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AB1520AD 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER FEATURES: PACKAGE - BARE DIE 15dB Gain Low Noise Amplifier Single Supply +5V @ 90mA 15dBm P1dB Output Power at 20GHz pHEMT Technology Input Return Loss<-12dB Output Return Loss<-10dB 100% RoHS Compliant VDD RF Input GENERAL DESCRIPTION: RF Output TYPICAL APPLICATIONS: The AB1520AD is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our 0.25μm process. The circuit is DC-blocked at both the RF input and the RF output. Test Instrumentation Electronic Warfare Broadband Communication Infrastructure Fibre Optics TYPICAL PERFORMANCE: PARAMETER Min. Specification Typ. Max Unit ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS NOTED) SMALL SIGNAL GAIN Condition TAMBIENT=25°C, Z0=50Ω PADS B AND C OPEN CIRCUIT 15 18 dB 2GHZ TO 20GHZ INPUT RETURN LOSS -12 -10 dB 2GHZ TO 20GHZ OUTPUT RETURN LOSS -12 -10 dB 2GHZ TO 20GHZ OUTPUT POWER AT P1dB COMPRESSION 12 15 17 dBm 2GHZ, 5V DRAIN BIAS 15 17 dBm 10GHZ, 5V DRAIN BIAS 12 15 dBm 20GHZ, 5V DRAIN BIAS DRAIN CURRENT 90 mA 5V DRAIN BIAS NOISE FIGURE 3.5 dB 2GHZ, 5V DRAIN BIAS 3 dB 10GHZ, 5V DRAIN BIAS 6.5 dB 20GHZ, 5V DRAIN BIAS POINT Note: THE DEVICE HAS A DEFAULT CURRENT, SET BY AN ON-CHIP RESISTOR. PADS B AND C CAN BE BONDED TO GROUND TO INCREASE THE DEVICE CURRENT BY REDUCING THE DEFAULT RESISTANCE. Page 1 of 4 Tel: +44 (0) 1325 301111 Compound Photonics www.compoundphotonics.com [email protected] Revision 1.0 AB1520AD 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER ABSOLUTE MAXIMUM RATING1: PARAMETER RATING UNIT MAXIMUM INPUT POWER (PIN) +20 dBm DRAIN VOLTAGE (VDD) +12 V OPERATING TEMPERATURE (TOPER) -55 TO 85 °C STORAGE TEMPERATURE (TSTOR) -55 TO 150 °C Caution! ESD sensitive device Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision) The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Compound Photonics for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Compound Photonics. Compound Photonics reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 0.050 0.134 0.185 0.269 2.966 3.066 PAD LAYOUT 1.500 1.443 1.369 PAD G F E Die Identifier 1.141 1.041 D 0.530 0.430 A 0.506 0.422 0.385 0.301 C B 0 REF 3.120 2.914 2.988 0 REF 0.054 0.154 Dimensions in mm. NAME DESCRIPTION A IN RF INPUT B R2 INTERNAL SOURCE BIAS RESISTOR C R1 INTERNAL SOURCE BIAS RESISTOR D OUT RF OUTPUT E GND GROUND F VD DRAIN VOLTAGE G VG OPTIONAL GATE VOLTAGE DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH (µm) MIN. BOND PAD OPENING (µmxµm) 3120 X 1500 100 122 72 X 62 Page 2 of 4 Tel: +44 (0) 1325 301111 Compound Photonics www.compoundphotonics.com [email protected] Revision 1.0 AB1520AD 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER BIASING CIRCUIT SCHEMATIC ASSEMBLY DIAGRAM It is recommended that the RF connections be made using bond wires with 25µm diameter and a maximum length of 300µm. Ground connections should be made according to the required bias conditions To Evaluation Board via an 0402 Surface Mounted capacitor (100nF) 100pF Chip Capacitor Ground connection Die Identifier User application 50 Ohms line User application 50 Ohms line BILL OF MATERIALS DIE THICKNESS (µm) MATERIAL ALL RF TRACKS SHOULD BE 50 CHARACTERISTIC MIN. BOND PADCHIP PITCH (µm) CAPACITOR , 100pF, CAPACITOR MIN. BONDCAPACITOR PAD OPENING , 100nF, 0402 (µmxµm) Page 3 of 4 Tel: +44 (0) 1325 301111 Compound Photonics www.compoundphotonics.com [email protected] Revision 1.0 AB1520AD 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. HANDLING PRECAUTIONS: To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL RATING: These devices should be treated as Class 0 (0V - 250V) using the human body model as defined in JEDEC Standard No. JS-001-2012 and subsequent revisions of this standard Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged part and therefore no MSL rating applies. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including S-parameters, noise parameters and device model are available on request. RELIABILITY: A MTTF of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. Page 4 of 4 Tel: +44 (0) 1325 301111 Compound Photonics www.compoundphotonics.com [email protected] Revision 1.0