Download PDF Data Sheet Rev. 0

FUNCTIONAL BLOCK DIAGRAM
5
4
7
6
VDD4A
3
VDD3A
VGG12A
2
VGG34A
Gain: 14 dB typical
Noise figure: 5 dB typical
Input return loss (S11): 15 dB typical
Output return loss (S22): 20 dB typical
Output power for 1 dB compression (P1dB): 14 dBm typical
Saturated output power (PSAT): 18 dBm typical
Output third-order intercept (IP3): 21 dBm typical
Supply voltage: 3 V at 120 mA
50 Ω matched input/output
Die size: 1.9 mm × 1.9 mm × 0.05 mm
VDD2A
FEATURES
VDD1A
RFOUT
8
ADL7003
APPLICATIONS
13
12
11
VDD4B
VDD3B
10
9
Figure 1.
GENERAL DESCRIPTION
The ADL7003 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic
microwave integrated circuit (MMIC), balanced low noise
amplifier that operates from 50 GHz to 95 GHz. In the lower
band of 50 GHz to 70 GHz, the ADL7003 provides 14 dB
(typical) of gain, 21 dBm output IP3, and 12 dBm of output
power for 1 dB gain compression. In the upper band of 70 GHz
Rev. 0
to 90 GHz, the ADL7003 provides 15 dB (typical) of gain,
21 dBm output IP3, and 14 dBm of output power for1 dB gain
compression. The ADL7003 requires 120 mA from a 3 V supply.
The ADL7003 amplifier inputs/outputs are internally matched
to 50 Ω, facilitating integration into multichip modules (MCMs).
All data is taken with the chip connected via one 0.076 mm (3 mil)
ribbon bond of 0.076 mm (3 mil) minimal length.
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2017 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
15691-001
14
VGG34B
RFIN
VGG12B
1
VDD1B
Test instrumentation
Military and space
Telecommunications infrastructure
VDD2B
Data Sheet
50 GHz to 95 GHz, GaAs, pHEMT, MMIC,
Wideband Low Noise Amplifier
ADL7003
ADL7003
Data Sheet
TABLE OF CONTENTS
Features........................................................................................... 1
Pin Configuration and Function Descriptions............................ 6
Applications ................................................................................... 1
Interface Schematic ................................................................... 7
Functional Block Diagram............................................................ 1
Typical Performance Characteristics............................................ 8
General Description ...................................................................... 1
Theory of Operation.................................................................... 13
Revision History ............................................................................ 2
Applications Information............................................................ 14
Specifications ................................................................................. 3
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ..................................................................................... 14
50 GHz to 70 GHz Frequency Range ....................................... 3
70 GHz to 90 GHz Frequency Range ....................................... 3
90 GHz to 95 GHz Frequency Range ....................................... 4
Absolute Maximum Ratings ......................................................... 5
Thermal Resistance ................................................................... 5
Typical Application Circuit..................................................... 16
Assembly Diagram................................................................... 17
Outline Dimensions .................................................................... 18
Ordering Guide........................................................................ 18
ESD Caution............................................................................... 5
REVISION HISTORY
4/2017—Revision 0: Initial Version
Rev. 0 | Page 2 of 18
Data Sheet
ADL7003
SPECIFICATIONS
50 GHz TO 70 GHz FREQUENCY RANGE
TDIE BOTTOM = 25°C; VDD = VDD1A = VDD2A = VDD3A = VDD4A = 3 V; IDQ = IDQ1A + IDQ2A + IDQ3A + IDQ4A = 120 mA, unless otherwise noted.
Adjust VGG = VGG12A = VGG34A from −1.5 V to 0 V to achieve the desired IDQ. Typical VGG = −0.5 V for IDQ = 120 mA.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
INPUT
Input Third-Order Intercept
SUPPLY
Current
Voltage
Symbol
Min
50
14
0.02
Unit
GHz
dB
dB/°C
5
dB
S11
S22
15
20
dB
dB
P1dB
PSAT
OIP3
12
16
21
dBm
dBm
dBm
IIP3
7
dBm
POUT/tone = 0 dBm with 1 MHz tone spacing
mA
V
Adjust VGG to achieve IDQ = 120 mA typical
IDQ
VDD
2
Typ
120
3
Max
70
180
4
Test Conditions/Comments
Output power (POUT)/tone = 0 dBm with 1 MHz
tone spacing
70 GHz TO 90 GHz FREQUENCY RANGE
TDIE BOTTOM = 25°C; VDD = VDD1A = VDD2A = VDD3A = VDD4A = 3 V; IDQ = IDQ1A + IDQ2A + IDQ3A + IDQ4A = 120 mA, unless otherwise noted.
Adjust VGG = VGG12A = VGG34A from −1.5 V to 0 V to achieve the desired IDQ. Typical VGG = −0.5 V for IDQ = 120 mA.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
INPUT
Input Third-Order Intercept
SUPPLY
Current
Voltage
Symbol
Min
70
13
Typ
15
0.02
5.5
Max
90
6.5
Unit
GHz
dB
dB/°C
dB
Test Conditions/Comments
S11
S22
15
15
dB
dB
P1dB
PSAT
OIP3
14
18
21
dBm
dBm
dBm
POUT/tone = 0 dBm with 1 MHz tone spacing
IIP3
6
dBm
POUT/tone = 0 dBm with 1 MHz tone spacing
mA
V
Adjust VGG to achieve IDQ = 120 mA typical
IDQ
VDD
2
120
3
180
4
Rev. 0 | Page 3 of 18
ADL7003
Data Sheet
90 GHz TO 95 GHz FREQUENCY RANGE
TDIE BOTTOM = 25°C; VDD = VDD1A = VDD2A = VDD3A = VDD4A = 3 V; IDQ = IDQ1A + IDQ2A + IDQ3A + IDQ4A = 120 mA, unless otherwise noted.
Adjust VGG = VGG12A = VGG34A from −1.5 V to 0 V to achieve the desired IDQ. Typical VGG = −0.5 V for IDQ = 120 mA.
Table 3.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation over Temperature
RETURN LOSS
Input
Output
SUPPLY
Current
Voltage
Symbol
Min
90
S11
S22
IDQ
VDD
2
Typ
11
0.02
Unit
GHz
dB
dB/°C
15
15
dB
dB
120
3
Max
95
180
4
Rev. 0 | Page 4 of 18
mA
V
Test Conditions/Comments
Adjust VGG to achieve IDQ = 120 mA typical
Data Sheet
ADL7003
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 4.
Parameter
Drain Bias Voltage (VDD)
Gate Bias Voltage (VGG )
Radio Frequency (RF) Input Power (RFIN)
Continuous Power Dissipation (PDISS),
at TDIE BOTTOM = 85°C (Derate 15.00 mW/°C
Above 85°C)
Rating
4.5 V
−2 V to 0 V dc
15 dBm
1.350 W
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Storage Temperature Range (Ambient)
Operating Temperature Range (Die Bottom)
ESD Sensitivity
Human Body Model (HBM)
Channel Temperature to Maintain
1 Million Hour MTTF
Nominal Channel Temperature at
TDIE BOTTOM = 85°C, VDD = 3 V
−65°C to +150°C
−55°C to +85°C
Class 1A 250 V
ESD CAUTION
Table 5. Thermal Resistance
Package Type
C-14-5
175°C
110°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. 0 | Page 5 of 18
θJC
66.70
Unit
°C/W
ADL7003
Data Sheet
3
4
5
6
VDD1A
VDD2A
VGG34A
VDD3A
7
VDD4A
2
VGG12A
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
RFOUT
8
ADL7003
TOP VIEW
(Not to Scale)
VDD2B
VGG34B
VDD3B
VDD4B
14
13
12
11
10
9
15691-002
VDD1B
RFIN
VGG12B
1
Figure 2. Pad Configuration
Table 6. Pad Function Descriptions
Pad No.
1
2
9, 10
Mnemonic
RFIN
VGG 12A
VDD1A,
VDD2A
VGG 34A
VDD3A,
VDD4A
RFOUT
VDD4B,
VDD3B
11
VGG 34B
12, 13
VDD2B,
VDD1B
14
VGG 12B
Die Bottom
GND
3, 4
5
6, 7
8
Description
RF Input. This pad is ac-coupled and matched to 50 Ω. See Figure 3 for the interface schematic.
Gate Control Pad for the First and Second Stage Amplifiers. See Figure 4 for the interface schematic.
Drain Bias Voltage Pads for the First and Second Stage Amplifiers. External bypass capacitors of 120 pF, 0.1 µF,
and 4.7 µF are required. Connect these pads to a 3 V supply. See Figure 5 for the interface schematic.
Gate Control Pad for the Third and Fourth Stage Amplifiers. See Figure 4 for the interface schematic.
Drain Bias Voltage Pads for the Third and Fourth Stage Amplifiers. External bypass capacitors of 120 pF, 0.1 µF,
and 4.7 µF are required. Connect these pads to a 3 V supply. See Figure 5 for the interface schematic.
RF Output. This pad is ac-coupled and matched to 50 Ω. See Figure 9 for the interface schematic.
Drain Bias Voltage Pads for the Fourth and Third Stage Alternative Bias Configuration. External bypass
capacitors of 120 pF, 0.1 µF, and 4.7 µF are required. See Figure 7 for the interface schematic.
Gate Control Pad for the Third and Fourth Stage Alternative Bias Configuration. Coupling capacitors are
required. See Figure 8 for the interface schematic.
Drain Bias Voltage Pads for the Second and First Stage Alternative Bias Configuration. External bypass
capacitors of 120 pF, 0.1 µF, and 4.7 µF are required. See Figure 7 for the interface schematic.
Gate Control Pad for the First and Second Stage Alternative Bias Configuration. Coupling capacitors are
required. See Figure 8 for the interface schematic.
Ground. Die bottom must be connected to RF/dc ground. See Figure 6 for the interface schematic.
Rev. 0 | Page 6 of 18
Data Sheet
ADL7003
15691-003
INTERFACE SCHEMATIC
VDD1B TO VDD4B
15691-007
RFIN
Figure 3. RFIN Interface Schematic
VGG12A,
VGG34A
15691-008
15691-004
Figure 7. VDD 1B to VDD 4B Interface Schematic
VGG12B,
VGG34B
Figure 4. VGG12A, VGG34A Interface Schematic
Figure 8. VGG12B, VGG34B Interface Schematic
RFOUT
GND
Figure 9. RFOUT Interface Schematic
15691-006
Figure 5. VDD 1A to VDD 4A Interface Schematic
15691-009
15691-005
VDD1A TO VDD4A
Figure 6. GND Interface Schematic
Rev. 0 | Page 7 of 18
ADL7003
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
20
20
15
18
10
16
S11
S21
S22
14
12
GAIN (dB)
–10
10
8
–15
6
–20
4
–25
2
–30
40
45
50
55
60
65
70
75
80
85
90
95
100
FREQUENCY (GHz)
2.0V
2.7V
3.0V
3.3V
4.0V
0
50
55
70
75
80
85
90
95
Figure 13. Gain vs. Frequency for Various VDD Values
0
20
+85°C
+25°C
–55°C
–2
18
–4
INPUT RETURN LOSS (dB)
16
14
12
10
8
6
4
60
–14
–16
–18
–20
65
70
75
80
85
90
95
FREQUENCY (GHz)
–26
50
Figure 11. Gain vs. Frequency for Various Temperatures
55
60
65
70
75
80
85
90
95
FREQUENCY (GHz)
15691-011
55
–12
–24
15691-013
0
50
–8
–10
–22
+85°C
+25°C
–55°C
2
–6
Figure 14. Input Return Loss vs. Frequency at Various Temperatures
20
0
100mA
120mA
140mA
160mA
180mA
–2
18
–4
INPUT RETURN LOSS (dB)
16
14
12
10
8
6
100mA
120mA
140mA
160mA
180mA
2
0
50
55
60
65
70
75
80
85
90
FREQUENCY (GHz)
–8
–10
–12
–14
–16
–18
–20
–22
–24
95
15691-020
4
–6
Figure 12. Gain vs. Frequency for Various I DQ Values
–26
50
55
60
65
70
75
80
85
90
95
FREQUENCY (GHz)
Figure 15. Input Return Loss vs. Frequency for Various I DQ Values
Rev. 0 | Page 8 of 18
15691-018
GAIN (dB)
65
FREQUENCY (GHz)
Figure 10. Broadband Gain and Return Loss vs. Frequency
GAIN (dB)
60
15691-027
0
–5
15691-010
RESPONSE (dB)
5
Data Sheet
ADL7003
0
0
2.0V
2.7V
3.0V
3.3V
4.0V
–6
–4
–8
–10
–12
–14
–16
–18
–20
–22
–8
–10
–12
–14
–16
–18
–20
–22
–24
–26
50
–26
50
55
60
65
70
75
80
85
90
95
15691-028
–24
FREQUENCY (GHz)
55
60
65
70
75
80
85
90
95
FREQUENCY (GHz)
Figure 16. Input Return Loss vs. Frequency for Various VDD Values
Figure 19. Output Return Loss vs. Frequency for Various VDD Values
0
10
+85°C
+25°C
–55°C
–2
–4
+85°C
+25°C
–55°C
9
8
–6
–8
NOISE FIGURE (dB)
OUTPUT RETURN LOSS (dB)
–6
15691-031
INPUT RETURN LOSS (dB)
–4
2.0V
2.7V
3.0V
3.3V
4.0V
–2
OUTPUT RETURN LOSS (dB)
–2
–10
–12
–14
–16
–18
–20
7
6
5
4
3
2
–22
55
60
65
70
75
80
85
90
95
FREQUENCY (GHz)
0
50
15691-014
70
75
80
90
7
6
–8
–10
–12
–14
–16
–18
5
4
3
2
–20
–22
100mA
120mA
140mA
160mA
180mA
1
55
60
65
70
75
80
FREQUENCY (GHz)
85
90
95
15691-021
–24
–26
50
85
8
100mA
120mA
140mA
160mA
180mA
NOISE FIGURE (dB)
OUTPUT RETURN LOSS (dB)
–6
65
Figure 20. Noise Figure vs. Frequency at Various Temperatures
0
–4
60
FREQUENCY (GHz)
Figure 17. Output Return Loss vs. Frequency for Various Temperatures
–2
55
Figure 18. Output Return Loss vs. Frequency for Various I DQ Values
0
50
55
60
65
70
75
80
85
90
FREQUENCY (GHz)
Figure 21. Noise Figure vs. Frequency for Various I DQ Values
Rev. 0 | Page 9 of 18
15691-022
–26
50
15691-012
1
–24
ADL7003
Data Sheet
10
20
2.0V
2.7V
3.0V
3.3V
4.0V
9
18
16
7
5
4
12
10
8
3
6
2
4
1
2
0
50
55
60
65
70
75
80
85
90
FREQUENCY (GHz)
0
50
60
65
70
75
80
85
90
Figure 25. P1dB vs. Frequency for Various VDD Values
20
20
+85°C
+25°C
–55°C
18
16
14
14
12
12
PSAT (dBm)
16
10
8
10
8
6
6
4
4
2
2
55
60
65
70
75
80
85
90
FREQUENCY (GHz)
0
50
15691-015
0
50
+85°C
+25°C
–55°C
55
60
65
70
75
80
85
90
FREQUENCY (GHz)
Figure 23. Output P1dB vs. Frequency at Various Temperatures
15691-016
18
Figure 26. P SAT vs. Frequency at Various Temperatures
20
18
18
16
16
14
14
PSAT (dBm)
20
12
10
8
12
10
8
6
6
100mA
120mA
140mA
160mA
180mA
2
0
50
55
60
100mA
120mA
140mA
160mA
180mA
4
2
65
70
75
80
85
FREQUENCY (GHz)
90
15691-025
4
Figure 24. P1dB vs. Frequency for Various I DQ Values
0
50
55
60
65
70
75
80
85
90
FREQUENCY (GHz)
Figure 27. P SAT vs. Frequency at Various I DQ Values
Rev. 0 | Page 10 of 18
95
15691-023
OUTPUT P1dB (dB)
55
FREQUENCY (GHz)
Figure 22. Noise Figure vs. Frequency for Various VDD Values
P1dB (dBm)
2.0V
2.7V
3.0V
3.3V
4.0V
15691-032
P1dB (dBm)
14
6
15691-029
NOISE FIGURE (dB)
8
Data Sheet
ADL7003
12
20
11
18
10
16
9
12
10
8
6
0
50
55
6
5
4
2.0V
2.7V
3.0V
3.3V
4.0V
2
1
60
65
70
75
80
85
90
FREQUENCY (GHz)
0
50
15691-030
2
7
3
2.0V
2.7V
3.0V
3.3V
4.0V
4
8
55
60
65
70
75
80
85
90
FREQUENCY (GHz)
Figure 28. P SAT vs. Frequency for Various VDD Values
15691-033
INPUT IP3 (dBm)
PSAT (dBm)
14
Figure 31. IIP3 vs. Frequency for Various VDD Values
26
12
11
24
10
22
8
OUTPUT IP3 (dB)
7
6
5
4
18
16
14
2
+85°C
+25°C
–55°C
0
50
55
60
65
70
75
80
85
90
FREQUENCY (GHz)
10
50
10
60
65
70
75
80
88
90
Figure 32. OIP3 vs. Frequency at Various Temperatures
26
100mA
120mA
140mA
160mA
180mA
11
55
FREQUENCY (GHz)
Figure 29. IIP3 vs. Frequency at Various Temperatures
12
+85°C
+25°C
–55°C
12
15691-019
1
15691-017
3
24
9
OUTPUT IP3 (dBm)
22
8
7
6
5
4
3
20
18
16
14
100mA
120mA
140mA
160mA
180mA
2
12
1
0
50
55
60
65
70
75
80
85
FREQUENCY (GHz)
90
15691-024
INPUT IP3 (dBm)
20
Figure 30. IIP3 vs. Frequency for Various I DQ Values
10
50
55
60
65
70
75
80
85
FREQUENCY (GHz)
Figure 33. OIP3 vs. Frequency for Various I DQ Values
Rev. 0 | Page 11 of 18
90
15691-026
INPUT IP3 (dB)
9
ADL7003
Data Sheet
26
300
280
DRAIN SUPPLY CURRENT (mA)
24
20
18
16
2.0V
2.7V
3.0V
3.3V
4.0V
12
55
60
65
70
75
80
85
90
200
180
70GHz
75GHz
80GHz
85GHz
160
140
100
–15
–12
–9
–6
–3
0
3
6
9
12
15
RF INPUT POWER (dBm)
Figure 34. OIP3 vs. Frequency for Various VDD Values
Figure 36. Drain Supply Current (I DD ) vs. RF Input Power
0.30
450
70GHz
75GHz
80GHz
85GHz
400
DRAIN SUPPLY CURRENT (mA)
0.25
0.20
0.15
0.10
0.05
0
–0.05
350
300
250
200
150
2.0V
2.7V
3.0V
3.3V
4.0V
100
50
–12
–9
–6
–3
0
3
6
9
12
RF INPUT POWER (dBm)
Figure 35. Gate Supply Current (I DD ) vs. RF Input Power
15
0
–2.0
15691-035
GATE SUPPLY CURRENT (mA)
220
120
FREQUENCY (GHz)
–0.10
–15
240
–1.8
–1.6
–1.4
–1.2
–1.0
–0.8
–0.6
GATE SUPPLY VOLTAGE (V)
–0.4
–0.2
0
15691-050
10
50
260
15691-036
14
15691-034
OUTPUT IP3 (dBm)
22
Figure 37. Drain Supply Current (I DQ) vs. Gate Supply Voltage (VGG)
Rev. 0 | Page 12 of 18
Data Sheet
THEORY OF OPERATION
ADL7003
The architecture of the ADL7003 low noise amplifier is shown
in Figure 38. The ADL7003 uses two cascaded four-stage
amplifiers operating in quadrature between two 90° hybrids.
This balanced amplifier approach forms an amplifier with a
combined gain of 14 dB and a saturated output power (PSAT) of
18 dBm. The 90° hybrids ensure that the input and output
return losses are greater than or equal to 15 dB. See the
application circuit shown in Figure 41 for further details on
biasing the various blocks.
RFOUT
15691-037
RFIN
Figure 38. ADL7003 Architecture
Rev. 0 | Page 13 of 18
ADL7003
Data Sheet
APPLICATIONS INFORMATION
The ADL7003 is a GaAs, pHEMT, MMIC power amplifier.
Capacitive bypassing is required for VDD1A through VDD4A and
VDD1B through VDD4B (see Figure 41). VGG12A is the gate bias
pad for the first two gain stages. VGG34A is the gate bias pad for
the second two gain stages. Apply a gate bias voltage to VGG12A
and VGG34A, and use capacitive bypassing as shown in Figure 41.
All measurements for this device were taken using the typical
application circuit (see Figure 41) and configured as shown in
the assembly diagram (Figure 42).
The following is the recommended bias sequence during
power-up:
Connect to ground.
Set the gate bias voltage to −1.5 V.
Set all the drain bias voltages, VDD = 3 V.
Increase the gate bias voltage to achieve a quiescent
current, IDD = 120 mA.
Apply the RF signal.
L9301
MATCHING STUB/BOND PAD
SHUNT CAPACITANCE = 15fF
RFIN
The following is the recommended bias sequence during
power-down:
1.
2.
3.
4.
50Ω
TRANSMISSION LINE
Turn off the RF signal.
Decrease the gate bias voltage to −1.5 V to achieve
IDD = 0 mA (approximately).
Decrease all of the drain bias voltages to 0 V.
Increase the gate bias voltage to 0 V.
PCB BOARD
3mil GAP
MMIC
Figure 39. High Frequency Input Wideband Matching
Table 7. Power Selection Table1
IDQ
(mA)2
100
120
140
160
180
1
2
Gain
(dB)
12
13
14
15
16
P1dB
(dBm)
10
12
13
14
15
OIP3
(dBm)
20
21
22
22.5
23
3mil GOLD
RIBBON
15691-051
5.
Place microstrip substrates as close to the die as possible to
minimize ribbon bond length. Typical die to substrate spacing
is 0.076 mm to 0.152 mm (3 mil to 6 mil). To ensure wideband
matching, a 15fF capacitive stub is recommended on the PCB
board before the ribbon bond.
PDISS
(mW)
300
360
420
480
540
VGG (V)
−0.52
−0.49
−0.44
−0.40
−0.36
L9301
MATCHING STUB/BOND PAD
SHUNT CAPACITANCE = 15fF
RFOUT
Data taken at nominal bias conditions; V DD = 3 V, TA = 25°C.
Adjust V GG12A and V GG24A from −1.5 V to 0 V to achieve the desired drain
current.
The VDD = 3 V and IDD = 120 mA bias conditions are recommended to optimize overall performance. Unless otherwise
noted, the data shown was taken using the recommended bias
condition. Operation of the ADL7003 at different bias conditions
may provide performance that differs from what is shown in
Figure 41. Biasing the ADL7003 for higher drain current typically
results in higher P1dB, output IP3, and gain but at the expense
of increased power consumption (see Table 7).
MOUNTING AND BONDING TECHNIQUES FOR
MILLIMETERWAVE GaAs MMICS
3mil GOLD
RIBBON
50Ω
TRANSMISSION LINE
PCB BOARD
3mil GAP
MMIC
15691-052
1.
2.
3.
4.
Microstrip, 50 Ω transmission lines on 0.127 mm (5 mil) thick
alumina, thin film substrates are recommended for bringing the
radio frequency to and from the chip. Raise the die 0.075 mm
(3 mil) to ensure that the surface of the die is coplanar with the
surface of the substrate.
Figure 40. High Frequency Output Wideband Matching
Place microstrip substrates as close to the die as possible to
minimize bond wire length. Typical die to substrate spacing is
0.076 mm to 0.152 mm (3 mil to 6 mil).
Attach the die directly to the ground plane with conductive
epoxy (see the Handling Precautions section, the Mounting
section, and the Wire Bonding section).
Rev. 0 | Page 14 of 18
Data Sheet
ADL7003
Handling Precautions
To avoid permanent damage, follow these storage, cleanliness,
static sensitivity, transient, and general handling precautions:
•
•
•
•
•
Place all bare die in either waffle or gel-based ESD
protective containers and then seal the die in an ESD
protective bag for shipment. After the sealed ESD
protective bag is opened, store all die in a dry nitrogen
environment.
Handle the chips in a clean environment. Do not attempt
to clean the chip using liquid cleaning systems.
Follow ESD precautions to protect against ESD strikes.
While bias is applied, suppress instrument and bias supply
transients. Use shielded signal and bias cables to minimize
inductive pickup.
Handle the chip along the edges with a vacuum collet or
with a sharp pair of bent tweezers. The surface of the chip
may have fragile air bridges and must not be touched with
vacuum collet, tweezers, or fingers.
Mounting
Before epoxy die is attached, apply a minimum amount of
epoxy to the mounting surface so that a thin epoxy fillet is
observed around the perimeter of the chip after it is placed into
position. Cure the epoxy per the schedule of the manufacturer.
Wire Bonding
RF bonds made with 0.003 in. × 0.0005 in. gold ribbon are
recommended for the RF ports. These bonds must be thermosonically bonded with a force of 40 g to 60 g. DC bonds of
0.001 in. (0.025 mm) diameter, thermosonically bonded, are
recommended. Create ball bonds with a force of 40 g to 50 g
and wedge bonds with a force of 18 g to 22 g. Create all bonds
with a nominal stage temperature of 150°C. Apply a minimum
amount of ultrasonic energy to achieve reliable bonds. Keep all
bonds as short as possible, less than 12 mil (0.31 mm).
Alternatively, short (≤3 mil) RF bonds made with two 1-mil
wires can be used.
Rev. 0 | Page 15 of 18
Data Sheet
ADL7003
TYPICAL APPLICATION CIRCUIT
The drain and gate voltages can be applied to either the north or the south side of the circuit.
VDD1A TO VDD4A
VGG12A TO VGG34A
4.7µF
4.7µF
0.1µF
0.1µF
120pF
120pF
2
120pF
120pF
4
3
5
VDD2A
120pF
6
120pF
7
VGG34A
VDD4A
VDD1A
VGG12A
VDD3A
8
RFOUT
ADL7003
RFIN
1
RFIN
RFOUT
VDD4B
VDD3B
VGG12B
VDD1B
VGG34B
VDD2B
14
13
120pF
120pF
0.1µF
0.1µF
4.7µF
4.7µF
12
11
120pF
10
120pF
9
120pF
120pF
NC
NO DC BIAS APPLIED
Figure 41. Typical Application Circuit
Rev. 0 | Page 16 of 18
15691-053
NC
Data Sheet
ADL7003
15691-055
ASSEMBLY DIAGRAM
Figure 42. Assembly Diagram
Rev. 0 | Page 17 of 18
ADL7003
Data Sheet
OUTLINE DIMENSIONS
1.90 SQ
0.201
0.05
0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150
0.088
0.117
2
3
4
5
6
7
0.076 × 0.076
*AIRBRIDGE
AREA
(Pads 2-7, 9-14)
0.125
8
0.125
0.086 × 0.051
(Pads 1 & 8)
0.125
0.081 × 0.097
1
0.125
1.016
0.637
13
12
11
10
9
SIDE VIEW
0.088
0.208
0.207
*This die utilizes fragile air bridges. Any pickup tools used must not contact this area.
04-26-2017-A
14
Figure 43. 14-Pad Bare Die [CHIP]
(C-14-5)
Dimensions shown in millimeter
ORDERING GUIDE
Model
ADL7003CHIPS
ADL7003CHIPS-SX
Temperature Range
−55°C to +85°C
−55°C to +85°C
Package Description
14-Pad Bare Die [CHIP]
14-Pad Bare Die [CHIP]
©2017 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D15691-0-4/17(0)
Rev. 0 | Page 18 of 18
Package Option
C-14-5
C-14-5