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Transcript
34
GUIMARÃES et al.: SINGLE-ELECTRON WINNER-TAKE-ALL MACRO BLOCK
Single-electron winner-take-all macro block
for large-scale integrated neural networks
J. G. Guimarães, L. M. Nóbrega and J. C. da Costa
Department of Electrical Engineering, Universidade de Brasília, C.P. 4386, Brasília, DF, 70904-970, Brazil,
e-mail: [email protected]
Abstract—This paper presents a basic block for building
large scale single-electron (SET) winner-take-all (WTA)
neural networks. This macro block is completely composed of
SET circuits: a WTA network, transistors and a digital to
analog converter. A character recognition task is
implemented. Simulations are done using SIMON and
MATLAB. Robustness against background charges and
temperature effects are evaluated.
Index Terms—single-electron;
neural network.
block;
winner-take-all;
I. INTRODUCTION
Nanoscale sized devices may become an extremely
attractive option for the development of giga (GSI) and
even tera (TSI) scaled integrated circuits. Among these
devices, Single-Electron Tunneling (SET) devices present
attractive features like extremely low power consumption,
reduced dimensions, excellent current control and low
noise behaviour.
These features should allow the realization of chips
containing a number of devices orders of magnitude
greater than those indicated by the roadmap [1] but still
respecting the roadmap' area and power restrictions. As a
result a TSI processor should be a feasible challenge in the
future. Nanoscale devices, like SETs, may present
operating instabilities due to local range phenomena such
as background charges and cotunneling events, which may
degrade their electrical performance [2].
To overcome these limitations parallel distributed
processing (PDP) architectures should be considered [3].
Among PDP architectures, neural networks seem to be a
very attractive system [3], presenting robustness against
local fluctuation, high parallelism and redundancy [4].
More specifically, competitive nets, like winner-take-all
(WTA), provide easiness of operation due to their nonsupervised training [5]. In addition, WTA has a relatively
reduced number of control signals, self-organization, local
memory and low connectivity when adopting a lateral
inhibition configuration [5]. WTA nets are used for
decision making, pattern recognition, image feature
extraction, Hamming network, image processing, video
compression and other tasks [6].
Single-electron devices are quite sensitive to
environmental conditions (their behavior is strongly
dependent on node impedances and on temperature and
electromagnetic interference, as well as on offset charges
and cotunneling events). Several measures can be taken to
minimize or to overcome these nuisances [2] and they were
taken into account in this study. To our knowledge no
simulations of the overall behavior of circuits containing
different single-electron blocks connected together have
ever been presented. This type of study is essential to
evaluate the possibility of building complex single-electron
device networks.
In this work a basic block for building large scale SETWTA neural networks is proposed. Each macro block can
be simulated using the well-known SET simulator SIMON
[7]. Offset charges were taken into account in these
simulations. MATLAB is used to read the ouput of each
macro block, providing the output of the whole WTA
neural network. The implementation of a large-scale SETWTA network is discussed.
II. SINGLE-ELECTRON TUNNELING DEVICES
Single-electron tunneling devices are built using tunnel
junctions which are formed by two normal metal electrodes
sandwiching a thin insulator, as shown in Fig. 1.
A tunnel junction can be considered as a leaky capacitor
and can be modeled using a capacitance C and a tunnel
resistance R that depend on the size of the junction and the
barrier thickness. These devices are able to manipulate
individual electrons [2]. Charge transfers along these kinds
of circuits occur by tunneling events across the barriers.
So, charge transfers can only occur across a barrier in
multiples of e. As the energy in a capacitor with a charge q
is equal to q 2 2C , tunnel events across tunnel junctions
will change the electrostatic energy EC of the system as
shown in Eq. 1.
EC =
e2
2C
(1)
Fig.1 Tunnel junction
JOURNAL INTEGRATED CIRCUITS AND SYSTEMS, VOL 1, NO. 3, JULY 2006.
35
III. SINGLE-ELECTRON TRANSISTOR
This device has two tunnel junctions in series, as
illustrated in Fig. 2. If the junctions are considered as
capacitors, when V = 0 and Vg < e/2C the island (region
between two or more junctions) [2,8,9] is neutral and
q1 =q 2 = CV g 2 , where q1 and q 2 are the charges in the
first and second junction, respectively. If an electron
tunnels towards the island, its charge will be shared by the
capacitances of the two junctions and the gate capacitance
Cg .
Generally,
C g << C , then
q1 = (CV g − e) 2
q 2 = (CV g + e) 2 . As the energy supplied by the voltage
source during a tunnel event is eV g 2 , the variation in the
electrostatic energy ΔE of the circuit will be as shown in
Eq. 2.
ΔE =
e 2 eV
−
4C
2
If T << E C k B
Fig.2 Single-electron transistor
and
(2)
(i.e. no charge transfer through
thermionic emission may occur), a tunnel event will have a
significant probability of occurrence only if ΔE < 0 .
Consequently, the sign of ΔE will determine whether
there is a current or not. So, if V g < e 2C there will be no
current and the device is in the Coulomb blockade [2].
On the other way, if V = −e 2C g and V g ≈ 0 , C g will
be charged with e 2 , but the island will still be
discharged, which means that a charge −e 2 is being
divided by the junctions. If a tunnel event happens it will
just change the junctions' charges in −e 4 and e 4 ,
making no difference for the energy. Small values of V g
will make electrons pass through the barriers one after
another, producing a current. According to that, the gate
voltage V is able to regulate the current, making this
device work as a transistor [2].
IV. SINGLE-ELECTRON WTA NEURAL NETWORK
The SET-WTA circuit [10,11] was derived from a MOS
implementation [6]. A 2-neuron SET-WTA circuit is
shown in Fig. 3.
Each neuron has a primary current input unit I i which
brings the data information to the network, and secondary
voltage input units ( vi−1 (t ) and vi+1 (t ) ) which come from
the nearest neighbors, as illustrated in Fig. 3. These
secondary connections provide the stimulation or
inhibition features which are characteristic of WTA
networks. Neuron 1 receives as inputs the current I1 and
the output voltage v 2 (t ) from neuron 2. Its single output
voltage is v1 (t ) . The bias voltage Vbias has a fixed value
[11]. Resistor Rt and capacitor Ct are responsible for the
time constant of the circuit, determining the output
convergence time.
The SET-WTA circuit identifies the largest output
voltage from a set of N neurons, inhibiting the output
voltages of the remaining N − 1 units [5,6].
V. SINGLE-ELECTRON WTA MACRO BLOCK
The single-electron WTA macro block is presented in
Fig. 4. Each macro block has a SET-WTA network with
lateral inhibition [11], SET transistors and a SET digital to
analog converter [12].
Considering that the goal of this work is the simulation
of large-scale SET-WTA circuits, the idea of creating a
macro block comes from two basic issues.
The first one is the difficulty of editing large circuits on
SET simulators. Using the well-know SET simulator
SIMON [7], for example, takes a long time because of its
"pick and place" editing system. A circuit with 400 tunnel
junctions would take weeks to be totally edited with that
system. A netlist description of SET circuits can be made
in SIMON, but it is also time consuming, tedious and
prone to mistakes.
The second issue is the processing capability. For
example, a SET-WTA circuit with 100 neurons, which
means 400 tunnel junctions and 300 capacitors requires the
observation of all individual neuron outputs, i. e., 100
nodes. In a Pentium 4, 1.5 GHz, 528 MB RAM only 45
nodes can be observed with SIMON.
Taking these issues into consideration, a macro block
approach would be useful to overcome those limitations.
Fig.3 WTA network structure
36
GUIMARÃES et al.: SINGLE-ELECTRON WINNER-TAKE-ALL MACRO BLOCK
Fig. 4 SET-WTA macro block with 4 neurons
The whole network can be described by macros. Those
macros are small enough to be simulated by SIMON and a
transfer function will be determined for each one of them.
MATLAB is used to read all macros' outputs and to
determine the largest one.
Considering a SET-WTA with N neurons. This network
JOURNAL INTEGRATED CIRCUITS AND SYSTEMS, VOL 1, NO. 3, JULY 2006.
is broken into blocks of n neurons ( n < N ), in such a
way that N n macro blocks will be created. Each block
is simulated separately.
The SET-WTA network provides the winner output.
The SET transistors, connected to the output of each
neuron are used to normalize its value. From their
Coulomb blockade characteristics [2,9] it is possible to
have a positive value voltage in the winner output only.
This value will be taken as a logic 1 . All other outputs
will be taken as logic zeroes. The SET-DAC gives the
analog value of the winner neuron in each block. This
value is obtained converting the word defined by the
output voltage array into its analog equivalent. In all
blocks that do not have the winner the DAC will provide
a aproximately zero ouput voltage. Only the winner
block will provide a value different from zero. MATLAB
identifies the winner neuron reading all DAC's outputs.
For example, a SET-WTA network with N = 1000
neurons could be broken in blocks of n = 25 neurons,
creating 40 circuits for simulation. In the next section, a
simulation example will be presented.
VI. RECOGNITION TASK
In order to check if the proposed macro works as a
WTA network, a character recognition task was
simulated using it. The system developed in this work is
shown in Fig. 5. It is composed of two neural networks:
one pre-processing layer and one WTA layer, which was
divided into macro blocks.
For this task, sixteen exemplar characters
P1 , P2 , , P16 [5], shown in Fig. 6, were chosen.
Fig.5 Macro system for dot pattern recognition
37
Fig.6 Exemplar characters
Moreover, four disturbed characters X 1 , X 6 , X 11 , X 16
were created from exemplar patterns P1 , P6 , P11 , P16 ,
respectively. These characters were generated
introducing noise to 10% of the points of each exemplar
and are shown in Fig. 7 [11].
The exemplar characters will be stored in the preprocessing layer weights. These characters will make the
partition of the input space into classes [5], one for each
exemplar. This pre-processing layer calculates the
similarity from disturbed inputs X 1 , X 6 , X 11 , X 16 to
each of the stored exemplar characters [10,11]. The
simulation of this layer was implemented using
MATLAB. The following steps are taken to process the
storage. Firstly, all exemplars should be converted into a
representation suitable for neural networks [11].
Considering a bipolar representation, for each point
was assigned the value 1 if there was a dot in that
position and the value -1 if there was not a dot.
The outputs provided by the pre-processing layer are
adjusted in the range from −0.6nA to 4nA [13], since
the WTA inputs are currents.
Fig.7 Disturbed characters
38
GUIMARÃES et al.: SINGLE-ELECTRON WINNER-TAKE-ALL MACRO BLOCK
The WTA layer was designed using SET neurons
shown in Figs. 3 arranged in macro blocks as can bee
seen in Fig. 4. In order to check the operation of the
designed architecture, the WTA layer was simulated
with SIMON (Simulation of Nanostructures) [7], at
circuit level, using as primary inputs the output current
values resulting from the functional simulation of the
pre-processing layer [10,11].
Macro simulations were executed successfully with
SIMON for T = 1K and random offset charges (ROC) in
the range −10%e < ROC < 10%e . Fig. 8 shows the
analog output of each macro block, provided by the DAC
converter for each disturbed character.
MATLAB was used to read all DAC outputs and find
the the block with the winner neuron according to Table
1. That table shows the corresponding DAC output
voltages [12].
VII. CONCLUSIONS
The macro block made possible the simulation of
large-scale SET-WTA networks. In what concerns offset
charges, the proposed macro block worked properly
under significant ROC levels ( 10%e ). A character
recognition task was successfully simulated. This study
will be continued simulating more complex SET-WTA
macro blocks as well as by the evaluation of the
network's dynamic performance. Higher temperature
operation will be considered.
VIII. ACKNOWLEDGEMENTS
J. G. Guimarães is grateful to CAPES-Brazil for
support. L. M. Nóbrega is grateful to PIBIC-CNPq for
support. The authors gratefully acknowledge PADCTBrazil for support.
IX. REFERENCES
Table 1 DAC output voltages
b1
0
1
0
0
0
b2
0
0
1
0
0
b3
0
0
0
1
0
b4
0
0
0
0
1
DAC output
0 mV
0.6 mV
1.2 mV
2.4 mV
4.8 mV
[1]
[2]
[3]
[4]
According to Fig. 8, when X 1 was presented to the
system, macro block 1 provides an output of 0.6mV
which indicates, as can be seen in Table 1, that neuron 1
of this block is the winner one. In this way, X 1 was
[5]
[6]
recognized as P1 , as desired. When X 6 was presented,
macro block 2 provided an output of 1.2mV indicating
that neuron 2 of this macro is the winner. In Fig. 5 it can
be seen that the second neuron of macro block 2 is
neuron 6, showing that P6 was recognized. Also, X 11
[7]
and X 16 were properly recognized, as can be noted in
[9]
Fig. 8.
[8]
[10]
[11]
[12]
[13]
Fig.8 DAC outputs
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