Download Problem For silicon at T=300K, given that the value of Nc =2.8x10

Problem
For silicon at T=300K, given that the value of Nc =2.8x1019 cm-3 and Nv=1.04x1019
cm-3, find:
a) The electron concentration for an n-type doped semiconductor if EF is
located at 146 meV below EC.
b) The hole concentration for a p-type doped semiconductor if EF is
located at 0.31eV above EV.
Solution
a) Givens: Nc =2.8x1019 cm-3 , Ec - EF= 0.146eV, k=8.6173324×10−5eV.K-1 and
T=300K
Substituting in the equation 𝑛 = 𝑁𝑐 𝑒
−(𝐸𝑐 −𝐸𝐹 )
𝐾𝑇
∴n = 9.87x1016cm–3
b) Givens: Nv=1.04x1019 cm-3, EF – Ev= 0.31eV, k=8.6173324×10−5eV.K-1 and
T=300K
Substituting in the equation 𝑝 = 𝑁𝑣 𝑒
∴p = 6.44x1013cm–3.
−(𝐸𝐹 −𝐸𝑣 )
𝐾𝑇