Download gANZ0033 C E2-band LNA MMIC 81-86(77-86) GHz

gANZ0033 C
E2-band LNA MMIC
81-86(77-86) GHz
Doc. Rev. A01-17

5 dB NF

Point-to-point communication

E2-band coverage

Instrumentation

24 dBm OIP3

Fiber over radio

23 dB gain

77 GHz radar
gANZ0033 is a Low Noise Amplifier (LNA)
in the E2 (81-86 GHz) frequency band
suitable for point-to-point communication.
The LNA features 5 dB Noise Figure and
very flat frequency response. Furthermore,
the LNA has high gain, high linearity and
low input/output return loss.
Figure 1. Block diagram of the LNA.
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2017 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
gANZ0033 C
E2-band LNA MMIC
81-86(77-86) GHz
Doc. Rev. A01-17
Table 1. Electrical performance TA=25°C
Parameter
Min
Frequency
Gain
NF
P1dB
PSAT
OIP3
PAE
Input return loss
Output return loss
Power consumption
81 (77)
21
9
12
19
Typ
23
5
10
13
20
Max
Unit
86
25
GHz
dB
dB
dBm
dBm
dBm
%
dB
dB
mW
11
14
21
10
15
142
The chip has been measured on-wafer using CW and 2-tone input test signals. The LNA uses
typical bias settings if not specified differently.
Table 2. Test conditions
Parameter
Setting
RF input power
RF input frequency
Frequency separation
Temperature
-25 dBm/tone
83.5 GHz
10 MHz
25°C
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2017 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
gANZ0033 C
E2-band LNA MMIC
81-86(77-86) GHz
0
-30
-5
-40
S12 [dB]
S11 [dB]
Doc. Rev. A01-17
-10
-15
-20
0
-60
20
40
60 80
Freq [GHz]
-70
0
100 120
30
40 60 80
Freq [GHz]
100 120
20
40 60 80
Freq [GHz]
100 120
-5
10
S22 [dB]
S21 [dB]
20
0
20
0
-10
-10
-15
-20
-30
0
-50
20
40
60 80
Freq [GHz]
-20
0
100 120
0
-30
-5
-40
S12 [dB]
S11 [dB]
Figure 2. Small signal response from 0-120 GHz at nominal bias. (Upper left): Input matching. (Upper right):
Reverse isolation. (Lower left): Small-signal gain. (Lower right): Output matching.
-10
-15
-20
77
-50
-60
81
86
Freq [GHz]
90
-70
77
81
86
Freq [GHz]
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2017 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
90
gANZ0033 C
E2-band LNA MMIC
81-86(77-86) GHz
30
0
25
-5
S22 [dB]
S21 [dB]
Doc. Rev. A01-17
20
15
10
77
-10
-15
81
86
Freq [GHz]
-20
77
90
81
86
Freq [GHz]
90
Figure 3. Small signal response within the E2-band at nominal bias. (Upper left): Input matching. (Upper right):
Reverse isolation. (Lower left): Small-signal gain. (Lower right): Output matching.
10
NF [dB]
8
6
4
2
0
70
75
80
85
Freq [GHz]
90
Figure 4. : NF vs freq.
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2017 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
gANZ0033 C
E2-band LNA MMIC
81-86(77-86) GHz
Doc. Rev. A01-17
Bias should first be applied to the gates (VG…) followed by the drains (VD…). The gate voltages
must be adjusted within the min/max range indicated in Table 3-5 to obtain the specified drain
currents. The drain currents are stated with no input signal.
Table 3. Electrical settings on connector P1
Connector P1
NC
VD2
VG2
GND
VD1
VG1
NC
Pad No.
1
2
3
4
5
6
7
Bias settings (V/mA)
I/O
Min
Typ
Max
1.9
-0.7
2.0 / 65
-0.5
2.1
-0.3
1.1
-0.7
1.2 / 10
-0.5
1.3
-0.3
NC
Input
Input
Ground
Input
Input
NC
Table 4. Electrical settings on connector P2
Connector P2
GND
RF_OUT
GND
Pad No.
1
2
3
Interface
Z0 = 50 Ohm, AC coupled
I/O
Ground
Output
Ground
Table 5. Electrical settings on connector P3
Connector P3
GND
RF_IN
GND
Pad No.
1
2
3
Interface
Z0 = 50 Ohm, AC coupled
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2017 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
I/O
Ground
Input
Ground
gANZ0033 C
E2-band LNA MMIC
81-86(77-86) GHz
Doc. Rev. A01-17
Table 6. Absolute maximum ratings
Gate-source voltage
Drain-source voltage
Gate-drain breakdown voltage
ID2
ID1
RF input power
Operating temperature
Storage temperature
-2 to +0.7 V
4.5 V
8V
120 mA
50 mA
+15 dBm
-40 to + 85°C
-65 to +150°C
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2017 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
gANZ0033 C
E2-band LNA MMIC
81-86(77-86) GHz
Doc. Rev. A01-17
Mechanical drawing with pad locations is also available in dxf-file format on the web. The
substrate thickness is 50 µm (GaAs).
Figure 5. Outline drawing of the MMIC. Dimensions are in um.
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2017 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/