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InGaAs Photodiode
SD012-121-011
Advanced Photonix, Inc.
Precision – Control – Results
WWW.ADVANCEDPHOTONIX.COM
DESCRIPTION
FEATURES
The SD012-121-011 is a high
h sensitivity, low capacitance and noise,
0.3mm diameter active area InGaAs photodiode
photodiode, sensitive to wavelengths
in visible extended (450-1700nm) spectral range and used for sensing
applications. The photodetector is assembled in a TO-46 package.
•
•
•
•
RELIABILITY
APPLICATIONS
This API high-reliability
reliability detector is in principle able to meet military test
requirements (Mil-STD-750, Mil-STD-883)
883) after p
proper screening and
group test.
Contact API for recommendations on specific test conditions and
procedures.
• Industrial Sensing
• Security and Defense
• Communication
MOISTURE SENSITIVITY LEVEL
ESD
This device is Class 1A (HBM).
API silicon light dependent resistors are classified as MSL level 1 per
J-STD-020
020 allowing for unlimited floor time at temperatures less than or
equal to 30°C and humidity less than or equal to 85%.
Ta = 23°C non condensing
ABSOLUTE MAXIMUM RATINGS
SYMBOL
Operating Temperature
Storage Temperature
Soldering Temperature *
Wavelength Range
Reverse Voltage
Low Noise
Low Dark Current and Capacitance
High Sensitivity
Light Detection (Visible, NIR, SWIR)
MIN
0
-25
25
450
-
MAX
+85
+85
+240
1700
20
UNITS
°C
°C
°C
nm
V
*) 1/16 inch from case for 3s max.
Information in this technical datasheet is believed to
be correct and reliable. However, no responsibility is
assumed for possible inaccuracies or omission.
Specifications are subject to change without notice.
REV 8-27-15
Page 1/2
© 2015 Advanced Photonix, Inc. All rights reserved.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987
987-0146
0146 • Fax (805) 484-9935
484
InGaAs Photodiode
SD012-121-011
Advanced Photonix, Inc.
Precision – Control – Results
WWW.ADVANCEDPHOTONIX.COM
Ta = 23°C unless noted otherwise
OPTO-ELECTRICAL PARAMETERS
PARAMETER
Breakdown Voltage
Responsivity
Responsivity
Responsivity
Shunt Resistance
Dark Current
Capacitance
Rise Time (50Ω load)
Noise Equivalent Power
TEST CONDITIONS
Ibias = 100 µA
λ= 600 nm
λ= 1200 nm
λ= 1550 nm
Vbias = 10 mV
Vbias = 1V
Vbias = 1V; f = 1 MHz
Vbias = 1V; λ= 826 nm
λ= 900 nm
MIN
TYP
MAX
10
0.3
0.7
0.9
5
-
0.35
0.85
1.00
30
2
6
5
1.0
20
20
-
UNITS
V
A/W
A/W
A/W
MΩ
nA
pF
ns
-13
0.5
10 W/Hz
TYPICAL PERFORMANCE
SPECTRAL RESPONSE
1.2
Responsivity, A/W
1
0.8
0.6
0.4
0.2
0
400
600
800
1000
1200
1400
1600
1800
Wavelenght, nm
Information in this technical datasheet is believed to
be correct and reliable. However, no responsibility is
assumed for possible inaccuracies or omission.
Specifications are subject to change without notice.
REV 8-27-15
Page 2/2
© 2015 Advanced Photonix, Inc. All rights reserved.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935