Download Lecture 12: Memory I - cs.Virginia

COMPUTER ARCHITECTURE
CS 6354
Main Memory
Samira Khan
University of Virginia
Mar 3, 2016
The content and concept of this course are adapted from CMU ECE 740
AGENDA
• Logistics
• Review from last lecture
• Main Memory
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ANONYMOUS FEEDBACK
• Course Pace
• Okay (11)
• Fast (1)
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Material
Right level (4)
Hard (6)
Too Easy (1)
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ANONYMOUS FEEDBACK
• Workload
• Okay (8)
• Heavy (3)
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Comments
Examples
Pictures
Text book/Reading material
Basics
Exam vs. Project
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MATERIAL
• Undergraduate Computer Architecture Course
– Includes more than what we are covering in this course
• Watch the lecture videos
• https://www.youtube.com/watch?v=BJ87rZCGWU0&li
st=PL5PHm2jkkXmidJOd59REog9jDnPDTG6IJ
• https://www.youtube.com/watch?v=zLP_X4wyHbY&li
st=PL5PHm2jkkXmi5CxxI7b3JCL1TWybTDtKq
• Readings
• http://www.ece.cmu.edu/~ece447/s15/doku.php?id=
readings
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TEXTBOOK
• Textbooks do not provide the high-level intuition
behind the ideas
• Many of the ideas are not yet in the text book
– Want to learn state of the art, and their tradeoffs
• Want to answer the question
–
–
–
–
Why?
What was done before?
Why this is better?
What are the downsides?
…. But do consult the textbook if you need ….
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EXAM VS. PROJECT VS. GRADE
• Focus on project
• Exams are just to make sure you understood the
material
• You want to learn the topics
• Grades do not get you a job, acquired skill does
• Your project shows
– You know the recent topics
– You know the tools
– You can implement and evaluate ideas
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REVIEW: USE OF ASYMMETRY
FOR ENERGY EFFICIENCY
• Kumar et al., “Single-ISA Heterogeneous Multi-Core Architectures:
The Potential for Processor Power Reduction,” MICRO 2003.
• Idea:
– Implement multiple types of cores on chip
– Monitor characteristics of the running thread (e.g., sample
energy/perf on each core periodically)
– Dynamically pick the core that provides the best
energy/performance tradeoff for a given phase
• “Best core”  Depends on optimization metric
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REVIEW: USE OF ASYMMETRY
FOR ENERGY EFFICIENCY
• Advantages
+ More flexibility in energy-performance tradeoff
+ Can execute computation to the core that is best suited for it (in terms of energy)
• Disadvantages/issues
- Incorrect predictions/sampling  wrong core  reduced performance or increased
energy
- Overhead of core switching
- Disadvantages of asymmetric CMP (e.g., design multiple cores)
- Need phase monitoring and matching algorithms
- What characteristics should be monitored?
- Once characteristics known, how do you pick the core?
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REVIEW: SLIPSTREAM PROCESSORS
• Goal: use multiple hardware contexts to speed up single
thread execution (implicitly parallelize the program)
• Idea: Divide program execution into two threads:
– Advanced thread executes a reduced instruction stream,
speculatively
– Redundant thread uses results, prefetches, predictions
generated by advanced thread and ensures correctness
• Benefit: Execution time of the overall program reduces
• Core idea is similar to many thread-level speculation
approaches, except with a reduced instruction stream
• Sundaramoorthy et al., “Slipstream Processors: Improving
both Performance and Fault Tolerance,” ASPLOS 2000.
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REVIEW: DUAL CORE EXECUTION
• Idea: One thread context speculatively runs ahead on
load misses and prefetches data for another thread
context
• Zhou, “Dual-Core Execution: Building a Highly Scalable
Single- Thread Instruction Window,” PACT 2005.
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DUAL CORE EXECUTION VS. SLIPSTREAM
• Dual-core execution does not
– remove dead instructions
– reuse instruction register results
– uses the “leading” hardware context solely for
prefetching and branch prediction
+ Easier to implement, smaller hardware cost and
complexity
- “Leading thread” cannot run ahead as much as in
slipstream when there are no cache misses
- Not reusing results in the “trailing thread” can
reduce overall performance benefit
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HETEROGENEITY (ASYMMETRY) 
SPECIALIZATION
• Heterogeneity and asymmetry have the same meaning
– Contrast with homogeneity and symmetry
• Heterogeneity is a very general system design concept (and
life concept, as well)
• Idea: Instead of having multiple instances of the same
“resource” to be the same (i.e., homogeneous or
symmetric), design some instances to be different (i.e.,
heterogeneous or asymmetric)
• Different instances can be optimized to be more efficient in
executing different types of workloads or satisfying different
requirements/goals
– Heterogeneity enables specialization/customization
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WHY ASYMMETRY IN DESIGN? (I)
• Different workloads executing in a system can have different behavior
– Different applications can have different behavior
– Different execution phases of an application can have different behavior
– The same application executing at different times can have different behavior
(due to input set changes and dynamic events)
– E.g., locality, predictability of branches, instruction-level parallelism, data
dependencies, serial fraction, bottlenecks in parallel portion, interference
characteristics, …
• Systems are designed to satisfy different metrics at the same time
– There is almost never a single goal in design, depending on design point
– E.g., Performance, energy efficiency, fairness, predictability, reliability,
availability, cost, memory capacity, latency, bandwidth, …
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WHY ASYMMETRY IN DESIGN? (II)
• Problem: Symmetric design is one-size-fits-all
• It tries to fit a single-size design to all workloads and
metrics
• It is very difficult to come up with a single design
– that satisfies all workloads even for a single metric
– that satisfies all design metrics at the same time
• This holds true for different system components, or
resources
– Cores, caches, memory, controllers, interconnect, disks,
servers, …
– Algorithms, policies, …
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FUTURE
MANAGE
DATA
FLOW
SPECIALIZED CORES
HYBRID, MEMORY WITH LOGIC
APPLICATION, PROCESSOR, MEMORY
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MAIN MEMORY BASICS
THE MAIN MEMORY SYSTEM
Processor
and caches
Main Memory
Storage (SSD/HDD)
• Main memory is a critical component of all computing
systems: server, mobile, embedded, desktop, sensor
• Main memory system must scale (in size, technology,
efficiency, cost, and management algorithms) to maintain
performance growth and technology scaling benefits
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MEMORY SYSTEM: A SHARED RESOURCE VIEW
Storage
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STATE OF THE
MAIN MEMORY SYSTEM
• Recent technology, architecture, and application trends
– lead to new requirements
– exacerbate old requirements
• DRAM and memory controllers, as we know them today, are
(will be) unlikely to satisfy all requirements
• Some emerging non-volatile memory technologies (e.g., PCM)
enable new opportunities: memory+storage merging
• We need to rethink the main memory system
– to fix DRAM issues and enable emerging technologies
– to satisfy all requirements
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MAJOR TRENDS
AFFECTING MAIN MEMORY (I)
• Need for main memory capacity, bandwidth, QoS increasing
• Main memory energy/power is a key system design concern
• DRAM technology scaling is ending
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MAJOR TRENDS
AFFECTING MAIN MEMORY (II)
• Need for main memory capacity, bandwidth, QoS increasing
– Multi-core: increasing number of cores
– Data-intensive applications: increasing demand/hunger for data
– Consolidation: cloud computing, GPUs, mobile
• Main memory energy/power is a key system design concern
• DRAM technology scaling is ending
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EXAMPLE TREND:
MANY CORES ON CHIP
• Simpler and lower power than a single large core
• Large scale parallelism on chip
AMD Barcelona
Intel Core i7
IBM Cell BE
IBM POWER7
8 cores
8+1 cores
8 cores
Nvidia Fermi
Intel SCC
Tilera TILE Gx
448 “cores”
48 cores, networked
100 cores, networked
4 cores
Sun Niagara II
8 cores
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CONSEQUENCE:
THE MEMORY CAPACITY GAP
Core count doubling ~ every 2 years
DRAM DIMM capacity doubling ~ every 3 years
•
•
Memory capacity per core expected to drop by 30% every two years
Trends worse for memory bandwidth per core!
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MAJOR TRENDS
AFFECTING MAIN MEMORY (III)
• Need for main memory capacity, bandwidth, QoS increasing
• Main memory energy/power is a key system design concern
– ~40-50% energy spent in off-chip memory hierarchy [Lefurgy, IEEE
Computer 2003]
– DRAM consumes power even when not used (periodic refresh)
• DRAM technology scaling is ending
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MAJOR TRENDS
AFFECTING MAIN MEMORY (IV)
• Need for main memory capacity, bandwidth, QoS increasing
• Main memory energy/power is a key system design concern
• DRAM technology scaling is ending
– ITRS projects DRAM will not scale easily below X nm
– Scaling has provided many benefits:
• higher capacity (density), lower cost, lower energy
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THE DRAM SCALING PROBLEM
• DRAM stores charge in a capacitor (charge-based memory)
– Capacitor must be large enough for reliable sensing
– Access transistor should be large enough for low leakage and high retention
time
– Scaling beyond 40-35nm (2013) is challenging [ITRS, 2009]
• DRAM capacity, cost, and energy/power hard to
scale
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SOLUTIONS TO THE
DRAM SCALING PROBLEM
• Two potential solutions
– Tolerate DRAM (by taking a fresh look at it)
– Enable emerging memory technologies to
eliminate/minimize DRAM
• Do both
– Hybrid memory systems
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SOLUTION 1: TOLERATE DRAM
• Overcome DRAM shortcomings with
– System-DRAM co-design
– Novel DRAM architectures, interface, functions
– Better waste management (efficient utilization)
• Key issues to tackle
– Reduce refresh energy
– Improve bandwidth and latency
– Reduce waste
– Enable reliability at low cost
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SOLUTION 2: EMERGING MEMORY
TECHNOLOGIES
• Some emerging resistive memory technologies seem
more scalable than DRAM (and they are nonvolatile)
• Example: Phase Change Memory
– Expected to scale to 9nm (2022 [ITRS])
– Expected to be denser than DRAM: can store multiple
bits/cell
• But, emerging technologies have shortcomings as
well
– Can they be enabled to replace/augment/surpass DRAM?
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HYBRID MEMORY SYSTEMS
CPU
DRAM
Fast, durable
Small,
leaky, volatile,
high-cost
DRA
MCtrl
PCM
Ctrl
Phase Change Memory (or Tech. X)
Large, non-volatile, low-cost
Slow, wears out, high active energy
Hardware/software manage data allocation and movement
to achieve the best of multiple technologies
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MAIN MEMORY IN THE SYSTEM
DRAM BANKS
L2 CACHE 3
L2 CACHE 2
SHARED L3 CACHE
DRAM MEMORY
CONTROLLER
DRAM INTERFACE
L2 CACHE 1
L2 CACHE 0
CORE 3
CORE 2
CORE 1
CORE 0
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IDEAL MEMORY
•
•
•
•
Zero access time (latency)
Infinite capacity
Zero cost
Infinite bandwidth (to support multiple accesses
in parallel)
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THE PROBLEM
• Ideal memory’s requirements oppose each other
• Bigger is slower
– Bigger  Takes longer to determine the location
• Faster is more expensive
– Memory technology: SRAM vs. DRAM
• Higher bandwidth is more expensive
– Need more banks, more ports, higher frequency, or
faster technology
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MEMORY TECHNOLOGY: DRAM
• Dynamic random access memory
• Capacitor charge state indicates stored value
• Capacitor leaks through the RC path
_bitline
– Whether the capacitor is charged or discharged
indicates storage of 1 or 0
– 1 capacitor
row enable
– 1 access transistor
– DRAM cell loses charge over time
– DRAM cell needs to be refreshed
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MEMORY TECHNOLOGY: SRAM
• Static random access memory
• Two cross coupled inverters store a single bit
– Feedback path enables the stored value to persist in
the “cell”
– 4 transistors for storage
– 2 transistors for access
_bitline
bitline
row select
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AN ASIDE: PHASE CHANGE MEMORY
•
Phase change material (chalcogenide glass) exists in two states:
–
–
Amorphous: Low optical reflexivity and high electrical resistivity
Crystalline: High optical reflexivity and low electrical resistivity
PCM is resistive memory: High resistance (0), Low resistance (1)
Lee, Ipek, Mutlu, Burger, “Architecting Phase Change Memory as a Scalable DRAM
Alternative,” ISCA 2009.
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MEMORY BANK:
A FUNDAMENTAL CONCEPT
• Interleaving (banking)
– Problem: a single monolithic memory array takes long to
access and does not enable multiple accesses in parallel
– Goal: Reduce the latency of memory array access and enable
multiple accesses in parallel
– Idea: Divide the array into multiple banks that can be
accessed independently (in the same cycle or in consecutive
cycles)
• Each bank is smaller than the entire memory storage
• Accesses to different banks can be overlapped
– An issue: How do you map data to different banks? (i.e., how
do you interleave data across banks?)
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MEMORY BANK ORGANIZATION
AND OPERATION
•
Read access sequence:
1. Decode row address &
drive word-lines
2. Selected bits drive bitlines
• Entire row read
3. Amplify row data
4. Decode column address
& select subset of row
• Send to output
5. Precharge bit-lines
• For next access
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WHY MEMORY HIERARCHY?
• We want both fast and large
• But we cannot achieve both with a single level of
memory
• Idea: Have multiple levels of storage
(progressively bigger and slower as the levels are
farther from the processor) and ensure most of
the data the processor needs is kept in the
fast(er) level(s)
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MEMORY HIERARCHY
• Fundamental tradeoff
– Fast memory: small
– Large memory: slow
• Idea: Memory hierarchy
Hard Disk
CPU
Cache
RF
• Latency, cost, size,
bandwidth
Main
Memory
(DRAM)
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CACHING BASICS:
EXPLOIT TEMPORAL LOCALITY
• Idea: Store recently accessed data in automatically
managed fast memory (called cache)
• Anticipation: the data will be accessed again soon
• Temporal locality principle
– Recently accessed data will be again accessed in the near
future
– This is what Maurice Wilkes had in mind:
• Wilkes, “Slave Memories and Dynamic Storage Allocation,” IEEE Trans.
On Electronic Computers, 1965.
• “The use is discussed of a fast core memory of, say 32000 words as a
slave to a slower core memory of, say, one million words in such a way
that in practical cases the effective access time is nearer that of the
fast memory than that of the slow memory.”
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CACHING BASICS:
EXPLOIT SPATIAL LOCALITY
• Idea: Store addresses adjacent to the recently accessed
one in automatically managed fast memory
– Logically divide memory into equal size blocks
– Fetch to cache the accessed block in its entirety
• Anticipation: nearby data will be accessed soon
• Spatial locality principle
– Nearby data in memory will be accessed in the near future
• E.g., sequential instruction access, array traversal
– This is what IBM 360/85 implemented
• 16 Kbyte cache with 64 byte blocks
• Liptay, “Structural aspects of the System/360 Model 85 II: the cache,”
IBM Systems Journal, 1968.
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A NOTE ON MANUAL VS. AUTOMATIC
MANAGEMENT
• Manual: Programmer manages data movement across
levels
-- too painful for programmers on substantial programs
– “core” vs “drum” memory in the 50’s
– still done in some embedded processors (on-chip scratch pad
SRAM in lieu of a cache)
• Automatic: Hardware manages data movement across
levels, transparently to the programmer
++ programmer’s life is easier
– simple heuristic: keep most recently used items in cache
– the average programmer doesn’t need to know about it
• You don’t need to know how big the cache is and how it works to write a
“correct” program! (What if you want a “fast” program?)
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AUTOMATIC MANAGEMENT
IN MEMORY HIERARCHY
• Wilkes, “Slave Memories and Dynamic Storage
Allocation,” IEEE Trans. On Electronic Computers, 1965.
• “By a slave memory I mean one which automatically
accumulates to itself words that come from a slower main
memory, and keeps them available for subsequent use
without it being necessary for the penalty of main
memory access to be incurred again.”
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A MODERN MEMORY HIERARCHY
Register File
32 words, sub-nsec
Memory
Abstraction
L1 cache
~32 KB, ~nsec
L2 cache
512 KB ~ 1MB, many nsec
L3 cache,
.....
Main memory (DRAM),
GB, ~100 nsec
Swap Disk
100 GB, ~10 msec
manual/compiler
register spilling
Automatic
HW cache
management
automatic
demand
paging
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THE DRAM SUBSYSTEM
DRAM SUBSYSTEM ORGANIZATION
•
•
•
•
•
•
Channel
DIMM
Rank
Chip
Bank
Row/Column
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PAGE MODE DRAM
• A DRAM bank is a 2D array of cells: rows x columns
• A “DRAM row” is also called a “DRAM page”
• “Sense amplifiers” also called “row buffer”
• Each address is a <row,column> pair
• Access to a “closed row”
– Activate command opens row (placed into row buffer)
– Read/write command reads/writes column in the row buffer
– Precharge command closes the row and prepares the bank for
next access
• Access to an “open row”
– No need for activate command
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DRAM BANK OPERATION
Rows
Row address 0
1
Columns
Row decoder
Access Address:
(Row 0, Column 0)
(Row 0, Column 1)
(Row 0, Column 85)
(Row 1, Column 0)
Row 01
Row
Empty
Column address 0
1
85
Row Buffer CONFLICT
HIT
!
Column mux
Data
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THE DRAM CHIP
• Consists of multiple banks (2-16 in Synchronous
DRAM)
• Banks share command/address/data buses
• The chip itself has a narrow interface (4-16 bits
per read)
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128M X 8-BIT DRAM CHIP
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COMPUTER ARCHITECTURE
CS 6354
Main Memory
Samira Khan
University of Virginia
Mar 3, 2016
The content and concept of this course are adapted from CMU ECE 740