Download FQP2N60C / FQPF2N60C

FQP2N60C / FQPF2N60C
N-Channel QFET® MOSFET
600 V, 2 A, 4.7 Ω
Description
Features
• 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,
ID = 1 A
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
D
G
D
S
G
G
D
S
TO-220
TO-220F
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP2N60C
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
FQPF2N60C
Unit
V
2.0
2.0 *
A
1.35
1.35 *
A
8*
A
600
- Pulsed
(Note 1)
8
± 30
V
(Note 2)
120
mJ
Avalanche Current
(Note 1)
2.0
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
5.4
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
(Note 3)
54
0.43
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
23
0.18
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθCS
Thermal Resistance, Case-to-Sink Typ, Max.
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
FQP2N60C
2.32
1
FQPF2N60C
5.5
Unit
°C/W
0.5
--
°C/W
62.5
62.5
°C/W
www.fairchildsemi.com
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
December 2013
Part Number
FQP2N60C
Top Mark
FQP2N60C
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
FQPF2N60C
FQPF2N60C
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted.
Parameter
Off Characteristics
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
Min.
Typ.
Max.
Unit
600
--
--
V
--
0.6
--
V/°C
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
rDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1 A
--
3.6
4.7
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 1 A
--
5.0
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
180
235
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
--
20
25
pF
--
4.3
5.6
pF
--
9
28
ns
--
25
60
ns
--
24
58
ns
--
28
66
ns
--
8.5
12
nC
--
1.3
--
nC
--
4.1
--
nC
A
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25 Ω
(Note 4)
VDS = 480 V, ID = 2 A,
VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2
ISM
--
--
8
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 2 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
230
--
ns
Qrr
Reverse Recovery Charge
--
1.0
--
µC
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 2 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
2
www.fairchildsemi.com
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
1
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
-1
10
o
150 C
o
-55 C
0
10
o
25 C
Notes :
1. 250us Pulse Test
o
2. TC = 25 C
Notes :
1. VDS = 40V
2. 250us Pulse Test
-2
10
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
IDR, Reverse Drain Current [A]
rDS(ON) [Ohm],
Drain-Source On-Resistance
12
VGS = 10V
8
6
4
VGS = 20V
2
o
Note : TJ = 25 C
0
0
10
o
150 C
2. 250us Pulse Test
-1
0
2
1
3
4
10
5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
500
12
Ciss = Cgs + Cgd (Cds = shorted)
450
Coss = Cds + Cgd
350
VGS, Gate-Source Voltage [V]
Crss = Cgd
400
Capacitances [pF]
Notes :
1. VGS = 0V
o
25 C
Ciss
300
Coss
250
200
Note ;
1. VGS = 0 V
150
2. f = 1 MHz
100
Crss
50
VDS = 120V
10
VDS = 300V
8
VDS = 480V
6
4
2
Note : ID = 2A
0
-1
10
0
10
0
1
10
0
2
4
6
8
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
3
10
www.fairchildsemi.com
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
!
(Continued)
3.0
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2.5
rDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2. ID = 250 uA
2.0
1.5
1.0
? Notes :
1. VGS = 10 V
0.5
2. ID = 1 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
o
TJ, Junction Temperature [ C]
50
100
Operation in This Area
is Limited by R DS(on)
1
100 µs
DC
1 ms
10 ms
100 ms
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
0
-1
10
Notes :
o
1. TC = 25 C
1 ms
0
10
DC
10 ms
100 ms
-1
10
Notes :
o
1. TC = 25 C
o
o
2. TJ = 150 C
2. TJ = 150 C
3. Single Pulse
3. Single Pulse
-2
-2
10
200
Figure 8. On-Resistance Variation
vs Temperature
10
10
150
o
Operation in This Area
is Limited by R DS(on)
1
0
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
-50
0
1
10
2
10
10
3
10
10
VDS, Drain-Source Voltage [V]
0
10
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP2N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF2N60C
2.4
ID, Drain Current [A]
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
4
www.fairchildsemi.com
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
Typical Characteristics
ZJC(t), Thermal Response [oC/W]
(Continued)
D = 0 .5
0
10
N o te s :
1 . Z θJC ( t) = 2 .3 2
0 .2
o
C /W M a x .
2 . D u ty F a c to r , D = t 1 / t 2
3 . T JM - T C = P D M * Z θJC ( t)
0 .1
PDM
0 .0 5
10
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
Typical Characteristics
-1
t1
0 .0 2
0 .0 1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
ZJC(t), Thermal Response [oC/W]
Figure 11-1. Transient Thermal Response Curve for FQP2N60C
D = 0 .5
10
0 .2
0
N o te s :
1 . Z θJC ( t) = 5 .5
0 .1
PDM
0 .0 2
0 .0 1
-1
C /W M a x .
3 . T JM - T C = P D M * Z θJC ( t)
0 .0 5
10
o
2 . D u t y F a c t o r , D = t 1 /t 2
t1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF2N60C
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
5
www.fairchildsemi.com
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
200nF
12V
VGS
Same Type
as DUT
50KΩ
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
Time
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
6
www.fairchildsemi.com
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
7
www.fairchildsemi.com
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
DUT
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
8
www.fairchildsemi.com
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
10
www.fairchildsemi.com
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
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