) and thyristor switched capacitors (TSC) forming
part of static VAR compensators (SVC) for power system
applications. the requirements of the standard apply both to
single valve units (one phase) and to multiple valve units
(several phases). Clauses 4 to 7 detail the type tests, clause 8
covers the production tests, clauses 9 and 7 detail optional
tests."
IEC 60050-561 Amd.1 Ed. 1.0 t:1995 Amendment 1 - International Electrotechnical
Vocabulary - Chapter 561: Piezoelectric devices
for frequency control and selection
IEC 60050-561 Amd.2 Ed. 1.0 t:1997 Amendment 2 - International Electrotechnical
Vocabulary - Chapter 561: Piezoelectric devices
for frequency control and selection
IEC 60050-561 Ed. 1.0 t:1991 International Electrotechnical Vocabulary Chapter 561: Piezoelectric devices for frequency
control and selection
IEC 61240 Ed. 1.0 b:1994 Piezoelectric devices - Preparation of outline
drawings of surface-mounted devices (SMD) for
frequency control and selection - General rules
Sets out general rules for drawing all dimensional anad
geometrical characteristics of a surface-mounted piezoelectric
device package in order to ensure mechanical
interchangeability of all outline drawings.
IEC 61837-1 Ed. 1.0 b:1999 Surface mounted piezoelectric devices for
frequency control and selection - Standard outlines
and terminal lead connections - Part 1: Plastic
moulded enclosure outlines
Deals with standard outlines and terminal lead connections as
they apply to surface mounted devices for frequency control
and selection in plastic moulded enclosures and is based on
IEC 61240.
IEC 61837-2 Ed. 1.0 b:2000 Surface mounted piezoelectric devices for
frequency control and selection - Standard outlines
and terminal lead connections - Part 2: Ceramic
enclosures
Deals with standard outlines and terminal lead connections as
they apply to surface mounted devices for frequency control
and selection in ceramic enclosures and is based on IEC
61240.
IEC 61837-3 Ed. 1.0 b:2000 Surface mounted piezoelectric devices for
frequency control and selection - Standard outlines
and terminal lead connections - Part 3: Metal
enclosures
Deals with standard outlines and terminal lead connections as
they apply to surface mounted devices for frequency control
and selection in metal enclosures and is based on IEC 61240.
IEC 61837-4 Ed. 1.0 en:2004 Surface mounted piezoelectric devices for
frequency control and selection - Standard outlines
and terminal lead connections - Part 4: Hybrid
enclosure outlines
Specifies the outline drawings for surface mounted
piezoelectric devices with hybrid enclosure outlines.
IEC/TS 61994-1 Ed. 1.0 b:2003 Piezoelectric and dielectric devices for frequency
control and selection - Glossary - Part 1:
Piezoelectric and dielectric resonators
"Specifies the terms and definitions for piezoelectric and
dielectric resonators representing the present state-of-the-art,
which are intended for use in the standards and documents of
IEC technical committee 49."
IEC/TS 61994-2 Ed. 1.0 b:2000 Piezoelectric and dielectric devices for frequency
control and selection - Glossary - Part 2:
Piezoelectric and dielectric filters
"Gives the terms and definitions for piezoelectric and dielectric
filters representing the present state of the art, which are
intended for use in the standards of IEC technical committee
49."
IEC/TS 61994-3 Ed. 1.0 en:2004 Piezoelectric and dielectric devices for frequency
control and selection - Glossary - Part 3:
Piezoelectric and dielectric oscillators
"Specifies the terms and definitions for piezoelectric and
dielectric oscillators representing the present state-of-the-art,
which are intended for use in the standards and documents of
IEC technical committee 49. "
IEC/TS 61994-4-1 Ed. 1.0 b:2001 Piezoelectric and dielectric devices for frequency
control and selection - Glossary - Part 4-1:
Piezoelectric materials - Synthetic quartz crystal
"Is a technical specification giving the terms and definitions for
synthetic quartz single crystals representing the present
state-of-the-art, which are intended for manufacturing
piezoelectric elements for frequency control and selection."
IEC/TS 61994-4-2 Ed. 1.0 b:2003 Piezoelectric and dielectric devices for frequency
control and selection - Glossary - Part 4-2:
Piezoelectric and dielectric materials Piezoelectric ceramics
"Specifies the terms and definitions for piezoelectric ceramics
representing the present state-of-the-art, which are intended
for use in the standards and documents of IEC technical
committee 49."
IEC/TS 61994-4-4 Ed. 1.0 en:2005 Piezoelectric and dielectric devices for frequency
control and selection - Glossary - Part 4-4:
Materials - Materials for Surface Acoustic Wave
(SAW) devices
"Specifies the terms and definitions for single crystal wafers
applied for surface acoustic wave (SAW) devices representing
the state of the art, which are intended for use in the standards
and documents of IEC technical committee 49."