Download Datasheet - Mouser Electronics

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project

Document related concepts

Three-phase electric power wikipedia , lookup

Electrification wikipedia , lookup

Electrical substation wikipedia , lookup

Islanding wikipedia , lookup

Pulse-width modulation wikipedia , lookup

Electric power system wikipedia , lookup

Ohm's law wikipedia , lookup

Power inverter wikipedia , lookup

Rectifier wikipedia , lookup

Stray voltage wikipedia , lookup

History of electric power transmission wikipedia , lookup

Audio power wikipedia , lookup

Resistive opto-isolator wikipedia , lookup

Variable-frequency drive wikipedia , lookup

Surge protector wikipedia , lookup

Current source wikipedia , lookup

Power engineering wikipedia , lookup

Tektronix analog oscilloscopes wikipedia , lookup

Distribution management system wikipedia , lookup

Opto-isolator wikipedia , lookup

History of the transistor wikipedia , lookup

Voltage optimisation wikipedia , lookup

Buck converter wikipedia , lookup

Semiconductor device wikipedia , lookup

Thermal runaway wikipedia , lookup

Power electronics wikipedia , lookup

Metadyne wikipedia , lookup

Switched-mode power supply wikipedia , lookup

Mains electricity wikipedia , lookup

Alternating current wikipedia , lookup

Current mirror wikipedia , lookup

Transistor wikipedia , lookup

Transcript
TAN15
15 Watts, 40 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 960-1215 MHz. The device has gold thin-film
metallization and diffused ballasting for proven highest MTTF. The transistor
includes input prematch for broadband capability. Low thermal resistance
package reduces junction temperature, extends life.
CASE OUTLINE
55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
Maximum Voltage and Current
BVces
Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic2
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
175 Watts
50 Volts
4.0 Volts
2.0 Amps
- 65 to + 150 oC
+ 200 oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 40 Volts
PW = 20 µsec
DF = 5%
F = 1090 MHz
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 10 mA
Ic = 10 mA, Vce = 5 V
MIN
TYP
MAX
15
3.0
7.0
8.0
40
UNITS
Watts
Watts
dB
%
10:1
3.5
50
Volts
Volts
1.0
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue December 1995
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TAN15
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Microsemi:
TAN15